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1. 发明授权

US08487306B2 Photoelectric conversion element, display device, electronic device, and method for manufacturing photoelectric conversion element 有权
标题翻译：光电转换元件，显示装置，电子装置以及光电转换元件的制造方法
公开(公告)号：US08487306B2
公开(公告)日：2013-07-16
申请号：US13163166
申请日：2011-06-17
申请人： Koji Dairiki , Hidekazu Miyairi , Tsudoi Nagi
发明人： Koji Dairiki , Hidekazu Miyairi , Tsudoi Nagi
IPC分类号： H01L31/068
CPC分类号： H01L27/1214 , H01L29/04 , H01L29/78648 , H01L29/78696
摘要： A photoelectric conversion element includes a first conductive layer over a substrate; a first insulating layer covering the first conductive layer; a first semiconductor layer over the first insulating layer; a second conductive layer formed over the first semiconductor layer; an impurity semiconductor layer over the second semiconductor layer; a second conductive layer over the impurity semiconductor layer; a second insulating layer covering the first semiconductor layer and the second conductive layer; and a light-transmitting third conductive layer over the second insulating layer. A first opening and a second opening are formed in the second insulating layer. In the first opening, the first semiconductor layer is connected to the third conductive layer. In the second opening, the first conductive layer is connected to the third conductive layer. In the first opening, a light-receiving portion surrounded by an electrode formed of the second conductive layer is provided.
摘要翻译：光电转换元件包括在衬底上的第一导电层; 覆盖所述第一导电层的第一绝缘层; 在所述第一绝缘层上的第一半导体层; 形成在所述第一半导体层上的第二导电层; 在所述第二半导体层上方的杂质半导体层; 杂质半导体层上的第二导电层; 覆盖所述第一半导体层和所述第二导电层的第二绝缘层; 以及在所述第二绝缘层上方的透光第三导电层。在第二绝缘层中形成第一开口和第二开口。在第一开口中，第一半导体层连接到第三导电层。在第二开口中，第一导电层连接到第三导电层。在第一开口中，设置由由第二导电层形成的电极包围的光接收部分。

2. 发明授权

US08519397B2 Photoelectric conversion element, photoelectric conversion circuit, and display device 有权
标题翻译：光电转换元件，光电转换电路和显示装置
公开(公告)号：US08519397B2
公开(公告)日：2013-08-27
申请号：US13311665
申请日：2011-12-06
申请人： Tsudoi Nagi , Koji Dairiki
发明人： Tsudoi Nagi , Koji Dairiki
IPC分类号： H01L31/113
CPC分类号： H01L31/02327 , H01L27/12 , H01L27/1214 , H01L29/66757 , H01L31/102 , H01L31/20
摘要： A photoelectric conversion element including a first gate electrode, a first gate insulating layer, a crystalline semiconductor layer, an amorphous semiconductor layer, an impurity semiconductor layer, a source electrode and a drain electrode in contact with the impurity semiconductor layer, a second gate insulating layer covering a region between the source electrode and the drain electrode, and a second gate electrode over the second gate insulating layer. In the photoelectric conversion element, a light-receiving portion is provided in the region between the source electrode and the drain electrode, the first gate electrode includes a light-shielding material and overlaps with the entire surface of the crystalline semiconductor layer and the amorphous semiconductor layer, the second gate electrode includes a light-transmitting material and overlaps with the light-receiving portion, and the first gate electrode is electrically connected to the source electrode or the drain electrode is provided.
摘要翻译：一种光电转换元件，包括与杂质半导体层接触的第一栅电极，第一栅极绝缘层，结晶半导体层，非晶半导体层，杂质半导体层，源电极和漏电极，第二栅绝缘层覆盖源电极和漏电极之间的区域，以及覆盖在第二栅极绝缘层上的第二栅电极。在光电转换元件中，在源电极和漏电极之间的区域中设置受光部，第一栅电极包括遮光材料并与结晶半导体层和非晶半导体的整个表面重叠第二栅极包括透光材料并与光接收部分重叠，并且第一栅电极与源电极或漏电极电连接。

3. 发明申请

US20120146026A1 PHOTOELECTRIC CONVERSION ELEMENT, PHOTOELECTRIC CONVERSION CIRCUIT, AND DISPLAY DEVICE 有权
标题翻译：光电转换元件，光电转换电路和显示器件
公开(公告)号：US20120146026A1
公开(公告)日：2012-06-14
申请号：US13311665
申请日：2011-12-06
申请人： Tsudoi Nagi , Koji Dairiki
发明人： Tsudoi Nagi , Koji Dairiki
IPC分类号： H01L31/0376
CPC分类号： H01L31/02327 , H01L27/12 , H01L27/1214 , H01L29/66757 , H01L31/102 , H01L31/20
摘要： A photoelectric conversion, element including a first gate electrode, a first gate insulating layer, a crystalline semiconductor layer an amorphous semiconductor layer, an impurity semiconductor layer, a source electrode and a drain electrode in contact with the impurity semiconductor layer, a second gate insulating layer covering; a region between the source electrode and the drain electrode, and a second gate electrode over the second gate insulating layer. In the photoelectric conversion element, a Sight-receiving portion is provided in the region between the source electrode and the drain electrode, the first gate electrode includes a light-shielding material and overlaps with the entire surface of the crystalline semiconductor layer and the amorphous semiconductor layer, the second gate electrode includes a light-transmitting material and overlaps with, the light-receiving portion, and the first gate electrode is electrically connected to the source electrode or the drain electrode is provided.
摘要翻译：光电转换元件，包括与杂质半导体层接触的第一栅电极，第一栅极绝缘层，结晶半导体层，非晶半导体层，杂质半导体层，源电极和漏电极，第二栅极绝缘层盖; 源极电极和漏极电极之间的区域，以及位于第二栅极绝缘层上的第二栅极电极。在光电转换元件中，在源电极和漏极之间的区域中设置有视觉接收部，第一栅电极包括遮光材料，并与结晶半导体层和非晶半导体的整个表面重叠第二栅电极包括透光材料并与光接收部分重叠，并且第一栅极电连接到源电极或漏电极。

4. 发明申请

US20110309361A1 Photoelectric Conversion Element, Display Device, Electronic Device, and Method for Manufacturing Photoelectric Conversion Element 有权
标题翻译：光电转换元件，显示装置，电子装置以及光电转换元件的制造方法
公开(公告)号：US20110309361A1
公开(公告)日：2011-12-22
申请号：US13163166
申请日：2011-06-17
申请人： Koji Dairiki , Hidekazu Miyairi , Tsudoi Nagi
发明人： Koji Dairiki , Hidekazu Miyairi , Tsudoi Nagi
IPC分类号： H01L31/0368 , H01L31/0376 , H01L31/0224 , H01L31/18
CPC分类号： H01L27/1214 , H01L29/04 , H01L29/78648 , H01L29/78696
摘要： A photoelectric conversion element includes a first conductive layer over a substrate; a first insulating layer covering the first conductive layer; a first semiconductor layer over the first insulating layer; a second conductive layer formed over the first semiconductor layer; an impurity semiconductor layer over the second semiconductor layer; a second conductive layer over the impurity semiconductor layer; a second insulating layer covering the first semiconductor layer and the second conductive layer; and a light-transmitting third conductive layer over the second insulating layer. A first opening and a second opening are formed in the second insulating layer. In the first opening, the first semiconductor layer is connected to the third conductive layer. In the second opening, the first conductive layer is connected to the third conductive layer. In the first opening, a light-receiving portion surrounded by an electrode formed of the second conductive layer is provided.
摘要翻译：光电转换元件包括在衬底上的第一导电层; 覆盖所述第一导电层的第一绝缘层; 在所述第一绝缘层上的第一半导体层; 形成在所述第一半导体层上的第二导电层; 在所述第二半导体层上方的杂质半导体层; 杂质半导体层上的第二导电层; 覆盖所述第一半导体层和所述第二导电层的第二绝缘层; 以及在所述第二绝缘层上方的透光第三导电层。在第二绝缘层中形成第一开口和第二开口。在第一开口中，第一半导体层连接到第三导电层。在第二开口中，第一导电层连接到第三导电层。在第一开口中，设置由由第二导电层形成的电极包围的光接收部分。

5. 发明授权

US09525023B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US09525023B2
公开(公告)日：2016-12-20
申请号：US13473643
申请日：2012-05-17
申请人： Hidekazu Miyairi , Koji Dairiki , Yasuhiro Jinbo , Tomohiro Kimura , Yoshitaka Yamamoto
发明人： Hidekazu Miyairi , Koji Dairiki , Yasuhiro Jinbo , Tomohiro Kimura , Yoshitaka Yamamoto
IPC分类号： H01L29/10 , H01L29/04 , H01L29/417 , H01L29/786
CPC分类号： H01L29/04 , H01L29/41733 , H01L29/78618 , H01L29/78672 , H01L29/78678 , H01L29/78696
摘要： One embodiment of the present invention is a semiconductor device which includes a gate electrode; a gate insulating film formed to cover the gate electrode; a semiconductor layer formed over the gate insulating film and placed above the gate electrode; a second insulating film formed over the semiconductor layer; a first insulating film formed over a top surface and a side surface of the second insulating film, a side surface of the semiconductor layer, and the gate insulating film; silicon layers and which are formed over the first insulating film and electrically connected to the semiconductor layer; and a source electrode and a drain electrode which are formed over the silicon layers. The source electrode and the drain electrode are electrically separated from each other over the first insulating film. The semiconductor layer is not in contact with each of the source electrode and the drain electrode.
摘要翻译：本发明的一个实施例是包括栅电极的半导体器件; 形成为覆盖所述栅电极的栅极绝缘膜; 形成在所述栅极绝缘膜上并位于所述栅极电极上方的半导体层; 形成在所述半导体层上的第二绝缘膜; 形成在第二绝缘膜的顶表面和侧表面上的第一绝缘膜，半导体层的侧表面和栅极绝缘膜; 硅层，其形成在第一绝缘膜上并电连接到半导体层; 以及形成在硅层上的源电极和漏电极。源电极和漏电极在第一绝缘膜上彼此电分离。半导体层不与源电极和漏电极中的每一个接触。

6. 发明授权

US08619003B2 Semiconductor device with wireless communication 有权
标题翻译：具有无线通信的半导体器件
公开(公告)号：US08619003B2
公开(公告)日：2013-12-31
申请号：US12053932
申请日：2008-03-24
申请人： Koji Dairiki , Konami Izumi
发明人： Koji Dairiki , Konami Izumi
IPC分类号： H01Q21/00 , H01Q1/38 , H01Q5/00 , H01Q9/04 , H01L23/34 , H01L23/48 , H01L23/52 , H01L29/40 , H01L23/58
CPC分类号： H01L25/0657 , H01L21/6835 , H01L23/48 , H01L23/5385 , H01L23/58 , H01L23/645 , H01L23/66 , H01L24/32 , H01L24/48 , H01L2221/68318 , H01L2221/6835 , H01L2221/68368 , H01L2223/6677 , H01L2224/05554 , H01L2224/48091 , H01L2224/48157 , H01L2225/06506 , H01L2225/06527 , H01L2924/00014 , H01L2924/01002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01023 , H01L2924/01025 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/0104 , H01L2924/01042 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01054 , H01L2924/01073 , H01L2924/01074 , H01L2924/01076 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/07811 , H01L2924/10253 , H01L2924/10329 , H01L2924/12041 , H01L2924/12042 , H01L2924/12043 , H01L2924/12044 , H01L2924/1306 , H01L2924/14 , H01L2924/1461 , H01L2924/15159 , H01L2924/15788 , H01L2924/19041 , H01L2924/19043 , H01L2924/30105 , H01L2924/3011 , H01Q1/2283 , H01Q9/0407 , H01Q9/285 , H01Q13/10 , H01Q23/00 , H01L2924/3512 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： To provide a semiconductor device in which wireless communication is performed between devices formed over different substrates and connection defects of wirings are reduced. A first device having a first antenna is provided over a first substrate, a second device having a second antenna which can communicate with the first antenna is provided over a second substrate, and the first substrate and the second substrate are bonded to each other to manufacture a semiconductor device. The first substrate and the second substrate are bonded to each other by bonding with a bonding layer interposed therebetween, anodic bonding, or surface activated bonding.
摘要翻译：为了提供在不同基板之间形成的器件之间执行无线通信的半导体器件，并且布线的连接缺陷被减少。具有第一天线的第一装置设置在第一基板上，具有可与第一天线连通的第二天线的第二装置设置在第二基板上，并且第一基板和第二基板彼此接合以制造半导体器件。第一基板和第二基板通过与其间的接合层的粘合，阳极接合或表面活性接合而彼此接合。

7. 发明授权

US08236629B2 Method for manufacturing thin film integrated circuit, and element substrate 有权
标题翻译：薄膜集成电路和元件基板的制造方法
公开(公告)号：US08236629B2
公开(公告)日：2012-08-07
申请号：US13100316
申请日：2011-05-04
申请人： Yoshitaka Dozen , Tomoko Tamura , Takuya Tsurume , Koji Dairiki
发明人： Yoshitaka Dozen , Tomoko Tamura , Takuya Tsurume , Koji Dairiki
IPC分类号： H01L21/00 , H01L21/46
CPC分类号： H01L27/1266 , H01L27/1214 , H01L27/1218 , H01L27/13 , H01L27/28 , H01L29/78603 , H01L2924/3511
摘要： Application form of and demand for an IC chip formed with a silicon wafer are expected to increase, and further reduction in cost is required. An object of the invention is to provide a structure of an IC chip and a process capable of producing at a lower cost. A feature of the invention is to use a metal film and a reactant having the metal film as a separation layer. An etching rate of the metal film or the reactant having metal is high, and a physical means in addition to a chemical means of etching the metal film or the reactant having metal can be used in the invention. Thus, the IDF chip can be manufactured more simply and easily in a short time.
摘要翻译：预期由硅晶片形成的IC芯片的应用形式和需求将增加，并且需要进一步降低成本。本发明的目的是提供一种IC芯片的结构和能够以较低成本生产的方法。本发明的一个特征是使用具有金属膜的金属膜和反应物作为分离层。金属膜或具有金属的反应物的蚀刻速率高，并且除了蚀刻金属膜的化学方法或具有金属的反应物之外的物理手段可以用于本发明。因此，可以在短时间内更容易地制造IDF芯片。

8. 发明授权

US08227851B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08227851B2
公开(公告)日：2012-07-24
申请号：US12952766
申请日：2010-11-23
申请人： Tomoyuki Aoki , Koji Dairiki , Yuugo Goto
发明人： Tomoyuki Aoki , Koji Dairiki , Yuugo Goto
IPC分类号： H01L27/112
CPC分类号： H01L27/13 , G06K19/07749 , H01L21/6835 , H01L23/5227 , H01L23/552 , H01L23/576 , H01L23/585 , H01L27/105 , H01L27/11509 , H01L27/11526 , H01L27/11546 , H01L27/1203 , H01L27/124 , H01L27/1266 , H01L29/78618 , H01L2221/6835 , H01L2221/68368 , H01L2924/0002 , H01L2924/12044 , H01L2924/30105 , H01Q1/2208 , H01L2924/00
摘要： It is an object of the invention to provide semiconductor devices which can protect privacy of consumers or holders of commercial products and control the communication range according to use, even when the semiconductor device which can exchange data without contact is mounted on the commercial products. A semiconductor device of the invention includes an element group including a plurality of transistors over a substrate; a first conductive film functioning as an antenna over the element group; a second conductive film surrounding the first conductive film; an insulating film covering the first and second end portions; and a third conductive film over the insulating film. The first conductive film is provided in the shape of a coil, and each end portion of the first conductive film is connected to the element group. First and second end portions of the second conductive film are not connected to each other.
摘要翻译：本发明的目的是提供可以保护消费者或商业产品持有人的隐私的半导体器件，并且即使当可以将交换数据而没有接触的半导体器件安装在商业产品上时，也可以根据使用来控制通信范围。本发明的半导体器件包括在衬底上包括多个晶体管的元件组; 用作元件组上的天线的第一导电膜; 围绕所述第一导电膜的第二导电膜; 覆盖所述第一和第二端部的绝缘膜; 和绝缘膜上的第三导电膜。第一导电膜设置为线圈形状，并且第一导电膜的每个端部连接到元件组。第二导电膜的第一端部和第二端部彼此不连接。

9. 发明授权

US08207026B2 Manufacturing method of thin film transistor and manufacturing method of display device 有权
标题翻译：薄膜晶体管的制造方法及显示装置的制造方法
公开(公告)号：US08207026B2
公开(公告)日：2012-06-26
申请号：US12693037
申请日：2010-01-25
申请人： Hideomi Suzawa , Takafumi Mizoguchi , Koji Dairiki , Mayumi Mikami , Yumiko Saito
发明人： Hideomi Suzawa , Takafumi Mizoguchi , Koji Dairiki , Mayumi Mikami , Yumiko Saito
IPC分类号： H01L21/764
CPC分类号： H01L27/1288 , H01L27/1214
摘要： To provide a method for manufacturing a thin film transistor and a display device using a small number of masks, a thin film transistor is manufactured in such a manner that a first conductive film, an insulating film, a semiconductor film, an impurity semiconductor film, and a second conductive film are stacked; then, a resist mask is formed thereover; first etching is performed to form a thin-film stack body; second etching in which the first conductive film is side-etched is performed by dry-etching to form a gate electrode layer; and a source electrode, a drain electrode, and the like are formed. Before the dry etching, it is preferred that at least a side surface of the etched semiconductor film be oxidized.
摘要翻译：为了提供制造薄膜晶体管的方法和使用少量掩模的显示装置，制造薄膜晶体管，使得第一导电膜，绝缘膜，半导体膜，杂质半导体膜，并且第二导电膜被堆叠; 然后在其上形成抗蚀剂掩模; 执行第一蚀刻以形成薄膜堆叠体; 通过干蚀刻进行第一导电膜被侧蚀刻的第二蚀刻，以形成栅电极层; 并且形成源电极，漏电极等。在干蚀刻之前，优选地，蚀刻的半导体膜的至少一个侧表面被氧化。

10. 发明申请

US20120129288A1 DISPLAY DEVICE AND MANUFACTURING METHOD OF THE SAME 有权
标题翻译：其显示装置及其制造方法
公开(公告)号：US20120129288A1
公开(公告)日：2012-05-24
申请号：US13361998
申请日：2012-01-31
申请人： Satoshi KOBAYASHI , Ikuko Kawamata , Koji Dairiki , Shigeki Komori , Toshiyuki Isa , Shunpei Yamazaki
发明人： Satoshi KOBAYASHI , Ikuko Kawamata , Koji Dairiki , Shigeki Komori , Toshiyuki Isa , Shunpei Yamazaki
IPC分类号： H01L33/08 , H01L21/336
CPC分类号： H01L29/04 , H01L29/41733 , H01L29/4908 , H01L29/66765 , H01L29/78696
摘要： A display device including a thin film transistor with high electric characteristics and high reliability, and a method for manufacturing the display device with high mass-productivity. In a display device including an inverted-staggered channel-stop-type thin film transistor, the inverted-staggered channel-stop-type thin film transistor includes a microcrystalline semiconductor film including a channel formation region, and an impurity region containing an impurity element of one conductivity type is selectively provided in a region which is not overlapped with source and drain electrodes, in the channel formation region of the microcrystalline semiconductor film.
摘要翻译：一种包括具有高电特性和高可靠性的薄膜晶体管的显示装置，以及具有高批量生产率的显示装置的制造方法。在包括反交错通道停止型薄膜晶体管的显示装置中，反交错通道停止型薄膜晶体管包括包含沟道形成区的微晶半导体膜，以及含有杂质元素的杂质区在微晶半导体膜的沟道形成区域中，在不与源极和漏极重叠的区域中选择性地提供一种导电型。

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