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    • 1. 发明授权
    • Electrophotographic light-sensitive element with amorphous C overlayer
    • 具有无定形C覆盖层的电子照相光敏元件
    • US4675265A
    • 1987-06-23
    • US844003
    • 1986-03-25
    • Toyoki KazamaKoichi AizawaKiyoto YamaguchiKenichi HaraToshiyuki Iijima
    • Toyoki KazamaKoichi AizawaKiyoto YamaguchiKenichi HaraToshiyuki Iijima
    • G03G5/082G03G5/14
    • G03G5/08214
    • Electrophotographic light-sensitive elements according to the invention comprise(a) a conductive support;(b) a photoconductive layer; and(c) a surface protective layer.The conductive support is formed in a sheet-like or cylindrical shape from any suitable conductive material, and acts as an electrode of the light-sensitive element as well as acting as a physical support. The photoconductive layer comprises amorphous hydrogenated silicon having a high absorption efficiency and photoconductivity. The a--Si:H of a photoconductive layer may contain other elements such as fluorine, carbon, nitrogen and germanium, and may be doped with elements belonging to groups III and V of the periodic table. The surface protective layer is the outermost layer of an electrophotographic light-sensitive element according to the invention, and imparts resistance to environmental conditions. The surface protective layer comprises hydrogenated amorphous carbon, and may additionally contain silicon, nitrogen, oxygen or fluorine. The percentage of hydrogen can vary from 1 to 60 mole percent depending upon the conditions under which the surface layer is formed. Preferably, hydrogen is between 10 and 40 mole percent.
    • 根据本发明的电子照相感光元件包括(a)导电支撑体; (b)光电导层; 和(c)表面保护层。 导电支撑件由任何合适的导电材料形成为片状或圆柱形,并且用作光敏元件的电极以及用作物理支撑件。 光电导层包括具有高吸收效率和光电导性的无定形氢化硅。 光电导层的a-Si:H可以含有其它元素如氟,碳,氮和锗,并且可以掺杂属于元素周期表的III和Ⅴ族的元素。 表面保护层是根据本发明的电子照相感光元件的最外层,并赋予对环境条件的抵抗力。 表面保护层包括氢化无定形碳,并且可另外含有硅,氮,氧或氟。 取决于形成表面层的条件,氢的百分比可以在1至60摩尔%之间变化。 优选地,氢在10至40摩尔%之间。