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    • 4. 发明授权
    • Apparatus and method for evaluating orientation film
    • 用于评估取向膜的装置和方法
    • US5532488A
    • 1996-07-02
    • US305905
    • 1994-09-13
    • Mitsuru IshibashiHideyuki SasakiTatsuo NomakiAkira TanakaRei Hasegawa
    • Mitsuru IshibashiHideyuki SasakiTatsuo NomakiAkira TanakaRei Hasegawa
    • G01N21/21G02F1/1337G01J4/00
    • G02F1/133784G01N21/21
    • An orientation film evaluating apparatus and a rubbing processing apparatus by which the orientation capability for a liquid crystal orientation film can be measured quantitatively with high sensitivity and accuracy even during an actual production process, and an orientation condition is controlled precisely so as to obtain a stable production condition and to improve productivity and yield therefor. The orientation film evaluating apparatus includes: a unit for radiating infrared light; a polarizing portion which polarizes the infrared at varied angles to an orientation film, and for irradiating the polarized infrared lights to the orientation film; a detection portion which detects infrared light reflected upon the orientation film; and an evaluating portion which obtains a difference of absorbance of infrared light detected by the detection portion with respect to a polarized direction of the orientation film, and which evaluates an orientation capability of the orientation film.
    • 即使在实际的制造过程中也能以高的灵敏度和精度定量地测量液晶取向膜的取向能力的定向膜评价装置和摩擦处理装置,并且精确地控制取向条件以获得稳定的 生产条件,提高生产率和产量。 所述取向膜评价装置包括:用于照射红外光的单元; 使偏振部分以与取向膜成不同角度的红外线偏振,并将偏振红外光照射到取向膜上; 检测部,其检测在所述取向膜上反射的红外光; 以及评价部,其求出由所述检测部检测出的相对于所述取向膜的偏振方向的红外光的吸光度差,并且评价所述取向膜的取向能力。
    • 6. 发明授权
    • Method for manufacturing polycrystal semiconductor film
    • 多晶半导体膜的制造方法
    • US5970368A
    • 1999-10-19
    • US939660
    • 1997-09-29
    • Hideyuki SasakiMichihiro OoseIsao SuzukiShiro TakenoMitsuhiro TomitaYoshito KawakyuYuki MatsuuraHiroshi Mitsuhashi
    • Hideyuki SasakiMichihiro OoseIsao SuzukiShiro TakenoMitsuhiro TomitaYoshito KawakyuYuki MatsuuraHiroshi Mitsuhashi
    • H01L21/20H01L21/205H01L29/04
    • H01L21/2026
    • There is disclosed a method for manufacturing a polycrystal semiconductor film comprising the steps of applying a high energy beam to a surface of a semiconductor film comprising an amorphous or a polycrystal semiconductor provided on a surface of a substrate to melt only the semiconductor film, and solidifying the film via a solid and liquid coexisting state to form a semiconductor film comprising a polycrystal semiconductor having a large grain diameter, by heating a liquid part using a difference in an electric resistance in the liquid and solid coexisting state to heat only the liquid part, and by extending the solidification time until the completion of solidifying of the molten liquid crystal film. Furthermore, as the base film of the semiconductor film, a material having a melting point of 1600.degree. C. and a thermal conductivity of 0.01 cal/cm.s..degree. C. is used to suppress heat dissipation from the molten liquid of the semiconductor to the substrate so that time until the complete solidification can be prolonged. Furthermore, the beam is irradiated so as to form a standing wave at a predetermined position of the surface of the semiconductor film to generate the heat density distribution having the same cycle with the standing wave and to melt the semiconductor film with the result that a polycrystal semiconductor film comprising a uniform and a large crystal grains by controlling the distribution of the crystal nuclei at the interface between the base film and the substrate.
    • 公开了一种制造多晶半导体膜的方法,包括以下步骤:将高能束施加到包括设置在基板表面上的非晶或多晶半导体的半导体膜的表面,以仅熔化半导体膜,并固化 通过固体和液体共存状态形成包含具有大粒径的多晶半导体的半导体膜,通过使用液体中的电阻差和固体共存状态加热液体部分以仅加热液体部分, 并延长凝固时间直到熔融液晶膜凝固完成。 此外,作为半导体膜的基膜,具有熔点为1600℃,导热率为0.01cal / cm 3的材料。 使用DEG来抑制从半导体的熔融液体到基板的散热,从而可以延长直到完全凝固的时间。 此外,照射光束以在半导体膜的表面的预定位置处形成驻波,以产生具有与驻波相同周期的热密度分布并熔化半导体膜,结果是多晶 通过控制在基膜和基板之间的界面处的晶核的分布而包含均匀和大的晶粒的半导体膜。