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    • 2. 发明授权
    • Magnetoresistive element and magnetic head
    • 磁阻元件和磁头
    • US07855859B2
    • 2010-12-21
    • US12005273
    • 2007-12-27
    • Shinji HaraKoji ShimazawaYoshihiro TsuchiyaTomohito MizunoTsuyoshi IchikiToshiyuki Ayukawa
    • Shinji HaraKoji ShimazawaYoshihiro TsuchiyaTomohito MizunoTsuyoshi IchikiToshiyuki Ayukawa
    • G11B5/33
    • G01R33/098B82Y25/00G01R33/093G11B5/3906H01L43/08
    • In an MR element, first and second ferromagnetic layers are antiferromagnetically coupled to each other through a spacer layer, and have magnetizations that are in opposite directions when no external magnetic field is applied thereto and that change directions in response to an external magnetic field. The spacer layer and the second ferromagnetic layer are stacked in this order on the first ferromagnetic layer. The first ferromagnetic layer includes a plurality of ferromagnetic material layers stacked, and an insertion layer made of a nonmagnetic material and inserted between respective two of the ferromagnetic material layers that are adjacent to each other along the direction in which the layers are stacked. The ferromagnetic material layers and the spacer layer each include a component whose crystal structure is a face-centered cubic structure. The spacer layer and the insertion layer are each composed of an element having an atomic radius greater than that of at least one element constituting the ferromagnetic material layers.
    • 在MR元件中,第一和第二铁磁层通过间隔层彼此反铁磁耦合,并且当不施加外部磁场并且响应于外部磁场改变方向时,具有相反方向的磁化。 间隔层和第二铁磁层依次堆叠在第一铁磁层上。 第一铁磁层包括堆叠的多个铁磁材料层和由非磁性材料制成的插入层,并且插入在彼此相邻的两个铁磁材料层之间,沿堆叠层的方向相邻。 铁磁材料层和间隔层各自包括晶体结构为面心立方结构的成分。 间隔层和插入层各自由原子半径大于构成铁磁体层的至少一个元素的原子半径的元素构成。
    • 3. 发明申请
    • Magnetoresistive element and magnetic head
    • 磁阻元件和磁头
    • US20090168264A1
    • 2009-07-02
    • US12005273
    • 2007-12-27
    • Shinji HaraKoji ShimazawaYoshihiro TsuchiyaTomohito MizunoTsuyoshi IchikiToshiyuki Ayukawa
    • Shinji HaraKoji ShimazawaYoshihiro TsuchiyaTomohito MizunoTsuyoshi IchikiToshiyuki Ayukawa
    • G11B5/33
    • G01R33/098B82Y25/00G01R33/093G11B5/3906H01L43/08
    • In an MR element, first and second ferromagnetic layers are antiferromagnetically coupled to each other through a spacer layer, and have magnetizations that are in opposite directions when no external magnetic field is applied thereto and that change directions in response to an external magnetic field. The spacer layer and the second ferromagnetic layer are stacked in this order on the first ferromagnetic layer. The first ferromagnetic layer includes a plurality of ferromagnetic material layers stacked, and an insertion layer made of a nonmagnetic material and inserted between respective two of the ferromagnetic material layers that are adjacent to each other along the direction in which the layers are stacked. The ferromagnetic material layers and the spacer layer each include a component whose crystal structure is a face-centered cubic structure. The spacer layer and the insertion layer are each composed of an element having an atomic radius greater than that of at least one element constituting the ferromagnetic material layers.
    • 在MR元件中,第一和第二铁磁层通过间隔层彼此反铁磁耦合,并且当不施加外部磁场并且响应于外部磁场改变方向时,具有相反方向的磁化。 间隔层和第二铁磁层依次堆叠在第一铁磁层上。 第一铁磁层包括堆叠的多个铁磁材料层和由非磁性材料制成的插入层,并且插入在彼此相邻的两个铁磁材料层之间,沿堆叠层的方向相邻。 铁磁材料层和间隔层各自包括晶体结构为面心立方结构的成分。 间隔层和插入层各自由原子半径大于构成铁磁体层的至少一个元素的原子半径的元素构成。