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1. 发明申请

US20100081256A1 Method for producing group III nitride compound semiconductor element 有权
标题翻译：制备III族氮化物半导体元件的方法
公开(公告)号：US20100081256A1
公开(公告)日：2010-04-01
申请号：US12585969
申请日：2009-09-29
申请人： Toshiya Uemura , Masanobu Ando , Tomoharu Shiraki , Masahiro Ohashi , Naoki Arazoe , Ryohei Inazawa
发明人： Toshiya Uemura , Masanobu Ando , Tomoharu Shiraki , Masahiro Ohashi , Naoki Arazoe , Ryohei Inazawa
IPC分类号： H01L21/302
CPC分类号： H01L33/0079 , H01L33/0095 , H01L33/44 , H01L33/46
摘要： A method for producing a Group III nitride compound semiconductor element includes growing an epitaxial layer containing a Group III nitride compound semiconductor using a different kind of substrate as an epitaxial growth substrate, adhering a supporting substrate to the top surface of the epitaxial growth layer through a conductive layer, and then removing the epitaxial growth substrate by laser lift-off. Before adhesion of the epitaxial layer and the supporting substrate, a first groove that at least reaches an interface between the bottom surface of the epitaxial layer and the epitaxial growth substrate from the top surface of the epitaxial layer formed on the epitaxial growth substrate and acts as an air vent communicating with the outside of a wafer when the epitaxial layer and the supporting substrate are joined to each other. Next, the epitaxial layer is divided into each chip by separating the epitaxial growth substrate by laser lift-off, and then removing the epitaxial layer serving as the outer periphery of each chip. Next, the outer peripheral side surface of the epitaxial layer of each chip is at least completely covered with an insulating protective film. Next, the supporting substrate is separated into each chip.
摘要翻译：制造III族氮化物化合物半导体元件的方法包括：使用不同种类的基板作为外延生长基板，生长含有III族氮化物化合物半导体的外延层，将支撑基板通过外延生长层的上表面附着在外延生长层的顶面导电层，然后通过激光剥离去除外延生长衬底。在外延层和支撑基板的粘合之前，形成至少到达外延层的底表面与外延生长衬底之间的界面的第一沟槽，该外延生长衬底从形成在外延生长衬底上的外延层的顶表面起作用当所述外延层和所述支撑基板彼此接合时与所述晶片的外部连通的通风口。接下来，通过用激光剥离分离外延生长衬底，然后除去作为每个芯片的外周的外延层，将外延层分成每个芯片。接下来，每个芯片的外延层的外周侧表面至少完全被绝缘保护膜覆盖。接下来，将支撑基板分离成各个芯片。

2. 发明授权

US08324083B2 Method for producing group III nitride compound semiconductor element 有权
标题翻译：制备III族氮化物半导体元件的方法
公开(公告)号：US08324083B2
公开(公告)日：2012-12-04
申请号：US12585969
申请日：2009-09-29
申请人： Toshiya Uemura , Masanobu Ando , Tomoharu Shiraki , Masahiro Ohashi , Naoki Arazoe , Ryohei Inazawa
发明人： Toshiya Uemura , Masanobu Ando , Tomoharu Shiraki , Masahiro Ohashi , Naoki Arazoe , Ryohei Inazawa
IPC分类号： H01L21/00 , H01L21/30 , H01L21/46
CPC分类号： H01L33/0079 , H01L33/0095 , H01L33/44 , H01L33/46
摘要： A method for producing a Group III nitride compound semiconductor element includes growing an epitaxial layer containing a Group III nitride compound semiconductor using a different kind of substrate as an epitaxial growth substrate, adhering a supporting substrate to the top surface of the epitaxial growth layer through a conductive layer, and then removing the epitaxial growth substrate by laser lift-off. Before adhesion of the epitaxial layer and the supporting substrate, a first groove that at least reaches an interface between the bottom surface of the epitaxial layer and the epitaxial growth substrate from the top surface of the epitaxial layer formed on the epitaxial growth substrate and acts as an air vent communicating with the outside of a wafer when the epitaxial layer and the supporting substrate are joined to each other. Next, the epitaxial layer is divided into each chip by separating the epitaxial growth substrate by laser lift-off, and then removing the epitaxial layer serving as the outer periphery of each chip. Next, the outer peripheral side surface of the epitaxial layer of each chip is at least completely covered with an insulating protective film. Next, the supporting substrate is separated into each chip.
摘要翻译：制造III族氮化物化合物半导体元件的方法包括：使用不同种类的基板作为外延生长基板，生长含有III族氮化物化合物半导体的外延层，将支撑基板通过外延生长层的上表面附着在外延生长层的顶面导电层，然后通过激光剥离去除外延生长衬底。在外延层和支撑基板的粘合之前，形成至少到达外延层的底表面与外延生长衬底之间的界面的第一沟槽，该外延生长衬底从形成在外延生长衬底上的外延层的顶表面起作用当所述外延层和所述支撑基板彼此接合时与所述晶片的外部连通的通风口。接下来，通过用激光剥离分离外延生长衬底，然后除去作为每个芯片的外周的外延层，将外延层分成每个芯片。接下来，每个芯片的外延层的外周侧表面至少完全被绝缘保护膜覆盖。接下来，将支撑基板分离成各个芯片。

3. 发明授权

US07781241B2 Group III-V semiconductor device and method for producing the same 有权
标题翻译： III-V族半导体器件及其制造方法
公开(公告)号：US07781241B2
公开(公告)日：2010-08-24
申请号：US11987420
申请日：2007-11-29
申请人： Masanobu Ando , Shigemi Horiuchi , Yoshinori Kinoshita , Ryohei Inazawa , Toshiya Uemura
发明人： Masanobu Ando , Shigemi Horiuchi , Yoshinori Kinoshita , Ryohei Inazawa , Toshiya Uemura
IPC分类号： H01L21/00
CPC分类号： H01L21/8252 , H01L33/0079
摘要： The method of the invention for producing a group III-V semiconductor device includes forming, on a base, a plurality of semiconductor devices isolated from one another, each semiconductor device having at least an n-layer proximal to the base, and a p-layer distal to the base, and having a p-electrode formed on the top surface of the p-layer, and a first low-melting-point metal diffusion preventing layer, the low-melting-point metal diffusion preventing layer being formed on the top surface of the p-electrode; forming, from a dielectric material, a side-surface protective film so as to cover a side surface of each semiconductor device; bonding the semiconductor device to a conductive support substrate via a low-melting-point metal layer; and removing the base through the laser lift-off process.
摘要翻译：本发明的用于制造III-V族半导体器件的方法包括在基底上形成彼此隔离的多个半导体器件，每个半导体器件至少具有靠近基极的n层，并且具有形成在p层顶表面上的p电极和第一低熔点金属扩散防止层，所述低熔点金属扩散防止层形成在所述p层上， p电极的顶表面; 从绝缘材料形成侧面保护膜以覆盖每个半导体器件的侧表面; 通过低熔点金属层将半导体器件接合到导电支撑衬底; 并通过激光剥离过程去除底座。

4. 发明申请

US20080149953A1 Group III-V semiconductor device and method for producing the same 有权
标题翻译： III-V族半导体器件及其制造方法
公开(公告)号：US20080149953A1
公开(公告)日：2008-06-26
申请号：US11987420
申请日：2007-11-29
申请人： Masanobu Ando , Shigemi Horiuchi , Yoshinori Kinoshita , Ryohei Inazawa , Toshiya Uemura
发明人： Masanobu Ando , Shigemi Horiuchi , Yoshinori Kinoshita , Ryohei Inazawa , Toshiya Uemura
IPC分类号： H01L21/76 , H01L33/00 , H01L21/02
CPC分类号： H01L21/8252 , H01L33/0079
摘要： The method of the invention for producing a group III-V semiconductor device includes forming, on a base, a plurality of semiconductor devices isolated from one another, each semiconductor device having at least an n-layer proximal to the base, and a p-layer distal to the base, and having a p-electrode formed on the top surface of the p-layer, and a first low-melting-point metal diffusion preventing layer, the low-melting-point metal diffusion preventing layer being formed on the top surface of the p-electrode; forming, from a dielectric material, a side-surface protective film so as to cover a side surface of each semiconductor device; bonding the semiconductor device to a conductive support substrate via a low-melting-point metal layer; and removing the base through the laser lift-off process.
摘要翻译：本发明的用于制造III-V族半导体器件的方法包括在基底上形成彼此隔离的多个半导体器件，每个半导体器件至少具有靠近基极的n层，并且具有形成在p层顶表面上的p电极和第一低熔点金属扩散防止层，所述低熔点金属扩散防止层形成在所述p层上， p电极的顶表面; 从绝缘材料形成侧面保护膜以覆盖每个半导体器件的侧表面; 通过低熔点金属层将半导体器件接合到导电支撑衬底; 并通过激光剥离过程去除底座。

5. 发明授权

US08138506B2 Group III nitride-based compound semiconductor light-emitting device 有权
标题翻译： III族氮化物系化合物半导体发光元件
公开(公告)号：US08138506B2
公开(公告)日：2012-03-20
申请号：US12654350
申请日：2009-12-17
申请人： Toshiya Uemura , Naoki Arazoe
发明人： Toshiya Uemura , Naoki Arazoe
IPC分类号： H01L27/15 , H01L31/12 , H01L33/00
CPC分类号： H01L33/38 , H01L33/0079 , H01L33/32 , H01L33/40 , H01L33/44
摘要： In the Group III nitride-based compound semiconductor light-emitting device of the invention, an non-light-emitting area is formed in a light-emitting layer. In a light-emitting diode where light is extracted on the side of an n-layer, an outer wiring trace portion and an inner wiring trace portion of an n-contact electrode impedes light emission from the light-emitting layer. Therefore, there are provided, at the interface between a p-layer and a p-contact electrode, high-resistance faces having a width wider than the orthogonal projections of contact areas between the outer and inner wiring trace portions and the n-layer on the interface between the p-contact electrode and the p-layer. Through this configuration, current flow is limited, and portions having a total area equivalent to that of the high-resistance faces of the light-emitting layer serve as non-light-emitting areas. Thus, current can be supplied preferentially to an area of the light-emitting area where the outer wiring trace portion and the inner wiring trace portion are difficult to shade light, whereby light extraction efficiency with respect to supplied current can be enhanced.
摘要翻译：在本发明的III族氮化物系化合物半导体发光元件中，在发光层中形成非发光区域。在n层中提取光的发光二极管中，n型接触电极的外部布线迹线部分和内侧布线迹线部分阻止来自发光层的发光。因此，在p层和p型接触电极之间的界面处设置有宽电阻面，其宽度大于外部和内侧布线迹线部分与n层之间的接触面积的正交突起 p接触电极和p层之间的界面。通过这种结构，限制了电流，具有与发光层的高电阻面相当的总面积的部分用作非发光区域。因此，可以优选地将电流提供给外部布线迹线部分和内部布线迹线部分难以遮光的发光区域的区域，从而可以提高相对于所提供的电流的光提取效率。

6. 外观设计

USD631017S1 Light emitting diode chip 有权
公开(公告)号：USD631017S1
公开(公告)日：2011-01-18
申请号：US29347626
申请日：2010-03-19
申请人： Naoki Arazoe , Toshiya Uemura
设计人： Naoki Arazoe , Toshiya Uemura

7. 发明申请

US20100327312A1 Group III nitride semiconductor light-emitting device and method for producing the same 有权
标题翻译： III族氮化物半导体发光器件及其制造方法
公开(公告)号：US20100327312A1
公开(公告)日：2010-12-30
申请号：US12801456
申请日：2010-06-09
申请人： Toshiya Uemura , Naoki Arazoe
发明人： Toshiya Uemura , Naoki Arazoe
IPC分类号： H01L33/30 , H01L21/20
CPC分类号： H01L33/20 , H01L33/007 , H01L33/0079 , H01L33/22 , H01L33/44
摘要： A group III nitride semiconductor light-emitting device includes: a conductive support; a p-electrode positioned on the support, a p-type layer containing a group III nitride semiconductor, an active layer and an n-type layer having a first surface, which are positioned in turn on the p-electrode; and an n-electrode positioned on the first surface of the n-type layer. A groove is formed in the first surface of the n-type layer in a pattern such that the first surface of the n-type layer is continuous. A light-transmitting insulating film is formed on side surface and bottom surface of the groove. The groove has a depth at least reaching the p-type layer. The n-electrode is formed in wiring form.
摘要翻译： III族氮化物半导体发光器件包括：导电支撑体; 位于载体上的p电极，包含III族氮化物半导体的p型层，具有第一表面的有源层和n型层，其依次位于p电极上; 以及位于n型层的第一表面上的n电极。在n型层的第一表面中以n型层的第一表面是连续的图案形成凹槽。在沟槽的侧表面和底表面上形成透光绝缘膜。槽具有至少到达p型层的深度。 n电极形成为布线形式。

8. 外观设计

USD631018S1 Light emitting diode chip 有权
标题翻译：发光二极管芯片
公开(公告)号：USD631018S1
公开(公告)日：2011-01-18
申请号：US29347627
申请日：2010-03-19
申请人： Naoki Arazoe , Toshiya Uemura
设计人： Naoki Arazoe , Toshiya Uemura

9. 发明授权

US08853720B2 Group III nitride semiconductor light-emitting device and method for producing the same 有权
标题翻译： III族氮化物半导体发光器件及其制造方法
公开(公告)号：US08853720B2
公开(公告)日：2014-10-07
申请号：US12801456
申请日：2010-06-09
申请人： Toshiya Uemura , Naoki Arazoe
发明人： Toshiya Uemura , Naoki Arazoe
IPC分类号： H01L33/00 , H01L33/44 , H01L33/20 , H01L33/22
CPC分类号： H01L33/20 , H01L33/007 , H01L33/0079 , H01L33/22 , H01L33/44
摘要： A group III nitride semiconductor light-emitting device includes: a conductive support; a p-electrode positioned on the support, a p-type layer containing a group III nitride semiconductor, an active layer and an n-type layer having a first surface, which are positioned in turn on the p-electrode; and an n-electrode positioned on the first surface of the n-type layer. A groove is formed in the first surface of the n-type layer in a pattern such that the first surface of the n-type layer is continuous. A light-transmitting insulating film is formed on side surface and bottom surface of the groove. The groove has a depth at least reaching the p-type layer. The n-electrode is formed in wiring form.
摘要翻译： III族氮化物半导体发光器件包括：导电支撑体; 位于载体上的p电极，包含III族氮化物半导体的p型层，具有第一表面的有源层和n型层，其依次位于p电极上; 以及位于n型层的第一表面上的n电极。在n型层的第一表面中以n型层的第一表面是连续的图案形成凹槽。在沟槽的侧表面和底表面上形成透光绝缘膜。槽具有至少到达p型层的深度。 n电极形成为布线形式。

10. 发明申请

US20110303938A1 Group III nitride semiconductor light-emitting element 审中-公开
标题翻译： III族氮化物半导体发光元件
公开(公告)号：US20110303938A1
公开(公告)日：2011-12-15
申请号：US12926837
申请日：2010-12-13
申请人： Toshiya Uemura , Naoki Arazoe , Yuhei Ikemoto
发明人： Toshiya Uemura , Naoki Arazoe , Yuhei Ikemoto
IPC分类号： H01L33/00
CPC分类号： H01L33/24 , H01L33/22 , H01L2933/0091
摘要： A group III nitride semiconductor light-emitting element having improved light extraction efficiency is provided. The light-emitting element has a plurality of dot-like grooves formed on a surface at the side joining to a p-electrode of a p-type layer. The groove has a depth reaching an n-type layer. Side surface of the groove is slanted such that a cross-section in an element surface direction is decreased toward the n-type layer from the p-type layer. Fine irregularities are formed on the surface at the side joining to an n-electrode of the n-type layer, except for a region on which the n-electrode is formed, and a translucent insulating film having a refractive index of from 1.5 to 2.3 is formed on the fine irregularities. Light extraction efficiency is improved by reflection of light to the n-type layer side by the groove and prevention of reflection to the n-type layer side by the insulating film.
摘要翻译：提供了具有提高光提取效率的III族氮化物半导体发光元件。发光元件在与p型层的p电极接合的一侧的表面上形成有多个点状槽。凹槽的深度达到n型层。凹槽的侧表面倾斜，使得元件表面方向的横截面从p型层向n型层减小。除了形成有n电极的区域以外，在与n型层的n电极接合的一侧的表面上形成微细凹凸，以及折射率为1.5〜2.3的半透明绝缘膜形成在细微的不规则上。通过由凹槽向n型层侧反射光并防止通过绝缘膜向n型层侧反射而提高光提取效率。

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