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1. 发明申请

US20100109456A1 WIRING COMPONENT FOR MOTOR COIL 有权
标题翻译：电机线圈接线组件
公开(公告)号：US20100109456A1
公开(公告)日：2010-05-06
申请号：US12609245
申请日：2009-10-30
申请人： Toshiya SUGIYAMA , Jun ABIKO , Yasutoshi YAMADA , Hiroyuki NAGATA
发明人： Toshiya SUGIYAMA , Jun ABIKO , Yasutoshi YAMADA , Hiroyuki NAGATA
IPC分类号： H02K11/00
CPC分类号： H02K3/50 , H02K2203/06 , H02K2203/09
摘要： A wiring component for a motor coil includes: a wire coil configured by a plurality of wire segments arranged in a circumferential direction so as to form a ring shape, each of the wire segments including an arc-shaped main-body portion made of a conductive wire rod bent in an arc shape, protruding portions formed at both end portions of the main-body portion and upright portions respectively formed at end portions of the protruding portions; an inner clip formed with a plurality of first holding portions at an outer circumferential surface of the inner clip; and an outer clip formed with a plurality of second holding portions at an inner circumferential surface of the outer clip. The inner clip and the outer clip are connected to each other so as to hold the wire coil between the first holding portions and the second holding portions.
摘要翻译：电动机线圈用配线部件包括：线圈，其由沿圆周方向排列成环状的多个线段构成，每个线段包括由导电性材料制成的弧形主体部分弯曲成圆弧状的线材，分别形成在突出部的端部的主体部和直立部的两端形成的突出部; 内夹，其在所述内夹的外周面形成有多个第一保持部; 以及在所述外夹具的内周面形成有多个第二保持部的外夹。内夹子和外夹子彼此连接以便将线圈夹持在第一保持部分和第二保持部分之间。

2. 发明申请

US20110309725A1 WIRING COMPONENT OF ROTATING ELECTRICAL MACHINE FOR VEHICLE 审中-公开
标题翻译：旋转电机机车配线组件
公开(公告)号：US20110309725A1
公开(公告)日：2011-12-22
申请号：US13072060
申请日：2011-03-25
申请人： Toshiya SUGIYAMA , Yasutoshi YAMADA
发明人： Toshiya SUGIYAMA , Yasutoshi YAMADA
IPC分类号： H02K11/00
CPC分类号： H02K3/522 , H02K2203/09
摘要： A wiring component of a rotating electrical machine for a vehicle, includes a segment wire provided at the rotating electrical machine formed in an annular shape, made of a conductive wire rod and arranged in a circumferential direction of the rotating electrical machine, wherein the segment wire includes a main body portion having a first straight portion, a second straight portion formed at each end portion of the main body portion by bending in a radial direction of the rotating electrical machine so as to have an obtuse angle between the first straight portion and the second straight portion and an upright portion formed at the second straight portion by bending in a rotational axis direction of the rotating electrical machine, and wherein the upright portions of the segment wires being adjacent to each other are in conduction with each other.
摘要翻译：一种用于车辆的旋转电机的布线部件，包括设置在旋转电机上的分段线，所述旋转电机形成为环形，由导电线材制成并且沿旋转电机的圆周方向布置，其中分段线包括具有第一直线部分的主体部分，通过沿着旋转电机的径向弯曲形成在主体部分的每个端部处的第二直线部分，以便在第一直线部分和第二直线部分之间具有钝角第二直线部分和通过在旋转电机的旋转轴线方向弯曲而形成在第二直线部分的直立部分，并且其中彼此相邻的分段线的直立部分彼此导通。

3. 发明申请

US20110220968A1 DEVICE 有权
标题翻译：设备
公开(公告)号：US20110220968A1
公开(公告)日：2011-09-15
申请号：US13042108
申请日：2011-03-07
申请人： Shinichi TAKAYAMA , Yasutoshi YAMADA
发明人： Shinichi TAKAYAMA , Yasutoshi YAMADA
IPC分类号： H01L23/528
CPC分类号： H01L27/0207 , G11C11/4094 , G11C11/4096 , G11C11/4097 , H01L27/10811 , H01L27/10876 , H01L27/10885 , H01L27/10897
摘要： A device includes a semiconductor substrate, a first local bit line formed in the semiconductor substrate and elongated in a first direction, a first insulating layer on the semiconductor substrate, a first global bit line formed on the first insulating layer, a first path formed in the first insulating layer to couple a first end of the first local bit line with the first global bit line, and a second path formed in the first insulating layer to couple a second end of the first local bit line with the first global bit line.
摘要翻译：一种器件包括半导体衬底，形成在半导体衬底中并在第一方向上延伸的第一局部位线，在半导体衬底上的第一绝缘层，形成在第一绝缘层上的第一全局位线，形成在第一绝缘层上的第一通路所述第一绝缘层将所述第一局部位线的第一端与所述第一全局位线耦合，以及形成在所述第一绝缘层中以将所述第一局部位线的第二端与所述第一全局位线耦合的第二路径。

4. 发明申请

US20140293721A1 SENSE AMPLIFIER CIRCUIT AND SEMICONDUCTOR DEVICE 有权
标题翻译： SENSE放大器电路和半导体器件
公开(公告)号：US20140293721A1
公开(公告)日：2014-10-02
申请号：US14306293
申请日：2014-06-17
申请人： Kazuhiko KAJIGAYA , Soichiro YOSHIDA , Yasutoshi YAMADA
发明人： Kazuhiko KAJIGAYA , Soichiro YOSHIDA , Yasutoshi YAMADA
IPC分类号： G11C11/4091
CPC分类号： G11C7/06 , G11C5/147 , G11C7/065 , G11C7/067 , G11C7/1087 , G11C11/4091
摘要： A single-ended sense amplifier circuit of the invention comprises first and second MOS transistors and first and second precharge circuits. The first MOS transistor drives the bit line to a predetermined voltage and switches connection between the bit line and a sense node and the second MOS transistor whose gate is connected to the sense node amplifies the signal via the first MOS transistor. The first precharge circuit precharges the bit line to a first potential and the second precharge circuit precharges the sense node to a second potential. Before sensing operation, the bit line is driven to the predetermined voltage when the above gate voltage is controlled to decrease. The predetermined voltage is appropriately set so that a required voltage difference at the sense node between high and low levels can be obtained near a changing point between charge transfer/distributing modes.
摘要翻译：本发明的单端读出放大器电路包括第一和第二MOS晶体管以及第一和第二预充电电路。第一MOS晶体管将位线驱动到预定电压并且切换位线和感测节点之间的连接，并且栅极连接到感测节点的第二MOS晶体管经由第一MOS晶体管放大信号。第一预充电电路将位线预充电到第一电位，而第二预充电电路将感测节点预充电到第二电位。在感测操作之前，当控制上述栅极电压降低时，位线被驱动到预定电压。适当地设定预定电压，使得可以在电荷转移/分配模式之间的变化点附近获得在高电平和低电平之间的感测节点处的所需电压差。

5. 发明申请

US20110261631A1 SEMICONDUCTOR DEVICE AND DATA PROCESSING SYSTEM COMPRISING SEMICONDUCTOR DEVICE 失效
标题翻译：包含半导体器件的半导体器件和数据处理系统
公开(公告)号：US20110261631A1
公开(公告)日：2011-10-27
申请号：US13174888
申请日：2011-07-01
申请人： Soichiro YOSHIDA , Kazuhiko KAJIGAYA , Yasutoshi YAMADA
发明人： Soichiro YOSHIDA , Kazuhiko KAJIGAYA , Yasutoshi YAMADA
IPC分类号： G11C7/06 , G11C7/00
CPC分类号： G11C7/1048 , G11C7/02 , G11C7/1051 , G11C7/1069 , G11C11/4091 , G11C11/4096 , G11C11/4097 , G11C2207/002
摘要： A semiconductor device comprises a sense amplifier circuit amplifying a signal transmitted through the bit line, first/second data lines transmitting the signal amplified by the sense amplifier circuit, a read amplifier circuit driven by a first voltage and amplifying the signal; first/second switch circuits controlling connection between the above components, first/second voltage setting circuits setting the second/third data lines to a second voltage lower than the first voltage. A predetermined voltage obtained by adding the second voltage to a threshold voltage of a transistor in the second/third switch circuit is applied to the gate terminal thereof, and ends of the data lines are connected to the source and drain terminals thereof.
摘要翻译：半导体器件包括放大通过位线传输的信号的读出放大器电路，传输由读出放大器电路放大的信号的第一/第二数据线，由第一电压驱动并放大该信号的读取放大器电路; 控制上述部件之间的连接的第一/第二开关电路，将第二/第三数据线设置为低于第一电压的第二电压的第一/第二电压设置电路。通过将第二电压加到第二/第三开关电路中的晶体管的阈值电压而获得的预定电压被施加到其栅极端，并且数据线的端部连接到其源极和漏极端子。

6. 发明申请

US20120275255A1 SEMICONDUCTOR DEVICE AND DATA PROCESSING SYSTEM COMPRISING SEMICONDUCTOR DEVICE 有权
标题翻译：包含半导体器件的半导体器件和数据处理系统
公开(公告)号：US20120275255A1
公开(公告)日：2012-11-01
申请号：US13543436
申请日：2012-07-06
申请人： Soichiro YOSHIDA , Kazuhiko KAJIGAYA , Yasutoshi YAMADA
发明人： Soichiro YOSHIDA , Kazuhiko KAJIGAYA , Yasutoshi YAMADA
IPC分类号： G11C7/12
CPC分类号： G11C7/1048 , G11C7/02 , G11C7/1051 , G11C7/1069 , G11C11/4091 , G11C11/4096 , G11C11/4097 , G11C2207/002
摘要： A semiconductor device comprises a sense amplifier circuit amplifying a signal transmitted through the bit line, first/second data lines transmitting the signal amplified by the sense amplifier circuit, a read amplifier circuit driven by a first voltage and amplifying the signal; first/second switch circuits controlling connection between the above components, first/second voltage setting circuits setting the second/third data lines to a second voltage lower than the first voltage. A predetermined voltage obtained by adding the second voltage to a threshold voltage of a transistor in the second/third switch circuit is applied to the gate terminal thereof, and ends of the data lines are connected to the source and drain terminals thereof.
摘要翻译：半导体器件包括放大通过位线传输的信号的读出放大器电路，传输由读出放大器电路放大的信号的第一/第二数据线，由第一电压驱动并放大该信号的读取放大器电路; 控制上述部件之间的连接的第一/第二开关电路，将第二/第三数据线设置为低于第一电压的第二电压的第一/第二电压设定电路。通过将第二电压加到第二/第三开关电路中的晶体管的阈值电压而获得的预定电压被施加到其栅极端，并且数据线的端部连接到其源极和漏极端子。

7. 发明申请

US20110063935A1 SEMICONDUCTOR DEVICE AND DATA PROCESSING SYSTEM COMPRISING SEMICONDUCTOR DEVICE 失效
公开(公告)号：US20110063935A1
公开(公告)日：2011-03-17
申请号：US12881750
申请日：2010-09-14
申请人： Soichiro YOSHIDA , Kazuhiko KAJIGAYA , Yasutoshi YAMADA
发明人： Soichiro YOSHIDA , Kazuhiko KAJIGAYA , Yasutoshi YAMADA
IPC分类号： G11C7/06
CPC分类号： G11C11/4096 , G11C7/1048 , G11C7/1051 , G11C7/1069 , G11C11/4091 , G11C11/4097 , G11C2207/002
摘要： A semiconductor device comprises a sense amplifier circuit amplifying a signal transmitted through the bit line, first/second data lines transmitting the signal amplified by the sense amplifier circuit, a read amplifier circuit driven by a first voltage and amplifying the signal; first/second switch circuits controlling connection between the above components, first/second voltage setting circuits setting the second/third data lines to a second voltage lower than the first voltage. A predetermined voltage obtained by adding the second voltage to a threshold voltage of a transistor in the second/third switch circuit is applied to the gate terminal thereof, and ends of the data lines are connected to the source and drain terminals thereof.

8. 发明申请

US20110063892A1 SENSE AMPLIFIER CIRCUIT AND SEMICONDUCTOR DEVICE 有权
标题翻译： SENSE放大器电路和半导体器件
公开(公告)号：US20110063892A1
公开(公告)日：2011-03-17
申请号：US12882789
申请日：2010-09-15
申请人： Kazuhiko KAJIGAYA , Soichiro YOSHIDA , Yasutoshi YAMADA
发明人： Kazuhiko KAJIGAYA , Soichiro YOSHIDA , Yasutoshi YAMADA
IPC分类号： G11C11/24 , G11C7/06
CPC分类号： G11C7/06 , G11C5/147 , G11C7/065 , G11C7/067 , G11C7/1087 , G11C11/4091
摘要： A single-ended sense amplifier circuit of the invention comprises first and second MOS transistors and first and second precharge circuits. The first MOS transistor drives the bit line to a predetermined voltage and switches connection between the bit line and a sense node and the second MOS transistor whose gate is connected to the sense node amplifies the signal via the first MOS transistor. The first precharge circuit precharges the bit line to a first potential and the second precharge circuit precharges the sense node to a second potential. Before sensing operation, the bit line is driven to the predetermined voltage when the above gate voltage is controlled to decrease. The predetermined voltage is appropriately set so that a required voltage difference at the sense node between high and low levels can be obtained near a changing point between charge transfer/distributing modes.
摘要翻译：本发明的单端读出放大器电路包括第一和第二MOS晶体管以及第一和第二预充电电路。第一MOS晶体管将位线驱动到预定电压并且切换位线和感测节点之间的连接，并且栅极连接到感测节点的第二MOS晶体管经由第一MOS晶体管放大信号。第一预充电电路将位线预充电到第一电位，而第二预充电电路将感测节点预充电到第二电位。在感测操作之前，当控制上述栅极电压降低时，位线被驱动到预定电压。适当地设定预定电压，使得可以在电荷转移/分配模式之间的变化点附近获得在高电平和低电平之间的感测节点处的所需电压差。

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