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1. 发明授权

US4796067A Semiconductor device having a superlattice structure 失效
标题翻译：具有超晶格结构的半导体器件
公开(公告)号：US4796067A
公开(公告)日：1989-01-03
申请号：US828254
申请日：1986-02-11
申请人： Akira Shimizu , Toshitami Hara , Hidetoshi Nojiri , Isao Hakamada , Seiichi Miyazawa , Yoshinobu Sekiguchi
发明人： Akira Shimizu , Toshitami Hara , Hidetoshi Nojiri , Isao Hakamada , Seiichi Miyazawa , Yoshinobu Sekiguchi
IPC分类号： H01L29/80 , H01L21/331 , H01L29/15 , H01L29/201 , H01L29/73 , H01L29/737 , H01L29/812 , H01S5/00 , H01S5/343 , H01L27/12 , H01L33/00
CPC分类号： B82Y20/00 , H01L29/155 , H01L29/7376 , H01L29/8122 , H01S5/34313 , H01S5/3432
摘要： A semiconductor device having a plurality of laminated semiconductor layers in which a current flows in the direction of lamination. A superlattice layer is formed in at least one of the layers and the potential of the quantum well of the superlattice layer is lower than the potential of the semiconductor layer in which the superlattice layer is formed. The potential of the barrier of the superlattice layer is higher than the potential of the semiconductor layer in which said superlattice layer is formed.
摘要翻译：一种半导体器件，其具有电流沿层叠方向流动的多个层叠半导体层。在至少一层中形成超晶格层，并且超晶格层的量子阱的电位低于其中形成超晶格层的半导体层的电位。超晶格层的势垒的电位高于形成所述超晶格层的半导体层的电位。

2. 发明授权

US4971415A Multibeam emitting device 失效
标题翻译：多波束发射装置
公开(公告)号：US4971415A
公开(公告)日：1990-11-20
申请号：US312311
申请日：1989-02-17
申请人： Toshitami Hara , Akira Shimizu , Yoshinobu Sekiguchi , Seiichi Miyazawa , Hidetoshi Nojiri , Isao Hakamada
发明人： Toshitami Hara , Akira Shimizu , Yoshinobu Sekiguchi , Seiichi Miyazawa , Hidetoshi Nojiri , Isao Hakamada
IPC分类号： H01L27/15 , H01L33/20 , H01S5/026 , H01S5/062 , H01S5/125 , H01S5/40 , H04N1/036
CPC分类号： H04N1/036 , H01L27/153 , H01S5/026 , H01S5/125 , H01S5/4031 , H01L33/20 , H01S5/06243 , H01S5/4056
摘要： In a multibeam emitting device provided with a plurality of semiconductive light-emitting elements monolithically formed on a semiconductor substrate, the semiconductor light-emitting elements are formed so that the directions of emission of the lights emitted from the elements differ from one another.
摘要翻译：在设置有多个半导体发光元件的单片半导体发光元件的多光束发射器件中，半导体发光元件被形成为使得从元件发射的光的发射方向彼此不同。

3. 发明授权

US4829534A Semiconductor laser device having a semiconductor region for creating a depletion layer in a laser active layer for controlling current flow therethrough 失效
标题翻译：半导体激光器件具有半导体区域，用于在激光有源层中形成用于控制电流流过的耗尽层
公开(公告)号：US4829534A
公开(公告)日：1989-05-09
申请号：US814772
申请日：1985-12-30
申请人： Seiichi Miyazawa , Hidetoshi Nojiri , Toshitami Hara , Akira Shimizu , Yoshinobu Sekiguchi , Isao Hakamada
发明人： Seiichi Miyazawa , Hidetoshi Nojiri , Toshitami Hara , Akira Shimizu , Yoshinobu Sekiguchi , Isao Hakamada
IPC分类号： H01S5/00 , H01S5/026 , H01S5/042 , H01S5/20
CPC分类号： H01S5/0424 , H01S5/0425 , H01S5/2059
摘要： A semiconductor laser device wherein a depletion layer is formed in a laser activation layer by biasing the laser device and a third terminal controls an injection current flowing between first and second terminals of the device.
摘要翻译：一种半导体激光器件，其中通过偏置激光器件在激光激活层中形成耗尽层，并且第三端子控制在器件的第一和第二端子之间流动的注入电流。

4. 发明授权

US4794611A Semiconductor laser having superlattice structure 失效
标题翻译：半导体激光器具有超晶格结构
公开(公告)号：US4794611A
公开(公告)日：1988-12-27
申请号：US809770
申请日：1985-12-17
申请人： Toshitami Hara , Yoshinobu Sekiguchi , Seiichi Miyazawa , Hidetoshi Nojiri , Akira Shimizu , Isao Hakamada
发明人： Toshitami Hara , Yoshinobu Sekiguchi , Seiichi Miyazawa , Hidetoshi Nojiri , Akira Shimizu , Isao Hakamada
IPC分类号： H01S5/00 , H01S5/20 , H01S5/32 , H01S5/34 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/20 , H01S5/34 , H01S5/2004 , H01S5/2009 , H01S5/2013 , H01S5/3211 , H01S5/3216
摘要： There is disclosed a semiconductor laser having a super lattice structure near an active layer, in which the super lattice structure consists of at least two types of materials which have different bandgaps, the materials are regularly and alternately arranged, and thickness of adjacent layers of the materials change such that a ratio of the thicknesses changes within the super lattice structure toward an active layer.
摘要翻译：公开了一种在有源层附近具有超晶格结构的半导体激光器，其中超晶格结构由至少两种具有不同带隙的材料组成，材料规则地和交替地布置，并且相邻层的厚度材料的变化使得厚度的比例在超晶格结构内向活性层变化。

5. 发明授权

US4794609A Semiconductor laser provided with a plurality of lasers in the form of an array 失效
标题翻译：半导体激光器设置有阵列形式的多个激光器
公开(公告)号：US4794609A
公开(公告)日：1988-12-27
申请号：US807504
申请日：1985-12-11
申请人： Toshitami Hara , Seiichi Miyazawa , Hidetoshi Nojiri , Akira Shimizu , Yoshinobu Sekiguchi , Isao Hakamada
发明人： Toshitami Hara , Seiichi Miyazawa , Hidetoshi Nojiri , Akira Shimizu , Yoshinobu Sekiguchi , Isao Hakamada
IPC分类号： H01S5/00 , H01S5/026 , H01S5/40 , H01S3/19 , H01L31/12
CPC分类号： H01S5/0264 , H01S5/4031
摘要： A semiconductor laser comprises a plurality of lasers provided in the form of an array, the lasers being monolithically formed, a plurality of photodetector elements being monolithically formed, a plurality of first separating portions for separating the lasers and the photodetector elements from each other, and at least one second separating portion for separating the plurality of lasers from one another and the plurality of photodetector elements from one another.
摘要翻译：半导体激光器包括以阵列形式提供的多个激光器，激光器被单片地形成，多个光电检测器元件被单片地形成，多个用于将激光器和光电检测器元件彼此分开的第一分离部分，以及至少一个第二分离部分，用于将所述多个激光彼此分离，并且所述多个光电检测器元件彼此分离。

6. 发明授权

US4799229A Semiconductor laser array 失效
标题翻译：半导体激光阵列
公开(公告)号：US4799229A
公开(公告)日：1989-01-17
申请号：US49165
申请日：1987-05-13
申请人： Seiichi Miyazawa , Toshitami Hara , Hidetoshi Nojiri , Yoshinobu Sekiguchi , Mitsutoshi Hasegawa , Sotomitsu Ikeda
发明人： Seiichi Miyazawa , Toshitami Hara , Hidetoshi Nojiri , Yoshinobu Sekiguchi , Mitsutoshi Hasegawa , Sotomitsu Ikeda
IPC分类号： G11B7/125 , G11B7/14 , H01S5/10 , H01S5/40 , H01S3/19
CPC分类号： G11B7/127 , H01S5/10 , H01S5/4031 , G11B7/14 , H01S5/4056
摘要： A semiconductor laser array includes plural semiconductor laser elements each emitting light from two end faces constituting resonant planes and monolithically formed on a semiconductor substrate, in which the mutual angle of the beams emerging from one end of semiconductor lasers is different from that from the other end and in which the beam angle is selected as a non-zero finite value at least one end.
摘要翻译：半导体激光器阵列包括多个半导体激光元件，每个半导体激光元件从构成谐振平面的两个端面发射光并且单片地形成在半导体衬底上，其中从半导体激光器的一端出射的光束的相互角度与另一端的相互角度不同并且其中束角被选择为至少一端的非零有限值。

7. 发明授权

US08259145B2 Image forming apparatus with scanning position corrected by non-imaging laser beam 有权
标题翻译：具有通过非成像激光束校正的扫描位置的图像形成装置
公开(公告)号：US08259145B2
公开(公告)日：2012-09-04
申请号：US12785385
申请日：2010-05-21
申请人： Noriyuki Chino , Yuji Uramoto , Shoji Kanemura , Kota Kiyama , Junji Yasuda , Katsuhiko Takano , Yoshinobu Sekiguchi , Noboru Koumura
发明人： Noriyuki Chino , Yuji Uramoto , Shoji Kanemura , Kota Kiyama , Junji Yasuda , Katsuhiko Takano , Yoshinobu Sekiguchi , Noboru Koumura
IPC分类号： B41J2/47 , B41J2/435
CPC分类号： B41J2/473 , G02B26/127 , G06K15/1219
摘要： An image forming apparatus capable of enhancing the accuracy of the scanning position of a laser beam to thereby obtain a more precise image. Optical sensors detect reflected light from a surface of a photosensitive drum. During image formation, the apparatus detects the scanning speed of the laser beam in a main scanning direction based on detection signals from the respective optical sensors in each of divisional sections of an image forming area in the main scanning direction. The apparatus corrects magnification of the image in the main scanning direction, based on results of detection of the scanning speed of the laser beam in the main scanning direction.
摘要翻译：一种图像形成装置，其能够提高激光束的扫描位置的精度，从而获得更精确的图像。光学传感器检测来自感光鼓表面的反射光。在图像形成期间，该装置基于来自主扫描方向上的图像形成区域的每个分割部分中的各个光学传感器的检测信号，在主扫描方向上检测激光束的扫描速度。该装置基于在主扫描方向上的激光束的扫描速度的检测结果来校正图像在主扫描方向上的放大率。

8. 发明授权

US07550305B2 Method of forming light-emitting element 失效
标题翻译：形成发光元件的方法
公开(公告)号：US07550305B2
公开(公告)日：2009-06-23
申请号：US11874452
申请日：2007-10-18
申请人： Kenji Yamagata , Takao Yonehara , Yoshinobu Sekiguchi , Kojiro Nishi
发明人： Kenji Yamagata , Takao Yonehara , Yoshinobu Sekiguchi , Kojiro Nishi
IPC分类号： H01L21/00 , H01L21/30 , H01L21/46
CPC分类号： H01L33/0079 , H01L33/08 , H01L33/20
摘要： An object of the present invention is to provide a method of forming a light-emitting element at a lower cost than a conventional cost with suppressing the deterioration of the substrate due to thermal distortion in comparison with a conventional method of recycling a substrate and further having an effect equal to that of the method of recycling a substrate. The method of forming a light-emitting element by growing a separation layer and a light-emitting layer in this order on a first substrate, bonding the light-emitting layer onto a second substrate, and removing the separation layer to form the light-emitting layer on the second substrate, includes growing a plurality of groups each containing the separation layer and light-emitting layer on the first substrate; patterning the light-emitting layer existing as a uppermost layer into an island shape, and then bonding the light-emitting layer onto the second substrate, and etching the separation layer adjacent to the light-emitting layer patterned into the island shape to form the light-emitting layer patterned into the island shape on the second substrate.
摘要翻译：本发明的目的是提供一种以比常规成本低的成本形成发光元件的方法，与常规的基板再循环方法相比，可以抑制由于热变形引起的基板的劣化，并且还具有其效果与回收基材的方法相同。通过在第一基板上依次生长分离层和发光层来形成发光元件的方法，将发光层接合到第二基板上，并且去除分离层以形成发光包括在第一基板上生长各自包含分离层和发光层的多个基团; 将作为最上层存在的发光层图案化为岛状，然后将发光层接合到第二基板上，并且蚀刻与图案化为岛状的发光层相邻的分离层，以形成光在第二基板上图案化成岛状的发光层。

9. 发明申请

US20090003401A1 SURFACE EMITTING LASER AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：表面发射激光及其制造方法
公开(公告)号：US20090003401A1
公开(公告)日：2009-01-01
申请号：US12143337
申请日：2008-06-20
申请人： Yoshinobu Sekiguchi
发明人： Yoshinobu Sekiguchi
IPC分类号： H01S5/00 , H01L21/02
CPC分类号： H01S5/18394 , H01S5/0215 , H01S5/0216 , H01S5/0425 , H01S5/18311 , H01S2301/166
摘要： Provided is a surface emitting laser which can maintain a fundamental transverse mode to obtain higher power while higher-order transverse mode oscillations are suppressed, and a method of manufacturing the surface emitting laser. The surface emitting laser includes: an aperture portion to be a path for injecting a current to an active layer; a current confinement region provided in the vicinity of the aperture portion; and a current injection region which is provided on an opposite side to a light output side with respect to the active layer therebetween, in which a current injection path in the current injection region has a smaller diameter than the aperture portion.
摘要翻译：本发明提供一种表面发射激光器，其可以保持基本横模以获得更高功率，同时抑制高阶横模振荡，以及制造表面发射激光器的方法。表面发射激光器包括：作为将电流注入有源层的路径的开口部分; 设置在所述开口部附近的电流限制区域; 以及电流注入区域，其设置在相对于其间的有源层的与光输出侧相反的一侧，其中当前注入区域中的电流注入路径具有比孔部分更小的直径。

10. 发明授权

US07420839B2 Magnetization reversal method for applying a multi-directional external magnetic field to a perpendicular magnetoresistive film 有权
标题翻译：用于将多方向外部磁场施加到垂直磁阻膜的磁化反转方法
公开(公告)号：US07420839B2
公开(公告)日：2008-09-02
申请号：US11410705
申请日：2006-04-24
申请人： Takashi Ikeda , Yoshinobu Sekiguchi , Naoki Nishimura
发明人： Takashi Ikeda , Yoshinobu Sekiguchi , Naoki Nishimura
IPC分类号： G11C11/15
CPC分类号： H01L27/228 , B82Y10/00 , B82Y25/00 , G11C11/15 , G11C11/16 , H01F10/3254 , H01F10/3281 , H01F10/3286
摘要： A magnetization reversal method is disclosed in which an external magnetic field is applied to a magnetoresistive film requiring a strong magnetic film for reversal. A weak magnetic field is applied when magnetically coupled perpendicular magnetic films are used in which the magnetoresistive film has a structure wherein a nonmagnetic film is placed between magnetic films with an easy axis of magnetization along a perpendicular direction to a film plane, and in which said external magnetic field is comprised of magnetic fields from a plurality of directions including a direction of easy magnetization of the magnetic films.
摘要翻译：公开了一种磁化反转方法，其中外部磁场被施加到需要强磁性膜反转的磁阻膜上。当使用磁耦合垂直磁性膜时，施加弱磁场，其中磁阻膜具有这样一种结构，其中非磁性膜沿着与薄膜平面垂直的方向具有容易的磁化轴的磁性膜之间，其中所述外部磁场由包括磁性膜容易磁化的方向的多个方向的磁场构成。

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