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    • 3. 发明授权
    • Silicone-type coating resin solution
    • 硅胶型涂料树脂溶液
    • US4510283A
    • 1985-04-09
    • US560170
    • 1983-12-12
    • Shiro TakedaMinoru Nakajima
    • Shiro TakedaMinoru Nakajima
    • H01L21/768C08G77/44C09D183/04C09D183/10H01L21/312H01L23/522C08K5/07
    • C09D183/10C08G77/44
    • A silicone-type coating resin solution and a process for preparing the solution. This solution comprises 30 to 60 parts by weight of a hydrolytic condensation polymer of tetramethoxysilane or tetraethoxysilane (PDAS) having a weight average molecular weight of 1,000 to 6,000 and 70 to 40 parts by weight of a polysilsesquioxane prepolymer (PLOS) having a weight average molecular weight of 2,500 to 7,000 and in which each of 5 to 50 mole % of the organic groups attached directly to the silicon atoms is a phenyl group and the remaining organic groups are methyl, ethyl, or vinyl groups, these polymer components being dissolved in an organic solvent having a boiling point of not less than 110.degree. C. under a pressure of 760 mmHg. This solution is prepared by dissolving PDAS and PLOS in an organic solvent having a high boiling point and treating the resultant solution under a reduced pressure of not more than 5 mmHg.
    • 有机硅类涂料树脂溶液及其制备方法。 该溶液包含30至60重量份的重均分子量为1,000至6,000的四甲氧基硅烷或四乙氧基硅烷(PDAS)的水解缩聚物和70至40重量份的具有重均分子量的聚倍半硅氧烷预聚物(PLOS) 重量为2500〜7000,其中5〜50摩尔%直接与硅原子连接的有机基团为苯基,剩余的有机基团为甲基,乙基或乙烯基,这些聚合物成分溶于 在760mmHg的压力下沸点不低于110℃的有机溶剂。 该溶液通过将PDAS和PLOS溶解在具有高沸点的有机溶剂中并在不超过5mmHg的减压下处理所得溶液来制备。
    • 6. 发明授权
    • Mechanism for opening and closing an opening portion
    • 用于打开和关闭开口部分的机构
    • US08181820B2
    • 2012-05-22
    • US12597242
    • 2009-01-14
    • Shiro Takeda
    • Shiro Takeda
    • B65D43/16B65D43/26
    • A46B5/0033A45D40/264A46B7/023A46B2200/1046
    • A mechanism for opening and closing an opening portion is disclosed. The mechanism can simply and reliably open and close the opening portion without requiring a spring but using a simple mechanism and can stably maintain the closed state of the opening portion. When the opening portion is closed by a lid, with the head end side of the opening and closing member being protruded from the opening portion, the head end of the opening and closing member makes contact with the surface of the lid which faces the inner side of the opening portion, causing the lid to rotate about one end thereof which is rotatably supported by a rotation supporting shaft. This changes the state of the opening portion from the closed state to the opened state. When the head of the opening and closing member retracts into the opening portion from the state in which the opening and closing member is protruded from the opening portion, the protrusion of the opening and closing member will be made to engage the head end of a wound section of the lid, causing the lid to rotate about the one end of thereof which is rotatably supported by the rotation supporting shaft. This changes the state of the opening portion from the opened state to the closed state.
    • 公开了一种打开和关闭开口部分的机构。 该机构可以简单且可靠地打开和关闭开口部分而不需要弹簧,但是使用简单的机构并且可以稳定地保持开口部分的关闭状态。 当开口部被盖关闭时,开闭部件的头端侧从开口部突出,开闭部件的头端与盖的面向内侧的表面接触 的开口部分,使得盖绕其一端旋转,其由旋转支撑轴可旋转地支撑。 这将开口部分的状态从关闭状态改变为打开状态。 当打开和关闭构件的头部从开口部分从开口部分突出的状态缩回到开口部分中时,打开和关闭构件的突起将被接合到伤口的头端 从而导致盖绕其一端旋转,由旋转支撑轴可旋转地支撑。 这将开口部分的状态从打开状态改变到关闭状态。
    • 7. 发明申请
    • Gallium-containing light-emitting semiconductor device and method of fabrication
    • 含镓的发光半导体器件及其制造方法
    • US20050205886A1
    • 2005-09-22
    • US11135236
    • 2005-05-23
    • Hitoshi MurofushiShiro Takeda
    • Hitoshi MurofushiShiro Takeda
    • H01L21/18H01L21/22H01L29/22H01L33/00H01L33/20H01L33/38H01L33/40
    • H01L33/387H01L21/182H01L21/2215H01L33/0079H01L33/20H01L33/405
    • An LED comprising a light-generating semiconductor region having an active layer sandwiched between two confining layers of opposite conductivity types. A cathode is arranged centrally on one of the opposite major surfaces of the semiconductor region from which is emitted the light. An array of discrete gold regions are formed via transition metal regions on the other major surface of the semiconductor region at which is exposed one of the confining layers which is of n-type AlGaInP semiconductor material. The gold is thermally diffused into the confining layer via the transition metal regions at a temperature less than the eutectic point of gold and gallium, thereby creating an array of ohmic contact regions of alloyed or intermingled gold and gallium, which are less absorptive of light than their conventional counterparts, to a thickness of 20 to 1000 angstroms. After removing the transition metal regions and gold regions from the surface of the light-generating semiconductor region, a reflective layer of aluminum is formed so as to cover both the ohmic contact regions and the exposed surface portions of the AlGaInP confining layer. An electroconductive base-plate of doped silicon is then bonded to the reflective layer.
    • 一种LED,其包括具有夹在相反导电类型的两个限制层之间的活性层的发光半导体区域。 阴极被布置在半导体区域的相对的主表面之一的中心上,从其发射光。 通过在半导体区域的另一个主表面上的过渡金属区域形成离散金区域的阵列,其中露出n型AlGaInP半导体材料的约束层之一。 金在低于金和镓的共晶点的温度下通过过渡金属区域热扩散到约束层中,从而产生合金或混合的金和镓的欧姆接触区域阵列,其比光吸收更少 它们的常规对应物,厚度为20至1000埃。 在从发光半导体区域的表面除去过渡金属区域和金色区域之后,形成铝的反射层,以覆盖AlGaInP约束层的欧姆接触区域和露出的表面部分。 然后将掺杂硅的导电基板接合到反射层。