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    • 1. 发明申请
    • Gallium-containing light-emitting semiconductor device and method of fabrication
    • 含镓的发光半导体器件及其制造方法
    • US20050205886A1
    • 2005-09-22
    • US11135236
    • 2005-05-23
    • Hitoshi MurofushiShiro Takeda
    • Hitoshi MurofushiShiro Takeda
    • H01L21/18H01L21/22H01L29/22H01L33/00H01L33/20H01L33/38H01L33/40
    • H01L33/387H01L21/182H01L21/2215H01L33/0079H01L33/20H01L33/405
    • An LED comprising a light-generating semiconductor region having an active layer sandwiched between two confining layers of opposite conductivity types. A cathode is arranged centrally on one of the opposite major surfaces of the semiconductor region from which is emitted the light. An array of discrete gold regions are formed via transition metal regions on the other major surface of the semiconductor region at which is exposed one of the confining layers which is of n-type AlGaInP semiconductor material. The gold is thermally diffused into the confining layer via the transition metal regions at a temperature less than the eutectic point of gold and gallium, thereby creating an array of ohmic contact regions of alloyed or intermingled gold and gallium, which are less absorptive of light than their conventional counterparts, to a thickness of 20 to 1000 angstroms. After removing the transition metal regions and gold regions from the surface of the light-generating semiconductor region, a reflective layer of aluminum is formed so as to cover both the ohmic contact regions and the exposed surface portions of the AlGaInP confining layer. An electroconductive base-plate of doped silicon is then bonded to the reflective layer.
    • 一种LED,其包括具有夹在相反导电类型的两个限制层之间的活性层的发光半导体区域。 阴极被布置在半导体区域的相对的主表面之一的中心上,从其发射光。 通过在半导体区域的另一个主表面上的过渡金属区域形成离散金区域的阵列,其中露出n型AlGaInP半导体材料的约束层之一。 金在低于金和镓的共晶点的温度下通过过渡金属区域热扩散到约束层中,从而产生合金或混合的金和镓的欧姆接触区域阵列,其比光吸收更少 它们的常规对应物,厚度为20至1000埃。 在从发光半导体区域的表面除去过渡金属区域和金色区域之后,形成铝的反射层,以覆盖AlGaInP约束层的欧姆接触区域和露出的表面部分。 然后将掺杂硅的导电基板接合到反射层。
    • 2. 发明授权
    • Light-emitting semiconductor device and method of fabrication
    • 发光半导体器件及其制造方法
    • US07087933B2
    • 2006-08-08
    • US10987770
    • 2004-11-12
    • Shiro TakedaHitoshi Murofushi
    • Shiro TakedaHitoshi Murofushi
    • H01L29/22
    • H01L33/0079H01L21/42H01L33/46
    • A light emitting diode has a semiconductor region for production of light. The semiconductor region is a lamination of two complementary layers, an n-type semiconductor layer, an active layer, a p-type semiconductor layer, another complementary layer, and an ohmic contact layer, in that order from a first major surface of the semiconductor layer, from which the light is emitted, toward a second. A reflective metal layer covers the second major surface of the semiconductor region via a transparent layer for reflecting the light that has traveled through the transparent layer from the semiconductor region. The transparent layer serves to prevent the semiconductor region and the reflective layer from alloying by heat treatments during the manufacture of the LED.
    • 发光二极管具有用于产生光的半导体区域。 半导体区域是从半导体的第一主表面依次层叠两个互补层,n型半导体层,有源层,p型半导体层,另一互补层和欧姆接触层 光从其发射的层朝向第二层。 反射金属层经由透明层覆盖半导体区域的第二主表面,用于反射从半导体区域穿过透明层的光。 透明层用于防止半导体区域和反射层在制造LED期间通过热处理而合金化。
    • 4. 发明授权
    • Gallium-containing light-emitting semiconductor device and method of fabrication
    • 含镓的发光半导体器件及其制造方法
    • US07566576B2
    • 2009-07-28
    • US12049614
    • 2008-03-17
    • Hitoshi MurofushiShiro Takeda
    • Hitoshi MurofushiShiro Takeda
    • H01L21/00
    • H01L33/387H01L21/182H01L21/2215H01L33/0079H01L33/20H01L33/405
    • An LED comprising a light-generating semiconductor region having an active layer sandwiched between two confining layers of opposite conductivity types. A cathode is arranged centrally on one of the opposite major surfaces of the semiconductor region from which is emitted the light. An array of discrete gold regions are formed via transition metal regions on the other major surface of the semiconductor region at which is exposed one of the confining layers which is of n-type AlGaInP semiconductor material. The gold is thermally diffused into the confining layer via the transition metal regions at a temperature less than the eutectic point of gold and gallium, thereby creating an array of ohmic contact regions of alloyed or intermingled gold and gallium, which are less absorptive of light than their conventional counterparts, to a thickness of 20 to 1000 angstroms. After removing the transition metal regions and gold regions from the surface of the light-generating semiconductor region, a reflective layer of aluminum is formed so as to cover both the ohmic contact regions and the exposed surface portions of the AlGaInP confining layer. An electroconductive baseplate of doped silicon is then bonded to the reflective layer.
    • 一种LED,其包括具有夹在相反导电类型的两个限制层之间的活性层的发光半导体区域。 阴极被布置在半导体区域的相对的主表面之一的中心上,从其发射光。 通过在半导体区域的另一个主表面上的过渡金属区域形成离散金区域的阵列,其中露出n型AlGaInP半导体材料的约束层之一。 金在低于金和镓的共晶点的温度下通过过渡金属区域热扩散到约束层中,从而产生合金或混合的金和镓的欧姆接触区域阵列,其比光吸收更少 它们的常规对应物,厚度为20至1000埃。 在从发光半导体区域的表面除去过渡金属区域和金色区域之后,形成铝的反射层,以覆盖AlGaInP约束层的欧姆接触区域和暴露表面部分。 然后将掺杂硅的导电基板接合到反射层。
    • 5. 发明申请
    • GALLIUM-CONTAINING LIGHT-EMITTING SEMICONDUCTOR DEVICE AND METHOD OF FABRICATION
    • 含镓的发光半导体器件及其制造方法
    • US20080166828A1
    • 2008-07-10
    • US12049614
    • 2008-03-17
    • Hitoshi MurofushiShiro Takeda
    • Hitoshi MurofushiShiro Takeda
    • H01L33/00
    • H01L33/387H01L21/182H01L21/2215H01L33/0079H01L33/20H01L33/405
    • An LED comprising a light-generating semiconductor region having an active layer sandwiched between two confining layers of opposite conductivity types. A cathode is arranged centrally on one of the opposite major surfaces of the semiconductor region from which is emitted the light. An array of discrete gold regions are formed via transition metal regions on the other major surface of the semiconductor region at which is exposed one of the confining layers which is of n-type AlGaInP semiconductor material. The gold is thermally diffused into the confining layer via the transition metal regions at a temperature less than the eutectic point of gold and gallium, thereby creating an array of ohmic contact regions of alloyed or intermingled gold and gallium, which are less absorptive of light than their conventional counterparts, to a thickness of 20 to 1000 angstroms. After removing the transition metal regions and gold regions from the surface of the light-generating semiconductor region, a reflective layer of aluminum is formed so as to cover both the ohmic contact regions and the exposed surface portions of the AlGaInP confining layer. An electroconductive baseplate of doped silicon is then bonded to the reflective layer.
    • 一种LED,其包括具有夹在相反导电类型的两个限制层之间的活性层的发光半导体区域。 阴极被布置在半导体区域的相对的主表面之一的中心上,从其发射光。 通过在半导体区域的另一个主表面上的过渡金属区域形成离散金区域的阵列,其中露出n型AlGaInP半导体材料的约束层之一。 金在低于金和镓的共晶点的温度下通过过渡金属区域热扩散到约束层中,从而产生合金或混合的金和镓的欧姆接触区域阵列,其比光吸收更少 它们的常规对应物,厚度为20至1000埃。 在从发光半导体区域的表面除去过渡金属区域和金色区域之后,形成铝的反射层,以覆盖AlGaInP约束层的欧姆接触区域和露出的表面部分。 然后将掺杂硅的导电基板接合到反射层。
    • 7. 发明申请
    • Light-emitting semiconductor device and method of fabrication
    • 发光半导体器件及其制造方法
    • US20060001032A1
    • 2006-01-05
    • US11222369
    • 2005-09-08
    • Hitoshi MurofushiHidekazu AoyagiShiro TakedaYoshihiko Uchida
    • Hitoshi MurofushiHidekazu AoyagiShiro TakedaYoshihiko Uchida
    • H01L27/15H01L21/00
    • H01L33/405H01L33/44
    • An LED comprises a semiconductor region including an active layer for generating light. An anode is arranged centrally on one of the opposite major surfaces of the semiconductor region from which is emitted the light. A reflective metal layer is bonded to the other major surface of the light-generating semiconductor region via an ohmic contact layer. Sufficiently thin to permit the passage of light therethrough, the ohmic contact layer is formed in an open-worked pattern to leave exposed part of the second major surface of the semiconductor region. A transparent, open-worked anti-alloying layer is interposed between the light-generating semiconductor region and the reflective metal layer, covering that part of the second major surface of the light-generating semiconductor region which is left exposed by the ohmic contact layer. The anti-alloying layer prevents the light-generating semiconductor region and reflective metal layer from alloying during heat treatments conducted in the curse of LED manufacture. A greater percentage of the light from the light-generating semiconductor region is reflected by the reflective metal layer for emission from the first major surface of the light-generating semiconductor region than in the absence of the anti-alloying layer.
    • LED包括包括用于产生光的有源层的半导体区域。 阳极被布置在半导体区域的相对的主表面之一的中心上,从其发射光。 反射金属层经由欧姆接触层与发光半导体区域的另一个主表面接合。 足够薄以允许光通过其中,欧姆接触层以开放图案形成,以留下半导体区域的第二主表面的暴露部分。 在发光半导体区域和反射金属层之间插入透明的开放式抗合金层,覆盖由欧姆接触层露出的发光半导体区域的第二主表面的那部分。 防合金层在LED制造的诅咒中进行的热处理期间防止发光半导体区域和反射金属层的合金化。 来自发光半导体区域的较大百分比的光被来自发光半导体区域的第一主表面的反射金属层反射,而不是不存在抗合金化层。
    • 9. 发明授权
    • Light-emitting semiconductor device of improved efficiency
    • 发光半导体器件效率提高
    • US07498609B2
    • 2009-03-03
    • US11222369
    • 2005-09-08
    • Hitoshi MurofushiHidekazu AoyagiShiro TakedaYoshihiko Uchida
    • Hitoshi MurofushiHidekazu AoyagiShiro TakedaYoshihiko Uchida
    • H01L27/15
    • H01L33/405H01L33/44
    • An LED comprises a semiconductor region including an active layer for generating light. An anode is arranged centrally on one of the opposite major surfaces of the semiconductor region from which is emitted the light. A reflective metal layer is bonded to the other major surface of the light-generating semiconductor region via an ohmic contact layer. Sufficiently thin to permit the passage of light therethrough, the ohmic contact layer is formed in an open-worked pattern to leave exposed part of the second major surface of the semiconductor region. A transparent, open-worked anti-alloying layer is interposed between the light-generating semiconductor region and the reflective metal layer, covering that part of the second major surface of the light-generating semiconductor region which is left exposed by the ohmic contact layer. The anti-alloying layer prevents the light-generating semiconductor region and reflective metal layer from alloying during heat treatments conducted in the curse of LED manufacture. A greater percentage of the light from the light-generating semiconductor region is reflected by the reflective metal layer for emission from the first major surface of the light-generating semiconductor region than in the absence of the anti-alloying layer.
    • LED包括包括用于产生光的有源层的半导体区域。 阳极被布置在半导体区域的相对的主表面之一的中心上,从其发射光。 反射金属层经由欧姆接触层与发光半导体区域的另一个主表面接合。 足够薄以允许光通过其中,欧姆接触层以开放图案形成,以留下半导体区域的第二主表面的暴露部分。 在发光半导体区域和反射金属层之间插入透明的开放式抗合金层,覆盖由欧姆接触层露出的发光半导体区域的第二主表面的那部分。 防合金层在LED制造的诅咒中进行的热处理期间防止发光半导体区域和反射金属层的合金化。 来自发光半导体区域的较大百分比的光被来自发光半导体区域的第一主表面的反射金属层反射,而不是不存在抗合金化层。