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    • 9. 发明授权
    • Semiconductor device using a group III nitride-based semiconductor
    • 使用III族氮化物基半导体的半导体器件
    • US08674407B2
    • 2014-03-18
    • US12919640
    • 2009-03-12
    • Yuji AndoYasuhiro OkamotoKazuki OtaTakashi InoueTatsuo NakayamaHironobu Miyamoto
    • Yuji AndoYasuhiro OkamotoKazuki OtaTakashi InoueTatsuo NakayamaHironobu Miyamoto
    • H01L29/66
    • H01L29/7783H01L29/2003H01L29/4236H01L29/518H01L29/7785
    • The present invention provides a semiconductor device having such a structure formed by sequentially laminating a lower barrier layer composed of lattice-relaxed AlxGa1-xN (0≦x≦1), a channel layer composed of InyGa1-yN (0≦y≦1) with compressive strain and a contact layer composed of AlzGa1-zN (0≦z≦1), wherein a two-dimensional electron gas is produced in the vicinity of an interface of said InyGa1-yN channel layer with said AlzGa1-zN contact layer; a gate electrode is formed so as to be embedded in the recessed portion with intervention of an insulating film, which recessed portion is formed by removing a part of said AlzGa1-zN contact layer by etching it away until said InyGa1-yN channel layer is exposed; and, ohmic electrodes are formed on the AlzGa1-zN contact layer. Thus, the semiconductor device has superior uniformity and reproducibility of the threshold voltage while maintaining a low gate leakage current, and is also applicable to the enhancement mode type.
    • 本发明提供一种具有这样的结构的半导体器件,该半导体器件通过依次层叠由晶格弛豫的Al x Ga 1-x N(0 @ x @ 1)构成的下阻挡层,由InyGa1-yN(0 @ y @ 1) 具有压应变和由Al z Ga 1-z N(0 @ z @ 1)组成的接触层,其中在所述In y Ga 1-y N沟道层与所述Al z Ga 1-z N接触层的界面附近产生二维电子气; 通过介入绝缘膜形成嵌入在凹陷部分中的栅电极,该凹陷部分通过蚀刻除去所述AlzGa1-zN接触层的一部分而形成,直到所述In y Ga 1-y N沟道层暴露 ; 并且在AlzGa1-zN接触层上形成欧姆电极。 因此,半导体器件在保持低栅极漏电流的同时具有优异的阈值电压的均匀性和再现性,并且也适用于增强型。
    • 10. 发明授权
    • Vehicle seat
    • 车座
    • US08668225B2
    • 2014-03-11
    • US13701136
    • 2011-06-03
    • Jogen YamakiHisato OkuTakashi InoueTakuya HoriMasato MiyaguchiKazuyoshi Arata
    • Jogen YamakiHisato OkuTakashi InoueTakuya HoriMasato MiyaguchiKazuyoshi Arata
    • B60R21/207
    • B60N2/4235B60N2/4249B60N2/68B60N2/682B60N2/686B60N2/7011B60N2/7094B60N2/72B60R21/207
    • A vehicle seat includes: a seat back frame that is provided with a pair of side frame portions that are located on both left and right sides in the seat transverse direction; an outer-side load transmitting block that is located further to an outer side in the transverse direction of the seat back frame than the side frame portion of the seat back frame, and that transmits an impact load that is input from a side of the vehicle body to the seat back frame; a protruding portion that protrudes from a side surface of the side frame portion on the outer side in the transverse direction of the seat back frame towards the outer side in the transverse direction of the seat back frame; a side airbag apparatus that is located on a front surface of the protruding portion; and an engaging portion that is formed in the outer-side load transmitting block, and that receives the protruding portion. The protruding portion is formed in a box shape that has a supporting surface on a surface thereof that faces the side airbag apparatus.
    • 车辆座椅包括:座椅靠背框架,其设置有位于座椅横向方向上的左右两侧的一对侧框架部分; 位于座椅靠背框架的横向方向上比座椅靠背框架的侧框架部分更靠外侧的外侧载荷传递块,并且传递从车辆侧面输入的冲击载荷 身体到座椅靠背框架; 从座椅靠背框架的宽度方向的外侧的侧框架部的侧面朝向座椅靠背框架的宽度方向的外侧突出的突出部; 位于突出部的前表面上的侧面安全气囊装置; 以及形成在所述外侧负载传递块中并且接收所述突出部的接合部。 突出部形成为在与侧面安全气囊装置相对的表面上具有支撑面的盒状。