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    • 5. 发明申请
    • Method for producincg silicon wafer and silicon wafer
    • 生产硅晶片和硅晶片的方法
    • US20060174820A1
    • 2006-08-10
    • US10565108
    • 2004-07-12
    • Ken Yoshizawa
    • Ken Yoshizawa
    • C30B15/00C30B13/00C30B21/06C30B21/04C30B27/02C30B28/08C30B28/10C30B30/04
    • C30B29/06C30B13/00C30B13/34
    • The present invention are a method for producing a silicon wafer having a crystal orientation from a silicon single crystal ingot grown by a Floating Zone method (FZ method), wherein, at least, an FZ silicon single crystal ingot is grown by being made to be dislocation-free by Dash Necking method using a seed crystal having its crystal axis inclined at a specified angle from a crystal orientation , and the grown FZ silicon single crystal ingot is sliced at the just angle of a crystal orientation to produce a silicon wafer having a crystal orientation , and a silicon wafer produced by the method. Thereby, there are provided a method for producing a silicon wafer having a crystal orientation from a silicon single crystal ingot made to be dislocation-free at a high success rate by using Dash Necking method by FZ method, and a silicon wafer having an crystal orientation .
    • 本发明是一种通过浮选法生长的硅单晶锭(FZ法)制造具有晶体取向<110>的硅晶片的方法,其中至少通过以下步骤生长FZ硅单晶锭: 通过使用晶体从晶体取向<110>倾斜指定角度的晶种的Dash Necking方法使其无位错,并且将生长的FZ硅单晶锭以晶体取向< 制造晶体取向<110>的硅晶片和通过该方法制造的硅晶片。 因此,提供了一种通过使用FZ方法的Dash Necking方法从以高成功率制成无位错的硅单晶锭制造具有晶体取向<110>的硅晶片的方法,以及具有 晶体取向<110>。
    • 7. 发明授权
    • Method for producing silicon wafer and silicon wafer
    • 硅晶片和硅晶片的制造方法
    • US07361219B2
    • 2008-04-22
    • US10565108
    • 2004-07-12
    • Ken Yoshizawa
    • Ken Yoshizawa
    • C30B21/04C30B13/34
    • C30B29/06C30B13/00C30B13/34
    • The present invention are a method for producing a silicon wafer having a crystal orientation from a silicon single crystal ingot grown by a Floating Zone method (FZ method), wherein, at least, an FZ silicon single crystal ingot is grown by being made to be dislocation-free by Dash Necking method using a seed crystal having its crystal axis inclined at a specified angle from a crystal orientation , and the grown FZ silicon single crystal ingot is sliced at the just angle of a crystal orientation to produce a silicon wafer having a crystal orientation , and a silicon wafer produced by the method. Thereby, there are provided a method for producing a silicon wafer having a crystal orientation from a silicon single crystal ingot made to be dislocation-free at a high success rate by using Dash Necking method by FZ method, and a silicon wafer having an crystal orientation .
    • 本发明是一种通过浮选法生长的硅单晶锭(FZ法)制造具有晶体取向<110>的硅晶片的方法,其中至少通过以下步骤生长FZ硅单晶锭: 通过使用晶体从晶体取向<110>倾斜指定角度的晶种的Dash Necking方法使其无位错,并且将生长的FZ硅单晶锭以晶体取向< 制造晶体取向<110>的硅晶片和通过该方法制造的硅晶片。 因此,提供了一种通过使用FZ方法的Dash Necking方法从以高成功率制成无位错的硅单晶锭制造具有晶体取向<110>的硅晶片的方法,以及具有 晶体取向<110>。
    • 8. 发明授权
    • High-frequency induction heater and method of producing semiconductor
single crystal using the same
    • 高频感应加热器及使用其制造半导体单晶的方法
    • US5792258A
    • 1998-08-11
    • US593698
    • 1996-01-29
    • Masanori KimuraKen YoshizawaTeruaki FukamiHirotoshi Yamagishi
    • Masanori KimuraKen YoshizawaTeruaki FukamiHirotoshi Yamagishi
    • C30B13/20C30B29/06H01L21/208H05B6/30H05B6/36
    • H05B6/30C30B13/20H05B6/362Y10T117/1088
    • A high-frequency induction heater for use in the growth of a semiconductor single crystal by the FZ method, including a plurality of high-frequency induction heating coils disposed in concentric juxtaposed relation to each other and each having a pair of power supply terminals provided for supplying a high-frequency current to the associated heating coil, with the power supply terminals of one of the heating coils being disposed in a space defined between opposite ends of an adjacent heating coil disposed outside the one heating coil, wherein a pair of electrically conductive members is attached to the pair of power supply terminals, respectively, of at least an innermost one of the heating coils so as to cover a space defined between the power supply terminals of the innermost heating coil. With the induction heater thus constructed, the so-called "pulsation", i.e., microscopic resistivity fluctuations and the macroscopic resistivity distribution in the diametrical and growth directions can be improved at one time.
    • 一种用于通过FZ方法生长半导体单晶的高频感应加热器,包括多个彼此并置设置的高频感应加热线圈,每个高频感应加热线圈具有一对电源端子, 向相关联的加热线圈提供高频电流,其中一个加热线圈的电源端子设置在限定在设置在一个加热线圈外侧的相邻加热线圈的相对端之间的空间中,其中一对导电 至少最内侧加热线圈中的一对电源端子分别连接在一起,以覆盖在最内侧的加热线圈的电源端子之间限定的空间。 利用如此构造的感应加热器,可以一次性地改善所谓的“脉动”,即直径和生长方向的微观电阻率波动和宏观电阻率分布。