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1. 发明申请

US20080203531A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080203531A1
公开(公告)日：2008-08-28
申请号：US12024140
申请日：2008-02-01
申请人： Toshinori Imai , Tsuyoshi Fujiwara , Hiroshi Ashihara , Akira Ootaguro , Yoshihiro Kawasaki
发明人： Toshinori Imai , Tsuyoshi Fujiwara , Hiroshi Ashihara , Akira Ootaguro , Yoshihiro Kawasaki
IPC分类号： H01L27/06 , H01L21/02
CPC分类号： H01L23/5223 , H01L28/75 , H01L2924/0002 , H01L2924/00
摘要： In this invention, the film thicknesses of an upper barrier film of a lower electrode of a capacitive element and an upper barrier film of a metallic interconnect layer formed in the same layer as this is made thicker than the film thicknesses of upper barrier films of other metallic interconnect layers. Moreover, in this invention, the film thickness of the upper barrier film of the lower electrode of the capacitive element is controlled to be 110 nm or more, more preferably, 160 nm or more. A decrease in the dielectric voltage of the capacitive dielectric film due to cracks in the upper barrier film does not occur and the deposition temperature of the capacitive dielectric film can be made higher, so that a semiconductor device having a MIM capacitor with high performance and high capacitance can be achieved, where the dielectric voltage of the capacitive dielectric film is improved.
摘要翻译：在本发明中，电容元件的下电极的上阻挡膜和与其形成的相同层中的金属互连层的上阻挡膜的膜厚比其他的上阻挡膜的膜厚更厚金属互连层。此外，在本发明中，电容元件的下电极的上阻挡膜的膜厚控制在110nm以上，更优选为160nm以上。不会发生由于上阻挡膜中的裂纹引起的电容电介质膜的电介质电压的降低，并且可以使电容电介质膜的沉积温度更高，使得具有高性能和高的MIM电容器的半导体器件可以实现电容，其中电容电介质膜的介电电压得到改善。

2. 发明授权

US07981761B2 Method of manufacturing semiconductor device having MIM capacitor 有权
标题翻译：具有MIM电容器的半导体器件的制造方法
公开(公告)号：US07981761B2
公开(公告)日：2011-07-19
申请号：US12750402
申请日：2010-03-30
申请人： Toshinori Imai , Tsuyoshi Fujiwara , Hiroshi Ashihara , Akira Ootaguro , Yoshihiro Kawasaki
发明人： Toshinori Imai , Tsuyoshi Fujiwara , Hiroshi Ashihara , Akira Ootaguro , Yoshihiro Kawasaki
IPC分类号： H01L21/20 , H01L21/8242 , H01L21/4763 , H01L21/70 , H01L21/02 , H01L23/48 , H01L23/52 , H01L23/28
CPC分类号： H01L23/5223 , H01L28/75 , H01L2924/0002 , H01L2924/00
摘要： In this invention, the film thicknesses of an upper barrier film of a lower electrode of a capacitive element and an upper barrier film of a metallic interconnect layer formed in the same layer as this is made thicker than the film thicknesses of upper barrier films of other metallic interconnect layers. Moreover, in this invention, the film thickness of the upper barrier film of the lower electrode of the capacitive element is controlled to be 110 nm or more, more preferably, 160 nm or more. A decrease in the dielectric voltage of the capacitive dielectric film due to cracks in the upper barrier film does not occur and the deposition temperature of the capacitive dielectric film can be made higher, so that a semiconductor device having a MIM capacitor with high performance and high capacitance can be achieved, where the dielectric voltage of the capacitive dielectric film is improved.
摘要翻译：在本发明中，电容元件的下电极的上阻挡膜和与其形成的相同层中的金属互连层的上阻挡膜的膜厚比其他的上阻挡膜的膜厚更厚金属互连层。此外，在本发明中，电容元件的下电极的上阻挡膜的膜厚控制在110nm以上，更优选为160nm以上。不会发生由于上阻挡膜中的裂纹引起的电容电介质膜的电介质电压的降低，并且可以使电容电介质膜的沉积温度更高，使得具有高性能和高的MIM电容器的半导体器件可以实现电容，其中电容电介质膜的介电电压得到改善。

3. 发明申请

US20100181647A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100181647A1
公开(公告)日：2010-07-22
申请号：US12750402
申请日：2010-03-30
申请人： Toshinori IMAI , Tsuyoshi Fujiwara , Hiroshi Ashihara , Akira Ootaguro , Yoshihiro Kawasaki
发明人： Toshinori IMAI , Tsuyoshi Fujiwara , Hiroshi Ashihara , Akira Ootaguro , Yoshihiro Kawasaki
IPC分类号： H01L29/92 , H01L21/02
CPC分类号： H01L23/5223 , H01L28/75 , H01L2924/0002 , H01L2924/00
摘要： In this invention, the film thicknesses of an upper barrier film of a lower electrode of a capacitive element and an upper barrier film of a metallic interconnect layer formed in the same layer as this is made thicker than the film thicknesses of upper barrier films of other metallic interconnect layers. Moreover, in this invention, the film thickness of the upper barrier film of the lower electrode of the capacitive element is controlled to be 110 nm or more, more preferably, 160 nm or more. A decrease in the dielectric voltage of the capacitive dielectric film due to cracks in the upper barrier film does not occur and the deposition temperature of the capacitive dielectric film can be made higher, so that a semiconductor device having a MIM capacitor with high performance and high capacitance can be achieved, where the dielectric voltage of the capacitive dielectric film is improved.
摘要翻译：在本发明中，电容元件的下电极的上阻挡膜和与其形成的相同层中的金属互连层的上阻挡膜的膜厚比其他的上阻挡膜的膜厚更厚金属互连层。此外，在本发明中，电容元件的下电极的上阻挡膜的膜厚控制在110nm以上，更优选为160nm以上。不会发生由于上阻挡膜中的裂纹引起的电容电介质膜的电介质电压的降低，并且可以使电容电介质膜的沉积温度更高，使得具有高性能和高的MIM电容器的半导体器件可以实现电容，其中电容电介质膜的介电电压得到改善。

4. 发明申请

US20060289917A1 Semiconductor device, RF-IC and manufacturing method of the same 审中-公开
标题翻译：半导体器件，RF-IC及其制造方法相同
公开(公告)号：US20060289917A1
公开(公告)日：2006-12-28
申请号：US11473229
申请日：2006-06-23
申请人： Tsuyoshi Fujiwara , Toshinori Imai , Takeshi Saikawa , Yoshihiro Kawasaki , Mitsuhiro Toya , Shunji Mori , Yoshiyuki Okabe
发明人： Tsuyoshi Fujiwara , Toshinori Imai , Takeshi Saikawa , Yoshihiro Kawasaki , Mitsuhiro Toya , Shunji Mori , Yoshiyuki Okabe
IPC分类号： H01L29/94
CPC分类号： H01L28/91 , H01L27/10852 , H01L28/87
摘要： Provided is a technology capable of reducing parasitic capacitance of a capacitor while reducing the space occupied by the capacitor. A stacked structure is obtained by forming, over a capacitor composed of a lower electrode, a capacitor insulating film and an intermediate electrode, another capacitor composed of the intermediate electrode, another capacitor insulating film and an upper electrode. Since the intermediate electrode has a step difference, each of the distance between the intermediate electrode and lower electrode and the distance between the intermediate electrode and upper electrode in a region other than the capacitor formation region becomes greater than that in the capacitor formation region. For example, the lower electrode is brought into direct contact with the capacitor insulating film in the capacitor formation region, while the lower electrode is not brought into direct contact with the capacitor insulating film in the region other than the capacitor formation region.
摘要翻译：提供了一种能够减小电容器的寄生电容同时减小电容器所占空间的技术。通过在由下电极构成的电容器，电容绝缘膜和中间电极上形成电容器，由中间电极，另一电容绝缘膜和上电极构成的另一电容器形成堆叠结构。由于中间电极具有台阶差，所以在电容器形成区域以外的区域中，中间电极和下部电极之间的距离以及中间电极和上部电极之间的距离变得比电容器形成区域的大。例如，下电极与电容器形成区域中的电容绝缘膜直接接触，而在电容器形成区域以外的区域中，下电极不与电容器绝缘膜直接接触。

5. 发明授权

US09219585B2 Radio base station apparatus, pilot transmission method thereof, and a terminal apparatus 有权
标题翻译：无线基站装置，导频发送方法以及终端装置
公开(公告)号：US09219585B2
公开(公告)日：2015-12-22
申请号：US12425614
申请日：2009-04-17
申请人： Yoshihiro Kawasaki
发明人： Yoshihiro Kawasaki
IPC分类号： H04L5/00 , H04W52/02
CPC分类号： H04L5/005 , H04L5/0089 , H04W52/0206 , Y02D70/24 , Y02D70/25
摘要： In conditions of low data traffic, such as during the night, when transmitting pilots in a downlink radio transmission zone, sub frames are divided into (1) first sub frames that transmit common pilots over a whole transmission band, and (2) second sub frames that transmit common pilots over a specified narrow band of a whole transmission band, where first sub frames are transmitted at a specified period, and second sub frames are transmitted for period of time except the specified period.
摘要翻译：在诸如夜间的低数据业务的情况下，当在下行链路无线电传输区域中发送导频时，子帧被划分为（1）在整个传输频带上传送公共导频的第一子帧，以及（2）第二子帧在整个传输频带的特定窄带上发送公共导频的帧，其中以指定周期发送第一子帧，并且在指定周期之外的一段时间内发送第二子帧。

6. 发明授权

US09161369B2 Base station and interference reduction method in base station 有权
标题翻译：基站中的基站和干扰减少方法
公开(公告)号：US09161369B2
公开(公告)日：2015-10-13
申请号：US12774078
申请日：2010-05-05
申请人： Yoshihiro Kawasaki
发明人： Yoshihiro Kawasaki
IPC分类号： H04B15/00 , H04W72/12 , H04W52/24 , H04W92/20
CPC分类号： H04W72/1231 , H04W52/243 , H04W52/247 , H04W72/1278 , H04W72/1289 , H04W92/20
摘要： A radio communication system including mobile terminals and plural base stations each of which communicates with mobile terminals existing in a subordinate cell. Each of the base stations includes an interference power measurement portion which measures a total interference power received from mobile terminals existing in adjacent cells; an interference reduction request portion which issues a request to reduce interference to base stations of the adjacent cells based on the total interference power; and a control portion which notifies mobile terminals existing in a subordinate cell of transmission power control information when the request to reduce interference is received from a base station of an adjacent cell, so as to reduce the interference. Each of the mobile terminals includes a reception portion which receives the transmission power control information from the base station that is requested to reduce the interference from the base station of the adjacent cell.
摘要翻译：一种无线电通信系统，包括移动终端和多个基站，每个基站与存在于下级小区中的移动终端进行通信。每个基站包括干扰功率测量部分，其测量从相邻小区中存在的移动终端接收的总干扰功率; 干扰减少请求部分，其基于所述总干扰功率发出对相邻小区的基站的干扰的请求; 以及控制部，其在从相邻小区的基站接收到减少干扰的请求时，通知发送功率控制信息的下位单元中存在的移动终端，以减少干扰。每个移动终端包括接收部分，其从基站接收被请求减少来自相邻小区的基站的干扰的发射功率控制信息。

7. 发明授权

US08923872B2 Radio communication apparatus, radio communication system and radio communication method 有权
标题翻译：无线通信装置，无线通信系统和无线通信方式
公开(公告)号：US08923872B2
公开(公告)日：2014-12-30
申请号：US13567515
申请日：2012-08-06
申请人： Yoshiaki Ohta , Yoshihiro Kawasaki , Yoshiharu Tajima , Yoshinori Tanaka , Katsumasa Sugiyama
发明人： Yoshiaki Ohta , Yoshihiro Kawasaki , Yoshiharu Tajima , Yoshinori Tanaka , Katsumasa Sugiyama
IPC分类号： H04W72/00 , H04W74/02 , H04W72/04 , H04W16/14 , H04W74/08
CPC分类号： H04W72/042 , H04W16/14 , H04W74/02 , H04W74/0833 , H04W76/18
摘要： A radio communication apparatus selectively performs one of a first transmission method using for data transmission a radio resource which is assigned by a radio communication apparatus and which can be used on a contention basis by a plurality of radio communication apparatus and a second transmission method involving random access. Alternatively, the radio communication apparatus selectively performs one of the first transmission method and a third transmission method involving a request made to the radio communication apparatus to assign a radio resource for data transmission.
摘要翻译：无线电通信装置选择性地执行用于数据传输的第一传输方法之一，无线电资源由无线电通信装置分配并且可以由多个无线电通信装置在竞争的基础上使用，并且第二传输方法涉及随机访问。或者，无线电通信装置选择性地执行第一传输方法和第三传输方法之一，该方法涉及对无线电通信装置的请求，以分配用于数据传输的无线电资源。

8. 发明授权

US08902837B2 Method for random access in wireless communication system, wireless communication system, wireless terminal, and base station unit 有权
标题翻译：无线通信系统，无线通信系统，无线终端和基站单元随机接入方法
公开(公告)号：US08902837B2
公开(公告)日：2014-12-02
申请号：US13528519
申请日：2012-06-20
申请人： Yoshiaki Ohta , Yoshiharu Tajima , Kazuhisa Obuchi , Yoshihiro Kawasaki
发明人： Yoshiaki Ohta , Yoshiharu Tajima , Kazuhisa Obuchi , Yoshihiro Kawasaki
IPC分类号： H04W74/08 , H04W72/04 , H04W74/00
CPC分类号： H04W74/08 , H04W74/008 , H04W74/0833
摘要： Random access in a wireless communication system including a base station and a wireless terminal, whereby at the wireless terminal, performing first random access scheme using a first random access preamble or second random access scheme using a second random access preamble which is received from the base station.
摘要翻译：在包括基站和无线终端的无线通信系统中的随机接入，由此在无线终端，使用从基站接收的第二随机接入前导码，使用第一随机接入前导码或第二随机接入方案来执行第一随机接入方案站。

9. 发明授权

US08902836B2 Method for random access in wireless communication system, wireless communication system, wireless terminal, and base station unit 有权
标题翻译：无线通信系统，无线通信系统，无线终端和基站单元随机接入方法
公开(公告)号：US08902836B2
公开(公告)日：2014-12-02
申请号：US13527133
申请日：2012-06-19
申请人： Yoshiaki Ohta , Yoshiharu Tajima , Kazuhisa Obuchi , Yoshihiro Kawasaki
发明人： Yoshiaki Ohta , Yoshiharu Tajima , Kazuhisa Obuchi , Yoshihiro Kawasaki
IPC分类号： H04W72/04 , H04W74/08 , H04W74/00
CPC分类号： H04W74/08 , H04W74/008 , H04W74/0833
摘要： A system and method for random access in a wireless communication system including a base station and a wireless terminal, whereby at the wireless terminal, selecting, as information to perform random access using the information, first information used for first random access or second information used for second random access.
摘要翻译：一种用于在包括基站和无线终端的无线通信系统中进行随机接入的系统和方法，由此在无线终端，选择作为使用该信息进行随机接入的信息，用于第一随机接入或第二信息的第一信息用于第二次随机访问。

10. 发明授权

US08750233B2 Communications apparatus and communications system using multicarrier transmission mode 有权
标题翻译：通信装置和通信系统采用多载波传输模式
公开(公告)号：US08750233B2
公开(公告)日：2014-06-10
申请号：US13566559
申请日：2012-08-03
申请人： Takayoshi Ode , Yoshihiro Kawasaki , Kazuo Kawabata
发明人： Takayoshi Ode , Yoshihiro Kawasaki , Kazuo Kawabata
IPC分类号： H04W72/04 , H04W74/08 , H04L5/00
CPC分类号： H04W72/0453 , H04L5/00 , H04L5/0007 , H04L27/261 , H04W28/26 , H04W48/08 , H04W72/00 , H04W72/04 , H04W72/0406 , H04W72/044 , H04W88/08
摘要： A communications system for exchange of information between communications apparatuses by a multicarrier transmission mode using a plurality of subcarriers, the communication system includes a transmission data generator configured to generate frequency band information indicating which frequency band is to be used for transmission of data information between said communication apparatuses and a transmitter configured to transmit the frequency band information by using a specific frequency band which is set from among a plurality of frequency band assigned to the communications system, and to transmit data information by using at least one frequency band set from among said plurality of frequency bands and a receiver configured to receive the frequency band information by using the specific frequency band, whereby one or more of said frequency band is assigned consecutive with said specific frequency band along a frequency axis.
摘要翻译：一种用于使用多个子载波的多载波传输模式在通信设备之间交换信息的通信系统，所述通信系统包括发送数据发生器，其被配置为生成指示哪个频带用于在所述多个子载波之间传输数据信息的频带信息通信装置和发送器，被配置为通过使用从分配给通信系统的多个频带中设置的特定频带来发送频带信息，并且通过使用从所述通信系统中设置的至少一个频带来发送数据信息多个频带和被配置为通过使用所述特定频带来接收所述频带信息的接收机，由此所述频带中的一个或多个沿着频率轴与所述特定频带连续地分配。

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