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1. 发明授权

US06595576B2 Housing for member disposed at vehicle exterior 有权
标题翻译：车辆外壳处理的房屋
公开(公告)号：US06595576B2
公开(公告)日：2003-07-22
申请号：US09824243
申请日：2001-04-03
申请人： Toshinobu Mizutani , Kiyohide Imaeda , Yoshio Ohashi , Masakazu Aoki , Masaaki Ito , Wataru Horio , Masahide Inayama , Tadayoshi Kato
发明人： Toshinobu Mizutani , Kiyohide Imaeda , Yoshio Ohashi , Masakazu Aoki , Masaaki Ito , Wataru Horio , Masahide Inayama , Tadayoshi Kato
IPC分类号： B60J120
CPC分类号： B60R1/06
摘要： A housing for a member disposed at a vehicle exterior is formed by assembling a plurality of parts substantially in a vehicle longitudinal direction. At a matching portion when the plurality of parts are assembled together substantially in the vehicle longitudinal direction, a housing outer side end portion of a matching surface substantially at a vehicle frontward side is displaced further outward than a housing outer side end portion of a matching surface substantially at a vehicle rearward side. Or, the housing outer side end portion of the matching surface substantially at the vehicle rearward side may have a curved surface or a flat surface.
摘要翻译：通过组装基本上在车辆纵向上的多个部件来形成用于设置在车辆外部的构件的壳体。在多个部件基本上在车辆前后方向组装的情况下，在匹配部分，大致在车辆前方的匹配表面的壳体外侧端部比匹配表面的壳体外侧端部更向外侧移位基本上在车辆后方。或者，匹配表面的大致在车辆后侧的壳体外侧端部可以具有弯曲表面或平坦表面。

2. 发明申请

US20050141114A1 Vehicle mirror device, method for manufacturing mirror device for vehicle, and vehicle 有权
标题翻译：车辆镜面装置，车辆用镜面装置及车辆的制造方法
公开(公告)号：US20050141114A1
公开(公告)日：2005-06-30
申请号：US10508419
申请日：2003-03-19
申请人： Toshinobu Mizutani , Masakazu Iwatsuki , Masakazu Aoki , Masaaki Itou , Yasunobu Okatsu
发明人： Toshinobu Mizutani , Masakazu Iwatsuki , Masakazu Aoki , Masaaki Itou , Yasunobu Okatsu
IPC分类号： B60R1/06 , G02B1/10 , G02B7/182
CPC分类号： B60R1/06
摘要： In a vehicle door mirror device (10), an outer side surface (20B), with respect to a vehicle, of a projection (20) of a door mirror stay (16) is made to be flat. Further, an angle of the outer side surface (20B) with respect to a front-rear direction of the vehicle, inward or outward with respect to the vehicle, is not more than 2 degrees. Therefore, wind arriving at the outer side surface (20B) flows rearward with respect to the vehicle with fluctuation thereof being suppressed, and its flow is straightened. Furthermore, a radius of curvature of a corner portion (20E) at an outer rear side, with respect to the vehicle, of the projection (20) is not more than 15 mm. Therefore, wind arriving at the outer side surface (20B) of the projection (20) is suppressed from flowing along the corner portion (20E), and its flow is straightened. Thus, wind noise performance of the door mirror stay (16) can be improved. In addition, wind drawn in by the door mirror stay (16) toward a mirror and toward a side window can be reduced, and impairment of visibility can be suppressed.
摘要翻译：在车辆后视镜装置（10）中，使车门后视镜（16）的突起（20）相对于车辆的外侧表面（20B）平坦。此外，外侧面（20B）相对于车辆的前后方向相对于车辆的内侧或外侧的角度不大于2度。因此，到达外侧表面（20B）的风相对于车辆后方流动，其波动被抑制，并且其流动被拉直。此外，突出部20的相对于车辆的后侧的角部的曲率半径不大于15mm。因此，能够抑制到达突起20的外侧面（20B）的风沿着角部（20E）流动，使其流动变得平坦。因此，可以提高门镜支撑件（16）的风噪声性能。此外，可以减小由车门后视镜（16）朝向镜子朝向侧视窗吸入的风，并且可以抑制可见度的损伤。

3. 发明授权

US06648294B2 Mirror device for a vehicle 有权
公开(公告)号：US06648294B2
公开(公告)日：2003-11-18
申请号：US09881056
申请日：2001-06-15
申请人： Hitoshi Kato , Fuminori Teraoka , Hiroki Iwasa , Shigeki Yoshida , Masakazu Aoki , Toshinobu Mizutani
发明人： Hitoshi Kato , Fuminori Teraoka , Hiroki Iwasa , Shigeki Yoshida , Masakazu Aoki , Toshinobu Mizutani
IPC分类号： A47G124
CPC分类号： B60R1/06
摘要： In a door mirror device for a vehicle, an retracting device supports a mirror by coupling a mirror angle adjusting device for holding the mirror with a holding portion of a frame and coupling the retracting device fixed to a vehicle body with a supporting portion of the frame. The frame is provided with the holding portion and the supporting portion formed by drawing a frame-forming metal plate which has been formed by pressing, and a portion connecting the holding portion and the supporting portion is provided with a difference in level. Thus, the frame can have sufficient rigidity.

4. 发明授权

US07070288B2 Vehicle mirror device, method for manufacturing mirror device for vehicle, and vehicle 有权
标题翻译：车辆镜面装置，车辆用镜面装置及车辆的制造方法
公开(公告)号：US07070288B2
公开(公告)日：2006-07-04
申请号：US10508419
申请日：2003-03-19
申请人： Toshinobu Mizutani , Masakazu Iwatsuki , Masakazu Aoki , Masaaki Itou , Yasunobu Okatsu
发明人： Toshinobu Mizutani , Masakazu Iwatsuki , Masakazu Aoki , Masaaki Itou , Yasunobu Okatsu
IPC分类号： G02B7/182 , B60R1/06
CPC分类号： B60R1/06
摘要： In a vehicle door mirror device (10), an outer side surface (20B), with respect to a vehicle, of a projection (20) of a door mirror stay (16) is made to be flat. Further, an angle of the outer side surface (20B) with respect to a front-rear direction of the vehicle, inward or outward with respect to the vehicle, is not more than 2 degrees. Therefore, wind arriving at the outer side surface (20B) flows rearward with respect to the vehicle with fluctuation thereof being suppressed, and its flow is straightened. Furthermore, a radius of curvature of a corner portion (20E) at an outer rear side, with respect to the vehicle, of the projection (20) is not more than 15 mm. Therefore, wind arriving at the outer side surface (20B) of the projection (20) is suppressed from flowing along the corner portion (20E), and its flow is straightened. Thus, wind noise performance of the door mirror stay (16) can be improved. In addition, wind drawn in by the door mirror stay (16) toward a mirror and toward a side window can be reduced, and impairment of visibility can be suppressed.
摘要翻译：在车辆后视镜装置（10）中，将车门后视镜（16）的突起（20）相对于车辆的外侧表面（20B）制成平坦的。此外，外侧面（20B）相对于车辆的前后方向相对于车辆的内侧或外侧的角度不大于2度。因此，到达外侧表面（20B）的风相对于车辆后方流动，其波动被抑制，并且其流动被拉直。此外，突出部20的相对于车辆的后侧的角部的曲率半径不大于15mm。因此，能够抑制到达突起20的外侧面（20B）的风沿着角部（20E）流动，使其流动变得平坦。因此，可以提高门镜支撑件（16）的风噪声性能。此外，可以减小由车门后视镜（16）朝向镜子朝向侧视窗吸入的风，并且可以抑制可见度的损伤。

5. 发明授权

US07750668B2 Semiconductor integrated circuit device having power reduction mechanism 失效
标题翻译：具有降压机构的半导体集成电路装置
公开(公告)号：US07750668B2
公开(公告)日：2010-07-06
申请号：US11979100
申请日：2007-10-31
申请人： Masashi Horiguchi , Kunio Uchiyama , Kiyoo Itoh , Takeshi Sakata , Masakazu Aoki , Takayuki Kawahara
发明人： Masashi Horiguchi , Kunio Uchiyama , Kiyoo Itoh , Takeshi Sakata , Masakazu Aoki , Takayuki Kawahara
IPC分类号： H03K19/003 , G05F1/10 , G06F1/32
CPC分类号： H01L27/0207 , G06F1/3203 , G11C5/14 , H01L27/0218 , H03K3/356113 , H03K19/0013 , H03K19/0016 , H03K19/01721
摘要： A semiconductor integrated circuit device is composed of logic gates each provided with at least two MOS transistors. The logic gates are connected to a first potential point and a second potential point. The semiconductor integrated circuit device includes a current control device connected between the logic gate and the first potential point and/or between the logic gate and the second potential point for controlling a value of a current flowing in the logic gate depending on an operating state of the logic gate. The circuit can be used in devices that cycle in operation between high and low power consumption modes, such as microprocessors that have both an operation mode and a low power back-up or sleep mode used for power reduction.
摘要翻译：半导体集成电路器件由各自设置有至少两个MOS晶体管的逻辑门组成。逻辑门连接到第一电势点和第二电位点。半导体集成电路装置包括连接在逻辑门与第一电位点之间和/或逻辑门与第二电势点之间的电流控制装置，用于根据操作状态控制在逻辑门中流动的电流的值逻辑门。该电路可用于在高功耗模式和低功耗模式之间循环运行的器件，例如具有用于功率降低的操作模式和低功率备用或睡眠模式的微处理器。

6. 发明授权

US07391998B2 Developing apparatus 失效
标题翻译：开发设备
公开(公告)号：US07391998B2
公开(公告)日：2008-06-24
申请号：US11353077
申请日：2006-02-14
申请人： Masakazu Aoki , Akinobu Okuda , Hironobu Kinoshita , Hideki Yasuda , Kazumasa Hayashi
发明人： Masakazu Aoki , Akinobu Okuda , Hironobu Kinoshita , Hideki Yasuda , Kazumasa Hayashi
IPC分类号： G03G15/08
CPC分类号： G03G15/0893 , G03G15/0877 , G03G2215/0833
摘要： The present invention provides a developing apparatus to be provided in a quick start up electrophotographic image forming apparatus that can efficiently prevent generation of unevenness by a screw pitch in a short period of time. The developing apparatus rotates a developer transporting screw so as to transport and supply a developer to a developer bearing member, and develops a latent image formed on an image bearing member by the developer. The developer transporting screw includes a vane winding around a rotation shaft in a spiral form. A vane surface on other side of a developer transport direction of the vane includes two planes having different angles with a rotational center line of the rotation shaft. Relationships of θ2
摘要翻译：本发明提供一种显影装置，其设置在快速启动电子照相图像形成装置中，其能够在短时间内有效地防止螺距的产生。显影装置旋转显影剂输送螺杆，以便将显影剂输送并供应到显影剂承载部件，并且通过显影剂显影形成在图像承载部件上的潜像。显影剂输送螺杆包括以螺旋形式围绕旋转轴缠绕的叶片。在叶片的显影剂输送方向的另一侧的叶片表面包括与旋转轴的旋转中心线具有不同角度的两个平面。满足θ2θ和10°<θ2 <= 60°的关系，其中θ1表示与旋转中心线之间的距离较长的平面之间的角度; 和旋转中心线，θ2表示与旋转中心线具有较短距离的面之间的角度; 和旋转中心线。

7. 发明申请

US20050023615A1 Semiconductor element and semiconductor memory device using the same 失效
标题翻译：半导体元件和使用其的半导体存储器件
公开(公告)号：US20050023615A1
公开(公告)日：2005-02-03
申请号：US10929424
申请日：2004-08-31
申请人： Kazuo Yano , Tomoyuki Ishii , Takashi Hashimoto , Koichi Seki , Masakazu Aoki , Takeshi Sakata , Yoshinobu Nakagome , Kan Takeuchi
发明人： Kazuo Yano , Tomoyuki Ishii , Takashi Hashimoto , Koichi Seki , Masakazu Aoki , Takeshi Sakata , Yoshinobu Nakagome , Kan Takeuchi
IPC分类号： H01L21/8247 , G11C11/22 , G11C11/404 , G11C16/02 , G11C16/04 , G11C16/28 , H01L21/28 , H01L21/336 , H01L27/01 , H01L27/115 , H01L29/423 , H01L29/51 , H01L29/66 , H01L29/76 , H01L29/788 , H01L29/792 , H01L29/94 , H01L31/036 , H01L31/062 , H01L31/112 , H01L31/113
CPC分类号： B82Y10/00 , G11C11/22 , G11C11/404 , G11C16/02 , G11C16/0466 , G11C16/10 , G11C16/28 , G11C2216/06 , G11C2216/08 , H01L21/28273 , H01L21/8221 , H01L27/0688 , H01L27/105 , H01L27/115 , H01L27/11526 , H01L27/11546 , H01L27/11551 , H01L27/1203 , H01L29/42328 , H01L29/513 , H01L29/66825 , H01L29/7613 , H01L29/785 , H01L29/7888
摘要： A field-effect semiconductor element implemented with a fewer number of elements and a reduced area and capable of storing data by itself without need for cooling at a cryogenic temperature, and a memory device employing the same. Gate-channel capacitance is set so small that whether or not a trap captures one electron or hole can definitely and distinctively be detected in terms of changes of a current of the semiconductor FET element. By detecting a change in a threshold voltage of the semiconductor element brought about by trapping of electron or hole in the trap, data storage can be realized at a room temperature.
摘要翻译：一种场效应半导体元件，其具有较少数量的元件和减小的面积，并能够自身存储数据，而不需要在低温下进行冷却;以及采用该半导体元件的存储器件。栅极沟道电容被设置得如此小，以致捕获捕获一个电子或空穴是否可以根据半导体FET元件的电流的变化来明确且明显地被检测。通过检测通过在陷阱中捕获电子或空穴而导致的半导体元件的阈值电压的变化，可以在室温下实现数据存储。

8. 发明授权

US06611458B2 Semiconductor integrated circuit device 有权
标题翻译：半导体集成电路器件
公开(公告)号：US06611458B2
公开(公告)日：2003-08-26
申请号：US09780393
申请日：2001-02-12
申请人： Koichiro Ishibashi , Shoji Shukuri , Kazumasa Yanagisawa , Junichi Nishimoto , Masanao Yamaoka , Masakazu Aoki
发明人： Koichiro Ishibashi , Shoji Shukuri , Kazumasa Yanagisawa , Junichi Nishimoto , Masanao Yamaoka , Masakazu Aoki
IPC分类号： G11C1606
CPC分类号： G11C16/0441 , B82Y10/00 , C04B28/02 , C04B2103/0097 , C04B2111/00017 , C04B2111/00456 , C04B2111/00517 , C04B2111/2092 , G11C16/04 , G11C29/12 , G11C29/789 , G11C29/848 , G11C2216/10 , H01L22/22 , H01L23/53228 , H01L23/544 , H01L24/48 , H01L24/49 , H01L27/0211 , H01L27/105 , H01L27/10897 , H01L2223/5444 , H01L2223/54473 , H01L2224/05554 , H01L2224/05599 , H01L2224/48091 , H01L2224/48472 , H01L2224/49175 , H01L2224/85399 , H01L2924/00014 , H01L2924/10162 , H01L2924/12042 , H01L2924/13091 , H01L2924/14 , H01L2924/19041 , C04B14/04 , C04B14/06 , C04B14/14 , C04B14/16 , C04B20/008 , C04B24/00 , H01L2924/00012 , H01L2924/00 , H01L2224/45015 , H01L2924/207 , H01L2224/45099
摘要： To reduce cost of defect redundancy and trimming in a semiconductor integrated circuit having multiple layer wirings and copper wirings, address for salvaging defect of a memory cell array in a semiconductor is stored by using a nonvolatile memory element constituting a floating electrode by a first layer of polysilicon, or the nonvolatile memory element is programmed in testing the semiconductor integrated circuit, thereby, a special process is not needed in forming the nonvolatile memory element, that is, the nonvolatile memory element can be formed in a process of forming CMOS device and apparatus of laser beam for programming is not needed since the programming is carried out in testing, time necessary for programming can be shortened and therefore, testing cost can be reduced.
摘要翻译：为了降低具有多层布线和铜布线的半导体集成电路中的缺陷冗余和修整的成本，通过使用构成浮置电极的非易失性存储元件，通过第一层多晶硅或非易失性存储元件在对半导体集成电路进行测试时被编程，从而在形成非易失性存储元件时不需要特殊工艺，也就是说，可以在形成CMOS器件和器件的过程中形成非易失性存储元件用于编程的激光束不需要，因为在测试中进行编程，可以缩短编程所需的时间，因此可以降低测试成本。

9. 发明授权

US06175251B1 Semiconductor integrated circuit device having power reduction 有权
标题翻译：具有功率降低的半导体集成电路器件
公开(公告)号：US06175251B1
公开(公告)日：2001-01-16
申请号：US09291957
申请日：1999-04-15
申请人： Masashi Horiguchi , Kunio Uchiyama , Kiyoo Itoh , Takeshi Sakata , Masakazu Aoki , Takayuki Kawahara
发明人： Masashi Horiguchi , Kunio Uchiyama , Kiyoo Itoh , Takeshi Sakata , Masakazu Aoki , Takayuki Kawahara
IPC分类号： H03K190948
CPC分类号： H01L27/0207 , G06F1/3203 , G11C5/14 , H01L27/0218 , H03K3/356113 , H03K19/0013 , H03K19/0016 , H03K19/01721
摘要： A semiconductor integrated circuit device is composed of logic gates each provided with at least two MOS transistors. The logic gates are connected to a first potential point and a second potential point. The semiconductor integrated circuit device includes a current control device connected between the logic gate and the first potential point and/or between the logic gate and the second potential point for controlling a value of a current flowing in the logic gate depending on an operating state of the logic gate. The circuit can be used in devices that cycle in operation between high and low power consumption modes, such as microprocessors that have both an operation mode and a low power back-up or sleep mode used for power reduction.
摘要翻译：半导体集成电路器件由各自设置有至少两个MOS晶体管的逻辑门组成。逻辑门连接到第一电势点和第二电位点。半导体集成电路装置包括连接在逻辑门与第一电位点之间和/或逻辑门与第二电势点之间的电流控制装置，用于根据操作状态控制在逻辑门中流动的电流的值逻辑门。该电路可用于在高功耗模式和低功耗模式之间循环运行的器件，例如具有用于功率降低的操作模式和低功率备用或睡眠模式的微处理器。

10. 发明授权

US5926430A Semiconductor integrated circuit device and method of activating the same 失效
标题翻译：半导体集成电路器件及其激活方法
公开(公告)号：US5926430A
公开(公告)日：1999-07-20
申请号：US985425
申请日：1997-12-05
申请人： Hiromasa Noda , Masakazu Aoki , Youji Idei , Kazuhiko Kajigaya , Osamu Nagashima , Kiyoo Itoh , Masashi Horiguchi , Takeshi Sakata
发明人： Hiromasa Noda , Masakazu Aoki , Youji Idei , Kazuhiko Kajigaya , Osamu Nagashima , Kiyoo Itoh , Masashi Horiguchi , Takeshi Sakata
IPC分类号： G11C11/407 , G11C5/14 , G11C11/4074 , H03K19/00 , H03K17/16
CPC分类号： G11C5/14 , G11C11/4074 , G11C5/147 , H03K19/0016
摘要： A dynamic RAM is divided into an input circuit block responsive to an input signal supplied from an external terminal, inclusive of an operation start signal, an internal circuit block activated in response to the signal inputted from the input circuit block, and an output circuit block for outputting a signal outputted from the internal circuit block to an external terminal. A plurality of switch MOSFETs are provided in parallel between a power line for applying an operating voltage supplied from an external terminal and an internal power line for a first circuit portion in the internal circuit block, which does not need a storage operation upon reaching its non-operating state. Further, the switch MOSFETs are stepwise turned on in response to controls signals produced by delaying a start signal supplied through the input circuit block in turn, so as to perform the supply of each operating voltage.
摘要翻译：动态RAM被分成响应于从外部端子提供的输入信号的输入电路块，包括操作开始信号，响应于从输入电路块输入的信号而被激活的内部电路块，以及输出电路块用于将从内部电路块输出的信号输出到外部端子。在用于施加从外部端子提供的工作电压的电力线和用于内部电路块中的第一电路部分的内部电力线的并行设置多个开关MOSFET，其在达到其非电压时不需要存储操作操作状态。此外，响应于通过延迟通过输入电路块提供的启动信号而产生的控制信号，开关MOSFET逐步导通，以便执行每个工作电压的供应。

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