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    • 9. 发明授权
    • Process for fabricating piezoelectric element
    • 压电元件制造工艺
    • US08006357B2
    • 2011-08-30
    • US11813551
    • 2006-02-15
    • Yuki NakamuraYuji MurashimaMasahiro YasumiKazuki Komaki
    • Yuki NakamuraYuji MurashimaMasahiro YasumiKazuki Komaki
    • H01L41/22H04R17/00B21D53/76B23P17/00
    • H01L41/257H01L41/332Y10T29/42Y10T29/49401
    • In a production method of a piezoelectric element, an unneeded electric field is prevented from being applied to a piezoelectric thin film layer during the production process, resulting in a high performance piezoelectric element production method. The production method includes a first process for depositing an under electrode layer, a piezoelectric thin film layer and an upper electrode layer successively on a substrate such that the under electrode layer and the upper electrode layer form a short-circuit, a second process, after the first process, for etching including dry etching, the second process commenced while the under electrode layer and the upper electrode layer are short-circuited, a third process, after the second process, for polarizing by applying a voltage across the under electrode layer and the upper electrode layer, a fourth process, after the third process, for individualizing each piezoelectric element.
    • 在压电元件的制造方法中,在制造工序中,不需要的电场被防止施加于压电薄膜层,从而形成高性能的压电元件的制造方法。 该制造方法包括:在基板上依次沉积下电极层,压电薄膜层和上电极层的第一工艺,使得下电极层和上电极层形成短路,第二工序后 第一工艺,用于蚀刻包括干蚀刻,第二工艺在下电极层和上电极层短路的同时开始;第三工序,在第二工艺之后,通过施加电压跨越下电极层和 上电极层,第四工序,第三工序后,用于使各压电元件个体化。
    • 10. 发明申请
    • PROCESS FOR FABRICATING PIEZOELECTRIC ELEMENT
    • 制造压电元件的工艺
    • US20100125988A1
    • 2010-05-27
    • US11813551
    • 2006-02-15
    • Yuki NakamuraYuji MurashimaMasahiro YasumiKazuki Komaki
    • Yuki NakamuraYuji MurashimaMasahiro YasumiKazuki Komaki
    • H01L41/22
    • H01L41/257H01L41/332Y10T29/42Y10T29/49401
    • A method for fabricating a piezoelectric element capable of ensuring high piezoelectric characteristics by preventing generation of unnecessary electric field in a piezoelectric thin film layer during the fabrication process. The method for fabricating a piezoelectric element comprises a first step for depositing a lower electrode layer, a piezoelectric thin film layer and an upper electrode layer sequentially on a substrate, a second step for performing etching including dry etching, a third step for performing polarization by applying a voltage between the lower electrode layer and the upper electrode layer, and a fourth step for segmenting into individual piezoelectric elements wherein the lower electrode layer and the upper electrode layer are held in short circuit state at least when dry etching is performed.
    • 一种制造压电元件的方法,其能够通过在制造过程中防止在压电薄膜层中产生不必要的电场而确保高的压电特性。 制造压电元件的方法包括:第一步骤,用于在衬底上依次沉积下电极层,压电薄膜层和上电极层;第二步骤,用于执行包括干蚀刻的蚀刻;第三步骤,用于通过 在下电极层和上电极层之间施加电压,以及第四步骤,用于分割成各个压电元件,其中至少在进行干蚀刻时,下电极层和上电极层保持在短路状态。