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1. 发明申请

US20120082941A1 MANUFACTURING METHOD OF DISPLAY DEVICE 有权
标题翻译：显示装置的制造方法
公开(公告)号：US20120082941A1
公开(公告)日：2012-04-05
申请号：US13251353
申请日：2011-10-03
申请人： Toshimasa Ishigaki , Fumio Takahashi , Toshiki Kaneko
发明人： Toshimasa Ishigaki , Fumio Takahashi , Toshiki Kaneko
IPC分类号： G03F7/20
CPC分类号： G03F7/0392 , G03F7/40
摘要： An organic passivation film having a high transmittance and capable of setting a taper angle of a through hole within a predetermined range in a liquid crystal display device. A pixel electrode and a source electrode of a TFT are connected by way of a through hole formed in an organic passivation film. The organic passivation film having high productivity, high transmittance, and a predetermined taper angle θ of a through hole can be formed by using a chemical amplification photosensitive resin composition comprising, as a base material, an acrylic resin having a molecular weight of 4,000 to 20,000 and containing 1 to 6 wt % of a photoacid generator as the material for the organic passivation film, performing exposure and development for forming a through hole, and then performing post exposure, prebaking, and baking under appropriate conditions.
摘要翻译：一种具有高透射率并且能够将通孔的锥角设定在液晶显示装置内的预定范围内的有机钝化膜。 TFT的像素电极和源电极通过形成在有机钝化膜中的通孔连接。有机钝化膜具有高生产率，高透射率和预定的锥角度; 可以通过使用化学增幅感光性树脂组合物形成化学增幅感光性树脂组合物，其包含作为基材的分子量为4,000〜20,000的丙烯酸树脂，含有1〜6重量％的光酸产生剂作为有机物质钝化膜，进行曝光和显影以形成通孔，然后在合适的条件下进行后曝光，预烘烤和烘烤。

2. 发明授权

US08652766B2 Manufacturing method of display device 有权
标题翻译：显示装置的制造方法
公开(公告)号：US08652766B2
公开(公告)日：2014-02-18
申请号：US13251353
申请日：2011-10-03
申请人： Toshimasa Ishigaki , Fumio Takahashi , Toshiki Kaneko
发明人： Toshimasa Ishigaki , Fumio Takahashi , Toshiki Kaneko
IPC分类号： G03F1/00 , G03F7/00
CPC分类号： G03F7/0392 , G03F7/40
摘要： An organic passivation film having a high transmittance and capable of setting a taper angle of a through hole within a predetermined range in a liquid crystal display device. A pixel electrode and a source electrode of a TFT are connected by way of a through hole formed in an organic passivation film. The organic passivation film having high productivity, high transmittance, and a predetermined taper angle θ of a through hole can be formed by using a chemical amplification photosensitive resin composition comprising, as a base material, an acrylic resin having a molecular weight of 4,000 to 20,000 and containing 1 to 6 wt % of a photoacid generator as the material for the organic passivation film, performing exposure and development for forming a through hole, and then performing post exposure, prebaking, and baking under appropriate conditions.
摘要翻译：一种具有高透射率并且能够将通孔的锥角设定在液晶显示装置内的预定范围内的有机钝化膜。 TFT的像素电极和源电极通过形成在有机钝化膜中的通孔连接。可以通过使用化学放大型感光性树脂组合物形成具有高生产率，高透射率和预定锥形角度的有机钝化膜，该化学增幅感光性树脂组合物包含分子量为4000〜20,000的丙烯酸树脂作为基材并含有1至6重量％的光酸产生剂作为有机钝化膜的材料，进行用于形成通孔的曝光和显影，然后在合适的条件下进行后曝光，预烘烤和烘烤。

3. 发明授权

US08873006B2 Liquid crystal display device and manufacturing method thereof 有权
标题翻译：液晶显示装置及其制造方法
公开(公告)号：US08873006B2
公开(公告)日：2014-10-28
申请号：US13407137
申请日：2012-02-28
申请人： Noboru Kunimatsu , Masaki Matsumori , Hidehiro Sonoda , Yasushi Tomioka , Toshiki Kaneko
发明人： Noboru Kunimatsu , Masaki Matsumori , Hidehiro Sonoda , Yasushi Tomioka , Toshiki Kaneko
IPC分类号： G02F1/1337 , G02F1/1339 , G02F1/1333
CPC分类号： G02F1/1337 , G02F1/1333 , G02F1/133345 , G02F1/133723 , G02F1/13378 , G02F1/133788 , G02F1/1339 , G02F1/13394 , G02F1/136286 , G02F1/1368
摘要： The present invention prevents the shaving of an alignment film caused by a columnar spacer in a liquid crystal display device of an IPS method using photo-alignment. A plinth higher than a pixel electrode is formed at a part where a columnar spacer formed over a counter substrate touches a TFT substrate. When an alignment film of a double-layered structure is applied over the pixel electrode and the plinth, the thickness of the alignment film over the plinth reduces by a leveling effect. When photo-alignment is applied in the state, a photodegraded upper alignment film over the plinth disappears and a lower alignment film having a high mechanical strength remains. As a result, it is possible to prevent the shaving of the alignment film.
摘要翻译：本发明防止了使用光取向的IPS方法的液晶显示装置中的柱状间隔物引起的取向膜的刮削。在对置基板上形成的柱状间隔件与TFT基板接触的部分，形成比像素电极高的底座。当在像素电极和底座上施加双层结构的取向膜时，底座上的取向膜的厚度减小了平整效应。当在该状态下进行光对准时，在底座上的光降解的上取向膜消失，并且残留有机械强度较高的下取向膜。结果，可以防止取向膜的刮削。

4. 发明授权

US08377765B2 Manufacturing method of liquid crystal display device 有权
标题翻译：液晶显示装置的制造方法
公开(公告)号：US08377765B2
公开(公告)日：2013-02-19
申请号：US13067281
申请日：2011-05-20
申请人： Hideo Tanabe , Masaru Takabatake , Toshiki Kaneko , Atsushi Hasegawa , Hiroko Sehata
发明人： Hideo Tanabe , Masaru Takabatake , Toshiki Kaneko , Atsushi Hasegawa , Hiroko Sehata
IPC分类号： H01L21/00
CPC分类号： G02F1/133345 , G02F1/133305 , G02F1/133504 , G02F1/133555 , G02F1/134363 , G02F1/136213 , G02F1/136227 , G02F1/1368 , G02F2001/13685 , H01L27/124 , H01L27/1248 , H01L29/78675
摘要： The present invention provides a liquid crystal display device having a large holding capacitance in the inside of a pixel. A liquid crystal display device includes a first substrate, a second substrate arranged to face the first substrate in an opposed manner, and liquid crystal sandwiched between the first substrate and the second substrate. The first substrate includes a video signal line, a pixel electrode, a thin film transistor having a first electrode thereof connected to the video signal line and a second electrode thereof connected to the pixel electrode, a first silicon nitride film formed above the second electrode, an organic insulation film formed above the first silicon nitride film, a capacitance electrode formed above the organic insulation film, and a second silicon nitride film formed above the capacitance electrode and below the pixel electrode. The second silicon nitride film is a film which is formed at a temperature lower than a forming temperature of the first silicon nitride film. The first silicon nitride film and the second silicon nitride film form a contact hole therein by etching both of the first silicon nitride film and the second silicon nitride film collectively by dry etching. The second electrode and the pixel electrode are connected to each other via the contact hole. A potential different from a potential applied to the pixel electrode is applied to the capacitance electrode, and a holding capacitance is formed by the pixel electrode, the second silicon nitride film and the capacitance electrode.
摘要翻译：本发明提供一种在像素内部具有大的保持电容的液晶显示装置。液晶显示装置包括第一基板，以相对的方式与第一基板相对地布置的第二基板和夹在第一基板和第二基板之间的液晶。第一基板包括视频信号线，像素电极，具有连接到视频信号线的第一电极的薄膜晶体管和连接到像素电极的第二电极，形成在第二电极上方的第一氮化硅膜，形成在第一氮化硅膜上方的有机绝缘膜，形成在有机绝缘膜上方的电容电极和形成在电容电极上方和像素电极下方的第二氮化硅膜。第二氮化硅膜是在低于第一氮化硅膜的形成温度的温度下形成的膜。第一氮化硅膜和第二氮化硅膜通过干法蚀刻同时蚀刻第一氮化硅膜和第二氮化硅膜两者而形成接触孔。第二电极和像素电极经由接触孔相互连接。将施加到像素电极的电位不同的电位施加到电容电极，并且由像素电极，第二氮化硅膜和电容电极形成保持电容。

5. 发明申请

US20120299028A1 MANUFACTURING METHOD FOR LIQUID CRYSTAL DISPLAY DEVICE 有权
标题翻译：液晶显示装置的制造方法
公开(公告)号：US20120299028A1
公开(公告)日：2012-11-29
申请号：US13568672
申请日：2012-08-07
申请人： Hideo TANABE , Masaru Takabatake , Toshiki Kaneko , Atsushi Hasegawa , Hiroko Sehata
发明人： Hideo TANABE , Masaru Takabatake , Toshiki Kaneko , Atsushi Hasegawa , Hiroko Sehata
IPC分类号： H01L33/62
CPC分类号： G02F1/133345 , G02F1/133305 , G02F1/133504 , G02F1/133555 , G02F1/134363 , G02F1/136213 , G02F1/136227 , G02F1/1368 , G02F2001/13685 , H01L27/124 , H01L27/1248 , H01L29/78675
摘要： A LCD device having a large pixel holding capacitance includes opposedly facing first and second substrates, and liquid crystal between them. The first substrate includes a video signal line, a pixel electrode, a thin film transistor having a first electrode connected to the video signal line and a second electrode connected to the pixel electrode, a first silicon nitride film formed above the second electrode, an organic insulation film above the first silicon nitride film, a capacitance electrode above the organic insulation film, and a second silicon nitride film above the capacitance electrode and below the pixel electrode. A contact hole etched in both the first and second silicon nitride films connects the second electrode and the pixel electrode to each other. A holding capacitance is formed by the pixel electrode, the second silicon nitride film and the capacitance electrode.
摘要翻译：具有大像素保持电容的LCD装置包括相对的第一和第二基板以及它们之间的液晶。第一基板包括视频信号线，像素电极，具有连接到视频信号线的第一电极的薄膜晶体管和连接到像素电极的第二电极，形成在第二电极上方的第一氮化硅膜，有机物第一氮化硅膜上方的绝缘膜，有机绝缘膜上方的电容电极，以及电容电极上方和像素电极下方的第二氮化硅膜。在第一和第二氮化硅膜中蚀刻的接触孔将第二电极和像素电极彼此连接。保持电容由像素电极，第二氮化硅膜和电容电极形成。

6. 发明申请

US20110227083A1 Manufacturing method of liquid crystal display device 有权
公开(公告)号：US20110227083A1
公开(公告)日：2011-09-22
申请号：US13067281
申请日：2011-05-20
申请人： Hideo Tanabe , Masaru Takabatake , Toshiki Kaneko , Atsushi Hasegawa , Hiroko Sehata
发明人： Hideo Tanabe , Masaru Takabatake , Toshiki Kaneko , Atsushi Hasegawa , Hiroko Sehata
IPC分类号： H01L33/16
CPC分类号： G02F1/133345 , G02F1/133305 , G02F1/133504 , G02F1/133555 , G02F1/134363 , G02F1/136213 , G02F1/136227 , G02F1/1368 , G02F2001/13685 , H01L27/124 , H01L27/1248 , H01L29/78675
摘要： The present invention provides a liquid crystal display device having a large holding capacitance in the inside of a pixel. A liquid crystal display device includes a first substrate, a second substrate arranged to face the first substrate in an opposed manner, and liquid crystal sandwiched between the first substrate and the second substrate. The first substrate includes a video signal line, a pixel electrode, a thin film transistor having a first electrode thereof connected to the video signal line and a second electrode thereof connected to the pixel electrode, a first silicon nitride film formed above the second electrode, an organic insulation film formed above the first silicon nitride film, a capacitance electrode formed above the organic insulation film, and a second silicon nitride film formed above the capacitance electrode and below the pixel electrode. The second silicon nitride film is a film which is formed at a temperature lower than a forming temperature of the first silicon nitride film. The first silicon nitride film and the second silicon nitride film form a contact hole therein by etching both of the first silicon nitride film and the second silicon nitride film collectively by dry etching. The second electrode and the pixel electrode are connected to each other via the contact hole. A potential different from a potential applied to the pixel electrode is applied to the capacitance electrode, and a holding capacitance is formed by the pixel electrode, the second silicon nitride film and the capacitance electrode.

7. 发明授权

US07289181B2 Liquid crystal device 有权
标题翻译：液晶装置
公开(公告)号：US07289181B2
公开(公告)日：2007-10-30
申请号：US11516155
申请日：2006-09-05
申请人： Toshiki Kaneko , Kazumi Fujii , Kikuo Ono
发明人： Toshiki Kaneko , Kazumi Fujii , Kikuo Ono
IPC分类号： G02F1/1343 , G02F1/136
CPC分类号： G02F1/134363 , G02F1/136286 , G02F2001/13629 , G02F2001/136295 , G02F2201/123 , G02F2203/01
摘要： An interconnecting structure and a pixel structure suited to large-sized screens are formed. A counter line/electrode is formed on a TFT substrate, and the counter line/electrode is made of a stacked structure film in which a layer made of aluminum or an alloy essentially containing aluminum is covered with a high-melting point metal film, and a transparent conductive film which covers the stacked structure film.
摘要翻译：形成适合于大尺寸屏幕的互连结构和像素结构。反向线/电极形成在TFT基板上，对向线/电极由叠层结构膜制成，其中由铝或基本上含有铝的合金构成的层被高熔点金属膜覆盖，并且覆盖层叠结构膜的透明导电膜。

8. 发明申请

US20070092661A1 Liquid crystal display device and dielectric film usable in the liquid crystal display device 有权
标题翻译：可用于液晶显示装置的液晶显示装置和电介质膜
公开(公告)号：US20070092661A1
公开(公告)日：2007-04-26
申请号：US11583882
申请日：2006-10-20
申请人： Daisuke Ryuzaki , Kazuyoshi Torii , Mutsuko Hatano , Daisuke Sonoda , Toshiki Kaneko
发明人： Daisuke Ryuzaki , Kazuyoshi Torii , Mutsuko Hatano , Daisuke Sonoda , Toshiki Kaneko
IPC分类号： C09K19/00
CPC分类号： G02F1/1362 , G02F1/133345 , G02F2202/02 , H01L21/02126 , H01L21/02222 , H01L21/02282 , H01L21/3122 , H01L21/31633 , H01L21/3185 , Y10T428/10
摘要： The present invention provides a liquid crystal display device with high image visibility at low power consumption and produced at low cost by using an interlayer dielectric film, which has low dielectric constant, high heat-resistant property, high optical transmissivity, high film thickness and high flattening property produced at low cost. An organic siloxane dielectric film is used as an interlayer dielectric film of the liquid crystal display device. A ratio of nitrogen content to silicon content (Ni content/Si content) in the interlayer dielectric film is controlled to 0.04 or more in the element ratio. The limiting film thickness to suppress and limit the cracking caused by the thickening of the interlayer dielectric film is set to 1.5 μm or more.
摘要翻译：本发明提供一种低功耗的高图像可见度的液晶显示装置，通过使用具有低介电常数，高耐热性，高透光率，高膜厚和高的层间绝缘膜以低成本生产的液晶显示装置以低成本生产的扁平性。使用有机硅氧烷介电膜作为液晶显示装置的层间电介质膜。层间电介质膜中的氮含量与硅含量（Ni含量/ Si含量）的比例以元素比控制在0.04以上。抑制和限制由层间电介质膜的增厚引起的裂纹的限制膜厚设定为1.5μm以上。

9. 发明申请

US20060006392A1 Display device 有权
标题翻译：显示设备
公开(公告)号：US20060006392A1
公开(公告)日：2006-01-12
申请号：US11214794
申请日：2005-08-31
申请人： Daisuke Sonoda , Toshiki Kaneko
发明人： Daisuke Sonoda , Toshiki Kaneko
IPC分类号： H01L29/04
CPC分类号： H01L27/12 , G02F1/13454 , H01L27/124 , H01L27/1288 , H01L27/3244
摘要： A display device has C-MOS p-Si TFTs which enable high integration by reducing spaces for P-MOS TFTs and N-MOS TFTs in a driving circuit or the like thereof. A self-aligned C-MOS process is adopted, which uses a half tone mask as an exposure mask for manufacturing the C-MOS p-Si TFTs mounted on the display device. With the use of the half tone mask, the alignment or positioning at a bonding portion between a P-MOS portion and an N-MOS portion becomes unnecessary, and, hence, the number of photolithography steps can be reduced and high integration of C-MOS TFT circuits can be realized.
摘要翻译：显示装置具有通过减少驱动电路等中的P-MOS TFT和N-MOS TFT的空间来实现高集成度的C-MOS p-Si TFT。采用自对准C-MOS工艺，其使用半色调掩模作为用于制造安装在显示装置上的C-MOS p-Si TFT的曝光掩模。通过使用半色调掩模，不需要在P-MOS部分和N-MOS部分之间的接合部分处的对准或定位，因此可以减少光刻步骤的数量，并且C- 可以实现MOS TFT电路。

10. 发明申请

US20050250273A1 Display device and manufacturing method of the same 有权
公开(公告)号：US20050250273A1
公开(公告)日：2005-11-10
申请号：US11180658
申请日：2005-07-14
申请人： Yuichi Harano , Jun Gotoh , Toshiki Kaneko , Masanao Yamamoto
发明人： Yuichi Harano , Jun Gotoh , Toshiki Kaneko , Masanao Yamamoto
IPC分类号： G02F1/1368 , G09F9/30 , H01L21/28 , H01L21/285 , H01L21/3205 , H01L21/336 , H01L21/768 , H01L21/77 , H01L23/52 , H01L29/417 , H01L29/45 , H01L29/786
CPC分类号： H01L21/28568 , G03G15/0131 , G03G15/1685 , G03G2215/0141 , H01L21/76843 , H01L21/76849 , H01L21/76856 , H01L27/124 , H01L29/458 , H01L29/66757 , H01L29/78603
摘要： The present invention prevents the diffusion of an aluminum element into a polysilicon layer in a heating step when an aluminum-based conductive layer is used in a source/drain electrode which is in contact with low-temperature polysilicon whereby the occurrence of defective display can be obviated. An aluminum-based conductive layer is used in a source/drain electrode and a barrier layer made of molybdenum or a molybdenum alloy layer is formed between the aluminum-based conductive layer and a polysilicon layer. Further, a molybdenum oxide nitride film formed by the rapid heat treatment (rapid heat annealing) in a nitrogen atmosphere is formed over a surface of the molybdenum or the molybdenum alloy which constitutes the barrier layer.

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