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1. 发明申请

US20050152430A1 Laser device 失效
标题翻译：激光设备
公开(公告)号：US20050152430A1
公开(公告)日：2005-07-14
申请号：US11023419
申请日：2004-12-29
申请人： Toshikazu Onishi , Kazutoshi Onozawa , Shinji Yoshida , Daisuke Ueda
发明人： Toshikazu Onishi , Kazutoshi Onozawa , Shinji Yoshida , Daisuke Ueda
IPC分类号： H01S3/105 , G01N21/84 , H01S3/08 , H01S5/068 , H01S5/10 , H01S5/183
CPC分类号： H01S5/18394 , H01S5/1046 , H01S5/18319 , H01S5/1835
摘要： According to the present invention, a first p-side electrode 7A made of metal which is provided with regularly arranged holes 10 having a diameter smaller than a laser oscillation wavelength and a second p-side electrode 7B arranged around the periphery of the first p-type electrode 7A are used as a p-side mirror of a surface-emitting laser. Light in a resonator formed of a p-side electrode 7 and an n-type mirror 2 is first converted to a surface plasmon and then reconverted to the light by the p-side electrode 7A, and then emitted outside the resonator. This improves the light transmittance, thereby permitting use of metal which is considered to have inherently low light transmittance as a material for the p-side electrode 7. If the p-side electrode 7 is made of metal, operating voltage is reduced and heat dissipation improves, without causing a spike in a valence band, which occurs when a semiconductor layer is used. Further, due to the nonlinear effect of the mirror, optical feedback to the inside of the resonator is controlled, whereby a laser device with excellent noise characteristic is obtained.
摘要翻译：根据本发明，由金属制成的第一p侧电极7A，其具有规则排列的直径小于激光振荡波长的孔10，第二p侧电极7B布置在第一 p型电极7A用作表面发射激光器的p侧反射镜。首先将由p侧电极7和n型反射镜2形成的谐振器中的光转换为表面等离子体，然后通过p侧电极7A再次转换为光，然后发射到谐振器外部。这提高了透光率，从而允许使用被认为具有固有的低透光率的金属作为p侧电极7的材料。如果p侧电极7由金属制成，则工作电压降低，散热改善，而不会在使用半导体层时发生价带的尖峰。此外，由于反射镜的非线性效应，对谐振器内部的光反馈被控制，从而获得具有优异噪声特性的激光器件。

2. 发明授权

US07436874B2 Laser device 失效
标题翻译：激光设备
公开(公告)号：US07436874B2
公开(公告)日：2008-10-14
申请号：US11023419
申请日：2004-12-29
申请人： Toshikazu Onishi , Kazutoshi Onozawa , Shinji Yoshida , Daisuke Ueda
发明人： Toshikazu Onishi , Kazutoshi Onozawa , Shinji Yoshida , Daisuke Ueda
IPC分类号： H01S3/00 , H01S3/08
CPC分类号： H01S5/18394 , H01S5/1046 , H01S5/18319 , H01S5/1835
摘要： According to the present invention, a first p-side electrode 7A made of metal which is provided with regularly arranged holes 10 having a diameter smaller than a laser oscillation wavelength and a second p-side electrode 7B arranged around the periphery of the first p-type electrode 7A are used as a p-side mirror of a surface-emitting laser. Light in a resonator formed of a p-side electrode 7 and an n-type mirror 2 is first converted to a surface plasmon and then reconverted to the light by the p-side electrode 7A, and then emitted outside the resonator.
摘要翻译：根据本发明，由金属制成的第一p侧电极7A，其具有规则排列的直径小于激光振荡波长的孔10，第二p侧电极7B布置在第一 p型电极7A用作表面发射激光器的p侧反射镜。首先将由p侧电极7和n型反射镜2形成的谐振器中的光转换为表面等离子体，然后通过p侧电极7A再次转换为光，然后发射到谐振器外部。

3. 发明授权

US07391798B2 Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US07391798B2
公开(公告)日：2008-06-24
申请号：US11410048
申请日：2006-04-25
申请人： Toshikazu Onishi , Kazutoshi Onozawa , Tetsuzo Ueda
发明人： Toshikazu Onishi , Kazutoshi Onozawa , Tetsuzo Ueda
IPC分类号： H01S5/00
CPC分类号： H01S5/18358 , B82Y20/00 , H01S5/18311 , H01S5/2009 , H01S5/3211 , H01S5/34313 , H01S2301/176
摘要： A semiconductor laser device includes: an active layer formed on a substrate and including an AlGaAs layer; and an upper spacer layer formed at least one of above and below the active layer and including AlaGabIn1-a-bP (where 0≦a≦1, 0≦b≦1, and 0≦a+b≦1). The upper spacer layer has a composition enough to serve as a barrier layer against electrons injected into the active layer.
摘要翻译：半导体激光器件包括：形成在衬底上并包括AlGaAs层的有源层; 以及形成在有源层的上方和下方中的至少一个并且包括Al-1-ab P（其中第一个和第二个）的上隔离层 0 <= a <= 1，0 <= b <= 1，0 <= a + b <= 1）。上间隔层具有足以用作抵抗注入有源层的电子的阻挡层的组成。

4. 发明申请

US20060245459A1 Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US20060245459A1
公开(公告)日：2006-11-02
申请号：US11410048
申请日：2006-04-25
申请人： Toshikazu Onishi , Kazutoshi Onozawa , Tetsuzo Ueda
发明人： Toshikazu Onishi , Kazutoshi Onozawa , Tetsuzo Ueda
IPC分类号： H01S5/00
CPC分类号： H01S5/18358 , B82Y20/00 , H01S5/18311 , H01S5/2009 , H01S5/3211 , H01S5/34313 , H01S2301/176
摘要： A semiconductor laser device includes: an active layer formed on a substrate and including an AlGaAs layer; and an upper spacer layer formed at least one of above and below the active layer and including AlaGabIn1-a-bP (where 0≦a≦1, 0≦b≦1, and 0≦a+b≦1). The upper spacer layer has a composition enough to serve as a barrier layer against electrons injected into the active layer.
摘要翻译：半导体激光器件包括：形成在衬底上并包括AlGaAs层的有源层; 以及形成在有源层的上方和下方中的至少一个并且包括Al-1-ab P（其中第一个和第二个）的上隔离层 0 <= a <= 1，0 <= b <= 1，0 <= a + b <= 1）。上间隔层具有足以用作抵抗注入有源层的电子的阻挡层的组成。

5. 发明申请

US20070058982A1 Surface emitting laser, photodetector and optical communication system using the same 有权
标题翻译：表面发射激光，光电检测器和光通信系统使用相同
公开(公告)号：US20070058982A1
公开(公告)日：2007-03-15
申请号：US11519973
申请日：2006-09-13
申请人： Toshikazu Onishi , Tetsuzo Ueda , Daisuke Ueda
发明人： Toshikazu Onishi , Tetsuzo Ueda , Daisuke Ueda
IPC分类号： H04B10/00
CPC分类号： H01S5/18355 , B82Y20/00 , H01L31/035281 , H01L31/105 , H01S5/02284 , H01S5/0425 , H01S5/18311 , H01S5/18319 , H01S5/18344 , H01S5/18358 , H01S5/18386 , H01S5/3432 , H01S5/423 , Y02E10/50
摘要： A surface emitting laser includes a plurality of light-emitting portions for emitting laser light beams in different linearly polarized light directions. The light-emitting portions are formed on the substrate and located close to each other. The light-emitting portions include metal opening arrays through which light beams in different linearly polarized light directions respectively pass.
摘要翻译：表面发射激光器包括用于在不同的线偏振光方向上发射激光束的多个发光部分。发光部分形成在基板上并且彼此靠近。发光部分包括分别通过不同线偏振光方向的光束的金属开口阵列。

6. 发明授权

US07873090B2 Surface emitting laser, photodetector and optical communication system using the same 有权
标题翻译：表面发射激光，光电检测器和光通信系统使用相同
公开(公告)号：US07873090B2
公开(公告)日：2011-01-18
申请号：US11519973
申请日：2006-09-13
申请人： Toshikazu Onishi , Tetsuzo Ueda , Daisuke Ueda
发明人： Toshikazu Onishi , Tetsuzo Ueda , Daisuke Ueda
IPC分类号： H01S5/068 , H01S5/183 , H01S5/02 , H01S5/42
CPC分类号： H01S5/18355 , B82Y20/00 , H01L31/035281 , H01L31/105 , H01S5/02284 , H01S5/0425 , H01S5/18311 , H01S5/18319 , H01S5/18344 , H01S5/18358 , H01S5/18386 , H01S5/3432 , H01S5/423 , Y02E10/50
摘要： A surface emitting laser includes a plurality of light-emitting portions for emitting laser light beams in different linearly polarized light directions. The light-emitting portions are formed on the substrate and located close to each other. The light-emitting portions include metal opening arrays through which light beams in different linearly polarized light directions respectively pass.
摘要翻译：表面发射激光器包括用于在不同的线偏振光方向上发射激光束的多个发光部分。发光部分形成在基板上并且彼此靠近。发光部分包括分别通过不同线偏振光方向的光束的金属开口阵列。

7. 发明授权

US07745374B2 Thermal transfer receiving sheet, production method thereof and image forming method using the sheet 有权
标题翻译：热转印接收片材，其制造方法和使用该片材的成像方法
公开(公告)号：US07745374B2
公开(公告)日：2010-06-29
申请号：US10566202
申请日：2004-08-04
申请人： Yoshimasa Tanaka , Masato Kawamura , Chikara Tsukada , Kyoko Uchida , Toshikazu Onishi , Toru Nakai , Kazuyuki Tachibana , Hideaki Shinohara
发明人： Yoshimasa Tanaka , Masato Kawamura , Chikara Tsukada , Kyoko Uchida , Toshikazu Onishi , Toru Nakai , Kazuyuki Tachibana , Hideaki Shinohara
IPC分类号： B41M5/035 , B41M5/50
CPC分类号： B41M5/42 , B41M5/44 , B41M2205/32 , B41M2205/36 , B41M2205/38
摘要： A thermal transfer receiving sheet comprising a sheet-like support having sequentially formed on at least one surface thereof a hollow particle-containing intermediate layer and an image receiving layer, wherein the hollow particles have an average particle diameter of 0.2 to 35 μm and a hollow percentage by volume of 30 to 97% and the printing smoothness (Rp value) on the surface of the thermal transfer receiving sheet, as measured by using a Microtopograph under an applied pressure of 0.1 MPa 10 m-seconds after the initiation of pressure application, is 1.5 μm or less. A production method of the thermal transfer receiving sheet is also provided.
摘要翻译：一种热转印接收片材，其包含片状载体，所述片状载体在其至少一个表面上依次形成有中空颗粒的中间层和图像接收层，其中所述中空颗粒的平均粒径为0.2〜35μm，在热压接受片的表面上的印刷平滑度（Rp值）在压力施加开始后的0.1MPa的施加压力下使用微图形仪测量，为1.5μm以下。还提供了热转印接收片材的制造方法。

8. 发明授权

US07402447B2 Semiconductor laser device and method for fabricating the same 失效
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US07402447B2
公开(公告)日：2008-07-22
申请号：US11346373
申请日：2006-02-03
申请人： Toshikazu Onishi
发明人： Toshikazu Onishi
IPC分类号： H01L21/00
CPC分类号： B82Y20/00 , H01S5/164 , H01S5/2231 , H01S5/3072 , H01S5/34326 , H01S5/3436
摘要： A semiconductor laser device according to the present invention has a semiconductor substrate, an active layer formed on the semiconductor substrate and made of a compound semiconductor containing phosphorus, a guide layer formed on the active layer and made of a compound semiconductor a dopant diffusion preventing layer formed on the guide layer and made of a semiconductor compound containing arsenic, and a clad layer formed on the dopant diffusion preventing layer and made of a compound semiconductor containing a dopant.
摘要翻译：根据本发明的半导体激光器件具有半导体衬底，形成在半导体衬底上并由含磷的化合物半导体构成的有源层，形成在有源层上并由化合物半导体构成的引导层，掺杂剂扩散防止层形成在引导层上并由含砷的半导体化合物制成，以及形成在掺杂剂扩散防止层上并由含有掺杂剂的化合物半导体构成的覆层。

9. 发明授权

US07215691B2 Semiconductor laser device and method for fabricating the same 失效
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US07215691B2
公开(公告)日：2007-05-08
申请号：US10665469
申请日：2003-09-22
申请人： Toshikazu Onishi
发明人： Toshikazu Onishi
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01S5/2206 , H01S5/2231 , H01S5/305 , H01S5/3054 , H01S5/34326 , H01S5/3436
摘要： A semiconductor laser device has an active layer, a first cladding layer formed on the active layer, and a second cladding layer formed on the first cladding layer. The first cladding layer is doped with magnesium as a first impurity to have a high resistivity. The second cladding layer is doped with zinc as a second impurity to have a resistivity lower than the resistivity of the first cladding layer.
摘要翻译：半导体激光器件具有有源层，形成在有源层上的第一覆层和形成在第一覆层上的第二覆层。第一包层掺杂有镁作为第一杂质以具有高电阻率。第二包层掺杂有锌作为第二杂质，以使其电阻率低于第一包层的电阻率。

10. 发明授权

US07041524B2 Semiconductor laser device and method for fabricating the same 失效
公开(公告)号：US07041524B2
公开(公告)日：2006-05-09
申请号：US10961036
申请日：2004-10-12
申请人： Toshikazu Onishi
发明人： Toshikazu Onishi
IPC分类号： H01L21/00
CPC分类号： B82Y20/00 , H01S5/164 , H01S5/2231 , H01S5/3086 , H01S5/3425 , H01S5/3436
摘要： A semiconductor laser device according to the present invention has a semiconductor substrate having a first region and a second region adjacent to the first region, a first active layer formed on the first region and made of a compound semiconductor, a first clad layer formed on the first active layer and made of a compound semiconductor containing a first dopant, and a second active region formed on the second region and made of a compound semiconductor containing a second dopant having a diffusion coefficient with respect to the first active region which is higher than that of the first dopant.

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