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1. 发明申请

US20140030634A1 METHOD FOR BONDING ALUMINUM-BASED METALS 审中-公开
标题翻译：用于粘结铝基金属的方法
公开(公告)号：US20140030634A1
公开(公告)日：2014-01-30
申请号：US13819390
申请日：2011-08-30
申请人： Toshikazu Nanbu , Kenji Miyamoto , Masayuki Inoue , Chika Yamamoto , Yoshitaka Uehara , Akio Hirose
发明人： Toshikazu Nanbu , Kenji Miyamoto , Masayuki Inoue , Chika Yamamoto , Yoshitaka Uehara , Akio Hirose
IPC分类号： B23K20/00
摘要： An inexpensive bonding method is provided to bond materials constituted of an aluminum-based metal to each other at a low temperature and a low pressure while inhibiting deformation, without requiring the use of a flux and minimizing the influence on the base materials and the periphery. Also provided are various bonded parts obtained by the bonding method. An insert material comprising Zn as an element that undergoes a eutectic reaction with Al is interposed between two materials constituted of an aluminum-based metal. The two materials are heated, while being pressed against each other, to a temperature at which the eutectic reaction takes place, thereby generating, at the bonding interface between the two materials, a melt due to the eutectic reaction with some of the Al contained in the base materials and discharging the Al oxide films from the bonding interface together with the melt. Thus, the two materials are bonded.
摘要翻译：提供廉价的接合方法，以便在不需要使用助焊剂并且最小化对基材和周边的影响的同时，在低温和低压下将由铝基金属构成的材料彼此粘合，同时抑制变形。还提供了通过接合方法获得的各种粘合部件。包含Zn作为与Al发生共晶反应的元素的插入材料插入由铝基金属构成的两种材料之间。将这两种材料在彼此挤压的同时加热到发生共晶反应的温度，从而在两种材料之间的结合界面处产生熔体，这是由于与包含在其中的一些Al的共晶反应基材并与熔融物一起从接合界面排出Al氧化物膜。因此，两种材料结合。

2. 发明授权

US10556292B2 Method for bonding aluminum-based metals 有权
公开(公告)号：US10556292B2
公开(公告)日：2020-02-11
申请号：US13819390
申请日：2011-08-30
申请人： Toshikazu Nanbu , Kenji Miyamoto , Masayuki Inoue , Chika Yamamoto , Yoshitaka Uehara , Akio Hirose
发明人： Toshikazu Nanbu , Kenji Miyamoto , Masayuki Inoue , Chika Yamamoto , Yoshitaka Uehara , Akio Hirose
IPC分类号： B23K20/00 , B23K35/28 , B23K35/00 , B23K20/16 , B23K20/233 , B23K20/02 , B23K35/26 , B23K103/10
摘要： An inexpensive bonding method is provided to bond materials constituted of an aluminum-based metal to each other at a low temperature and a low pressure while inhibiting deformation, without requiring the use of a flux and minimizing the influence on the base materials and the periphery. Also provided are various bonded parts obtained by the bonding method. An insert material comprising Zn as an element that undergoes a eutectic reaction with Al is interposed between two materials constituted of an aluminum-based metal. The two materials are heated, while being pressed against each other, to a temperature at which the eutectic reaction takes place, thereby generating, at the bonding interface between the two materials, a melt due to the eutectic reaction with some of the Al contained in the base materials and discharging the Al oxide films from the bonding interface together with the melt. Thus, the two materials are bonded.

3. 发明申请

US20060150387A1 Dissimilar metal joining method 有权
标题翻译：异种金属接合方法
公开(公告)号：US20060150387A1
公开(公告)日：2006-07-13
申请号：US11301115
申请日：2005-12-13
申请人： Kojiro Kobayashi , Akio Hirose , Shigeyuki Nakagawa , Kenji Miyamoto , Minoru Kasukawa , Masayuki Inoue , Tetsuji Morita
发明人： Kojiro Kobayashi , Akio Hirose , Shigeyuki Nakagawa , Kenji Miyamoto , Minoru Kasukawa , Masayuki Inoue , Tetsuji Morita
IPC分类号： B23P25/00
CPC分类号： B23K11/20 , B23K11/166 , B23K20/2275 , B23K26/211 , B23K26/32 , B23K26/323 , B23K2101/34 , B23K2103/08 , B23K2103/20 , B23K2103/50 , Y10T29/49885
摘要： According to a metal joining method of the present invention, first and second dissimilar metals are joined together by interposing between the first and second metal materials a third metal material dissimilar to the first and second metal materials and causing eutectic melting at least either at an interface between the first and third metal materials or at an interface between the second and third metal materials.
摘要翻译：根据本发明的金属接合方法，通过在第一和第二金属材料之间插入与第一和第二金属材料不同的第三金属材料，将第一和第二异种金属接合在一起，并使至少在界面在第一和第三金属材料之间或在第二和第三金属材料之间的界面处。

4. 发明授权

US08020749B2 Dissimilar metal joining method 有权
标题翻译：异种金属接合方法
公开(公告)号：US08020749B2
公开(公告)日：2011-09-20
申请号：US12944421
申请日：2010-11-11
申请人： Kojiro Kobayashi , Akio Hirose , Shigeyuki Nakagawa , Kenji Miyamoto , Minoru Kasukawa , Masayuki Inoue , Tetsuji Morita
发明人： Kojiro Kobayashi , Akio Hirose , Shigeyuki Nakagawa , Kenji Miyamoto , Minoru Kasukawa , Masayuki Inoue , Tetsuji Morita
IPC分类号： B23K1/00 , B23K1/002 , B23K1/008
CPC分类号： B23K11/20 , B23K11/166 , B23K20/2275 , B23K26/211 , B23K26/32 , B23K26/323 , B23K2101/34 , B23K2103/08 , B23K2103/20 , B23K2103/50 , Y10T29/49885
摘要： According to a metal joining method of the present invention, first and second dissimilar metals are joined together by interposing between the first and second metal materials a third metal material dissimilar to the first and second metal materials and causing eutectic melting at least either at an interface between the first and third metal materials or at an interface between the second and third metal materials.
摘要翻译：根据本发明的金属接合方法，通过在第一和第二金属材料之间插入与第一和第二金属材料不同的第三金属材料，将第一和第二异种金属接合在一起，并使至少在界面在第一和第三金属材料之间或在第二和第三金属材料之间的界面处。

5. 发明授权

US07850059B2 Dissimilar metal joining method 有权
标题翻译：异种金属接合方法
公开(公告)号：US07850059B2
公开(公告)日：2010-12-14
申请号：US11301115
申请日：2005-12-13
申请人： Kojiro Kobayashi , Akio Hirose , Shigeyuki Nakagawa , Kenji Miyamoto , Minoru Kasukawa , Masayuki Inoue , Tetsuji Morita
发明人： Kojiro Kobayashi , Akio Hirose , Shigeyuki Nakagawa , Kenji Miyamoto , Minoru Kasukawa , Masayuki Inoue , Tetsuji Morita
IPC分类号： B23K1/00 , B23K1/002 , B23K1/008
CPC分类号： B23K11/20 , B23K11/166 , B23K20/2275 , B23K26/211 , B23K26/32 , B23K26/323 , B23K2101/34 , B23K2103/08 , B23K2103/20 , B23K2103/50 , Y10T29/49885
摘要： According to a metal joining method of the present invention, first and second dissimilar metals are joined together by interposing between the first and second metal materials a third metal material dissimilar to the first and second metal materials and causing eutectic melting at least either at an interface between the first and third metal materials or at an interface between the second and third metal materials.
摘要翻译：根据本发明的金属接合方法，通过在第一和第二金属材料之间插入与第一和第二金属材料不同的第三金属材料，将第一和第二异种金属接合在一起，并使至少在界面在第一和第三金属材料之间或在第二和第三金属材料之间的界面处。

6. 发明授权

US07984840B2 Dissimilar metal joining method 有权
公开(公告)号：US07984840B2
公开(公告)日：2011-07-26
申请号：US12944417
申请日：2010-11-11
申请人： Kojiro Kobayashi , Akio Hirose , Shigeyuki Nakagawa , Kenji Miyamoto , Minoru Kasukawa , Masayuki Inoue , Tetsuji Morita
发明人： Kojiro Kobayashi , Akio Hirose , Shigeyuki Nakagawa , Kenji Miyamoto , Minoru Kasukawa , Masayuki Inoue , Tetsuji Morita
IPC分类号： B23K1/00 , B23K1/002 , B23K1/008
CPC分类号： B23K11/20 , B23K11/166 , B23K20/2275 , B23K26/211 , B23K26/32 , B23K26/323 , B23K2101/34 , B23K2103/08 , B23K2103/20 , B23K2103/50 , Y10T29/49885
摘要： According to a metal joining method of the present invention, first and second dissimilar metals are joined together by interposing between the first and second metal materials a third metal material dissimilar to the first and second metal materials and causing eutectic melting at least either at an interface between the first and third metal materials or at an interface between the second and third metal materials.

7. 发明申请

US20110056920A1 DISSIMILAR METAL JOINING METHOD 有权
公开(公告)号：US20110056920A1
公开(公告)日：2011-03-10
申请号：US12944417
申请日：2010-11-11
申请人： Kojiro Kobayashi , Akio Hirose , Shigeyuki Nakagawa , Kenji Miyamoto , Minoru Kasukawa , Masayuki Inoue , Tetsuji Morita
发明人： Kojiro Kobayashi , Akio Hirose , Shigeyuki Nakagawa , Kenji Miyamoto , Minoru Kasukawa , Masayuki Inoue , Tetsuji Morita
IPC分类号： B23K26/20 , B23K31/02
CPC分类号： B23K11/20 , B23K11/166 , B23K20/2275 , B23K26/211 , B23K26/32 , B23K26/323 , B23K2101/34 , B23K2103/08 , B23K2103/20 , B23K2103/50 , Y10T29/49885
摘要： According to a metal joining method of the present invention, first and second dissimilar metals are joined together by interposing between the first and second metal materials a third metal material dissimilar to the first and second metal materials and causing eutectic melting at least either at an interface between the first and third metal materials or at an interface between the second and third metal materials.

8. 发明授权

US08492005B2 Joining method and joint structure of dissimilar metal 有权
标题翻译：不同金属的接合方法和接头结构
公开(公告)号：US08492005B2
公开(公告)日：2013-07-23
申请号：US12812878
申请日：2009-01-16
申请人： Shigeyuki Nakagawa , Kenji Miyamoto , Minoru Kasukawa , Masao Aihara , Sadao Yanagida , Akio Hirose
发明人： Shigeyuki Nakagawa , Kenji Miyamoto , Minoru Kasukawa , Masao Aihara , Sadao Yanagida , Akio Hirose
IPC分类号： B32B15/18 , B23K20/18
CPC分类号： B23K11/115 , B23K11/16 , B23K11/3009 , B23K13/00 , B23K20/02 , B23K20/10 , B23K20/122 , B23K20/227 , B23K26/21 , B23K26/323 , B23K2103/15 , B23K2103/18 , B32B15/013 , C22C18/04 , C22C23/02 , Y10T428/12681 , Y10T428/12729 , Y10T428/12757
摘要： In joining a magnesium alloy material 1 (first material) and a steel material (second material), a zinc-plated steel plate 2 plated with zinc (metal C) is used as a steel material, Al (metal D) is added to the magnesium alloy material 1. Next, eutectic melting of Mg and Zn is caused so as to remove a product produced by the eutectic melting with an oxide film 1f and impurities from a joint interface. Moreover, an Al—Mg system intermetallic compound such as Al3Mg2 and an Fe—Al system intermetallic compound such as FeAl3 are produced, whereby regenerated surfaces of both materials 1 and 2 are joined via a compound layer 3 containing those intermetallic compounds.
摘要翻译：在接合镁合金材料1（第一材料）和钢材（第二材料）时，使用镀有锌（金属C）的镀锌钢板2作为钢材，将Al（金属D）加入到镁合金材料1.接下来，引起Mg和Zn的共晶熔融，以除去由氧化物膜1f共晶熔融产生的产物和从接合界面的杂质。此外，生产Al-Mg系金属间化合物如Al3Mg2和Fe-Al系金属间化合物如FeAl 3，由此通过含有这些金属间化合物的化合物层3将两种材料1和2的再生表面接合。

9. 发明申请

US20110052935A1 JOINING METHOD AND JOINT STRUCTURE OF DISSIMILAR METAL 有权
标题翻译：异种金属的接合方法和接头结构
公开(公告)号：US20110052935A1
公开(公告)日：2011-03-03
申请号：US12812878
申请日：2009-01-16
申请人： Shigeyuki Nakagawa , Kenji Miyamoto , Minoru Kasukawa , Masao Aihara , Sadao Yanagida , Akio Hirose
发明人： Shigeyuki Nakagawa , Kenji Miyamoto , Minoru Kasukawa , Masao Aihara , Sadao Yanagida , Akio Hirose
IPC分类号： B32B15/01 , B23K31/02
CPC分类号： B23K11/115 , B23K11/16 , B23K11/3009 , B23K13/00 , B23K20/02 , B23K20/10 , B23K20/122 , B23K20/227 , B23K26/21 , B23K26/323 , B23K2103/15 , B23K2103/18 , B32B15/013 , C22C18/04 , C22C23/02 , Y10T428/12681 , Y10T428/12729 , Y10T428/12757
摘要： In joining a magnesium alloy material 1 (first material) and a steel material (second material), a zinc-plated steel plate 2 plated with zinc (metal C) is used as a steel material, Al (metal D) is added to the magnesium alloy material 1. Next, eutectic melting of Mg and Zn is caused so as to remove a product produced by the eutectic melting with an oxide film 1f and impurities from a joint interface. Moreover, an Al—Mg system intermetallic compound such as Al3Mg2 and an Fe—Al system intermetallic compound such as FeAl3 are produced, whereby regenerated surfaces of both materials 1 and 2 are joined via a compound layer 3 containing those intermetallic compounds.
摘要翻译：在接合镁合金材料1（第一材料）和钢材（第二材料）时，使用镀有锌（金属C）的镀锌钢板2作为钢材，将Al（金属D）加入到镁合金材料1.接下来，引起Mg和Zn的共晶熔融，以除去由氧化物膜1f共晶熔融产生的产物和从接合界面的杂质。此外，生产Al-Mg系金属间化合物如Al3Mg2和Fe-Al系金属间化合物如FeAl 3，由此通过含有这些金属间化合物的化合物层3将两种材料1和2的再生表面接合。

10. 发明申请

US20080303161A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080303161A1
公开(公告)日：2008-12-11
申请号：US12042716
申请日：2008-03-05
申请人： Kojiro Kobayashi , Akio Hirose , Masanori Yamagiwa
发明人： Kojiro Kobayashi , Akio Hirose , Masanori Yamagiwa
IPC分类号： H01L23/48
CPC分类号： H01L24/32 , H01L23/3735 , H01L23/3736 , H01L24/29 , H01L24/83 , H01L2224/04026 , H01L2224/2908 , H01L2224/29101 , H01L2224/29111 , H01L2224/29139 , H01L2224/29339 , H01L2224/29344 , H01L2224/29369 , H01L2224/32245 , H01L2224/8184 , H01L2224/83801 , H01L2224/8384 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/10253 , H01L2924/10272 , H01L2924/10329 , H01L2924/19043 , H01L2924/00 , H01L2924/01014 , H01L2924/00014 , H01L2924/3512
摘要： A method of manufacturing a semiconductor device includes: preparing a semiconductor element having a first metal layer made of first metal on a surface thereof, and a metal substrate made of second metal, the metal substrate having a fourth metal layer made of fourth metal on a surface thereof, and mounting the semiconductor element on the surface thereof; providing metal nanopaste between the first metal layer and the fourth metal layer, the metal nanopaste being formed by dispersing fine particles made of third metal with a mean diameter of 100 nm or less into an organic solvent; and heating, or heating and pressurizing the semiconductor element and the metal substrate between which the metal nanopaste is provided, thereby removing the solvent. Further, each of the first, third and fourth metals is made of any metal of gold, silver, platinum, copper, nickel, chromium, iron, lead, and cobalt, an alloy containing at least one of the metals, or a mixture of the metals or the alloys. By the manufacturing method, it is possible to bond the semiconductor element to the metal substrate favorably.
摘要翻译：一种制造半导体器件的方法包括：制备其表面上具有由第一金属制成的第一金属层的半导体元件和由第二金属制成的金属基板，所述金属基板具有由第四金属制成的第四金属层表面，并将半导体元件安装在其表面上; 在第一金属层和第四金属层之间提供金属纳米糊状物，通过将平均直径为100nm以下的第三金属制成的细颗粒分散在有机溶剂中而形成金属纳米糊剂; 加热或加热和加压半导体元件和金属基底之间，从而除去溶剂。此外，第一，第三和第四金属中的每一个由金，银，铂，铜，镍，铬，铁，铅和钴的任何金属制成，含有至少一种金属的合金或金属或合金。通过制造方法，可以有利地将半导体元件与金属基板结合。

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