会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 5. 发明授权
    • Three-dimensional machining method
    • 三维加工方法
    • US5515290A
    • 1996-05-07
    • US323025
    • 1994-10-14
    • Kenichi Honda
    • Kenichi Honda
    • G05B19/4099
    • G05B19/4099Y02P90/265
    • A plurality of curved surfaces which have distinct characteristics are defined as a unified curved surface. The definition is made by a group of polynomials with respect to parameters u and v in two directions reflecting the characteristics of the curved surfaces. Then, paths of a cutting tool to machine the unified curved surface are generated by using the polynomials. Further, a curved surface is divided by a curve into two regions, and a point is designated in one of the regions. Only with respect to the region which includes the designated point, paths of the cutting tool are generated.
    • 具有不同特征的多个曲面被定义为统一的曲面。 该定义通过反映曲面特征的两个方向上的参数u和v的一组多项式来进行。 然后,通过使用多项式来生成用于加工统一曲面的切削工具的路径。 此外,曲面被曲线分割为两个区域,并且在一个区域中指定点。 仅对于包括指定点的区域,生成切削工具的路径。
    • 9. 发明授权
    • Thyristor with improved dv/dt resistance
    • 晶闸管具有改善的dv / dt电阻
    • US5637886A
    • 1997-06-10
    • US388471
    • 1995-02-14
    • Katsumi SatohKenichi HondaKazuhiko Niwayama
    • Katsumi SatohKenichi HondaKazuhiko Niwayama
    • H01L29/74H01L29/861H01L31/111
    • H01L29/7428H01L31/1113
    • When an abrupt voltage noise is applied across an anode electrode (A) and a cathode electrode (K), displacement currents (I.sub.10 to I.sub.30) which are responsive to junction capacitances (C.sub.10 to C.sub.30) of respective unit thyristors (ST.sub.1, ST.sub.2, MT) are generated. The displacement currents (I.sub.10 to I.sub.30) flow into a compensation electrode (C) through paths in a P base layer (2) having resistances (R.sub.10 to R.sub.30), and further flow to an external power source through the cathode electrode (K) which is short-circuited with the compensation electrode (C). The paths of the three displacement currents (I.sub.10 to I.sub.30) are separated from each other by resistances (R.sub.12, R.sub.23). Therefore, a forward bias voltage of a junction (D.sub.10) caused by the displacement current (I.sub.10) is attenuated by the displacement current (I.sub.20), while a forward bias voltage of a junction (D.sub.20) caused by the displacement current (I.sub.20) is attenuated by the displacement current (I.sub.30). Thus, it is possible to improve a thyristor of a multistage structure in dv/dt resistance, at no sacrifice of sensitivity.
    • 当在阳极电极(A)和阴极电极(K)之间施加突然的电压噪声时,响应各单位晶闸管(ST1,ST2,MT)的结电容(C10〜C30)的位移电流(I10〜I30) )。 位移电流(I10〜I30)通过具有电阻(R10〜R30)的P基极层(2)中的路径流入补偿电极(C),并通过阴极电极(K)进一步流向外部电源 与补偿电极(C)短路。 三个位移电流(I10〜I30)的路径通过电阻(R12,R23)彼此分离。 因此,由位移电流(I10)引起的接点(D10)的正向偏置电压被位移电流(I20)衰减,而由位移电流(I20)引起的接点(D20)的正向偏置电压为 被位移电流衰减(I30)。 因此,可以在不牺牲灵敏度的情况下,以dv / dt电阻改善多级结构的晶闸管。