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1. 发明申请

US20130010822A1 VERTICAL LIGHT EMITTING DEVICE AND MANUFACTURING METHOD 有权
标题翻译：垂直发光装置及制造方法
公开(公告)号：US20130010822A1
公开(公告)日：2013-01-10
申请号：US13530255
申请日：2012-06-22
申请人： Toshihito SUZUKI , Keishi TAKAKI , Suguru IMAI , Yasumasa KAWAKITA
发明人： Toshihito SUZUKI , Keishi TAKAKI , Suguru IMAI , Yasumasa KAWAKITA
IPC分类号： H01L29/00 , H01L21/02
CPC分类号： H01S5/18327 , H01S5/18311 , H01S5/18333 , H01S5/18341 , H01S5/18358 , H01S5/18369 , H01S2301/02 , H01S2301/166
摘要： Provided is a vertical light emitting device comprising an upper multilayer reflective film and a lower multilayer reflective film that are formed facing each other and oscillate light; an intermediate layer that is formed below the upper multilayer reflective film and includes a layer having a different composition than the upper multilayer reflective film; and an electrode portion that is formed to sandwich the intermediate layer in a cross-sectional plane parallel to an oscillation direction of the light and to have a top end that is higher than a top surface of the intermediate layer. After the electrode portion is formed to sandwich the intermediate layer, the upper multilayer reflective film is layered on the intermediate layer.
摘要翻译：提供一种垂直发光装置，其包括彼此面对并且使光振荡的上部多层反射膜和下部多层反射膜; 形成在上层多层反射膜的下方的中间层，具有与上层多层反射膜不同的组成的层; 以及电极部，其形成为将所述中间层夹在与所述光的振荡方向平行的横截面中，并且具有高于所述中间层的顶面的顶端。在形成电极部以夹持中间层之后，将上部多层反射膜层叠在中间层上。

2. 发明申请

US20120251039A1 LASER DEVICE, METHOD OF MANUFACTURING THE SAME, LASER DEVICE ARRAY, LIGHT SOURCE AND LIGHT MODULE 有权
标题翻译：激光器件，其制造方法，激光器件阵列，光源和光模块
公开(公告)号：US20120251039A1
公开(公告)日：2012-10-04
申请号：US13435061
申请日：2012-03-30
申请人： Hitoshi SHIMIZU , Toshihito SUZUKI , Yasumasa KAWAKITA , Keishi TAKAKI
发明人： Hitoshi SHIMIZU , Toshihito SUZUKI , Yasumasa KAWAKITA , Keishi TAKAKI
IPC分类号： G02B6/12 , H01S5/028 , H01S3/10 , H01L33/06
CPC分类号： H01S5/18311 , B82Y20/00 , H01S5/0021 , H01S5/18333 , H01S5/18358 , H01S5/34306 , H01S5/423 , H01S2301/176
摘要： Provided is a laser device comprising a substrate, an active layer, and a current confinement layer. The current confinement layer includes an oxide layer that is formed extending from a edge of the current confinement layer in a parallel plane parallel to a surface of the substrate, toward a center of the current confinement layer along the parallel plane, and that does not have an inflection point between the edge and a tip portion formed closer to the center or has a plurality of inflection points formed between the edge and the tip portion.
摘要翻译：提供了一种激光器件，其包括衬底，有源层和电流限制层。电流限制层包括从平行于衬底表面的平行平面中的电流限制层边缘形成的氧化物层沿着平行平面向电流限制层的中心延伸，并且不具有所述边缘和形成在所述中心附近的尖端部分之间的拐点或在所述边缘和所述尖端部分之间形成有多个拐点。

3. 发明申请

US20100271690A1 VERTICAL CAVITY SURFACE EMITTING LASER ELEMENT, VERTICAL CAVITY SURFACE EMITTING LASER ARRAY ELEMENT, VERTICAL CAVITY SURFACE EMITTING LASER DEVICE, LIGHT SOURCE DEVICE, AND OPTICAL MODULE 有权
标题翻译：垂直孔表面发射激光元件，垂直孔表面发射激光阵列元件，垂直孔表面发射激光器件，光源器件和光学模块
公开(公告)号：US20100271690A1
公开(公告)日：2010-10-28
申请号：US12726668
申请日：2010-03-18
申请人： Yasumasa KAWAKITA , Takeo Kageyama , Hitoshi Shimizu , Hirotatsu Ishii
发明人： Yasumasa KAWAKITA , Takeo Kageyama , Hitoshi Shimizu , Hirotatsu Ishii
IPC分类号： H01S3/0941 , H01S5/323
CPC分类号： H01S5/18341 , B82Y20/00 , G11B7/123 , G11B7/127 , H01L2224/48091 , H01L2224/48137 , H01S5/0014 , H01S5/0071 , H01S5/0208 , H01S5/02228 , H01S5/02248 , H01S5/02284 , H01S5/02288 , H01S5/02292 , H01S5/18311 , H01S5/18369 , H01S5/305 , H01S5/3201 , H01S5/34306 , H01S5/423 , H01L2924/00014
摘要： Included are: an active layer provided between an upper multilayer film reflecting mirror and a lower multilayer film reflecting mirror formed on a GaAs substrate and formed of a periodic structure of a low-refractive-index layer formed of AlxGa1-xAs (0.8≦x≦1) and a high-refractive-index layer formed of AlyGa1-yAs (0≦y≦x), at least one of the low-refractive-index layer and the high-refractive-index layer being of n-type; and a lower electrode provided between the lower multilayer film reflecting mirror and the active layer and configured to inject an electric current into the active layer.
摘要翻译：包括：在上层多层膜反射镜和形成在GaAs衬底上的下层多层膜反射镜之间形成的有源层，其由Al x Ga 1-x As（0.8＆amp; N e; x＆nlE）形成的低折射率层的周期性结构 ; 1）和由AlyGa1-yAs（0＆lt; nlE; y＆nlE; x）形成的高折射率层，所述低折射率层和所述高折射率层中的至少一个为n型; 以及下电极，设置在所述下多层膜反射镜和所述有源层之间，并且被配置为向所述有源层注入电流。

4. 发明申请

US20120020383A1 SURFACE EMITTING LASER, LIGHT SOURCE, AND OPTICAL MODULE 有权
标题翻译：表面发射激光，光源和光学模块
公开(公告)号：US20120020383A1
公开(公告)日：2012-01-26
申请号：US13187838
申请日：2011-07-21
申请人： Hitoshi SHIMIZU , Yasumasa KAWAKITA
发明人： Hitoshi SHIMIZU , Yasumasa KAWAKITA
IPC分类号： H01S5/42
CPC分类号： H01S5/18311 , G02B6/4214 , H01S5/02292 , H01S5/18341 , H01S5/18347 , H01S5/18358 , H01S5/18369 , H01S5/3054 , H01S5/3215
摘要： A surface emitting laser includes lower and upper multilayer mirrors, first-conductivity-type and second-conductivity-type contact layers formed between the lower and the upper multilayer mirrors, an active layer formed between the first-conductivity-type and the second-conductivity-type contact layers, a current confinement layer formed between the second-conductivity-type contact layer and the active layer, and first and second composition gradient layers formed facing each other across the current confinement layer. The first composition gradient layer and the second composition gradient layer are formed such that bandgap energy of each of the layers is monotonically decreased from the current confinement layer to an adjacent layer and approach bandgap energy of the adjacent layer in a growth direction.
摘要翻译：表面发射激光器包括下层和上层多层反射镜，形成在下层和上层多层反射镜之间的第一导电型和第二导电型接触层，形成在第一导电型和第二导电型之间的有源层型接触层，形成在第二导电型接触层和有源层之间的电流限制层以及横跨电流限制层彼此形成的第一和第二组成梯度层。形成第一组成梯度层和第二组成梯度层，使得每个层的带隙能量从电流限制层单调减小到相邻层，并且在生长方向上接近相邻层的带隙能量。

5. 发明申请

US20120008659A1 SURFACE EMITTING LASER 有权
标题翻译：表面发射激光
公开(公告)号：US20120008659A1
公开(公告)日：2012-01-12
申请号：US13176921
申请日：2011-07-06
申请人： Yasumasa KAWAKITA , Hitoshi SHIMIZU , Takeo KAGEYAMA
发明人： Yasumasa KAWAKITA , Hitoshi SHIMIZU , Takeo KAGEYAMA
IPC分类号： H01S5/323 , H01S5/18
CPC分类号： H01S5/18311 , H01S5/02208 , H01S5/02284 , H01S5/02288 , H01S5/0425 , H01S5/18322 , H01S5/18369 , H01S2304/04
摘要： A surface emitting laser includes a cavity region formed on a group-III-V compound substrate, which includes an active layer and a current confinement layer that has an aluminum oxide compound and confines a current path through which a current is injected into the active layer, an upper DBR mirror and a lower DBR mirror formed on the substrate, sandwiching the cavity region, and a graded-composition layer disposed to contact the current confinement layer, which has an aluminum composition ratio decreasing monotonically as a distance from the current confinement layer increases. The graded-composition layer includes a first region that contacts the current confinement layer and an oxidation stop layer that contacts the first region and that has a change rate of the aluminum composition ratio larger than that of the first region. The graded-composition layer is oxidized from an interface with the current confinement layer to at least a portion of the oxidation stop layer.
摘要翻译：表面发射激光器包括形成在III-V族化合物衬底上的空腔区域，该腔体区域包括有源层和具有氧化铝化合物的电流限制层，并限制电流通过该电流通路流入有源层，形成在基板上的上DBR镜和下DBR镜，夹着腔区，以及设置成接触电流限制层的渐变组成层，其具有与当前限制层距离单调减小的铝组成比增加渐变组成层包括接触电流限制层的第一区域和与第一区域接触的氧化停止层，并且其铝组成比的变化率大于第一区域的变化率。梯度组合物层从与电流限制层的界面氧化成氧化停止层的至少一部分。

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