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1. 发明授权

US5147497A Plasma apparatus, and method and system for extracting electrical signal of member to which high-frequency wave is applied 失效
标题翻译：等离子体装置以及用于提取高频波应用的会员电气信号的方法和系统
公开(公告)号：US5147497A
公开(公告)日：1992-09-15
申请号：US731261
申请日：1991-07-17
申请人： Toshihisa Nozawa , Osamu Kamikanda , Yukimasa Yoshida , Haruo Okano
发明人： Toshihisa Nozawa , Osamu Kamikanda , Yukimasa Yoshida , Haruo Okano
IPC分类号： C23F4/00 , G01K7/00 , G01K7/26 , H01J37/32 , H01L21/302 , H01L21/3065 , H01L21/66
CPC分类号： H01J37/32935
摘要： A system for measuring a temperature of a high-frequency electrode of a plasma etching apparatus has a temperature detecting element for detecting a temperature, a metal sheath member in which the temperature detecting element is provided to be insulated from it and which is kept in a DC floating state, an insulating member for insulating the sheath member from the high-frequency electrode, and a filter for removing a high-frequency component of an electrical signal sent from the temperature detecting element.

2. 发明授权

US5223113A Apparatus for forming reduced pressure and for processing object 失效
标题翻译：用于形成降低压力和加工对象的装置
公开(公告)号：US5223113A
公开(公告)日：1993-06-29
申请号：US732240
申请日：1991-07-18
申请人： Satoshi Kaneko , Taichi Fugita , Toshihisa Nozawa , Yoichi Ueda , Yukimasa Yoshida , Isahiro Hasegawa , Haruo Okano
发明人： Satoshi Kaneko , Taichi Fugita , Toshihisa Nozawa , Yoichi Ueda , Yukimasa Yoshida , Isahiro Hasegawa , Haruo Okano
IPC分类号： H01L21/00 , H01L21/677
CPC分类号： H01L21/67126 , H01L21/67103 , H01L21/67742
摘要： A semiconductor wafers processing apparatus comprises a susceptor for mounting and fixing a wafer thereon, a cooling jacket for cooling the susceptor, a process chamber whose wall encloses the susceptor and the cooling jacket, an O-ring for shielding from process atmosphere in the process chamber a clearance formed between an inner cylinder of the process chamber wall and the outer circumferences of the susceptor and the cooling jacket, and an exhaust pump for exhausting gas in the clearance. It further comprises load lock chambers for carrying the wafer into and out of the process chamber, and heat insulating members interposed between those faces of the process chamber and each of the load lock chambers which are opposed to each other. The process chamber wall can be heat-insulated from the susceptor and the cooling jacket by the exhausted clearance and the process chamber can be heat-insulated from each of the load lock chambers by the heat insulating members.

3. 发明授权

US5221403A Support table for plate-like body and processing apparatus using the table 失效
标题翻译：使用表的板状体和加工装置的支撑台
公开(公告)号：US5221403A
公开(公告)日：1993-06-22
申请号：US732410
申请日：1991-07-18
申请人： Toshihisa Nozawa , Junichi Arami , Isahiro Hasegawa , Haruo Okano
发明人： Toshihisa Nozawa , Junichi Arami , Isahiro Hasegawa , Haruo Okano
IPC分类号： C23C14/50 , C23C14/54 , C23C16/458 , C23C16/509 , H01J37/34 , H01L21/00 , H01L21/683
CPC分类号： H01L21/67069 , C23C14/50 , C23C14/541 , C23C16/4586 , C23C16/509 , H01J37/3244 , H01J37/3408 , H01J37/3435 , H01L21/6838 , H01J2237/2001 , H01J2237/2007 , H01J2237/334
摘要： A wafer support table is provided in a vacuum chamber of a magnetron plasma etching apparatus. This support table includes a first member having a mechanism for adjusting the temperature of a wafer, a second member having an electrostatic chuck for supporting the wafer on its upper surface, and a gas supply mechanism for supplying a gas between the first and second members.

4. 发明授权

US5234527A Liquid level detecting device and a processing apparatus 失效
标题翻译：液面检测装置和处理装置
公开(公告)号：US5234527A
公开(公告)日：1993-08-10
申请号：US731473
申请日：1991-07-17
申请人： Toshihisa Nozawa , Junichi Arami , Yukimasa Yoshida , Keiji Horioka
发明人： Toshihisa Nozawa , Junichi Arami , Yukimasa Yoshida , Keiji Horioka
IPC分类号： C23C14/54 , B01J3/00 , C23C16/46 , C23F4/00 , G01F23/22 , G01F23/24 , H01L21/302 , H01L21/3065
CPC分类号： B01J3/002 , G01F23/22 , H01J2237/2001
摘要： A liquid level detecting device used in a vacuum processing apparatus, the device comprising a liquid container section, an inlet pipe for liquid supply connected to the liquid container section, and outlet pipe for discharging the liquid when the liquid in the liquid container section overflows a predetermined liquid level, a temperature measurement terminal provided in the liquid container section, for detecting the temperature of the liquid in the container section, means for heating or cooling the temperature measurement terminal, and a liquid level detecting section for detecting the surface level of the liquid on the basis of the difference between two temperatures of the liquid measured when the heating or cooling means is in contact with the liquid and when not in contact.
摘要翻译：一种用于真空处理装置的液位检测装置，该装置包括液体容器部分，与液体容器部分连接的液体供给入口管，以及当液体容器部分中的液体溢出时排出液体的出口管预定液位，设置在液体容器部分中的用于检测容器部分中的液体的温度的温度测量端子，用于加热或冷却温度测量端子的装置，以及液位检测部分，用于检测基于当加热或冷却装置与液体接触时和当不接触时测量的液体的两个温度之间的差异的液体。

5. 发明授权

US09117764B2 Etching method, substrate processing method, pattern forming method, method for manufacturing semiconductor element, and semiconductor element 有权
标题翻译：蚀刻方法，基板处理方法，图案形成方法，半导体元件的制造方法以及半导体元件
公开(公告)号：US09117764B2
公开(公告)日：2015-08-25
申请号：US13819038
申请日：2011-07-29
申请人： Takaaki Matsuoka , Toshihisa Nozawa , Toshiyasu Hori
发明人： Takaaki Matsuoka , Toshihisa Nozawa , Toshiyasu Hori
IPC分类号： H01L21/302 , H01L21/308 , H01J37/32 , H01L21/02 , H01L21/027 , H01L21/311 , G03F7/004 , G03F7/075 , G03F7/09 , G03F7/20
CPC分类号： H01L21/3081 , G03F7/0046 , G03F7/0752 , G03F7/094 , G03F7/2041 , H01J37/32192 , H01L21/0212 , H01L21/02164 , H01L21/0217 , H01L21/02274 , H01L21/0276 , H01L21/3086 , H01L21/31111 , H01L21/31122
摘要： A fluorocarbon layer is formed on a silicon substrate that is a to-be-processed substrate (step A). A resist layer is formed on the thus-formed fluorocarbon layer (step B). Then, the resist layer is patterned into a predetermined shape by exposing the resist layer to light by means of a photoresist layer (step C). The fluorocarbon layer is etched using the resist layer, which has been patterned into a predetermined shape, as a mask (step D). Next, the resist layer served as a mask is removed (step E). After that, the silicon substrate is etched using the remained fluorocarbon layer as a mask (step F). Since the fluorocarbon layer by itself functions as an antireflective film and a harm mask, the reliability of processing can be improved, while reducing the cost.
摘要翻译：在作为被处理基板的硅基板上形成氟碳层（步骤A）。在这样形成的碳氟化合物层上形成抗蚀剂层（步骤B）。然后，通过使抗蚀剂层通过光致抗蚀剂层曝光（步骤C）将抗蚀剂层图案化为预定的形状。使用图案化为预定形状的抗蚀剂层作为掩模来蚀刻氟碳层（步骤D）。接下来，除去作为掩模的抗蚀剂层（步骤E）。之后，使用残留的氟碳层作为掩模蚀刻硅衬底（步骤F）。由于碳氟化合物层本身作为抗反射膜和危害掩模起作用，所以可以提高处理的可靠性，同时降低成本。

6. 发明授权

US08967082B2 Plasma processing apparatus and gas supply device for plasma processing apparatus 有权
标题翻译：等离子体处理装置和等离子体处理装置的气体供给装置
公开(公告)号：US08967082B2
公开(公告)日：2015-03-03
申请号：US13496540
申请日：2010-09-14
申请人： Masahide Iwasaki , Toshihisa Nozawa
发明人： Masahide Iwasaki , Toshihisa Nozawa
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H01L21/02 , C23C16/455 , H01L21/28
CPC分类号： H01L21/02274 , C23C16/45517 , C23C16/45536 , H01L21/02164 , H01L21/0217 , H01L21/0228 , H01L21/28194
摘要： A plasma processing apparatus 31 includes a processing chamber 32; a gas supply unit 33 for supplying a plasma processing gas into a processing chamber 32; a mounting table 34 configured to hold the target substrate W thereon; a plasma generating device 39 configured to generate plasma within the processing chamber 32; and a gas supply device 61. The gas supply device 61 includes a head unit 62 configured to move between a first position above the mounting table 34 and a second position different from the first position and to supply a gas, and the head unit 62 is configured to supply a film forming gas to a small-volume region formed between the mounting table 34 and the head unit 62 when the head unit 62 is positioned at the first position and to adsorb the film forming gas on the target substrate W.
摘要翻译：等离子体处理装置31包括处理室32; 用于将等离子体处理气体供给到处理室32中的气体供给单元33; 配置成将目标基板W保持在其上的安装台34; 构造成在处理室32内产生等离子体的等离子体产生装置39; 气体供给装置61.气体供给装置61包括头单元62，其构造成在安装台34上方的第一位置和与第一位置不同的第二位置之间移动并供给气体，头单元62为构造成当头单元62位于第一位置时，将成膜气体供给到形成在安装台34和头单元62之间的小体积区域，并将成膜气体吸附在目标基板W上。

7. 发明授权

US08915999B2 Shower plate sintered integrally with gas release hole member and method for manufacturing the same 有权
标题翻译：与气体释放孔构件一体烧结的淋浴板及其制造方法
公开(公告)号：US08915999B2
公开(公告)日：2014-12-23
申请号：US12446913
申请日：2007-09-26
申请人： Masahiro Okesaku , Tadahiro Ohmi , Tetsuya Goto , Takaaki Matsuoka , Toshihisa Nozawa , Atsutoshi Inokuchi , Kiyotaka Ishibashi
发明人： Masahiro Okesaku , Tadahiro Ohmi , Tetsuya Goto , Takaaki Matsuoka , Toshihisa Nozawa , Atsutoshi Inokuchi , Kiyotaka Ishibashi
IPC分类号： C23C16/455 , H01J37/32 , H01L21/3065
CPC分类号： H01J37/3244 , C23C16/45565 , C23C16/45568 , H01J37/32192 , H01J37/32449 , H01J37/32477 , H01J37/3255
摘要： A shower plate is disposed in a processing chamber in a plasma processing apparatus, and plasma excitation gas is released into the processing chamber so as to generate plasma. A ceramic member having a plurality of gas release holes having a diameter of 20 μm to 70 μm, and/or a porous gas-communicating body having pores having a maximum diameter of not more than 75 μm communicating in the gas-communicating direction are sintered and bonded integrally with the inside of each of a plurality of vertical holes which act as release paths for the plasma excitation gas.
摘要翻译：喷淋板设置在等离子体处理装置的处理室中，等离子体激发气体释放到处理室中以产生等离子体。具有多个直径为20μm至70μm的气体释放孔的陶瓷构件和/或具有气体连通方向上连通的最大直径不大于75μm的孔的多孔气体连通体被烧结并且与用作等离子体激发气体的释放路径的多个垂直孔的每一个的内部一体地结合。

8. 发明申请

US20130302992A1 APPARATUS FOR PLASMA TREATMENT AND METHOD FOR PLASMA TREATMENT 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US20130302992A1
公开(公告)日：2013-11-14
申请号：US13885708
申请日：2011-11-16
申请人： Toshihisa Nozawa , Caizhong Tian , Masaru Sasaki , Naoki Mihara , Naoki Matsumoto , Kazuki Moyama , Jun Yoshikawa
发明人： Toshihisa Nozawa , Caizhong Tian , Masaru Sasaki , Naoki Mihara , Naoki Matsumoto , Kazuki Moyama , Jun Yoshikawa
IPC分类号： H05H1/46
CPC分类号： H05H1/46 , H01J37/32192 , H01J37/32211 , H01J37/3244
摘要： An apparatus for plasma treatment contains a process vessel provided with a mounting table for mounting a substrate, a first gas supplying unit configured to supply a first gas into the process vessel, a first plasma generating unit configured to convert at least a part of the first gas to a first plasma, a second gas supplying unit configured to supply a second gas into the process vessel, and a second plasma generating unit configured to convert at least a part of the second gas to a second plasma. A height of ea an inlet of the second gas from the mounting table is lower than a height of an inlet of the first gas from the mounting table.
摘要翻译：一种用于等离子体处理的装置，包括设置有用于安装基板的安装台的处理容器，构造成将第一气体供应到处理容器中的第一气体供给单元，第一等离子体产生单元，其被配置为将第一第二气体供给单元，被配置为将第二气体供应到处理容器中;第二等离子体产生单元，被配置为将至少一部分第二气体转化为第二等离子体。来自安装台的第二气体的入口的高度低于来自安装台的第一气体的入口的高度。

9. 发明申请

US20120186521A1 PLASMA PROCESSING APPARATUS AND GAS SUPPLY DEVICE FOR PLASMA PROCESSING APPARATUS 有权
标题翻译：等离子体处理装置的等离子体加工装置和气体供应装置
公开(公告)号：US20120186521A1
公开(公告)日：2012-07-26
申请号：US13496540
申请日：2010-09-14
申请人： Masahide Iwasaki , Toshihisa Nozawa
发明人： Masahide Iwasaki , Toshihisa Nozawa
IPC分类号： C23C16/50 , C23C16/511
CPC分类号： H01L21/02274 , C23C16/45517 , C23C16/45536 , H01L21/02164 , H01L21/0217 , H01L21/0228 , H01L21/28194
摘要： A plasma processing apparatus 31 includes a processing chamber 32; a gas supply unit 33 for supplying a plasma processing gas into a processing chamber 32; a mounting table 34 configured to hold the target substrate W thereon; a plasma generating device 39 configured to generate plasma within the processing chamber 32; and a gas supply device 61. The gas supply device 61 includes a head unit 62 configured to move between a first position above the mounting table 34 and a second position different from the first position and to supply a gas, and the head unit 62 is configured to supply a film forming gas to a small-volume region formed between the mounting table 34 and the head unit 62 when the head unit 62 is positioned at the first position and to adsorb the film forming gas on the target substrate W.
摘要翻译：等离子体处理装置31包括处理室32; 用于将等离子体处理气体供给到处理室32中的气体供给单元33; 配置成将目标基板W保持在其上的安装台34; 构造成在处理室32内产生等离子体的等离子体产生装置39; 气体供给装置61.气体供给装置61包括头单元62，其构造成在安装台34上方的第一位置和与第一位置不同的第二位置之间移动并供给气体，头单元62为构造成当头单元62位于第一位置时，将成膜气体供给到形成在安装台34和头单元62之间的小体积区域，并将成膜气体吸附在目标基板W上。

10. 发明申请

US20120111427A1 PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD, METHOD FOR CLEANING PLASMA PROCESSING APPARATUS AND PRESSURE CONTROL VALVE FOR PLASMA PROCESSING APPARATUS 有权
标题翻译：等离子体处理装置，等离子体处理方法，等离子体处理装置的清洗方法和等离子体处理装置的压力控制阀
公开(公告)号：US20120111427A1
公开(公告)日：2012-05-10
申请号：US13061356
申请日：2009-08-27
申请人： Toshihisa Nozawa , Shinji Komoto , Masahide Iwasaki
发明人： Toshihisa Nozawa , Shinji Komoto , Masahide Iwasaki
IPC分类号： F16K15/00 , B08B5/00
CPC分类号： C23C16/4412 , C23C16/50 , C23C16/511 , C23C16/52 , H01J37/3244 , H01J37/32449 , H01J37/32834 , H01J37/32862 , Y10T137/7837
摘要： A plasma processing apparatus is provided with a first exhaust path which extends downward from an exhaust hole; a second exhaust path which is connected to a downstream end portion of the first exhaust path in the exhausting direction and extends in a direction perpendicular to a direction in which the first exhaust path extends, and whose cross-section, which orthogonally intersects with the exhausting direction, is horizontally long such that a widthwise length is greater than a vertical length in the cross-section; a third exhaust path which is connected to a downstream end portion of the second exhaust path in the exhausting direction and extends in a direction perpendicular to the direction in which the second exhaust path extends; a pump which is connected to a downstream end portion of the third exhaust path in the exhausting direction and depressurizes an inside of a processing container; a pressure control valve which is provided in the second exhaust path, and comprises a pressure control valve plate which is capable of closing the second exhaust path and controls a pressure at upstream and downstream sides in the exhausting direction; and a shut-off valve which is provided in the third exhaust path and comprises a shut-off valve plate which opens and closes the third exhaust path.
摘要翻译：等离子体处理装置设置有从排气孔向下延伸的第一排气路径; 第二排气通道，其沿着排气方向连接到第一排气通路的下游端部，并且沿与第一排气通路延伸的方向垂直的方向延伸，其横截面与排气通道方向为水平长，使得宽度方向长度大于横截面中的垂直长度; 第三排气路径，其沿排气方向连接到第二排气路径的下游端部，并且沿与第二排气通路延伸的方向垂直的方向延伸; 泵，其在排气方向上连接到第三排气路径的下游端部，并且减压处理容器的内部; 设置在第二排气路径中的压力控制阀，包括能够关闭第二排气通路并控制排气方向上游侧和下游侧的压力的压力控制阀板; 以及截止阀，其设置在所述第三排气路径中并且包括打开和关闭所述第三排气路径的截止阀板。

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