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1. 发明申请

US20060156984A1 Plasma processing apparatus and plasma processing method 审中-公开
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US20060156984A1
公开(公告)日：2006-07-20
申请号：US11288336
申请日：2005-11-29
申请人： Toshihisa Nozawa , Kiyotaka Ishibashi , Toshio Nakanishi
发明人： Toshihisa Nozawa , Kiyotaka Ishibashi , Toshio Nakanishi
IPC分类号： C23C16/00 , C23C14/00
CPC分类号： H01J37/32266 , H01J37/32192 , H01J2237/332 , H01L21/3065
摘要： To enable suitable plasma processing with reduced damage to a processing target ascribable to plasma generation. In a plasma processing apparatus including at least: a plasma processing chamber in which plasma processing is applied to a processing target; a processing target supporting means for setting the processing target in the plasma processing chamber; and a plasma generating means for generating a plasma in the plasma processing chamber, the present invention uses the plasma generating means that is capable of supplying intermittent energy.
摘要翻译：为了实现等离子体处理，能够降低对归因于等离子体产生的处理目标的损伤。一种等离子体处理装置，其至少包括：对处理对象物施加等离子体处理的等离子体处理室; 处理目标支持装置，用于设置等离子体处理室中的处理目标; 以及用于在等离子体处理室中产生等离子体的等离子体产生装置，本发明使用能够提供间歇能量的等离子体产生装置。

2. 发明授权

US08915999B2 Shower plate sintered integrally with gas release hole member and method for manufacturing the same 有权
标题翻译：与气体释放孔构件一体烧结的淋浴板及其制造方法
公开(公告)号：US08915999B2
公开(公告)日：2014-12-23
申请号：US12446913
申请日：2007-09-26
申请人： Masahiro Okesaku , Tadahiro Ohmi , Tetsuya Goto , Takaaki Matsuoka , Toshihisa Nozawa , Atsutoshi Inokuchi , Kiyotaka Ishibashi
发明人： Masahiro Okesaku , Tadahiro Ohmi , Tetsuya Goto , Takaaki Matsuoka , Toshihisa Nozawa , Atsutoshi Inokuchi , Kiyotaka Ishibashi
IPC分类号： C23C16/455 , H01J37/32 , H01L21/3065
CPC分类号： H01J37/3244 , C23C16/45565 , C23C16/45568 , H01J37/32192 , H01J37/32449 , H01J37/32477 , H01J37/3255
摘要： A shower plate is disposed in a processing chamber in a plasma processing apparatus, and plasma excitation gas is released into the processing chamber so as to generate plasma. A ceramic member having a plurality of gas release holes having a diameter of 20 μm to 70 μm, and/or a porous gas-communicating body having pores having a maximum diameter of not more than 75 μm communicating in the gas-communicating direction are sintered and bonded integrally with the inside of each of a plurality of vertical holes which act as release paths for the plasma excitation gas.
摘要翻译：喷淋板设置在等离子体处理装置的处理室中，等离子体激发气体释放到处理室中以产生等离子体。具有多个直径为20μm至70μm的气体释放孔的陶瓷构件和/或具有气体连通方向上连通的最大直径不大于75μm的孔的多孔气体连通体被烧结并且与用作等离子体激发气体的释放路径的多个垂直孔的每一个的内部一体地结合。

3. 发明授权

US07940009B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US07940009B2
公开(公告)日：2011-05-10
申请号：US12274650
申请日：2008-11-20
申请人： Kiyotaka Ishibashi , Toshihisa Nozawa
发明人： Kiyotaka Ishibashi , Toshihisa Nozawa
IPC分类号： H01B31/26 , C23C16/00
CPC分类号： H01J37/32192 , H01J37/32238
摘要： A plasma processing apparatus includes a chamber for carrying out plasma processing inside, a top plate made of a dielectric material for sealing the upper side of this chamber, and an antenna section that serves as a high frequency supply for supplying high frequency waves into the chamber via this top plate. The top plate is provided with reflecting members inside thereof. The sidewalls of the reflecting members work as wave reflector for reflecting high frequency waves that propagate inside the top plate in the radius direction. Alternatively, no reflecting members may be provided in a manner in which the sidewalls of a recess of the top plate serve as a wave reflector means.
摘要翻译：等离子体处理装置包括用于在内部进行等离子体处理的室，由用于密封该室的上侧的电介质材料制成的顶板和用作将高频波供应到室中的高频电源的天线部分通过这个顶板。顶板在其内设有反射构件。反射部件的侧壁作为反射用于反射在顶板内部沿半径方向传播的高频波的波反射体。或者，不能以顶板的凹部的侧壁用作波反射器装置的方式设置反射部件。

4. 发明申请

US20100032094A1 CEILING PLATE AND PLASMA PROCESS APPARATUS 有权
标题翻译：天花板和等离子体工艺设备
公开(公告)号：US20100032094A1
公开(公告)日：2010-02-11
申请号：US12441429
申请日：2008-08-20
申请人： Caizhong Tian , Tetsuya Nishizuka , Kiyotaka Ishibashi , Toshihisa Nozawa
发明人： Caizhong Tian , Tetsuya Nishizuka , Kiyotaka Ishibashi , Toshihisa Nozawa
IPC分类号： H01L21/306 , C23C16/54
CPC分类号： H01L21/461 , C23C16/511 , H01J37/32192 , H01J37/3222 , H05H1/46 , Y10T428/24273
摘要： A ceiling plate provided at a ceiling portion of a process chamber that may be evacuated to a vacuum is disclosed. The ceiling plate allows microwaves emitted from a slot of a planar antenna member provided along with the ceiling plate to pass through the ceiling plate into the process chamber, and includes plural protrusion portions provided in a radial pattern on a surface of the ceiling plate, the surface facing toward an inside of the process chamber.
摘要翻译：公开了一种设置在可以被抽真空的处理室的顶部的顶板。顶棚板允许从天花板板设置的平面天线构件的槽口发射的微波通过顶板进入处理室，并且包括在天花板的表面上以放射状图案设置的多个突起部分，表面朝向处理室的内部。

5. 发明申请

US20080254220A1 Plasma processing apparatus 审中-公开
标题翻译：等离子体处理装置
公开(公告)号：US20080254220A1
公开(公告)日：2008-10-16
申请号：US12157660
申请日：2008-06-11
申请人： Caizhong Tian , Toshihisa Nozawa , Kiyotaka Ishibashi
发明人： Caizhong Tian , Toshihisa Nozawa , Kiyotaka Ishibashi
IPC分类号： B05D3/04 , C23C16/452 , H01L21/3065
CPC分类号： B32B37/12 , H01J37/32192 , H01J37/3244 , H01J37/32623 , H01J2237/0206 , Y10T156/10
摘要： A plasma processing apparatus includes a vacuum processing container, and a placing table for placing an object which is arranged in the container and is to be processed. The processing container includes a tubular container body having an upper opening, and a dielectric top plate attached hermetically to the upper opening of the body and transmitting an electromagnetic wave. The plasma processing apparatus further includes an electromagnetic wave supplying system for supplying an electromagnetic wave for generating plasma into the container through the top plate, and a gas supplying system for supplying a gas containing a processing gas into the container. A gas ejecting hole for ejecting the gas supplied from the gas supplying system into the container is formed on the top plate. A discharge prevention member having a permeability is arranged in each ejection hole.
摘要翻译：等离子体处理装置包括真空处理容器和放置在容器内并被处理的物体的放置台。处理容器包括具有上开口的管状容器主体和与主体的上开口气密连接并传输电磁波的电介质顶板。等离子体处理装置还包括电磁波供给系统，用于通过顶板将用于产生等离子体的电磁波提供到容器中;以及气体供给系统，用于将含有处理气体的气体供给到容器中。在顶板上形成用于将从供气系统供给的气体喷射到容器中的气体喷射孔。在每个喷射孔中布置具有磁导率的防止放电部件。

6. 发明申请

US20060005769A1 Plasma processing device 有权
标题翻译：等离子处理装置
公开(公告)号：US20060005769A1
公开(公告)日：2006-01-12
申请号：US10524038
申请日：2003-08-12
申请人： Kiyotaka Ishibashi , Toshihisa Nozawa
发明人： Kiyotaka Ishibashi , Toshihisa Nozawa
IPC分类号： B05B5/025 , C23C16/00 , B05C5/02
CPC分类号： H01J37/32458 , H01J37/32192
摘要： A plasma processing device comprising a chamber (1), a high-frequency power supply and an antenna unit (3). The antenna unit (3) comprises a slot plate (3c) , a slow wave plate (3b) and an antenna cover (3a) . A top plate unit (4) having a flat plate (4a) and sidewalls (4b) is disposed at the upper portion of the chamber (1). The flat plate (4a) contacts the slot plate (3c) disposed to face a housed substrate (11). The sidewalls (4b) are formed so as to extend toward a substrate-disposed side from the periphery of the flat plate (4a) . The outer periphery surfaces of sidewalls (4b) contact the chamber (1). The thickness of the sidewalls (4b) is set to be at least λg/4, where λg is the wavelength of a microwave based on the permittivity of the top plate (4). Accordingly, a plasma density can be further increased and a uniformity in plasma density distribution can be improved.
摘要翻译：一种等离子体处理装置，包括室（1），高频电源和天线单元（3）。天线单元（3）包括槽板（3c），慢波板（3b）和天线罩（3a）。具有平板（4a）和侧壁（4b）的顶板单元（4）设置在室（1）的上部。平板（4a）接触与被容纳的基板（11）相对设置的槽板（3c）。侧壁（4b）形成为从平板（4a）的周边朝向基板设置侧延伸。侧壁（4b）的外周表面与腔室（1）接触。侧壁（4b）的厚度被设定为至少λλ/ 4，其中λ是基于顶部介电常数的微波的波长板（4）。因此，可以进一步提高等离子体密度，并且可以提高等离子体密度分布的均匀性。

7. 发明授权

US09177846B2 Placing bed structure, treating apparatus using the structure, and method for using the apparatus 有权
标题翻译：放置床结构，使用该结构的处理装置以及使用该装置的方法
公开(公告)号：US09177846B2
公开(公告)日：2015-11-03
申请号：US12526460
申请日：2008-02-04
申请人： Kohei Kawamura , Yasuo Kobayashi , Toshihisa Nozawa , Kiyotaka Ishibashi
发明人： Kohei Kawamura , Yasuo Kobayashi , Toshihisa Nozawa , Kiyotaka Ishibashi
IPC分类号： H01L21/3065 , C23C16/513 , H01L21/683 , C23C16/458 , H01L21/687
CPC分类号： H01L21/68742 , C23C16/455 , C23C16/458 , C23C16/4585 , C23C16/4586 , C23C16/50 , H01J37/3244 , H01L21/6831 , H01L21/6833 , H01L21/68735 , H01L21/6875
摘要： Provided is a holding stage structure which holds a substrate and disposed in a process chamber that is vacuum-evacuatable and allows a predetermined process to be performed on the substrate therein. The holding stage structure includes: a holding stage body on which the substrate is placed; an elevation pin mechanism lowering the substrate on the holding stage body or raising the substrate from the holding stage body; and a stepped portion formed on the holding stage body so that a peripheral portion of a rear surface of the substrate placed on the holding stage body is exposed to a processing gas supplied into the process chamber.
摘要翻译：提供一种保持台结构，其保持基板并且设置在真空可抽真空的处理室中，并且允许在其中对基板进行预定的处理。保持台结构包括：放置基板的保持台体; 升降销机构，其使保持台体上的基板降低，或者使保持台体上升基板; 以及形成在保持台体上的台阶部分，使得放置在保持台体上的基板的后表面的周边部分暴露于供给到处理室中的处理气体。

8. 发明授权

US08967080B2 Top plate of microwave plasma processing apparatus, plasma processing apparatus and plasma processing method 有权
标题翻译：微波等离子体处理装置，等离子体处理装置和等离子体处理方法的顶板
公开(公告)号：US08967080B2
公开(公告)日：2015-03-03
申请号：US12867343
申请日：2009-02-10
申请人： Caizhong Tian , Kiyotaka Ishibashi , Toshihisa Nozawa
发明人： Caizhong Tian , Kiyotaka Ishibashi , Toshihisa Nozawa
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H05H1/46 , H01J37/32
CPC分类号： H05H1/46 , H01J37/32192 , H01J37/32211 , H01J37/3222 , H01J37/32238
摘要： A plasma generation chamber of a plasma processing apparatus is closed by a top plate 3. The top plate 3 has recesses 3A on its surface facing the plasma generation chamber and a central recess 3B on an opposite surface. The top plate 3 is coupled to an antenna thereon. If a microwave is supplied to the antenna, the microwave is radiated through slots of the antenna. The microwave is propagated through the top plate 3 such that the microwave has a plane of polarization and the microwave forms a circularly polarized wave as a whole. Here, resonance absorption of the microwave occurs at a side surface of recesses 3A and the microwave is propagated within the recesses 3A in a single mode. Strong plasma can be generated within each of the recesses 3A, so that a stable plasma mode can be generated in the top plate 3.
摘要翻译：等离子体处理装置的等离子体生成室由顶板3封闭。顶板3在其表面上具有面向等离子体产生室的凹部3A和相对表面上的中心凹部3B。顶板3与天线耦合。如果向天线提供微波，则微波通过天线的狭槽辐射。微波通过顶板3传播，使得微波具有偏振面，微波整体形成圆偏振波。这里，微波的共振吸收发生在凹部3A的侧面，微波在单个模式下在凹部3A内传播。可以在每个凹部3A内产生强等离子体，从而可以在顶板3中产生稳定的等离子体模式。

9. 发明授权

US08387560B2 Plasma processing unit 有权
标题翻译：等离子处理装置
公开(公告)号：US08387560B2
公开(公告)日：2013-03-05
申请号：US11632779
申请日：2005-07-21
申请人： Caizhong Tian , Kiyotaka Ishibashi , Junichi Kitagawa , Toshihisa Nozawa
发明人： Caizhong Tian , Kiyotaka Ishibashi , Junichi Kitagawa , Toshihisa Nozawa
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H05H1/46 , H01J37/32192 , H01J37/32211
摘要： The present invention provides a plasma processing unit comprising: a processing vessel having an opening on a ceiling side thereof, and capable of creating a vacuum therein; a stage disposed in the processing vessel, for placing thereon an object to be processed; a top plate made of a dielectric, the top plate being hermetically fitted in the opening and allowing a microwave to pass therethrough; a planar antenna member disposed on the top plate, the planar antenna member being provided with a plurality of microwave radiating holes for radiating a microwave for plasma generation toward an inside of the processing vessel; a slow-wave member disposed on the planar antenna member, for shortening a wavelength of a microwave; and a microwave interference restraining part disposed on a lower surface of the top plate, the microwave interference restraining part separating the lower surface into a plurality of concentric zones and restraining a microwave interference between the zones.
摘要翻译：本发明提供一种等离子体处理单元，包括：处理容器，其顶部具有开口，能够在其中产生真空; 设置在处理容器中的用于在其上放置待处理物体的台阶; 由电介质制成的顶板，顶板气密地装配在开口中并允许微波通过; 平面天线部件，其设置在所述顶板上，所述平面天线部件设置有多个微波辐射孔，用于朝向所述处理容器的内部放射用于等离子体产生的微波; 设置在所述平面天线构件上的慢波构件，用于缩短微波的波长; 以及微波干扰抑制部，其设置在所述顶板的下表面上，所述微波干涉抑制部将所述下表面分割为多个同心区域，并抑制所述区域之间的微波干扰。

10. 发明授权

US08343308B2 Ceiling plate and plasma process apparatus 有权
标题翻译：天花板和等离子体处理装置
公开(公告)号：US08343308B2
公开(公告)日：2013-01-01
申请号：US12441429
申请日：2008-08-20
申请人： Caizhong Tian , Tetsuya Nishizuka , Kiyotaka Ishibashi , Toshihisa Nozawa
发明人： Caizhong Tian , Tetsuya Nishizuka , Kiyotaka Ishibashi , Toshihisa Nozawa
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01L21/461 , C23C16/511 , H01J37/32192 , H01J37/3222 , H05H1/46 , Y10T428/24273
摘要： A ceiling plate provided at a ceiling portion of a process chamber that may be evacuated to a vacuum is disclosed. The ceiling plate allows microwaves emitted from a slot of a planar antenna member provided along with the ceiling plate to pass through the ceiling plate into the process chamber, and includes plural concave portions provided along a circle on a surface of the ceiling plate, the surface facing toward an inside of the process chamber.
摘要翻译：公开了一种设置在可以被抽真空的处理室的顶部的顶板。顶板允许从天花板板一侧设置的平面天线构件的槽口发出的微波通过顶板进入处理室，并且包括沿着顶板的表面沿着圆形设置的多个凹部，面向处理室的内部。

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