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1. 发明授权

US06761945B1 Electrolyte tank and manufacturing method thereof 有权
标题翻译：电解槽及其制造方法
公开(公告)号：US06761945B1
公开(公告)日：2004-07-13
申请号：US09418315
申请日：1999-10-14
申请人： Toshihisa Adachi , Takefumi Itou , Toshihiko Takiguchi , Nobuyuki Tokuda
发明人： Toshihisa Adachi , Takefumi Itou , Toshihiko Takiguchi , Nobuyuki Tokuda
IPC分类号： B65G500
CPC分类号： H01M8/188 , H01M8/02 , H01M8/04186 , Y02E60/528 , Y02P70/56 , Y10T428/1362
摘要： An electrolyte tank which allows effective use of existing space of various shapes is provided. An electrolyte tank is formed by laminating one or more layers of coated fabric provided by coating a woven fabric of organic fiber with rubber or plastic and processing the laminated coated fabric to a bag-shape.
摘要翻译：提供一种可有效利用各种形状的现有空间的电解槽。通过将通过用有机纤维的织物涂布橡胶或塑料提供的一层或多层涂布织物层压并将层压的涂布织物加工成袋状形成电解槽。

2. 发明授权

US5248351A Copper Ni-Si-P alloy for an electronic device 失效
标题翻译：用于电子器件的铜镍硅合金
公开(公告)号：US5248351A
公开(公告)日：1993-09-28
申请号：US835082
申请日：1992-02-18
申请人： Kenji Kubozono , Takashi Nakagima , Takefumi Itou , Kimio Hashizume , Shinichi Iwase
发明人： Kenji Kubozono , Takashi Nakagima , Takefumi Itou , Kimio Hashizume , Shinichi Iwase
IPC分类号： C22C9/06 , H01L21/48 , H01L23/495
CPC分类号： H01L23/49579 , C22C9/06 , H01L21/4821 , H01L2924/00011 , H01L2924/0002 , H01L2924/01015
摘要： A copper alloy for an electronic device comprises 2.0 wt% -8 wt% of Ni, 0.1 wt% -0.8 wt% of P, 0.06 wt% -1 wt% of Si and the rest being Cu and unavoidable impurities.The rest may include 0.03 wt% -2.0 wt% of Zn. The copper allow has an oxygen content of 20 ppm or less.
摘要翻译：用于电子器件的铜合金包括2.0重量％-8重量％的Ni，0.1重量％-0.8重量％的P，0.06重量％-1重量％的Si，其余为Cu和不可避免的杂质。其余的可以包括0.03wt％-2.0wt％的Zn。铜允许的氧含量为20ppm以下。

3. 发明授权

US5064611A Process for producing copper alloy 失效
标题翻译：铜合金生产工艺
公开(公告)号：US5064611A
公开(公告)日：1991-11-12
申请号：US642353
申请日：1991-01-17
申请人： Kimio Hashizume , Keizo Kitakaze , Takefumi Itou
发明人： Kimio Hashizume , Keizo Kitakaze , Takefumi Itou
IPC分类号： B22D11/06 , B22D11/00 , C22C9/06
CPC分类号： B22D11/00
摘要： An improved method for producing a copper alloy, wherein a molten metal consisting essentially of 1.0 to 8% by weight of Ni, 0.1 to 0.8% by weight of P, 0.06 to 1.0% by weight of Si, and a remainder of Cu and unavoidable impurities (or a molten metal consisting essentially of 1.0 to 8% by weight of Ni, 0.1 to 0.8% by weight of P, 0.06 to 1.0% by weight of Si, 0.03 to 0.5% by weight of Zn, and a remainder of Cu and unavoidable impurities) is quenched to solidify, at a cooling rate in the range from 10.sup.2 .degree. C./sec. to 10.sup.5 .degree. C./sec., and continuously cooling in succession said solidified metal to a normal temperature, to cause an intermetallic compound of Ni-P and Ni-Si to be finely and uniformly dispersed into the matrix material.
摘要翻译：一种改进的铜合金的制造方法，其中基本上由1.0〜8重量％的Ni，0.1〜0.8重量％的P，0.06〜1.0重量％的Si，余量的Cu和不可避免地组成的熔融金属杂质（或基本上由1.0〜8重量％的Ni，0.1〜0.8重量％的P，0.06〜1.0重量％的Si，0.03〜0.5重量％的Zn和余量的Cu组成的熔融金属和不可避免的杂质）以102℃/秒的冷却速率淬火固化。至105℃/秒，连续地将所述固化金属连续冷却至常温，使Ni-P和Ni-Si的金属间化合物精细均匀地分散在基体材料中。

4. 发明授权

US4950451A Copper alloy for an electronic device and method of preparing the same 失效
标题翻译：电子器件用铜合金及其制备方法
公开(公告)号：US4950451A
公开(公告)日：1990-08-21
申请号：US326645
申请日：1989-03-21
申请人： Takashi Nakajima , Kenji Kubozono , Takefumi Itou , Kimio Hashizume , Shinichi Iwase
发明人： Takashi Nakajima , Kenji Kubozono , Takefumi Itou , Kimio Hashizume , Shinichi Iwase
IPC分类号： C22C9/04 , C22C9/06
CPC分类号： C22C9/06 , C22C9/04
摘要： A copper alloy for an electronic device comprises 1.0 wt %-4.0 wt % of Ni, more than 0.2 wt % and less than 0.8 wt % of P, 0.5 wt %-6.0 wt % of Zn and the rest being copper and unavoidable impurities. The rest may include 0.05 wt %-1.0 wt % of Mg.A wire of the above-mentioned copper alloy is prepared by heating the copper alloy having the composition described above at temperature of 750.degree. C.-950.degree. C. for more than one minute before the final rolling operation, and then, heating the material at a temperature of 350.degree. C.-500.degree. C., or slowly cooling it at a rate of 4.degree. C./min. or less, or cooling it at a rate of 1.degree. C./min. or more until temperature reaches 500.degree. C. and keeping its temperature for at least one hour in a temperature range of 500.degree. C.-350.degree. C.
摘要翻译：用于电子器件的铜合金包括1.0重量％-4.0重量％的Ni，大于0.2重量％且小于0.8重量％的P，0.5重量％-6.0重量％的Zn，其余为铜和不可避免的杂质。其余的可以包括0.05wt％-1.0wt％的Mg。通过在最终轧制操作之前将具有上述组成的铜合金在750℃-950℃的温度下加热超过1分钟来制备上述铜合金的线材，然后加热材料在350℃-500℃的温度下，或以4℃/ min的速度缓慢冷却。或更低，或以1℃/ min的速率冷却。或更高，直到温度达到500℃，并将其温度保持在500℃-350℃的温度范围内至少1小时。

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