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1. 发明授权

US07189427B2 Manufacturing method of an image forming apparatus 失效
标题翻译：图像形成装置的制造方法
公开(公告)号：US07189427B2
公开(公告)日：2007-03-13
申请号：US10774583
申请日：2004-02-10
申请人： Toshihiko Takeda , Masaru Kamio , Masataka Yamashita , Yasue Sato , Hitoshi Oda , Keisuke Yamamoto , Miki Tamura , Hideshi Kawasaki , Kazuhiro Jindai
发明人： Toshihiko Takeda , Masaru Kamio , Masataka Yamashita , Yasue Sato , Hitoshi Oda , Keisuke Yamamoto , Miki Tamura , Hideshi Kawasaki , Kazuhiro Jindai
IPC分类号： B05D5/06
CPC分类号： H01J9/027
摘要： This invention provides an electron source manufacturing apparatus which can be easily downsized and operated. The electron source manufacturing apparatus includes a support member for supporting a substrate (10) having a conductor (11), a vessel (12) which has a gas inlet port (15) and a gas exhaust port (16) and covers a partial region of the surface of the substrate (10); a gas inlet unit (24) connected to the gas inlet port (15) to introduce gas into the vessel, an exhaust unit (26) connected to the gas exhaust port to evacuate the interior of the vessel, and a voltage application unit (32) for applying a voltage to the conductor.
摘要翻译：本发明提供一种电子源制造装置，其可以容易地小型化和操作。电子源制造装置包括用于支撑具有导体（11）的基板（10）的支撑构件，具有气体入口（15）和排气口（16）的容器（12），并且覆盖部分区域的基板（10）的表面; 连接到气体入口（15）以将气体引入容器的气体入口单元（24），连接到排气口以抽空容器内部的排气单元（26），以及电压施加单元（32）），用于向导体施加电压。

2. 发明授权

US06726520B2 Apparatus for producing electron source 失效
标题翻译：用于生产电子源的装置
公开(公告)号：US06726520B2
公开(公告)日：2004-04-27
申请号：US09788411
申请日：2001-02-21
申请人： Toshihiko Takeda , Masaru Kamio , Masataka Yamashita , Yasue Sato , Hitoshi Oda , Keisuke Yamamoto , Miki Tamura , Hideshi Kawasaki , Kazuhiro Jindai
发明人： Toshihiko Takeda , Masaru Kamio , Masataka Yamashita , Yasue Sato , Hitoshi Oda , Keisuke Yamamoto , Miki Tamura , Hideshi Kawasaki , Kazuhiro Jindai
IPC分类号： H01B902
CPC分类号： H01J9/027
摘要： This invention provides an electron source manufacturing apparatus which can be easily downsized and operated. The electron source manufacturing apparatus includes a support member for supporting a substrate (10) having a conductor (11), a vessel (12) which has a gas inlet port (15) and a gas exhaust port (16) and covers a partial region of the surface of the substrate (10); a gas inlet unit (24) connected to the gas inlet port (15) to introduce gas into the vessel, an exhaust unit (26) connected to the gas exhaust port to evacuate the interior of the vessel, and a voltage application unit (32) for applying a voltage to the conductor.
摘要翻译：本发明提供一种电子源制造装置，其可以容易地小型化和操作。电子源制造装置包括用于支撑具有导体（11）的基板（10）的支撑构件，具有气体入口（15）和排气口（16）的容器（12），并且覆盖部分区域的基板（10）的表面; 连接到气体入口（15）以将气体引入容器的气体入口单元（24），连接到排气口以抽空容器内部的排气单元（26），以及电压施加单元（32）），用于向导体施加电压。

3. 发明申请

US20070279404A1 SEMICONDUCTOR INTEGRATED CIRCUIT, LIQUID CRYSTAL DRIVE DEVICE, AND LIQUID CRYSTAL DISPLAY SYSTEM 审中-公开
公开(公告)号：US20070279404A1
公开(公告)日：2007-12-06
申请号：US11833728
申请日：2007-08-03
申请人： Arata Kinjo , Kazuo Ookado , Kouichi Kotera , Hitoshi Oda , Masuhiro Endo
发明人： Arata Kinjo , Kazuo Ookado , Kouichi Kotera , Hitoshi Oda , Masuhiro Endo
IPC分类号： G09G5/00
CPC分类号： G09G3/3688 , G09G3/3611 , G09G3/3696 , G09G2310/027 , G09G2310/0297 , G09G2330/02 , G09G2330/021 , G09G2330/022 , G09G2330/06 , G09G2360/02 , G09G2370/08
摘要： A liquid crystal drive device having a differential-type input circuit including a differential amplification stage for receiving a differential signal and a buffer stage for generating an output signal on the basis of an output of the differential amplification stage, the liquid crystal drive device for receiving a signal of display data via the input circuit and outputting a signal for driving a liquid crystal panel on the basis of the display data, wherein a liquid crystal driving voltage VLCD larger than a power supply voltage VCC for logic to be supplied to the operation voltage buffer stage is supplied to the differential amplification stage of the input circuit. A standby function of interrupting an operation current of the differential amplification stage in a period where no display data is received is provided.

4. 发明申请

US20070279357A1 SEMICONDUCTOR INTEGRATED CIRCUIT, LIQUID CRYSTAL DRIVE DEVICE, AND LIQUID CRYSTAL DISPLAY SYSTEM 审中-公开
公开(公告)号：US20070279357A1
公开(公告)日：2007-12-06
申请号：US11833519
申请日：2007-08-03
申请人： Arata Kinjo , Kazuo Ookado , Kouichi Kotera , Hitoshi Oda , Masuhiro Endo
发明人： Arata Kinjo , Kazuo Ookado , Kouichi Kotera , Hitoshi Oda , Masuhiro Endo
IPC分类号： G09G3/36
CPC分类号： G09G3/3688 , G09G3/3611 , G09G3/3696 , G09G2310/027 , G09G2310/0297 , G09G2330/02 , G09G2330/021 , G09G2330/022 , G09G2330/06 , G09G2360/02 , G09G2370/08
摘要： A liquid crystal drive device having a differential-type input circuit including a differential amplification stage for receiving a differential signal and a buffer stage for generating an output signal on the basis of an output of the differential amplification stage, the liquid crystal drive device for receiving a signal of display data via the input circuit and outputting a signal for driving a liquid crystal panel on the basis of the display data, wherein a liquid crystal driving voltage VLCD larger than a power supply voltage VCC for logic to be supplied to the operation voltage buffer stage is supplied to the differential amplification stage of the input circuit. A standby function of interrupting an operation current of the differential amplification stage in a period where no display data is received is provided.

5. 发明授权

US5173955A Magnetooptic device and its driving method 失效
标题翻译：磁光装置及其驱动方法
公开(公告)号：US5173955A
公开(公告)日：1992-12-22
申请号：US658328
申请日：1991-02-20
申请人： Masamichi Yamanishi , Hitoshi Oda
发明人： Masamichi Yamanishi , Hitoshi Oda
IPC分类号： G02F1/095 , G11B11/105 , G11C7/00 , H01S5/026
CPC分类号： G11C7/005 , G02F1/0955 , G11B11/10584 , G11B11/10589 , H01S5/026
摘要： There is provided a magnetooptic device including a substrate; a semiconductor layer having a quantum well structure formed on the substrate, in which the semiconductor layer is formed by alternately laminating a well layer and a barrier layer and at least the barrier layer in those layers contains magnetic ions; and electrodes to apply an electric field to the semiconductor layer. A light which was polarized in a predetermined direction is input to the semiconductor layer. A magnetic field is applied to the semiconductor layer. An electric field is applied to the semiconductor layer by the electrodes. The light which was transmitted in the semiconductor layer is extracted. A degree of leakage of a wave function of the carrier in the well layer into the barrier layer changes. An effective magnetic field which a carrier spin feels changes by an exchange interaction between the carrier spin and a magnetic moment associated with the magnetic ions. Thus, a degree of magnetooptic effect which is given to the transmission light changes. The degree of manetooptic effect can be controlled by the applied electric field. The magnetooptic device is preferably used as an optical modulator or an optical isolator in the field of optical communications or optical memories.
摘要翻译：提供了包括基板的磁光装置; 在衬底上形成有量子阱结构的半导体层，其中半导体层通过交替层叠阱层和阻挡层而形成，并且至少这些层中的势垒层包含磁离子; 以及向半导体层施加电场的电极。沿预定方向极化的光被输入到半导体层。对半导体层施加磁场。通过电极将电场施加到半导体层。提取在半导体层中透过的光。阱层中的载流子的波函数的泄漏程度变化。通过载流子自旋与与磁离子相关的磁矩之间的交换相互作用，载流子自旋感觉到的有效磁场变化。因此，给予透射光的磁光效应程度改变。电磁效应的程度可以通过施加的电场来控制。磁光装置优选地用作光通信或光存储器领域中的光调制器或光隔离器。

6. 发明授权

US4587178A Magnetic recording medium 失效
标题翻译：磁记录介质
公开(公告)号：US4587178A
公开(公告)日：1986-05-06
申请号：US401967
申请日：1982-07-26
申请人： Shigeo Shimizu , Toshio Kato , Hitoshi Oda , Masanobu Shigeta
发明人： Shigeo Shimizu , Toshio Kato , Hitoshi Oda , Masanobu Shigeta
IPC分类号： C25D7/00 , C23C14/06 , C23C14/14 , C23C28/02 , G11B3/70 , G11B5/66 , G11B5/84 , G11B5/851
CPC分类号： G11B5/66 , G11B5/8416 , G11B5/851 , Y10S428/90 , Y10S428/928 , Y10T428/12493 , Y10T428/12535 , Y10T428/12556 , Y10T428/12569 , Y10T428/12931 , Y10T428/265
摘要： A magnetic recording medium comprising a support, a first layer formed on the support by evaporating cobalt or its alloy by an oblique-incidence vacuum evaporation technique, and a second plated layer made of cobalt or its alloy and formed by a wet plating. The cobalt alloy for the first layer substantially consists of, aside from cobalt, up to 30 wt % of Ni, Fe, Cu, W, Cr, Ru or a mixture thereof. On the other hand, the cobalt alloy for the second layer substantially consists of up to 40 wt % of Ni, up to 8 wt % of P and the balance of Co.
摘要翻译：一种磁记录介质，包括支撑体，通过倾斜入射真空蒸发技术蒸发钴或其合金而形成在支撑体上的第一层，以及由钴或其合金制成并通过湿式电镀形成的第二镀层。用于第一层的钴合金基本上由钴除外，至多30wt％的Ni，Fe，Cu，W，Cr，Ru或其混合物。另一方面，用于第二层的钴合金基本上由至多40重量％的Ni，至多8重量％的P和余量的Co组成。

7. 发明授权

US08094104B2 Semiconductor integrated circuit, liquid crystal drive device, and liquid crystal display system 有权
标题翻译：半导体集成电路，液晶驱动装置和液晶显示系统
公开(公告)号：US08094104B2
公开(公告)日：2012-01-10
申请号：US11833704
申请日：2007-08-03
申请人： Arata Kinjo , Kazuo Ookado , Kouichi Kotera , Hitoshi Oda , Masuhiro Endo
发明人： Arata Kinjo , Kazuo Ookado , Kouichi Kotera , Hitoshi Oda , Masuhiro Endo
IPC分类号： G09G3/36
CPC分类号： G09G3/3688 , G09G3/3611 , G09G3/3696 , G09G2310/027 , G09G2310/0297 , G09G2330/02 , G09G2330/021 , G09G2330/022 , G09G2330/06 , G09G2360/02 , G09G2370/08
摘要： A liquid crystal drive device having a differential-type input circuit including a differential amplification stage for receiving a differential signal and a buffer stage for generating an output signal on the basis of an output of the differential amplification stage, the liquid crystal drive device for receiving a signal of display data via the input circuit and outputting a signal for driving a liquid crystal panel on the basis of the display data, wherein a liquid crystal driving voltage VLCD larger than a power supply voltage VCC for logic to be supplied to the operation voltage buffer stage is supplied to the differential amplification stage of the input circuit. A standby function of interrupting an operation current of the differential amplification stage in a period where no display data is received is provided.
摘要翻译：一种具有差分型输入电路的液晶驱动装置，该差分型输入电路包括用于接收差分信号的差分放大级和用于基于差分放大级的输出产生输出信号的缓冲级，用于接收的液晶驱动装置经由输入电路的显示数据的信号，并且基于显示数据输出用于驱动液晶面板的信号，其中液晶驱动电压VLCD大于用于提供给操作电压的逻辑的电源电压VCC 缓冲级提供给输入电路的差分放大级。提供在不接收显示数据的期间中断差分放大级的工作电流的待机功能。

8. 发明申请

US20110111337A1 MAGNETIC CARRIER 审中-公开
标题翻译：磁性载体
公开(公告)号：US20110111337A1
公开(公告)日：2011-05-12
申请号：US12939086
申请日：2010-11-03
申请人： Juun Horie , Kenta Kubo , Tomoaki Miyazawa , Takeshi Yamamoto , Manami Haraguchi , Hirokazu Usami , Yoshinobu Baba , Koh Ishigami , Hitoshi Oda
发明人： Juun Horie , Kenta Kubo , Tomoaki Miyazawa , Takeshi Yamamoto , Manami Haraguchi , Hirokazu Usami , Yoshinobu Baba , Koh Ishigami , Hitoshi Oda
IPC分类号： G03G9/083
CPC分类号： G03G9/107 , G03G9/1075 , G03G9/113 , G03G9/1131
摘要： In the formation of images by a two-component development system, provided is a magnetic carrier that can be used to output an image which has sufficient density, in which few white spots are present in a low-density portion located near the boundary between a high-density region and a low-density region, and in which the low-density portion has good graininess. The magnetic carrier contains magnetic carrier particles each of which has resin and a magnetic particle. The magnetic particle contains ferrite phases and phases comprising a perovskite-structured compound. The ferrite phases and phases comprising a perovskite-structured compound are combined.
摘要翻译：在通过双组分显影系统形成图像时，提供了一种磁性载体，其可以用于输出具有足够密度的图像，其中位于靠近边界附近的低密度部分中存在少量白点高密度区域和低密度区域，其中低密度部分具有良好的颗粒度。磁性载体包含各自具有树脂和磁性颗粒的磁性载体颗粒。磁性颗粒含有铁素体相和包含钙钛矿结构化合物的相。组合包含钙钛矿结构化合物的铁素体相和相。

9. 发明授权

US5633512A Semiconductor device for varying the mobility of electrons by light irradiation 失效
标题翻译：用于通过光照射改变电子的迁移率的半导体器件
公开(公告)号：US5633512A
公开(公告)日：1997-05-27
申请号：US113516
申请日：1993-08-30
申请人： Masahiro Okuda , Hitoshi Oda
发明人： Masahiro Okuda , Hitoshi Oda
IPC分类号： H01L31/112 , H01L29/205
CPC分类号： H01L31/1123
摘要： A semiconductor device in which a current is controlled by light includes a semiconductor member having a source unit and a drain unit and a channel unit through which electrons may flow between the source unit and the drain unit. The channel unit has a quantum well layer having a plurality of quantum energy levels and barrier layers provided adjacent to the well layer. Upon light irradiation of the quantum well layer, electrons make transitions between the different quantum energy levels, and the current flowing between the source unit and the drain unit is controlled by varying the mobility of these transitioned electrons.
摘要翻译：其中电流被光控制的半导体器件包括具有源单元和漏极单元的半导体元件以及电子可以在源极单元和漏极单元之间流过的沟道单元。通道单元具有量子阱层，该量子阱层具有与阱层相邻设置的多个量子能级和势垒层。在量子阱层的光照射下，电子在不同的量子能级之间形成转变，并且通过改变这些转变的电子的迁移率来控制在源单元和漏极单元之间流动的电流。

10. 发明授权

US5371388A Electron wave interference devices, methods for modulating an interference current and electron wave branching and/or combining devices and methods therefor 失效
标题翻译：电波干扰装置，用于调制干扰电流的方法和电子波分支和/或组合装置及其方法
公开(公告)号：US5371388A
公开(公告)日：1994-12-06
申请号：US208196
申请日：1994-03-10
申请人： Hitoshi Oda
发明人： Hitoshi Oda
IPC分类号： H01L29/66 , H01L27/14 , H01L31/00
CPC分类号： B82Y10/00 , H01L29/66977
摘要： An electron wave interference device includes a source electrode for injecting electrons therethrough, a drain electrode for taking out electrons therethrough, channel means for propagating electrons from the source electrode to the drain electrode and a gate electrode provided on a halfway portion of the channel means between the source electrode and the drain electrode for dividing the channel means into plural channels solely in the halfway portion of the channel means. A positional relationship between the channel means and the gate electrode is set so that a depletion layer is extended under the gate electrode toward the channel means by applying a given voltage to the gate electrode. The depletion layer extended through the channel means forms an island which inhibits the propagation of electrons in the channel means and thus divides the channel means into the plural channels.
摘要翻译：电子波干涉装置包括用于注入电子的源电极，用于从其中取出电子的漏电极，用于将电子从源极传播到漏电极的通道装置和设置在通道的中途部分上的栅电极，源极电极和漏极电极，用于仅在通道装置的中途部分将通道装置分成多个通道。设置通道装置和栅电极之间的位置关系，以便通过向栅电极施加给定的电压使耗尽层在栅电极下延伸到沟道装置。通过通道装置延伸的耗尽层形成抑制通道装置中的电子传播的岛，从而将通道装置分成多个通道。

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