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1. 发明授权

US4669071A Photo sensor device and optical pickup device 失效
标题翻译：光传感器装置和光学拾取装置
公开(公告)号：US4669071A
公开(公告)日：1987-05-26
申请号：US747559
申请日：1985-06-21
申请人： Toshihiko Minami , Isao Umezawa , Kenji Shintani
发明人： Toshihiko Minami , Isao Umezawa , Kenji Shintani
IPC分类号： H01L23/50 , G02B6/42 , G11B7/08 , G11B7/09 , G11B7/12 , G11B7/13 , H01L23/48 , H01L27/14 , H01L27/144 , H01L31/02 , G11B7/00
CPC分类号： H01L27/1443 , G11B7/0903 , G11B7/12 , G11B7/13 , G11B7/0916 , H01L2224/49171
摘要： A photosensor device and an optical pickup device incorporating the photosensor device are advantageously used in an optical compact disc player of the type where the optical pickup device is driven along a path at an acute tilt angle relative to the sides of a rectangular casing. The photosensor has a plurality of photosensitive elements aligned in a first direction and a plurality of terminal leads extending parallel to each other and perpendicular to a second direction so that the photosensor may be mounted on a circuit board in a conventional configuration to save space. Within the optical pickup device, the photosensitive elements are aligned at a mounting angle which is a function of the tilt angle so that the three optical beams are received thereon in the proper orientation.
摘要翻译：光传感器装置和结合有光传感器装置的光拾取装置有利地用于光学拾取装置相对于矩形壳体的侧面以锐角倾斜的方式被驱动的光学式光盘播放器。光传感器具有沿第一方向排列的多个感光元件和彼此平行延伸并垂直于第二方向的多个端子引线，使得光传感器可以以常规配置安装在电路板上以节省空间。在光学拾取装置内，感光元件以与倾斜角的关系的安装角度对准，使得三个光束以适当的方向被接收在其上。

2. 发明授权

US4894510A Apparatus for uniformly distributing plasma over a substrate 失效
标题翻译：用于在衬底上均匀分布等离子体的装置
公开(公告)号：US4894510A
公开(公告)日：1990-01-16
申请号：US092590
申请日：1987-09-03
申请人： Koichiro Nakanishi , Hiroki Ootera , Minoru Hanazaki , Toshihiko Minami
发明人： Koichiro Nakanishi , Hiroki Ootera , Minoru Hanazaki , Toshihiko Minami
IPC分类号： H01J37/32
CPC分类号： H01J37/32623 , H01J37/3266 , H01J37/32678
摘要： In a plasma processor having a plasma generation portion which generates a plasma through electron cyclotron resonance, and a plasma reaction portion which receives therein a substrate to be processed with the plasma; the improvement comprising the fact that the plasma generation portion includes a plasma generating glass tube which can supply a plasma generating gas, an r.f. waveguide which accommodates the plasma generating glass tube and which establishes a nonuniform r.f. electric field perpendicular to an axial direction of the plasma generating portion, and a coil assembly which is arranged around the r.f. waveguide and which establishes a nonuniform magnetostatic field in the axial direction, at least a part of the magnetic field of the coil assembly being subjected to a rotational motion or a rectilinear motion.
摘要翻译：在具有通过电子回旋共振产生等离子体的等离子体产生部分的等离子体处理器和等离子体反应部分中接收等离子体处理的基板; 该改进包括等离子体产生部分包括能够提供等离子体产生气体的等离子体产生玻璃管，r.f. 波导，其容纳等离子体产生玻璃管并且建立不均匀的r.f. 垂直于等离子体产生部分的轴向的电场和围绕r.f.布置的线圈组件。并且其在轴向上建立不均匀的静磁场，线圈组件的至少一部分磁场受到旋转运动或直线运动。

3. 发明授权

US5425812A Reaction chamber for a chemical vapor deposition apparatus and a chemical vapor deposition apparatus using such a reaction chamber 失效
标题翻译：用于化学气相沉积装置的反应室和使用这种反应室的化学气相沉积装置
公开(公告)号：US5425812A
公开(公告)日：1995-06-20
申请号：US82868
申请日：1993-06-29
申请人： Koichiro Tsutahara , Toru Yamaguchi , Taizo Ejima , Toshihiko Minami , Yoshinobu Kawata
发明人： Koichiro Tsutahara , Toru Yamaguchi , Taizo Ejima , Toshihiko Minami , Yoshinobu Kawata
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , C23C16/46 , H01L21/00 , H01L21/205 , H01L21/683 , C23C16/00
CPC分类号： C23C16/45565 , C23C16/4412 , C23C16/45512 , C23C16/45561 , C23C16/4584 , C23C16/46 , H01L21/67017 , H01L21/6838
摘要： The main feature of the present invention is to provide a reaction chamber for a chemical vapor deposition apparatus improved to achieve a uniform film deposition of high accuracy stably. The apparatus includes a wafer heating stage 28 for holding a wafer 14 with the surface downwards and for heating the wafer 14. The wafer heating stage 28 rotates about the center of the stage. In a low position opposing the wafer heating stage 28, a gas supplying head 37 is provided so as to form a constant spacing region 53 for supplying reaction gas towards the wafer heating stage 28. The reaction chamber includes a reaction chamber forming member 54 surrounding in a circumferential direction the spacing region 53 between the wafer heating stage 28 and the gas supplying head 37 to establish a reaction chamber having the spacing region 53 closed. An exhaust outlet 33 is provided in the reaction chamber forming member 54 and along the whole circumference of the wafer heating stage 28, and having a configuration selected to discharge gas in the reaction chamber upwards obliquely.
摘要翻译：本发明的主要特征在于提供一种化学气相沉积装置的反应室，其能够稳定地实现高精度的均匀的膜沉积。该装置包括用于将晶片14保持在其表面向下并用于加热晶片14的晶片加热台28.晶片加热台28围绕平台的中心旋转。在与晶片加热台28相对的低位置处，设置气体供给头37，以形成用于向晶片加热台28供应反应气体的恒定间隔区域53.反应室包括反应室形成构件54，周向，晶片加热台28和气体供给头37之间的间隔区域53，以建立具有间隔区域53的反应室。排气口33设置在反应室形成构件54中并且沿着晶片加热台28的整个圆周设置，并且具有选择为向上倾斜向上倾斜反应室中的气体的构造。

4. 发明授权

US08338298B2 Method and apparatus for manufacturing semiconductor integrated circuit device 失效
标题翻译：半导体集成电路器件的制造方法及装置
公开(公告)号：US08338298B2
公开(公告)日：2012-12-25
申请号：US12556027
申请日：2009-09-09
申请人： Kazuyuki Fujii , Toshihiko Minami , Hideaki Kanazawa
发明人： Kazuyuki Fujii , Toshihiko Minami , Hideaki Kanazawa
IPC分类号： H01L21/285
CPC分类号： H01L21/28518 , C23C14/54 , C23C14/564 , H01J37/32935 , H01J37/34 , H01L21/02063 , H01L21/02074 , H01L21/67253 , H01L21/76814 , H01L21/7684 , H01L21/76846
摘要： The present inventors have found that a wafer process of VLSI (Very Large Scale Integration) has the following problem, that is, generation of foreign matters due to moisture from a wafer as a result of degassing when a barrier metal film or a first-level metal interconnect layer is formed by sputtering as a preliminary step for the formation of a tungsten plug in a pre-metal step. To overcome the problem, the present invention provides a manufacturing method of a semiconductor integrated circuit device including, in a plasma process, in-situ monitoring of moisture in a processing chamber by receiving an electromagnetic wave generated from plasma.
摘要翻译：本发明人已经发现，VLSI（超大规模集成）的晶片工艺具有以下问题，即，当阻挡金属膜或第一级别的隔离金属膜或第一级由于脱气而产生由于来自晶片的水分导致的异物通过溅射形成金属互连层，作为在金属前步骤中形成钨丝塞的预备步骤。为了克服这个问题，本发明提供一种半导体集成电路器件的制造方法，其包括在等离子体工艺中，通过接收由等离子体产生的电磁波来对处理室中的水分进行现场监测。

5. 发明授权

US5338363A Chemical vapor deposition method, and chemical vapor deposition treatment system and chemical vapor deposition apparatus therefor 失效
标题翻译：化学气相沉积法，化学气相沉积处理系统及其化学气相沉积设备
公开(公告)号：US5338363A
公开(公告)日：1994-08-16
申请号：US980971
申请日：1992-11-24
申请人： Yoshinobu Kawata , Toshihiko Minami
发明人： Yoshinobu Kawata , Toshihiko Minami
IPC分类号： C30B25/08 , C23C16/44 , C23C16/455 , C30B25/02 , C30B25/14 , H01L21/205 , H01L21/31 , C23C16/00
CPC分类号： C23C16/45565 , C23C16/45512 , C23C16/45519 , C23C16/4558 , C30B25/02 , C30B25/14
摘要： In order to prevent deposition of a reaction byproduct on the peripheries of reaction gas introduction holes, an annular inert gas injection member having a number of inert gas injection holes is provided around the reaction gas introduction holes. An inert gas is injected from inert gas injection holes toward an exhaust passage. This inert gas promotes a flow of an exhaust gas from a reaction space and forcibly flows toward the exhaust passage. Thus, a reaction byproduct contained in the exhaust gas is not remarkably deposited in the vicinity of the peripheries of the reaction gas introduction holes but quickly discharged into the exhaust passage. Thus, the reaction byproduct is hardly deposited around the reaction gas introduction holes.
摘要翻译：为了防止反应副产物沉积在反应气体导入孔的周边，具有多个惰性气体注入孔的环状惰性气体注入构件设置在反应气体导入孔的周围。从惰性气体注入孔向排气通道注入惰性气体。这种惰性气体促进来自反应空间的废气的流动并且强制地流向排气通道。因此，废气中所含的反应副产物不会在反应气体导入孔的周围附近显着沉积，而是迅速地排出到排气通道内。因此，反应副产物几乎不沉积在反应气体引入孔周围。

6. 发明授权

US5077238A Method of manufacturing a semiconductor device with a planar interlayer insulating film 失效
标题翻译：制造具有平面层间绝缘膜的半导体器件的方法
公开(公告)号：US5077238A
公开(公告)日：1991-12-31
申请号：US353892
申请日：1989-05-18
申请人： Atsuhiro Fujii , Toshihiko Minami , Hideki Genjo
发明人： Atsuhiro Fujii , Toshihiko Minami , Hideki Genjo
IPC分类号： H01L21/3105 , H01L21/311 , H01L21/312 , H01L21/768
CPC分类号： H01L21/31111 , H01L21/31055 , H01L21/312 , H01L21/76819 , H01L21/76804 , Y10S148/133 , Y10S438/98
摘要： A method of manufacturing a semiconductor device in which an element is flattened by improving a technique of forming an interlayer insulating film. A thick insulating film having a film thickness necessary for a convexo-concave pattern to be flattened is deposited on a semiconductor substrate comprising the convexo-concave pattern of an element, a wiring and the like. Then, the thick insulating film is etched until it becomes a predetermined film thickness to form an interlayer insulating film having a predetermined film thickness from said thick insulating film. At this time, since acid and water are attached on the surface of the interlayer insulating film, a new film is formed on the surface of the interlayer insulating film to cover this water and acid. Then, a resist pattern having a desired configuration is formed on this new film. A contact hole is formed on the interlayer insulating film using this resist pattern. Thereafter, a wiring pattern electrically connected to the element is formed on the interlayer insulating film through the contact hole. According to this method, since the acid and water attached on the interlayer insulating film are covered with the new film, the adhesion between the interlayer insulating film and the resist is improved. As a result, the contact hole can be opened reliably, whereby the element is surely connected to the wiring pattern and a semiconductor device can be provided with high reliability.
摘要翻译：通过改进形成层间绝缘膜的技术来制造半导体器件的方法，其中元件被平坦化。在包含元件的凸凹图形，布线等的半导体衬底上沉积具有要平坦化的凹凸图案所需的膜厚度的厚绝缘膜。然后，对厚的绝缘膜进行蚀刻，直至其变为预定的膜厚度，以从所述厚绝缘膜形成具有预定膜厚度的层间绝缘膜。此时，由于酸和水附着在层间绝缘膜的表面上，所以在层间绝缘膜的表面上形成新的膜以覆盖该水和酸。然后，在该新膜上形成具有所需结构的抗蚀剂图案。使用该抗蚀剂图案在层间绝缘膜上形成接触孔。此后，通过接触孔在层间绝缘膜上形成与元件电连接的布线图案。根据该方法，由于附着在层间绝缘膜上的酸和水被新的膜覆盖，所以层间绝缘膜和抗蚀剂之间的粘合性提高。结果，可以可靠地打开接触孔，从而元件可靠地连接到布线图案，并且可以提供高可靠性的半导体器件。

7. 发明授权

US4947085A Plasma processor 失效
标题翻译：等离子处理器
公开(公告)号：US4947085A
公开(公告)日：1990-08-07
申请号：US173147
申请日：1988-03-25
申请人： Koichiro Nakanishi , Hiroki Ootera , Minoru Hanazaki , Toshihiko Minami
发明人： Koichiro Nakanishi , Hiroki Ootera , Minoru Hanazaki , Toshihiko Minami
IPC分类号： H01J37/32
CPC分类号： H01J37/32623 , H01J37/3266 , H01J37/32678
摘要： A plasma processor wherein a substrate is processed using a plasma in a reaction gas generated through electron cyclotron resonance includes a magnetostatic field generator for generating a magnetostatic field, an electric field generator for generating an r.f. electric field perpendicular to the magnetostatic field, and a moving magnetic field generator for generating a moving magnetic field which intersects the magnetostatic field between the magnetostatic field generator and the substrate.
摘要翻译：一种等离子体处理器，其中使用通过电子回旋共振产生的反应气体中的等离子体处理衬底包括用于产生静磁场的静磁场发生器，用于产生r.f的电场发生器。垂直于静磁场的电场和用于产生与静磁场产生器和衬底之间的静磁场相交的移动磁场的移动磁场发生器。

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