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1. 发明授权

US5723383A Semiconductor substrate treatment method 失效
标题翻译：半导体衬底处理方法
公开(公告)号：US5723383A
公开(公告)日：1998-03-03
申请号：US407416
申请日：1995-03-17
申请人： Toshihiko Kosugi , Hiromu Ishii , Yoshinobu Arita
发明人： Toshihiko Kosugi , Hiromu Ishii , Yoshinobu Arita
IPC分类号： H01L21/285 , H01L21/30 , H01L21/306 , H01L21/00
CPC分类号： H01L21/02046 , H01L21/28512 , H01L21/3003
摘要： According to a semiconductor substrate treatment method, a surface or vicinity of a semiconductor substrate is deactivated by exposing the semiconductor substrate to a plasma atmosphere in which a gas containing at least hydrogen atoms is excited. A treatment is performed on the deactivated substrate surface. The treated substrate surface is activated by heating the semiconductor substrate.
摘要翻译：根据半导体衬底处理方法，通过将半导体衬底暴露于其中至少含有氢原子的气体被激发的等离子体气氛中，使半导体衬底的表面或附近失效。对失活的基材表面进行处理。经处理的基板表面通过加热半导体基板而被激活。

2. 发明授权

US4920401A Bipolar transistors 失效
标题翻译：双极晶体管
公开(公告)号：US4920401A
公开(公告)日：1990-04-24
申请号：US710950
申请日：1985-03-14
申请人： Tetsushi Sakai , Yoshizi Kobayasi , Hironori Yamauchi , Yoshinobu Arita
发明人： Tetsushi Sakai , Yoshizi Kobayasi , Hironori Yamauchi , Yoshinobu Arita
IPC分类号： H01L29/43 , H01L21/033 , H01L21/28 , H01L21/311 , H01L21/3115 , H01L21/3215 , H01L21/331 , H01L21/768 , H01L29/73 , H01L29/732
CPC分类号： H01L29/66272 , H01L21/033 , H01L21/31111 , H01L21/31155 , H01L21/32155 , H01L29/7322
摘要： In a bipolar transistor, around the border line of the surface of a base region formed on a semiconductor substrate is formed a base electrode having a constant width of less than one micron and made of polycrystalline silicon. An island shaped emitter region is formed in the base region and an emitter electrode is formed on the surface of the emitter region. The emitter electrode is electrically isolated from the base electrode by an insulating film extending between the periphery of the emitter region and the base electrode.

3. 发明授权

US5316796A Process for growing a thin metallic film 失效
标题翻译：生长薄金属薄膜的工艺
公开(公告)号：US5316796A
公开(公告)日：1994-05-31
申请号：US665610
申请日：1991-03-07
申请人： Nobuyoshi Awaya , Yoshinobu Arita
发明人： Nobuyoshi Awaya , Yoshinobu Arita
IPC分类号： C23C16/18 , C23C16/44 , C23C16/448 , C23C16/455 , C23C16/04 , C23C16/06
CPC分类号： C23C16/4557 , C23C16/18 , C23C16/4482 , C23C16/45565
摘要： A chemical vapor deposition process for growing a thin metallic film of copper or gold on a substrate includes providing a starting material composed of a .beta.-ketonato type metal complex of gold or copper in a heated container; preparing a carrier gas for the starting material which is composed of hydrogen as a reducing agent and at least one electron donating substance which bonds to and forms a molecular compound with the starting material by donating an electron to the starting material; passing a flow of the carrier gas through the heated container containing the starting material to form the molecular compound in situ and provide a flow of a gas mixture; introducing the flow of the gas mixture into a reaction chamber in which a substrate is positioned; and growing gold or copper on the substrate by thermally decomposing the molecular compound and any remaining starting material under temperature conditions effective therefor.
摘要翻译：用于在衬底上生长铜或金的薄金属膜的化学气相沉积方法包括在加热的容器中提供由β-酮型金属或铜的金属络合物组成的起始材料; 制备由氢气作为还原剂的起始材料的载气和通过向起始原料中提供电子而与原料结合并与原料形成分子化合物的至少一种给电子物质; 使载气的流动通过含有原料的加热容器，以便原位形成分子化合物并提供气体混合物流; 将气体混合物的流动引入到其中定位基板的反应室中; 并通过在有效的温度条件下热分解分子化合物和任何剩余的起始材料，在基底上生长金或铜。

4. 发明授权

US4660068A Substrate structure of semiconductor device and method of manufacturing the same 失效
标题翻译：半导体器件的基板结构及其制造方法
公开(公告)号：US4660068A
公开(公告)日：1987-04-21
申请号：US525570
申请日：1983-08-22
申请人： Kazuhito Sakuma , Yoshinobu Arita , Masaaki Sato , Nobuyoshi Awaya
发明人： Kazuhito Sakuma , Yoshinobu Arita , Masaaki Sato , Nobuyoshi Awaya
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/316 , H01L21/331 , H01L21/74 , H01L21/76 , H01L21/762 , H01L29/73 , H01L27/12
CPC分类号： H01L21/76 , H01L21/76229 , H01L21/76232
摘要： A substrate structure utilized to fabricate a semiconductor device is constituted by a silicon substrate; an element region selectively formed on the silicon substrate and a relatively thick field oxide region formed adjacent to the element region; an element isolating region formed between the element region and the field oxide region, the element isolating region being in direct contact with the field oxide region; the element isolating region being provided with a relatively deep groove formed in the silicon substrate and having a relatively small width; a silicon oxide insulating film formed on the inner wall of the groove; and a silicon nitride insulating film disposed on the silicon oxide insulating film. The surfaces of the element region, the element isolating region and the field oxide region on the silicon substrate are formed substantially flat.
摘要翻译：用于制造半导体器件的衬底结构由硅衬底构成; 选择性地形成在所述硅衬底上的元件区域和与所述元件区域相邻形成的相对厚的场氧化物区域; 形成在所述元件区域和所述场氧化物区域之间的元件隔离区域，所述元件隔离区域与所述场氧化物区域直接接触; 所述元件隔离区域设置有形成在所述硅衬底中并且具有相对较小宽度的相对较深的沟槽; 形成在所述槽的内壁上的氧化硅绝缘膜; 以及设置在氧化硅绝缘膜上的氮化硅绝缘膜。元件区域，元件隔离区域和硅衬底上的场氧化物区域的表面基本上平坦地形成。

5. 发明授权

US5104694A Selective chemical vapor deposition of a metallic film on the silicon surface 失效
标题翻译：金属表面的金属膜的选择性化学气相沉积
公开(公告)号：US5104694A
公开(公告)日：1992-04-14
申请号：US509873
申请日：1990-04-16
申请人： Kunio Saito , Yoshinobu Arita , Takao Amazawa
发明人： Kunio Saito , Yoshinobu Arita , Takao Amazawa
IPC分类号： C23C16/02 , C23C16/04 , C23C16/42 , C23C16/52 , H01L21/205 , H01L21/28 , H01L21/285 , H01L21/768
CPC分类号： H01L21/28562 , C23C16/0236 , C23C16/04 , H01L21/76879
摘要： A selected chemical vapor deposition method includes the steps of arranging a substrate having a silicon surface and an insulator surface in a reaction chamber, supplying a gas consisting of a silicon hydride in said reaction chamber to reduce and remove a native oxide film on said silicon surface by said gas, and supplying a source gas in said reaction chamber to selectively form a film on only said silicon surface.
摘要翻译：选择的化学气相沉积方法包括以下步骤：在反应室中布置具有硅表面和绝缘体表面的衬底，在所述反应室中供应由氢化硅组成的气体，以减少和去除所述硅表面上的自然氧化膜并且在所述反应室中供应源气体以选择性地仅在所述硅表面上形成膜。

6. 发明授权

US5080927A Tin thin film formation method 失效
标题翻译：薄膜形成方法
公开(公告)号：US5080927A
公开(公告)日：1992-01-14
申请号：US549593
申请日：1990-07-06
申请人： Koichi Ikeda , Masahiko Maeda , Yoshinobu Arita
发明人： Koichi Ikeda , Masahiko Maeda , Yoshinobu Arita
IPC分类号： C23C16/34 , C23C16/48 , H01L21/28 , H01L21/285 , H01L21/3205 , H01L21/768 , H01L23/52
CPC分类号： C23C16/482 , C23C16/34 , H01L21/76841
摘要： A thin film formation method includes the steps of holding a substrate in a reduced-pressure vapor phase reaction chamber having means for irradiating light in visible and ultraviolet ranges, supplying an organo-titanium compound containing a tri-azo group, and vapor-depositing a titanium nitride film on a surface of the substrate by an excitation reaction caused by light.

7. 发明授权

US4963242A Plasma etching apparatus 失效
标题翻译：等离子刻蚀装置
公开(公告)号：US4963242A
公开(公告)日：1990-10-16
申请号：US354906
申请日：1989-05-19
申请人： Masaaki Sato , Yoshinobu Arita
发明人： Masaaki Sato , Yoshinobu Arita
IPC分类号： H01J37/32 , H01J37/34
CPC分类号： H01J37/32623 , H01J37/32587 , H01J37/3266 , H01J37/3405
摘要： A plasma etching apparatus a first cathode electrode, an anode electrode, an annular second cathode electrode, a magnetic field applying unit and high-frequency power sources. An object to be etched is placed on the first cathode electrode. The anode electrode is arranged opposite to the first cathode electrode so as to be separated therefrom and connected to a constant potential source. The second cathode electrode is located between the first cathode electrode and the anode electrode and substantially surrounds the first cathode electrode in an insulated state. The magnetic field applying unit includes coils which generate lines of magnetic force passing through the annular second cathode electrode substantially parallel to a surface of the first cathode electrode on which the object to be etched is placed. The high-frequency power sources are respectively connected to the first and second cathode electrodes to generate a plasma by gas discharge, thereby generating ions near the first and second cathode electrodes.

8. 发明授权

US4531282A Bipolar transistors having vertically arrayed collector-base-emitter with novel polycrystalline base electrode surrounding island emitter and method of making same 失效
标题翻译：双极晶体管具有垂直排列的集电极 - 基极 - 发射极和围绕岛发射体的新型多晶基极及其制造方法
公开(公告)号：US4531282A
公开(公告)日：1985-07-30
申请号：US571453
申请日：1984-01-17
申请人： Tetsushi Sakai , Yoshizi Kobayasi , Hironori Yamauchi , Yoshinobu Arita
发明人： Tetsushi Sakai , Yoshizi Kobayasi , Hironori Yamauchi , Yoshinobu Arita
IPC分类号： H01L29/43 , H01L21/033 , H01L21/28 , H01L21/311 , H01L21/3115 , H01L21/3215 , H01L21/331 , H01L21/768 , H01L29/73 , H01L29/732 , H01L21/225
CPC分类号： H01L29/66272 , H01L21/033 , H01L21/31111 , H01L21/31155 , H01L21/32155 , H01L29/7322
摘要： In a bipolar transistor, around the border line of the surface of a base region formed on a semiconductor substrate is formed a base electrode having a constant width of less than one micron and made of polycrystalline silicon. An island shaped emitter region is formed in the base region and an emitter electrode is formed on the surface of the emitter region. The emitter electrode is electrically isolated from the base electrode by an insulating film extending between the periphery of the emitter region and the base electrode.
摘要翻译：在双极晶体管中，形成在半导体衬底上形成的基极区域的表面的边界线周围，形成具有小于1微米的恒定宽度并由多晶硅制成的基极。在基极区域形成岛状发射极区域，在发射极区域的表面上形成发射电极。发射电极通过在发射极区域的周边和基极之间延伸的绝缘膜与基极电隔离。

9. 发明授权

US5785877A Dry etching method 失效
标题翻译：干蚀刻法
公开(公告)号：US5785877A
公开(公告)日：1998-07-28
申请号：US799083
申请日：1997-02-11
申请人： Masaaki Sato , Yoshinobu Arita , Masahiro Ogasawara , Hidenori Satoh , Hiromitsu Kanbara
发明人： Masaaki Sato , Yoshinobu Arita , Masahiro Ogasawara , Hidenori Satoh , Hiromitsu Kanbara
IPC分类号： C23F1/12 , C23F4/00 , H01L21/302 , H01L21/3065 , H01L21/311
CPC分类号： C23F4/00 , Y10S438/909
摘要： An object to be etched is loaded in a low-pressure vapor phase processing chamber, and then an etching gas obtained by adding a small amount of additive gas of oxygen or additive gas at least containing oxygen to a reaction gas used for etching is fed to the low-pressure vapor phase processing chamber so as to suppress a reaction between the wall of the low-pressure vapor phase processing chamber and the reaction gas. In this state, the object to be etched is dry-etched with the etching gas.
摘要翻译：将待蚀刻的物体装载到低压汽相处理室中，然后将通过向用于蚀刻的反应气体中添加至少含有氧的少量添加气体或添加气体而获得的蚀刻气体供给到低压气相处理室，以抑制低压气相处理室的壁与反应气体之间的反应。在这种状态下，用蚀刻气体干蚀刻被蚀刻物体。

10. 发明授权

US5462014A Apparatus for growing a thin metallic film 失效
标题翻译：用于生长薄金属膜的装置
公开(公告)号：US5462014A
公开(公告)日：1995-10-31
申请号：US200655
申请日：1994-02-23
申请人： Nobuyoshi Awaya , Yoshinobu Arita
发明人： Nobuyoshi Awaya , Yoshinobu Arita
IPC分类号： C23C16/18 , C23C16/44 , C23C16/448 , C23C16/455 , C23C16/00
CPC分类号： C23C16/4557 , C23C16/18 , C23C16/4482 , C23C16/45565
摘要： Gold or copper is grown on a substrate by a chemical vapor deposition method using a .beta.-ketonato type metal complex of gold or copper as a starting material and introducing the starting material to the substrate using as a carrier gas a mixed gas composed of hydrogen and a substance which can bond to the starting material in a state where electron is donated from the substance to the starting material to form a molecular compound.
摘要翻译：金或铜通过化学气相沉积法以金或铜的β-酮酮型金属络合物作为起始材料生长在衬底上，并将起始材料作为载气引入到衬底中，所述混合气体由氢和在从物质向原料供给电子以形成分子化合物的状态下可以结合原料的物质。

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