会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 2. 发明申请
    • METHOD FOR MANUFACTURING MEMORY DEVICE
    • 制造存储器件的方法
    • US20090137065A1
    • 2009-05-28
    • US12271364
    • 2008-11-14
    • Takafumi NODAToshihiko HIGUCHI
    • Takafumi NODAToshihiko HIGUCHI
    • H01L21/02
    • H01L28/55H01L27/11509
    • A method for manufacturing a memory device including a ferroelectric memory array region and a logic circuit region is provided. The method includes the steps of: forming, above a base substrate, a plurality of ferroelectric capacitors in the ferroelectric memory array region; forming a wiring layer above the base substrate in the logic circuit region; forming an interlayer dielectric layer that covers the ferroelectric capacitors and the wiring layer; etching the interlayer dielectric layer formed at least in the ferroelectric memory array region to form a concave section; polishing the interlayer dielectric layer by a CMP (chemical mechanical polishing) method; etching the interlayer dielectric layer above the ferroelectric capacitors and the wiring layer to form contact holes; and forming contact sections in the contact holes.
    • 提供了一种制造包括铁电存储器阵列区域和逻辑电路区域的存储器件的方法。 该方法包括以下步骤:在基底基板上形成铁电存储器阵列区域中的多个铁电电容器; 在逻辑电路区域中的基底基板上形成布线层; 形成覆盖所述铁电电容器和所述布线层的层间绝缘膜; 蚀刻至少形成在铁电存储器阵列区域中的层间电介质层,以形成凹部; 通过CMP(化学机械抛光)方法对层间绝缘层进行抛光; 蚀刻铁电电容器和布线层上方的层间电介质层,形成接触孔; 以及在接触孔中形成接触部分。