会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 3. 发明授权
    • Photomask, semiconductor device, and method for exposing through photomask
    • 光掩模,半导体器件和通过光掩模曝光的方法
    • US06617080B1
    • 2003-09-09
    • US09563953
    • 2000-05-02
    • Toshihide KawachiTakuya MatsushitaShigenori YamashitaYuki MiyamotoAtsushi UenoShinroku Maejima
    • Toshihide KawachiTakuya MatsushitaShigenori YamashitaYuki MiyamotoAtsushi UenoShinroku Maejima
    • G03F900
    • G03F7/70633
    • The present invention provides a photomask, a semiconductor device, and a method for exposing through the photomask. The photomask comprises a photomask substrate, and an on-mask circuit area including an on-mask circuit pattern and an on-mask test mark area including an on-mask test pattern, both formed on the surface of the substrate, wherein the photomask substrate further includes an on-mask photolithography screening mark area including an on-mask comparison pattern and an on-mask screening pattern, the on-mask comparison pattern has substantially the same configuration as at least a part of the on-mask circuit pattern, and the on-mask screening pattern has substantially the same configuration as at least a part of the on-mask test pattern. The present invention allows it to measure the actual displacement generated from an overlaying (i.e. alignment) process for the purpose of eliminating of an the overlay displacement which can take place in a photolithography process.
    • 本发明提供了一种光掩模,半导体器件和用于曝光光掩模的方法。 光掩模包括光掩模基板和包括掩模电路图案的掩模电路区域和包括掩模测试图案的掩模测试标记区域,二者都形成在基板的表面上,其中光掩模基板 进一步包括包括掩膜比较图案和掩模屏蔽图案的掩模光刻掩模标记区域,掩模比较图案具有与至少一部分屏蔽电路图案基本相同的配置,以及 掩模掩模图案具有与掩模测试图案的至少一部分基本相同的构造。 本发明允许它测量从重叠(即对准)过程产生的实际位移,以消除可能在光刻工艺中发生的覆盖位移。