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1. 发明申请

US20070193501A1 Silicon single crystal wafer for IGBT and method for manufacturing silicon single crystal wafer for IGBT 有权
标题翻译：用于IGBT的硅单晶晶片和用于IGBT的硅单晶晶片的制造方法
公开(公告)号：US20070193501A1
公开(公告)日：2007-08-23
申请号：US11708771
申请日：2007-02-20
申请人： Toshiaki Ono , Shigeru Umeno , Wataru Sugimura , Masataka Hourai
发明人： Toshiaki Ono , Shigeru Umeno , Wataru Sugimura , Masataka Hourai
IPC分类号： C30B15/00
CPC分类号： C30B15/00 , C30B29/06 , H01L21/261
摘要： In this silicon single crystal wafer for IGBT, COP defects and dislocation clusters are eliminated from the entire region in the radial direction of the crystal, the interstitial oxygen concentration is 8.5×1017 atoms/cm3 or less, and variation in resistivity within the wafer surface is 5% or less. This method for manufacturing a silicon single crystal wafer for IGBT includes introducing a hydrogen atom-containing substance into an atmospheric gas at a hydrogen gas equivalent partial pressure of 40 to 400 Pa, and growing a single crystal having an interstitial oxygen concentration of 8.5×1017 atoms/cm3 or less at a silicon single crystal pulling speed enabling pulling of a silicon single crystal free of grown-in defects. The pulled silicon single crystal is irradiated with neutrons so as to dope with phosphorous; or an n-type dopant is added to the silicon melt; or phosphorous is added to the silicon melt so that the phosphorous concentration in the silicon single crystal is 2.9×1013 to 2.9×1015 atoms/cm3 and a p-type dopant having a segregation coefficient smaller than that of the phosphorous is added to the silicon melt so that the concentration in the silicon single crystals is 1×1013 to 1×1015 atoms/cm3 corresponding to the segregation coefficient thereof.
摘要翻译：在这种用于IGBT的硅单晶晶片中，从晶体的径向的整个区域去除了COP缺陷和位错簇，间隙氧浓度为8.5×10 17原子/ cm 3 以下，晶片表面的电阻率变化为5％以下。制造用于IGBT的硅单晶晶片的方法包括：将含氢原子的物质以40-400Pa的氢气当量分压引入气氛气体中，并生长间隙氧浓度为8.5×10 5的单晶，低于17原子/ cm 3以下的硅单晶拉伸速度，使得能够拉伸没有生长缺陷的硅单晶。将拉制的硅单晶用中子照射以掺入磷; 或者将n型掺杂剂添加到硅熔体中; 或将磷添加到硅熔体中，使得硅单晶中的磷浓度为2.9×10 13 -2.9×10 15原子/ cm 3 / 并且将具有小于磷的偏析系数的p型掺杂剂添加到硅熔体中，使得硅单晶中的浓度为1×10 13至1×10 15 / 对应于其偏析系数的SUP>原子/ cm 3。

2. 发明申请

US20060283376A1 Apparatus for manufacturing semiconductor single crystal 有权
标题翻译：半导体单晶制造装置
公开(公告)号：US20060283376A1
公开(公告)日：2006-12-21
申请号：US11334536
申请日：2006-01-19
申请人： Wataru Sugimura , Toshiaki Ono , Masataka Hourai
发明人： Wataru Sugimura , Toshiaki Ono , Masataka Hourai
IPC分类号： C30B15/00 , C30B27/02 , C30B21/06 , C30B28/10 , C30B30/04
CPC分类号： C30B35/00 , C30B15/20 , C30B29/06 , Y10T117/1032 , Y10T117/1068 , Y10T117/1072
摘要： This apparatus for manufacturing a semiconductor single crystal includes: a crucible; a heater; a crucible driving unit; a chamber for housing the crucible and the heater; and a hydrogen mixed gas supplying device for supplying into the chamber a hydrogen mixed gas including an inert gas in admixture with a hydrogen-containing gas that contains hydrogen atoms, wherein the hydrogen mixed gas supplying device includes: a hydrogen-containing gas supply unit; an inert gas supply unit; a hydrogen-containing gas flow rate controller; an inert gas flow rate controller; and a gas mixing unit for uniformly mixing together the hydrogen-containing gas and the inert gas so as to form a hydrogen mixed gas.
摘要翻译：该半导体单晶的制造装置包括：坩埚; 加热器坩埚驱动单元; 用于容纳坩埚和加热器的室; 以及氢混合气体供给装置，其向所述室供给包含惰性气体的氢混合气体，所述氢混合气体与含有氢原子的含氢气体混合，其中所述氢混合气体供给装置包括：含氢气体供给单元; 惰性气体供应单元; 含氢气体流速控制器; 惰性气体流量控制器; 以及用于将含氢气体和惰性气体均匀混合在一起以形成氢气混合气体的气体混合单元。

3. 发明授权

US08758505B2 Silicon wafer and method for manufacturing the same 有权
标题翻译：硅晶片及其制造方法
公开(公告)号：US08758505B2
公开(公告)日：2014-06-24
申请号：US12728970
申请日：2010-03-22
申请人： Toshiaki Ono , Wataru Sugimura , Masataka Hourai
发明人： Toshiaki Ono , Wataru Sugimura , Masataka Hourai
IPC分类号： C30B1/02
CPC分类号： C30B29/06 , C30B33/02 , H01L21/3225
摘要： A method for manufacturing a silicon wafer includes a step of annealing a silicon wafer which is sliced from a silicon single crystal ingot, thereby forming a DZ layer in a first surface and in a second surface of the silicon wafer and a step of removing either a portion of the DZ layer in the first surface or a portion of the DZ layer in the second surface.
摘要翻译：一种硅晶片的制造方法，其特征在于，将从硅单晶锭切片的硅晶片退火，由此在硅晶片的第一表面和第二表面形成DZ层，第一表面中的DZ层的一部分或第二表面中的DZ层的一部分。

4. 发明授权

US07637997B2 Silicon wafer, method for producing silicon wafer and method for growing silicon single crystal 有权
标题翻译：硅晶片，硅晶片的制造方法以及生长硅单晶的方法
公开(公告)号：US07637997B2
公开(公告)日：2009-12-29
申请号：US11439486
申请日：2006-05-22
申请人： Toshiaki Ono , Wataru Sugimura , Masataka Hourai
发明人： Toshiaki Ono , Wataru Sugimura , Masataka Hourai
IPC分类号： C30B15/20
CPC分类号： C30B29/06 , C30B15/203 , C30B25/20 , C30B33/02
摘要： A silicon single crystal is grown by the CZ method. A silicon melt from which the crystal is grown is added with dopant such that the crystal has a resistivity of 0.025 to 0.08 Ωcm. As well as the dopant, carbon is added to the silicon melt. The crystal is pulled in a hydrogen-bearing inert atmosphere.
摘要翻译：通过CZ法生长硅单晶。加入晶体生长的硅熔体，掺杂剂使得晶体的电阻率为0.025〜0.08Ωmacm。与掺杂剂一样，将碳添加到硅熔体中。将晶体在含氢惰性气氛中拉动。

5. 发明申请

US20070157870A1 Silicon wafer, method for manufacturing the same and method for growing silicon single crystals 有权
标题翻译：硅晶片及其制造方法以及生长硅单晶的方法
公开(公告)号：US20070157870A1
公开(公告)日：2007-07-12
申请号：US10587039
申请日：2005-08-24
申请人： Masataka Hourai , Wataru Sugimura , Toshiaki Ono
发明人： Masataka Hourai , Wataru Sugimura , Toshiaki Ono
IPC分类号： C30B15/00 , C30B21/06
CPC分类号： C30B29/06 , C30B15/04 , C30B15/203
摘要： This silicon wafer is obtained from a silicon single crystal grown by the CZ method in a hydrogen-containing inert gas atmosphere, and is a completely grown-in defect-free wafer containing no COPs or dislocation clusters throughout the wafer in the thickness and radial directions thereof, and all the portions consist essentially of an interstitial rich region. This method for growing silicon single crystals includes pulling a silicon single crystal in a hydrogen-containing inert gas atmosphere so as to expand the range of the pull rate for the PI region, wherein the pulling of the silicon single crystal is conducted at a pull rate within this expanded range of the pull rate for the PI region so as to grow a body portion that is an interstitial rich region.
摘要翻译：该硅晶片由含氢惰性气体气氛中通过CZ法生长的硅单晶获得，并且是在整个晶片中在厚度和径向方向上不含COP或位错簇的完全生长的无缺陷晶片并且所有部分基本上由富间隙组成。用于生长硅单晶的方法包括在含氢惰性气体气氛中拉动单晶硅，以扩大PI区域的拉伸速率的范围，其中以单独的拉伸速率进行硅单晶的拉伸在PI区域的拉伸速率的扩大范围内，以便增长作为间隙富集区域的主体部分。

6. 发明申请

US20060225640A1 Method for manufacturing silicon single crystal, and silicon wafer 有权
标题翻译：硅单晶的制造方法和硅晶片
公开(公告)号：US20060225640A1
公开(公告)日：2006-10-12
申请号：US11393809
申请日：2006-03-31
申请人： Toshiaki Ono , Wataru Sugimura , Masataka Hourai
发明人： Toshiaki Ono , Wataru Sugimura , Masataka Hourai
IPC分类号： C30B15/00 , C30B21/06 , C30B27/02 , C30B28/10 , C30B30/04
CPC分类号： C30B15/04 , C30B15/203 , C30B29/06
摘要： A silicon single crystal is manufactured by growing said crystal composed of a defect-free area free from the Grown-in defects by the CZ process, adding a gas of a hydrogen atom-containing substance to an atmosphere gas within a growing apparatus, and doping nitrogen and/or carbon in the crystal. Therefore, a wafer the whole surface of which is composed of the defect-free area free from the Grown-in defects and which can sufficiently and uniformly form BMD can be easily sliced. Such a wafer can be extensively used, since it can significantly reduce generation of characteristic defectives of integrated circuits to be formed thereon and contribute for improving the production yield as a substrate responding to the demand for further miniaturization and higher density of the circuits.
摘要翻译：通过生长所述晶体制造所述晶体，所述晶体由通过CZ工艺的没有生长缺陷的无缺陷区域组成，向生长装置内的气氛气体中加入含氢原子的物质的气体，以及掺杂氮和/或碳。因此，可以容易地将其整个表面由无缺陷区域构成并且能够充分均匀地形成BMD的晶片构成。可以广泛使用这样的晶片，因为它可以显着减少要在其上形成的集成电路的特征缺陷的产生，并有助于响应于进一步小型化和更高密度的电路的需求而提高作为衬底的生产成品率。

7. 发明授权

US07704318B2 Silicon wafer, SOI substrate, method for growing silicon single crystal, method for manufacturing silicon wafer, and method for manufacturing SOI substrate 有权
标题翻译：硅晶片，SOI衬底，生长硅单晶的方法，硅晶片的制造方法以及SOI衬底的制造方法
公开(公告)号：US07704318B2
公开(公告)日：2010-04-27
申请号：US10546600
申请日：2004-02-25
申请人： Masataka Hourai , Wataru Sugimura , Toshiaki Ono , Tadami Tanaka
发明人： Masataka Hourai , Wataru Sugimura , Toshiaki Ono , Tadami Tanaka
IPC分类号： C30B29/06
CPC分类号： C30B15/203 , C30B29/06
摘要： When growing a silicon single crystal free of grown-in defects based on the CZ method, the crystal is pulled out at a critical pulling rate at which a ring-shaped OSF occurrence region vanishes in a center portion of the crystal by using a hot zone structure in which a temperature gradient Gc in a center portion of the crystal is equal to or greater than a temperature gradient Ge in a peripheral portion of the crystal, while supplying an inert gas including hydrogen to an interior of a pulling furnace. The critical pulling rate at which the ring-shaped OSF occurrence region vanishes in the center portion of the crystal is increased, and single crystals free of grown-in defects in which dislocation clusters and COPs can be grown by pulling at a pulling rate higher than that of the prior art.
摘要翻译：当基于CZ方法生长没有生长缺陷的硅单晶时，以环形OSF发生区域在晶体的中心部分消失的临界拉伸速率拉出晶体，通过使用热区在晶体的周边部分中，晶体中心部分的温度梯度Gc等于或大于晶体周边部分的温度梯度Ge，同时向拉制炉内部供应包括氢的惰性气体。环状OSF发生区域在晶体中心部分消失的临界拉拔率增加，并且单晶不产生通过以高于现有技术的。

8. 发明申请

US20090261301A1 Method for growing silicon single crystal, and silicon wafer 审中-公开
标题翻译：生长硅单晶的方法和硅晶片
公开(公告)号：US20090261301A1
公开(公告)日：2009-10-22
申请号：US12453579
申请日：2009-05-15
申请人： Toshiaki Ono , Wataru Sugimura , Masataka Hourai
发明人： Toshiaki Ono , Wataru Sugimura , Masataka Hourai
IPC分类号： H01B1/04 , C01B33/12
CPC分类号： C30B15/00 , C30B29/06
摘要： A silicon single crystal is produced by the CZ process by setting a hydrogen partial pressure in an inert atmosphere within a growing apparatus to 40 Pa or more but 400 Pa or less, and by growing a trunk part of the single crystal as a defect-free area free from the Grown-in defects. Therefore, a wafer the whole surface of which is composed of the defect-free area free from the Grown-in defects and which can sufficiently and uniformly form BMD can be easily produced. Such a wafer can be extensively used, since it can significantly reduce generation of characteristic defectives of integrated circuits to be formed thereon and contribute for improving the production yield as a substrate responding to the demand for further miniaturization and higher density of the circuits.
摘要翻译：通过将生长装置内的惰性气氛中的氢分压设定为40Pa以上且400Pa以下，通过CZ工艺制造硅单晶，并且通过将单晶的主干部分生长为无缺陷的方式区域没有成长缺陷。因此，可以容易地制造整个表面由无缺陷区域构成的晶片，并且可以充分均匀地形成BMD。可以广泛使用这样的晶片，因为它可以显着减少要在其上形成的集成电路的特征缺陷的产生，并有助于响应于进一步小型化和更高密度的电路的需求而提高作为衬底的生产成品率。

9. 发明授权

US07384480B2 Apparatus for manufacturing semiconductor single crystal 有权
标题翻译：半导体单晶制造装置
公开(公告)号：US07384480B2
公开(公告)日：2008-06-10
申请号：US11334536
申请日：2006-01-19
申请人： Wataru Sugimura , Toshiaki Ono , Masataka Hourai
发明人： Wataru Sugimura , Toshiaki Ono , Masataka Hourai
IPC分类号： C30B35/00
CPC分类号： C30B35/00 , C30B15/20 , C30B29/06 , Y10T117/1032 , Y10T117/1068 , Y10T117/1072
摘要： This apparatus for manufacturing a semiconductor single crystal includes: a crucible; a heater; a crucible driving unit; a chamber for housing the crucible and the heater; and a hydrogen mixed gas supplying device for supplying into the chamber a hydrogen mixed gas including an inert gas in admixture with a hydrogen-containing gas that contains hydrogen atoms, wherein the hydrogen mixed gas supplying device includes: a hydrogen-containing gas supply unit; an inert gas supply unit; a hydrogen-containing gas flow rate controller; an inert gas flow rate controller; and a gas mixing unit for uniformly mixing together the hydrogen-containing gas and the inert gas so as to form a hydrogen mixed gas.
摘要翻译：该半导体单晶的制造装置包括：坩埚; 加热器坩埚驱动单元; 用于容纳坩埚和加热器的室; 以及氢混合气体供给装置，其向所述室供给包含惰性气体的氢混合气体，所述氢混合气体与含有氢原子的含氢气体混合，其中所述氢混合气体供给装置包括：含氢气体供给单元; 惰性气体供应单元; 含氢气体流量控制器; 惰性气体流量控制器; 以及用于将含氢气体和惰性气体均匀混合在一起以形成氢气混合气体的气体混合单元。

10. 发明授权

US07320731B2 Process for growing silicon single crystal and process for producing silicon wafer 有权
标题翻译：用于生长硅单晶的工艺和用于生产硅晶片的工艺
公开(公告)号：US07320731B2
公开(公告)日：2008-01-22
申请号：US11488408
申请日：2006-07-17
申请人： Toshiaki Ono , Wataru Sugimura , Masataka Hourai
发明人： Toshiaki Ono , Wataru Sugimura , Masataka Hourai
IPC分类号： C30B15/20
CPC分类号： C30B15/203 , C30B29/06
摘要： A process for growing a silicon single crystal which is capable of growing a silicon single crystal at a pulling rate which is not lower than the critical pulling rate at which an OSF-generating region will be generated is provided. Such a process for growing a silicon single crystal is characterized by using an atmospheric gas for growing a single crystal which is a hydrogen-containing gas which contains a hydrogen-containing substance, and pulling the silicon single crystal at a pulling rate ranging from a value with which the ratio (a/b) of the diameter (b) of the silicon single crystal and the outer diameter (a) of a ring which consists of the OSF-generating region in the radial direction of the silicon single crystal is not higher than 0.77 to another value with which the OSF-generating region disappears at the center part of the crystal.
摘要翻译：提供了能够以不低于将产生OSF的区域的临界牵引速率的拉拔速度生长硅单晶的硅单晶的生长方法。这种用于生长硅单晶的方法的特征在于使用大气气体来生长含有含氢物质的含氢气体的单晶，并以拉伸速度从一个值硅单晶的直径（b）与由硅单晶的径向的OSF生成区域构成的环的外径（a）的比（a / b）不高大于0.77到OSF产生区域在晶体中心部分消失的另一个值。

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