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1. 发明授权

US08742179B2 Method for producing aryl, heteroaryl, or alkenyl-substituted unsaturated hydrocarbon 有权
标题翻译：芳基，杂芳基或烯基取代的不饱和烃的制备方法
公开(公告)号：US08742179B2
公开(公告)日：2014-06-03
申请号：US13390312
申请日：2010-08-13
申请人： Toshiaki Nishizawa , Makoto Funabora
发明人： Toshiaki Nishizawa , Makoto Funabora
IPC分类号： C07C7/04
CPC分类号： C07C29/94 , B01J2531/824 , C07B37/04 , C07C2/861 , C07C7/04 , C07C7/05 , C07C7/10 , C07C7/20 , C07C29/32 , C07C29/80 , C07C2531/24 , C07C33/30 , C07C15/48
摘要： The present invention relates to a method for producing aryl-, heteroaryl- or alkenyl-substituted unsaturated hydrocarbons, containing: reacting aryl halides, heteroaryl halides or alkenyl halides with alkynes or alkenes in the presence of a palladium catalyst to obtain a crude product, and subsequently distillatively purifying the crude product in the presence of a compound having at least one NC═S group.
摘要翻译：本发明涉及一种芳基 - 杂芳基 - 或烯基 - 取代的不饱和烃的制备方法，它包括：在钯催化剂存在下使芳基卤化物，杂芳基卤化物或链烯基卤化物与炔烃或烯烃反应得到粗产物，和随后在具有至少一个NC = S基团的化合物的存在下蒸馏纯化粗产物。

2. 发明申请

US20120142975A1 METHOD FOR PRODUCING ARYL, HETEROARYL, OR ALKENYL-SUBSTITUTED UNSATURATED HYDROCARBON 有权
标题翻译：生产芳基，杂芳基或烷基取代的不饱和烃的方法
公开(公告)号：US20120142975A1
公开(公告)日：2012-06-07
申请号：US13390312
申请日：2010-08-13
申请人： Toshiaki Nishizawa , Makoto Funabora
发明人： Toshiaki Nishizawa , Makoto Funabora
IPC分类号： C07C33/30 , C07C15/40
CPC分类号： C07C29/94 , B01J2531/824 , C07B37/04 , C07C2/861 , C07C7/04 , C07C7/05 , C07C7/10 , C07C7/20 , C07C29/32 , C07C29/80 , C07C2531/24 , C07C33/30 , C07C15/48
摘要： The present invention relates to a method for producing aryl-, heteroaryl- or alkenyl-substituted unsaturated hydrocarbons, containing: reacting aryl halides, heteroaryl halides or alkenyl halides with alkynes or alkenes in the presence of a palladium catalyst to obtain a crude product, and subsequently distillatively purifying the crude product in the presence of a compound having at least one NC═S group.
摘要翻译：本发明涉及一种芳基 - 杂芳基 - 或烯基 - 取代的不饱和烃的制备方法，它包括：在钯催化剂存在下使芳基卤化物，杂芳基卤化物或链烯基卤化物与炔烃或烯烃反应得到粗产物，和随后在具有至少一个NC = S基团的化合物的存在下蒸馏纯化粗产物。

3. 发明授权

US4605813A Amorphous silicon solar battery 失效
标题翻译：非晶硅太阳能电池
公开(公告)号：US4605813A
公开(公告)日：1986-08-12
申请号：US754201
申请日：1985-07-11
申请人： Yukihisa Takeuchi , Masaaki Mori , Kenji Maekawa , Toshiaki Nishizawa
发明人： Yukihisa Takeuchi , Masaaki Mori , Kenji Maekawa , Toshiaki Nishizawa
IPC分类号： H01L31/04 , H01L27/142 , H01L31/0224 , H01L31/0392 , H01L27/14 , H01L31/06
CPC分类号： H01L31/022425 , H01L31/03921 , H01L31/046 , H01L31/0465 , Y02E10/50
摘要： A flexible amorphous silicon solar battery comprising a metal foil as the substrate thereof, an insulating layer integrally formed on the metal foil, and at least one amorphous silicon photoelectric conversion portion formed on the insulating layer. The amorphous silicon photoelectric conversion portion thereof comprises an a-Si thin film having a potential barrier therein, an upper electrode and a lower electrode. The a-Si thin film is sandwiched between the upper and lower electrodes. The upper electrodes may be formed of a transparent conductive film. The transparent conductive film may be also in two layers composed of a relatively thin tin dioxide film and a relatively thick ITO film thereby to lower the resistance of transparent conductive film and to obtain a superior a-Si thin film having no impurity particles therein. A plurality of a-Si photoelectric conversion portions may be formed on the same substrate, and are connected in series with one another, to increase the output voltage thereof. The a-Si photoelectric conversion portions may be formed as forward junction and/or reverse junction types. The a-Si solar battery of this invention is flexible because of use of a metal foil with thickness of 10 to 250 .mu.m such as stainless steel, aluminum or iron as the substrate thereof, so that it can be easily attached to a product having a curved surface thereon, such as an automobile or the like. Further, there are no problems or disadvantages, such as spallings and cracks of the a-Si thin film, or deterioration of the physical properties thereof, so that the a-Si solar battery of this invention can provide excellent conversion efficiency.
摘要翻译：一种柔性非晶硅太阳能电池，其特征在于，以金属箔为基材，在所述金属箔上一体形成的绝缘层和形成在所述绝缘层上的至少一个非晶硅光电转换部。其非晶硅光电转换部分包括其中具有势垒的a-Si薄膜，上电极和下电极。 a-Si薄膜夹在上电极和下电极之间。上部电极可以由透明导电膜形成。透明导电膜也可以由相对较薄的二氧化锡膜和较厚的ITO膜构成，从而降低透明导电膜的电阻，并获得其中没有杂质颗粒的优异的a-Si薄膜。多个a-Si光电转换部可以形成在同一基板上，并且彼此串联连接以增加其输出电压。 a-Si光电转换部分可以形成为正向结和/或反向连接类型。本发明的a-Si太阳能电池由于使用厚度为10〜250μm的金属箔（例如不锈钢，铝或铁等）作为基板而具有柔性，因此可以容易地与具有其上的曲面，例如汽车等。此外，没有诸如a-Si薄膜的剥落和裂纹或其物理性能的劣化的问题或缺点，使得本发明的a-Si太阳能电池可以提供优异的转换效率。

4. 发明授权

US5453390A Method of producing semiconductor device with current detecting function 失效
标题翻译：具有电流检测功能的半导体器件的制造方法
公开(公告)号：US5453390A
公开(公告)日：1995-09-26
申请号：US38958
申请日：1993-03-29
申请人： Toshiaki Nishizawa , Akira Kuroyanagi , Tsuyoshi Yamamoto , Norihito Tokura
发明人： Toshiaki Nishizawa , Akira Kuroyanagi , Tsuyoshi Yamamoto , Norihito Tokura
IPC分类号： H01L29/78 , H01L21/336 , H01L27/02 , H01L27/04 , H01L21/266
CPC分类号： H01L29/66712 , H01L27/0248 , H01L29/7811 , H01L29/7815 , Y10S148/126
摘要： A power semiconductor device having current detecting function comprising a detection pert that includes the elements of a better reach-through withstand voltage capability than those of a principal current part. The power semiconductor device comprises such elements as DMOS, IGBT or BPT cells. One area of the device acts as the detection part and another as the principal current part. The detection part and the principal current part share as their common electrode a high density substrate having a low density layer of a first conductivity type. The surface of the low density layer carries a principal and a subordinate well region of a second conductivity type each. The surface of the principal well region bears a surface electrode region of the first conductivity type acting as the other electrode of the principal current part; the surface of the subordinate well region carries a surface electrode region of the first conductivity type acting as the other electrode of the detection part. The subordinate well region is made shallower than the principal well region illustratively by use of a mask having narrower apertures through which to form the former region. This causes a reach-through to occur in the principal current part with its well region having a shorter distance to the high density substrate, and not in the detection part with its well region having a longer distance to the substrate.
摘要翻译：一种具有电流检测功能的功率半导体器件，包括具有比主要电流部分更好的达到耐受电压能力的元件的检测灵敏度。功率半导体器件包括诸如DMOS，IGBT或BPT单元的元件。设备的一个区域作为检测部分，另一个作为主要的当前部分。检测部分和主要电流部分共同作为其公共电极具有第一导电类型的低密度层的高密度基板。低密度层的表面分别载有第二导电类型的主要和次要的阱区。主阱区域的表面具有作为主电流部分的另一个电极的第一导电类型的表面电极区域; 下位阱区域的表面带有用作检测部分的另一电极的第一导电类型的表面电极区域。通过使用具有较窄孔径的掩模来形成下一个井区域使其比主井区域浅，以形成前区域。这导致在主电流部分中出现通孔，其阱区具有与高密度衬底相距较短的距离，而不在其阱区具有与衬底相距较远的检测部分中。

5. 发明授权

US5654560A Semiconductor device with current detecting function and method of producing the same 失效
标题翻译：具有电流检测功能的半导体器件及其制造方法
公开(公告)号：US5654560A
公开(公告)日：1997-08-05
申请号：US475096
申请日：1995-06-07
申请人： Toshiaki Nishizawa , Akira Kuroyanagi , Tsuyoshi Yamamoto , Norihito Tokura
发明人： Toshiaki Nishizawa , Akira Kuroyanagi , Tsuyoshi Yamamoto , Norihito Tokura
IPC分类号： H01L29/78 , H01L21/336 , H01L27/02 , H01L27/04 , H01L29/74
CPC分类号： H01L29/66712 , H01L27/0248 , H01L29/7811 , H01L29/7815 , Y10S148/126
摘要： A power semiconductor device having a current detecting function comprising a detection part that includes the elements of a better reach-through withstand voltage capability than those of a principal current part. The power semiconductor device comprises such elements as DMOS, IGBT or BPT cells. One area of the device acts as the detection part and another as the principal current part. The detection part and the principal current part share as their common electrode a high density substrate having a low density layer of a first conductivity type. The surface of the low density layer carries a principal and a subordinate well region of a second conductivity type each. The surface of the principal well region bears a surface electrode region of the first conductivity type acting as the other electrode of the principal current part; the surface of the subordinate well region carries a surface electrode region of the first conductivity type acting as the other electrode of the detection part. The subordinate well region is made shallower than the principal well region illustratively by use of a mask having narrower apertures through which to form the former region. This causes a reach-through to occur in the principal current part with its well region having a shorter distance to the high density substrate, and not in the detection part with its well region having a longer distance to the substrate.
摘要翻译：一种具有电流检测功能的功率半导体器件，包括检测部件，该检测部件包括比主电流部件更好的达到耐受电压能力的元件。功率半导体器件包括诸如DMOS，IGBT或BPT单元的元件。设备的一个区域作为检测部分，另一个作为主要的当前部分。检测部分和主要电流部分共同作为其公共电极具有第一导电类型的低密度层的高密度基板。低密度层的表面分别载有第二导电类型的主要和次要的阱区。主阱区域的表面具有作为主电流部分的另一个电极的第一导电类型的表面电极区域; 下位阱区域的表面带有用作检测部分的另一电极的第一导电类型的表面电极区域。通过使用具有较窄孔径的掩模来形成下一个井区域使其比主井区域浅，以形成前区域。这导致在主电流部分中出现通孔，其阱区具有与高密度衬底相距较短的距离，而不在其阱区具有与衬底相距较远的检测部分中。

6. 发明授权

US5534454A Method of producing a semiconductor device having accurate current detection 失效
标题翻译：制造具有精确电流检测的半导体器件的方法
公开(公告)号：US5534454A
公开(公告)日：1996-07-09
申请号：US385553
申请日：1995-02-08
申请人： Yasuaki Tsuzuki , Akira Kuroyanagi , Toshiaki Nishizawa
发明人： Yasuaki Tsuzuki , Akira Kuroyanagi , Toshiaki Nishizawa
IPC分类号： H01L21/336 , H01L21/76 , H01L27/02 , H01L27/04 , H01L29/06 , H01L29/10 , H01L29/78 , H01L21/265 , H01L21/70 , H01L27/00
CPC分类号： H01L29/7815 , H01L27/0248 , H01L29/0619 , H01L29/0696 , H01L29/1095
摘要： A power DMOS semiconductor device is producible with standard processes and provides improved current detecting accuracy. The device involves main wells (41), subwells (42), and a line well (43), which is independent of the main wells and subwells. These wells are formed by doping the surface of a semiconductor substrate (1) with well forming impurities. The line well surrounds the subwells with a predetermined distance away from the subwells, to relax an electric field on the surface of the substrate. Gate electrodes (71, 72) are patterned to form a line opening (10), which surrounds the subwells. The line opening serves as a mask when forming the line well by doping the surface of the substrate with the well forming impurities. Accordingly, the width of a region between the line well and an adjacent subwell will not fluctuate.
摘要翻译：功率DMOS半导体器件可通过标准工艺生产，并提供改进的电流检测精度。该装置包括主井（41），底孔（42）和一条管井（43），其独立于主井和下井。这些阱通过掺杂具有良好形成杂质的半导体衬底（1）的表面而形成。线条井围绕底孔以预定的距离离开底孔，以松弛基底表面上的电场。栅电极（71,72）被图案化以形成围绕底孔的线路开口（10）。当通过用形成孔的杂质掺杂衬底的表面来形成线时，线路开口用作掩模。因此，线槽与相邻的底座之间的区域的宽度不会波动。

7. 发明授权

US5410171A Vertical type semiconductor with main current section and emulation current section 失效
标题翻译：具有主电流部分和仿真电流部分的垂直型半导体
公开(公告)号：US5410171A
公开(公告)日：1995-04-25
申请号：US038951
申请日：1993-03-29
申请人： Yasuaki Tsuzuki , Akira Kuroyanagi , Toshiaki Nishizawa
发明人： Yasuaki Tsuzuki , Akira Kuroyanagi , Toshiaki Nishizawa
IPC分类号： H01L21/336 , H01L21/76 , H01L27/02 , H01L27/04 , H01L29/06 , H01L29/10 , H01L29/78
CPC分类号： H01L29/7815 , H01L27/0248 , H01L29/0619 , H01L29/0696 , H01L29/1095
摘要： A power DMOS semiconductor device providing improved current detection accuracy can be produced using standard pocessess. The device includes main wells, subwells and a line well which is independent of the main wells and subwells. These wells are formed by doping the surface of a semiconductor substrate with well-forming impurities. The line well surrounds the subwells at a predetermined distance away from the subwells to relax an electric field on the surface of the substrate. Gate electrodes are patterned to form a line opening which surrounds the subwells. The line opening serves as a mask when forming the line well by doping the surface of the substrate with the well-forming impurities. Accordingly, the width of a region between the line well and an adjacent subwell will not fluctuate.
摘要翻译：提供提高电流检测精度的功率DMOS半导体器件可以使用标准的方式产生。该装置包括主井，下井和一条独立于主井和下井的线井。这些阱通过掺杂具有良好形成杂质的半导体衬底的表面而形成。线路井在距离底孔预定距离处围绕底孔，以松弛基底表面上的电场。图案化栅电极以形成围绕底孔的线路开口。线形开口用于通过用形成阱的杂质掺杂衬底的表面来形成线状物时用作掩模。因此，线槽与相邻的底座之间的区域的宽度不会波动。

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