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    • 5. 发明授权
    • Image processing method and apparatus
    • 图像处理方法和装置
    • US08320703B2
    • 2012-11-27
    • US11945729
    • 2007-11-27
    • Hiroyuki Mizuno
    • Hiroyuki Mizuno
    • G06K9/40
    • G06T5/006
    • An image processing method executes image processing to correct a non-uniform perceived resolution caused by image distortion correction, thereby achieving a uniform perceived resolution over an entire displayed image. The image processing method includes the step of adjusting an aperture compensation signal using distortion correcting data to correct a non-uniform perceived resolution caused in an image through partial conversion of magnification ratio by image distortion correction, thereby achieving a uniform perceived resolution.
    • 图像处理方法执行图像处理以校正由图像失真校正引起的不均匀的感知分辨率,从而在整个显示图像上实现均匀的感知分辨率。 图像处理方法包括使用失真校正数据调整孔径补偿信号的步骤,以通过图像失真校正通过部分转换放大率来校正在图像中引起的不均匀的感觉分辨率,由此实现均匀的感知分辨率。
    • 6. 发明授权
    • Semiconductor device
    • 半导体器件
    • US08199549B2
    • 2012-06-12
    • US12859445
    • 2010-08-19
    • Hiroyuki MizunoTakeshi SakataNobuhiro OodairaTakao WatanabeYusuke Kanno
    • Hiroyuki MizunoTakeshi SakataNobuhiro OodairaTakao WatanabeYusuke Kanno
    • G11C5/06
    • G11C11/4076G11C7/04G11C7/065G11C7/08G11C7/12G11C7/18G11C11/4091G11C11/4094G11C11/4097G11C2207/002G11C2207/005
    • The present invention provides a sense circuit for DRAM memory cell to cover the events that a sense time becomes remarkably longer when a power source voltage is lowered, a sense time under the low voltage condition becomes shorter when temperature rises and a sense time changes to a large extent for fluctuation of processes. The present invention provides the following typical effects. A switch means is provided between the bit line BL and local bit line LBL connected to the memory cells for isolation and coupling of these bit lines. The bit line BL is precharged to the voltage of VDL/2, while the local bit line LBL is precharged to the voltage of VDL. The VDL is the maximum amplitude voltage of the bit line BL. A sense amplifier SA comprises a first circuit including a differential MOS pair having the gate connected to the bit line BL and a second circuit connected to the local bit line LBL for full amplitude amplification and for holding the data. When the bit line BL and local bit line LBL are capacitance-coupled via a capacitor, it is recommended to use a latch type sense amplifier SA connected to the local bit line LBL.
    • 本发明提供了一种用于DRAM存储单元的感测电路,以覆盖当电源电压降低时感测时间变得显着更长的事件,当温度升高时,低电压条件下的感测时间变短,感测时间变为 过程波动很大程度。 本发明提供以下典型的效果。 在位线BL和连接到存储器单元的局部位线LBL之间提供开关装置,用于这些位线的隔离和耦合。 位线BL被预充电到VDL / 2的电压,而局部位线LBL被预充电到VDL的电压。 VDL是位线BL的最大幅度电压。 读出放大器SA包括第一电路,其包括具有连接到位线BL的栅极的差分MOS对,以及连接到用于全幅放大的局部位线LBL并用于保持该数据的第二电路。 当位线BL和本地位线LBL通过电容器电容耦合时,建议使用连接到局部位线LBL的锁存型读出放大器SA。