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1. 发明申请

US20060038137A1 Charged particle beam apparatus and method of forming electrodes having narrow gap therebetween by using the same 失效
标题翻译：带电粒子束装置和通过使用它们形成具有窄间隙的电极的方法
公开(公告)号：US20060038137A1
公开(公告)日：2006-02-23
申请号：US11196094
申请日：2005-08-03
申请人： Toshiaki Fujii , Masao Abe , Kunji Shigeto , Minuru Kawamura , Alekber Kasumov , Kazuhito Tsukagoshi , Yoshinobu Aoyagi
发明人： Toshiaki Fujii , Masao Abe , Kunji Shigeto , Minuru Kawamura , Alekber Kasumov , Kazuhito Tsukagoshi , Yoshinobu Aoyagi
IPC分类号： G21K7/00
CPC分类号： H01J37/3056 , H01J37/304 , H01J2237/043 , H01J2237/30466 , H01J2237/31732 , H01J2237/31737 , H01J2237/31749
摘要： A focused ion beam apparatus having two pieces of probers brought into contact with two points of a surface of a sample, a voltage source for applying a constant voltage between the two points with which the probers are brought into contact, and an ammeter for measuring a current flowing between the two points, in which a conductive film is formed to narrow a gap thereof between the two points by operating a deflection electrode and a gas gun and the current flowing between the two points is monitored, and when the current becomes a predetermined value, a focused charged particle beam irradiated to the surface of the sample is made OFF by the blanking electrode.
摘要翻译：一种聚焦离子束装置，其具有与样品表面的两个点接触的两个探测器，用于在与探测器接触的两个点之间施加恒定电压的电压源，以及用于测量在两点之间流动的电流，其中通过操作偏转电极和气枪来形成导电膜以使两点间的间隙变窄，并且监测在两点之间流动的电流，并且当电流变为预定的通过消隐电极使照射到样品表面的聚焦带电粒子束截止。

2. 发明授权

US07301159B2 Charged particle beam apparatus and method of forming electrodes having narrow gap therebetween by using the same 失效
标题翻译：带电粒子束装置和通过使用它们形成具有窄间隙的电极的方法
公开(公告)号：US07301159B2
公开(公告)日：2007-11-27
申请号：US11196094
申请日：2005-08-03
申请人： Toshiaki Fujii , Masao Abe , Kunji Shigeto , Minuru Kawamura , Alekber Yu Kasumov , Kazuhito Tsukagoshi , Yoshinobu Aoyagi
发明人： Toshiaki Fujii , Masao Abe , Kunji Shigeto , Minuru Kawamura , Alekber Yu Kasumov , Kazuhito Tsukagoshi , Yoshinobu Aoyagi
IPC分类号： A61N5/00
CPC分类号： H01J37/3056 , H01J37/304 , H01J2237/043 , H01J2237/30466 , H01J2237/31732 , H01J2237/31737 , H01J2237/31749
摘要： A focused ion beam apparatus having two pieces of probers brought into contact with two points of a surface of a sample, a voltage source for applying a constant voltage between the two points with which the probers are brought into contact, and an ammeter for measuring a current flowing between the two points, in which a conductive film is formed to narrow a gap thereof between the two points by operating a deflection electrode and a gas gun and the current flowing between the two points is monitored, and when the current becomes a predetermined value, a focused charged particle beam irradiated to the surface of the sample is made OFF by the blanking electrode.
摘要翻译：一种聚焦离子束装置，其具有与样品表面的两个点接触的两个探测器，用于在与探测器接触的两个点之间施加恒定电压的电压源，以及用于测量在两点之间流动的电流，其中通过操作偏转电极和气枪来形成导电膜以使两点间的间隙变窄，并且监测在两点之间流动的电流，并且当电流变为预定的通过消隐电极使照射到样品表面的聚焦带电粒子束截止。

3. 发明申请

US20080315190A1 Organic Thin Film Transistor and Method for Surface Modification of Gate Insulating Layer of Organic Thin Film Transistor 审中-公开
标题翻译：有机薄膜晶体管及有机薄膜晶体管栅极绝缘层表面改性方法
公开(公告)号：US20080315190A1
公开(公告)日：2008-12-25
申请号：US12065416
申请日：2006-08-25
申请人： Kazuhito Tsukagoshi , Kunji Shigeto , Iwao Yagi , Yoshinobu Aoyagi
发明人： Kazuhito Tsukagoshi , Kunji Shigeto , Iwao Yagi , Yoshinobu Aoyagi
IPC分类号： H01L51/05 , H01L21/312
CPC分类号： H01L51/0545 , H01L27/283 , H01L51/0011 , H01L51/0055 , H01L51/0525 , H01L51/0533
摘要： This invention provides an organic thin film transistor, which can realize the modification of the surface of a gate insulating layer not only the case where the gate insulating layer is formed of an oxide, but also the case where the gate insulating layer is formed of a material other than the oxide and consequently can significantly improve transistor characteristics, and a method for surface modification of a gate insulating layer in the organic thin film transistor. In an organic thin film transistor comprising a gate insulating layer, an organic semiconductor layer stacked on the gate insulating layer, and an electrode provided on the organic semiconductor layer, a polyparaxylylene layer formed of a continuous polyparaxylylene film is formed on the surface of the gate insulating layer, between the gate insulating layer and the organic semiconductor layer, so as to face and contact with the organic semiconductor layer.
摘要翻译：本发明提供了一种有机薄膜晶体管，其不仅可以实现栅极绝缘层的表面的修改，而且可以实现栅极绝缘层由氧化物形成的情况，而且栅极绝缘层由因此可以显着提高晶体管的特性，以及在有机薄膜晶体管中对栅极绝缘层进行表面改性的方法。在栅极绝缘层，堆叠在栅极绝缘层上的有机半导体层和设置在有机半导体层上的电极的有机薄膜晶体管中，在栅极的表面上形成由连续的聚对二甲苯膜形成的聚对二甲苯层绝缘层，位于栅极绝缘层和有机半导体层之间，以与有机半导体层面对并接触。

4. 发明申请

US20080017400A1 Element, Thin Film Transistor and Sensor Using the Same, and Method of Manufacturing Element 审中-公开
标题翻译：元件，薄膜晶体管和使用其的传感器，以及制造元件的方法
公开(公告)号：US20080017400A1
公开(公告)日：2008-01-24
申请号：US11587129
申请日：2005-04-20
申请人： Hiroshi Yamamoto , Kunji Shigeto , Kazuhito Tsukagoshi , Iwao Yagi , Reizo Kato
发明人： Hiroshi Yamamoto , Kunji Shigeto , Kazuhito Tsukagoshi , Iwao Yagi , Reizo Kato
IPC分类号： H01B5/00 , C25D11/00 , C25D7/12
CPC分类号： H01L51/0508 , G01J1/42
摘要： Provided is an element which is formed of a conductor composed of a monocrystalline organic compound. Employed is an element including a pair of electrodes with a gap of 10 to 900 nm therebetween and a conductor composed of a monocrystalline organic compound disposed between the pair of electrodes.
摘要翻译：提供由由单晶有机化合物构成的导体形成的元件。使用包括间隔为10〜900nm的一对电极和由配置在该对电极之间的单晶有机化合物构成的导体的元件。

5. 发明申请

US20090039563A1 METHOD OF FORMING FINE PATTERN 审中-公开
标题翻译：形成精细图案的方法
公开(公告)号：US20090039563A1
公开(公告)日：2009-02-12
申请号：US12065246
申请日：2006-08-25
申请人： Motoki Okinaka , Kazuhito Tsukagoshi , Yoshinobu Aoyagi
发明人： Motoki Okinaka , Kazuhito Tsukagoshi , Yoshinobu Aoyagi
IPC分类号： B29C59/16
CPC分类号： G03F7/0002 , B81C1/00031 , B81C1/00111 , B81C2201/0152 , B81C2201/0153 , B82Y10/00 , B82Y40/00 , H01L21/31 , H01L21/3121 , H01L21/316 , H01L21/76817
摘要： A method of fine-pattern formation in which in forming a pattern, a fine pattern formed in a mold can be transferred to a pattering material in a short time at a low temperature and low pressure and, after the transfer of the fine pattern to the patterning material, the fine pattern formed in the patterning material does not readily deform. The method for fine-pattern formation comprises: a first step in which a mold having a fine structure with recesses/protrusions is pressed against a pattering material comprising a polysilane; a second step in which the patterning material is irradiated with ultraviolet to photooxidize the patterning material; a third in which the pressing of the mold against the patterning material is relieved and the mold is drawn from the pattering material; and a fourth step in which that surface of the patterning material to which the fine pattern has been transferred is irradiated with an oxygen plasma to oxidize the surface.
摘要翻译：精细图案形成方法在形成图案时，在模具中形成的精细图案可以在低温低压下在短时间内转印到图案材料，并且在精细图案转印到图案形成材料中形成的微细图案不容易变形。精细图案形成方法包括：第一步骤，其中具有凹陷/突起的精细结构的模具被压在包含聚硅烷的图案材料上; 第二步骤，其中图案形成材料被紫外线照射以对图案材料进行光氧化; 第三，其中将模具压靠在图案形成材料上被释放并且模具从图案材料中拉出; 以及第四步骤，其中已经转印有精细图案的图案形成材料的表面用氧等离子体照射以氧化该表面。

6. 发明申请

US20080203620A1 METHOD OF FORMING MINUTE PATTERN 审中-公开
标题翻译：形成分钟图案的方法
公开(公告)号：US20080203620A1
公开(公告)日：2008-08-28
申请号：US11845618
申请日：2007-08-27
申请人： Motoki Okinaka , Kazuhito Tsukagoshi , Yoshinobu Aoyagi , Hiroshi Tsushima
发明人： Motoki Okinaka , Kazuhito Tsukagoshi , Yoshinobu Aoyagi , Hiroshi Tsushima
IPC分类号： B29C35/08
CPC分类号： B29C35/0888 , B29C37/0053 , B29C2035/0827
摘要： There is provided a method for forming minute patterns ranging from nanometer scale to micrometer scale with high aspect ratio at one time under a single condition of low temperature, low pressure, and a short period of time. A method of forming a minute pattern according to the present invention includes: applying, onto a substrate, a patterning material containing a polysilane and a silicone compound; pressing a mold on which a predetermined minute pattern has been formed to the patterning material which has been applied onto the substrate; irradiating energy rays from a side of the substrate while the mold is contacted by press with the patterning material; releasing the mold; and irradiating the patterning material with energy rays from a side to which the mold has been pressed.
摘要翻译：提供一种在低温，低压和短时间的单一条件下一次形成从纳米尺度到微米级的高纵横比的微小图案的方法。根据本发明的形成微细图案的方法包括：在基材上涂布含有聚硅烷和硅氧烷化合物的图案形成材料; 将已经形成有预定的微小图案的模具按压到已经施加到基板上的图案形成材料上; 在模具与图案形成材料接触的同时，从基板侧照射能量射线; 释放模具; 并用能量射线照射图案形成材料，该能量射线从模具被按压的一侧。

7. 发明申请

US20090139752A1 ELECTRONIC DEVICE AND METHOD FOR PRODUCING ELECTRONIC DEVICE 失效
标题翻译：电子设备和用于生产电子设备的方法
公开(公告)号：US20090139752A1
公开(公告)日：2009-06-04
申请号：US12194106
申请日：2008-08-19
申请人： Hisao Miyazaki , Kazuhito Tsukagoshi , Syunsuke Odaka , Yoshinobu Aoyagi
发明人： Hisao Miyazaki , Kazuhito Tsukagoshi , Syunsuke Odaka , Yoshinobu Aoyagi
IPC分类号： H05K1/00 , B05D5/00
CPC分类号： H01L29/78684 , B82Y10/00 , H01L29/0665 , H01L29/0673 , H01L29/1606 , H01L29/4908 , H01L29/7781
摘要： Provided is a novel electronic device that comprises graphite, graphene or the like.An electronic device having a substrate, a layer comprising a 6-member ring-structured carbon homologue as the main ingredient, a pair of electrodes, a layer comprising aluminium oxide as the main ingredient and disposed between the pair of electrodes, and a layer comprising aluminium as the main ingredient, wherein the layer comprising aluminium oxide as the main ingredient is disposed between the layer comprising a 6-member ring-structured carbon homologue as the main ingredient and the layer comprising aluminium as the main ingredient so as to be in contact with the two layers.
摘要翻译：提供了一种包括石墨，石墨烯等的新型电子器件。具有基板的电子设备，以6元环结构的碳同系物为主要成分的层，一对电极，以氧化铝为主要成分并设置在该对电极之间的层，以及包含铝作为主要成分，其中以氧化铝为主要成分的层设置在包含6元环结构的碳同系物作为主要成分的层和包含铝作为主要成分的层之间以便接触与两层。

8. 发明申请

US20080203271A1 METHOD OF MANUFACTURING A REPLICA MOLD AND A REPLICA MOLD 审中-公开
标题翻译：制造复原模和复制模的方法
公开(公告)号：US20080203271A1
公开(公告)日：2008-08-28
申请号：US11845621
申请日：2007-08-27
申请人： Motoki Okinaka , Kazuhito Tsukagoshi , Yoshinobu Aoyagi , Hiroshi Tsushima
发明人： Motoki Okinaka , Kazuhito Tsukagoshi , Yoshinobu Aoyagi , Hiroshi Tsushima
IPC分类号： B29C39/10 , B29C33/08 , B29C35/08
CPC分类号： B29C33/3857 , B29C2035/0827 , B82Y10/00 , B82Y40/00 , G03F7/0002
摘要： There are provided a replica mold which is excellent in transferring a pattern of a master mold, and also has notably excellent hardness, transparency, heat resistance and chemical resistance, and a simple and inexpensive method of manufacturing the replica mold. A method of manufacturing a replica mold according to the present invention includes the steps of: applying, to a substrate, a replica mold material containing a polysilane and a silicone compound; pressing a master mold on which a predetermined minute pattern has been formed to the replica mold material which has been applied to the substrate; irradiating energy rays from a side of the substrate while the master mold is contacted by press with the replica mold material; releasing the master mold; and irradiating the replica mold material with energy rays from a side to which the master mold has been pressed.
摘要翻译：提供了转印母模图案的复制模具，并且还具有显着优异的硬度，透明度，耐热性和耐化学性，以及制造复制模具的简单且便宜的方法。根据本发明的制造复制模具的方法包括以下步骤：向基材施加含有聚硅烷和硅氧烷化合物的复制模具材料; 将已经形成预定微小图案的母模按压到已经施加到基底的复制模具材料; 在母模与复制模具材料接触的同时，从基板的一侧照射能量射线; 释放主模具; 并从原模被压制的一侧向能量射线照射复制模具材料。

9. 发明授权

US08043978B2 Electronic device and method for producing electronic device 失效
标题翻译：电子装置及其制造方法
公开(公告)号：US08043978B2
公开(公告)日：2011-10-25
申请号：US12194106
申请日：2008-08-19
申请人： Hisao Miyazaki , Kazuhito Tsukagoshi , Syunsuke Odaka , Yoshinobu Aoyagi
发明人： Hisao Miyazaki , Kazuhito Tsukagoshi , Syunsuke Odaka , Yoshinobu Aoyagi
IPC分类号： H01L21/316 , H01L21/473
CPC分类号： H01L29/78684 , B82Y10/00 , H01L29/0665 , H01L29/0673 , H01L29/1606 , H01L29/4908 , H01L29/7781
摘要： Provided is a novel electronic device that comprises graphite, graphene or the like.An electronic device having a substrate, a layer comprising a 6-member ring-structured carbon homologue as the main ingredient, a pair of electrodes, a layer comprising aluminium oxide as the main ingredient and disposed between the pair of electrodes, and a layer comprising aluminium as the main ingredient, wherein the layer comprising aluminium oxide as the main ingredient is disposed between the layer comprising a 6-member ring-structured carbon homologue as the main ingredient and the layer comprising aluminium as the main ingredient so as to be in contact with the two layers.
摘要翻译：提供了一种包括石墨，石墨烯等的新型电子器件。具有基板的电子设备，以6元环结构的碳同系物为主要成分的层，一对电极，以氧化铝为主要成分并设置在该对电极之间的层，以及包含铝作为主要成分，其中以氧化铝为主要成分的层设置在包含6元环结构的碳同系物作为主要成分的层和包含铝作为主要成分的层之间以便接触与两层。

10. 发明申请

US20100078639A1 THIN FILM SEMICONDUCTOR DEVICE FABRICATION METHOD AND THIN FILM SEMICONDUCTOR DEVICE 审中-公开
标题翻译：薄膜半导体器件制造方法和薄膜半导体器件
公开(公告)号：US20100078639A1
公开(公告)日：2010-04-01
申请号：US12523943
申请日：2008-01-28
申请人： Kazumasa Nomoto , Nobukazu Hirai , Ryoichi Yasuda , Takeo Minari , Kazuhito Tsukagoshi , Yoshinobu Aoyagi
发明人： Kazumasa Nomoto , Nobukazu Hirai , Ryoichi Yasuda , Takeo Minari , Kazuhito Tsukagoshi , Yoshinobu Aoyagi
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L51/001 , H01L51/0516 , H01L51/0529 , H01L51/0545
摘要： The present invention provides a method for making a thin film semiconductor device having a bottom-gate, bottom-contact-type thin film transistor structure finer in size with satisfactory characteristics, in which the interface between a gate insulating film and a thin film semiconductor layer can be maintained at satisfactory conditions without being affected by formation of source/drain electrodes. A first gate insulating film (7-1) covering a gate electrode (5) on a substrate (3) is formed, and a pair of source/drain electrodes (9) is formed on the first gate insulating film (7-1). Subsequently, a second gate insulating film (7-2) is selectively formed only on the first gate insulating film (7-2) exposed from the source/drain electrodes (9). Next, a thin film semiconductor layer (11) continuously covering from the source/drain electrodes (9) to the first gate insulating film (7-1) through the second gate insulating film (7-2) is formed while making contact with the source/drain electrodes (9). A method for making a thin film semiconductor device (1) is characterized as such.
摘要翻译：本发明提供一种制造薄膜半导体器件的方法，该薄膜半导体器件具有尺寸较小且具有令人满意的特性的底栅，底接触型薄膜晶体管结构，其中栅极绝缘膜和薄膜半导体层可以在令人满意的条件下保持不受源/漏电极形成的影响。形成覆盖基板（3）上的栅极（5）的第一栅极绝缘膜（7-1），在第一栅极绝缘膜（7-1）上形成有一对源极/漏极电极（9）。随后，仅在从源极/漏极（9）露出的第一栅极绝缘膜（7-2）上选择性地形成第二栅极绝缘膜（7-2）。接下来，形成通过第二栅极绝缘膜（7-2）从源极/漏极（9）连续地覆盖到第一栅极绝缘膜（7-1）的薄膜半导体层（11），同时与源极/漏极（9）。制造薄膜半导体器件（1）的方法的特征如下。

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