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1. 发明授权

US4121930A Nitrogen containing high speed steel obtained by powder metallurgical process 失效
标题翻译：通过粉末冶金工艺获得的含氮高速钢
公开(公告)号：US4121930A
公开(公告)日：1978-10-24
申请号：US755141
申请日：1976-12-29
申请人： Toru Yukawa , Nobuyasu Kawai , Katuhiko Honma , Hirofumi Fujimoto , Hiroshi Takigawa , Minoru Hirono , Masaru Ishii , Tsuneo Tatsuno
发明人： Toru Yukawa , Nobuyasu Kawai , Katuhiko Honma , Hirofumi Fujimoto , Hiroshi Takigawa , Minoru Hirono , Masaru Ishii , Tsuneo Tatsuno
IPC分类号： C22C33/02 , C22C38/00 , C22C38/12 , B22F3/00
CPC分类号： C22C38/12
摘要： The present invention relates to a nitrogen containing high speed steel obtained by the powder metallurgical process, which comprises at least 0.40% N, 1.6 to 15% V, C in an amount satisfying the relationship of 0.5 + 0.2V (%) .ltoreq. (C + N) .ltoreq. 0.8 + 0.2V (%), at least one element selected from the group consisting of up to 15% of Cr, up to 10% of Mo, up to 20% of W and up to 15% of Co with the balance iron.
摘要翻译：本发明涉及通过粉末冶金方法获得的含氮高速钢，其含有至少0.40％N，1.6至15％V，C，其量满足0.5 + 0.2V（％）的关系。（C + N）

2. 发明授权

US4140527A Nitrogen containing powder metallurgical tool steel 失效
标题翻译：含氮粉末冶金工具钢
公开(公告)号：US4140527A
公开(公告)日：1979-02-20
申请号：US799338
申请日：1977-05-23
申请人： Nobuyasu Kawai , Katuhiko Honma , Hirofumi Fujimoto , Hiroshi Takigawa , Tsuneo Tatsuno
发明人： Nobuyasu Kawai , Katuhiko Honma , Hirofumi Fujimoto , Hiroshi Takigawa , Tsuneo Tatsuno
IPC分类号： C22C33/02 , C22C38/00 , C22C38/02 , C22C38/08 , C22C38/10
CPC分类号： C22C33/0278 , C22C33/0292
摘要： A nitrogen containing powder metallurgical tool steel comprising at least 0.40% N, 1.6 - 15% V, C in an amount satisfying the relationship of0.2 + 0.2 V(%).ltoreq.(C + N)
摘要翻译：一种含氮粉末冶金工具钢，其含有满足0.2 + 0.2V（％）

3. 发明授权

US5445776A Method for producing high density sintered silicon nitride (Si.sub.3 N.sub. 4 失效
标题翻译：生产高密度烧结氮化硅（Si3N4）的方法
公开(公告)号：US5445776A
公开(公告)日：1995-08-29
申请号：US814806
申请日：1991-12-31
申请人： Katuhiko Honma , Tsuneo Tatsuno , Hiroshi Okada , Masato Moritoki , Takao Fujikawa
发明人： Katuhiko Honma , Tsuneo Tatsuno , Hiroshi Okada , Masato Moritoki , Takao Fujikawa
IPC分类号： C04B35/593 , C04B35/58
CPC分类号： C04B35/593 , C04B35/5935
摘要： The specification describes a method for producing high density sintered silicon nitride(Si.sub.3 N.sub.4) having a relative density of at least 98%. In a first step, silicon nitride powder is compacted into a desired shape. It is then presintered in a second step, generally, under normal pressure to obtain a presintered body having a relative density of at least 92%. In a third step, the presintered body is subjected to a hot isostatic pressing(HIP) in an inert gas atmosphere of 1500-2100.degree. C. and of nitrogen gas partial pressure of at least 500 atm. Since the presintering does not require any capsule, it is possible to produce high density sintered Si.sub.3 N.sub.4 of complex configurations. As a sintering aid, Y.sub.2 O.sub.3 --Al.sub.2 O.sub.3 --MgO system sintering aid is particularly effective. To improve the strength of sintered Si.sub.3 N.sub.4, it is effective to add a heat treatment step after the HIP and maintain the temperature of the sintered Si.sub.3 N.sub.4, above 500.degree. C. for a while. Between the second and third steps, the temperature of the presintered body is preferably maintained above 500.degree. C. These temperature controls are effective not only to improve the strength of sintered Si.sub.3 N.sub.4 but also to save the thermal energy and to shorten the production cycle.
摘要翻译：该说明书描述了一种生产相对密度至少为98％的高密度烧结氮化硅（Si3N4）的方法。在第一步骤中，氮化硅粉末被压制成所需的形状。通常在常压下第二步骤中预烧结，得到相对密度至少为92％的预烧结体。在第三步骤中，在1500-2100℃的惰性气体气氛和至少500atm的氮气分压下对预烧结体进行热等静压（HIP）。由于预烧结不需要任何胶囊，因此可以生产复合结构的高密度烧结Si 3 N 4。作为烧结助剂，Y2O3-Al2O3-MgO体系的烧结助剂特别有效。为了提高烧结Si3N4的强度，在HIP之后添加热处理步骤并将烧结的Si 3 N 4的温度保持在500℃以上一段时间是有效的。在第二和第三步骤之间，预烧结体的温度优选保持在500℃以上。这些温度控制不仅有效地提高了烧结Si 3 N 4的强度，而且有效地节约了热能并缩短了生产周期。

4. 发明授权

US5665291A Method for producing high density sintered silicon nitride(Si.sub.3 N.sub.4 ) 失效
标题翻译：生产高密度烧结氮化硅（Si3N4）的方法
公开(公告)号：US5665291A
公开(公告)日：1997-09-09
申请号：US463273
申请日：1995-06-05
申请人： Katuhiko Honma , Tsuneo Tatsuno , Hiroshi Okada , Masato Moritoki , Takao Fujikawa
发明人： Katuhiko Honma , Tsuneo Tatsuno , Hiroshi Okada , Masato Moritoki , Takao Fujikawa
IPC分类号： C04B35/593 , C04B35/584
CPC分类号： C04B35/593 , C04B35/5935
摘要： The specification describes a method for producing high density sintered silicon nitride (Si.sub.3 N.sub.4) having a relative density of at least 98%. In a first step, silicon nitride powder is compacted into a desired shape. It is then pre-sintered in a second step, generally, under normal pressure to obtain a presintered body having a relative density of at least 92%. In a third step, the presintered body is subjected to a hot isostatic pressing (HIP) in an inert gas atmosphere of 1500.degree.-2100.degree. C. and of nitrogen gas partial pressure of at least 500 atm. Since the presintering does not require any capsule, it is possible to produce high density sintered Si.sub.3 N.sub.4 of complex configurations. As a sintering aid, Y.sub.2 O.sub.3 --Al.sub.2 O.sub.3 --MgO system sintering aid is particularly effective. To improve the strength of sintered Si.sub.3 N.sub.4, it is effective to add a heat treatment step after the HIP and maintain the temperature of the sintered Si.sub.3 N.sub.4 above 500.degree. C. for a while. Between the second and third steps, the temperature of the presintered body is preferably maintained above 500.degree. C. These temperature controls are effective not only to improve the strength of sintered Si.sub.3 N.sub.4 but also to save the thermal energy and to shorten the production cycle.
摘要翻译：该说明书描述了一种生产相对密度至少为98％的高密度烧结氮化硅（Si3N4）的方法。在第一步骤中，氮化硅粉末被压制成所需的形状。通常在常压下在第二步骤中预烧结，得到相对密度至少为92％的预烧结体。在第三步骤中，将预烧结体在1500-2100℃的惰性气体气氛和至少500atm的氮气分压下进行热等静压（HIP）。由于预烧结不需要任何胶囊，因此可以生产复合结构的高密度烧结Si 3 N 4。作为烧结助剂，Y2O3-Al2O3-MgO体系的烧结助剂特别有效。为了提高烧结Si3N4的强度，在HIP之后添加热处理步骤并将烧结的Si 3 N 4的温度保持在500℃以上一段时间是有效的。在第二和第三步骤之间，预烧结体的温度优选保持在500℃以上。这些温度控制不仅有效地提高了烧结Si 3 N 4的强度，而且有效地节约了热能并缩短了生产周期。

5. 发明授权

US5603876A Method for producing high density sintered silicon nitride (SI.sub.3 N.sub. 4 失效
标题翻译：生产高密度烧结氮化硅（SI3N4）的方法
公开(公告)号：US5603876A
公开(公告)日：1997-02-18
申请号：US251052
申请日：1988-09-26
申请人： Katuhiko Honma , Tsuneo Tatsuno , Hiroshi Okada , Masato Moritoki , Takao Fujikawa
发明人： Katuhiko Honma , Tsuneo Tatsuno , Hiroshi Okada , Masato Moritoki , Takao Fujikawa
IPC分类号： C04B35/593 , C04B35/584
CPC分类号： C04B35/593 , C04B35/5935
摘要： The specification describes a method for producing high density sintered silicon nitride(Si.sub.3 N.sub.4) having a relative density of at least 98%. In a first step, silicon nitride powder is compacted into a desired shape. It is then presintered in a second step, generally, under normal pressure to obtain a presintered body having a relative density of at least 92%. In a third step, the presintered body is subjected to a hot isostatic pressing(HIP) in an inert gas atmosphere of 1500-2100.degree. C. and of nitrogen gas partial pressure of at least 500 atm. Since the presintering does not require any capsule, it is possible to produce high density sintered Si.sub.3 N.sub.4 of complex configurations. As a sintering aid, Y.sub.2 O.sub.3 -Al.sub.2 O.sub.3 -MgO system sintering aid is particularly effective. To improve the strength of sintered Si.sub.3 N.sub.4, it is effective to add a heat treatment step after the HIP and maintain the temperature of the sintered Si.sub.3 N.sub.4 above 500.degree. C. for a while. Between the second and third steps, the temperature of the presintered body is preferably maintained above 500.degree. C. These temperature controls are effective not only to improve the strength of sintered Si.sub.3 N.sub.4 but also to save the thermal energy and to shorten the production cycle.
摘要翻译：该说明书描述了一种生产相对密度至少为98％的高密度烧结氮化硅（Si3N4）的方法。在第一步骤中，氮化硅粉末被压制成所需的形状。通常在常压下第二步骤中预烧结，得到相对密度至少为92％的预烧结体。在第三步骤中，在1500-2100℃的惰性气体气氛和至少500atm的氮气分压下对预烧结体进行热等静压（HIP）。由于预烧结不需要任何胶囊，因此可以生产复合结构的高密度烧结Si 3 N 4。作为烧结助剂，Y2O3-Al2O3-MgO体系的烧结助剂特别有效。为了提高烧结Si3N4的强度，在HIP之后添加热处理步骤并将烧结的Si 3 N 4的温度保持在500℃以上一段时间是有效的。在第二和第三步骤之间，预烧结体的温度优选保持在500℃以上。这些温度控制不仅有效地提高了烧结Si 3 N 4的强度，而且有效地节约了热能并缩短了生产周期。

6. 发明授权

US5123935A Al.sub.2 O.sub.3 composites, process for producing them and throw-away tip made of Al.sub.2 O.sub.3 composites 失效
标题翻译： AL2 O3复合材料，生产AL2 O3复合材料及其制造方法
公开(公告)号：US5123935A
公开(公告)日：1992-06-23
申请号：US582858
申请日：1990-12-07
申请人： Moriyoshi Kanamaru , Tsuneo Tatsuno , Noboru Ohyama
发明人： Moriyoshi Kanamaru , Tsuneo Tatsuno , Noboru Ohyama
IPC分类号： C04B35/111 , C04B35/117 , C04B35/575 , C04B35/80
CPC分类号： C04B35/111 , C04B35/117 , C04B35/575 , C04B35/803
摘要： In Al.sub.2 O.sub.3 composites used for machining tools for difficult-cutting steels, etc., strength and toughness are increased by dispersing a Ti compound with an average grain size of not greater than 0.1 .mu.m into Al.sub.2 O.sub.3 particles with the average grain size of not greater than 1 .mu.m, and SiC whiskers are uniformly dispersed between each of Al.sub.2 O.sub.3 particles to form a nanocomposite structure.For the above-mentioned purpose, SiC whiskers containing 0.3 to 1.5% by weight of oxygen, dissolved uniformly in a solvent, are mixed with a starting Al.sub.2 O.sub.3 series powder containing Ti compounds to form a uniform mixture, which is then molded and sintered.
摘要翻译： PCT No.PCT / JP90 / 00213 Sec。 371 1990年12月7日第 102（e）1990年12月7日，PCT提交1990年2月22日PCT公布。出版物WO90 / 09969 1990年9月7日。在用于难切削钢等加工工具的Al2O3复合材料中，通过将平均粒径不大于0.1μm的Ti化合物分散在Al 2 O 3粒子中，从而提高强度和韧性平均粒径不大于1μm，SiC晶须均匀分散在Al2O3颗粒之间形成纳米复合结构。为了上述目的，将含有0.3〜1.5重量％的氧均匀溶解在溶剂中的SiC晶须与含有Ti化合物的起始Al2O3系粉末混合，形成均匀的混合物，然后将其成型并烧结。

7. 发明授权

US5538926A Alumina based ceramic material and method of manufacturing the same 失效
标题翻译：基于氧化铝的陶瓷材料及其制造方法
公开(公告)号：US5538926A
公开(公告)日：1996-07-23
申请号：US360086
申请日：1994-12-20
申请人： Takehiro Tsuchida , Tsuneo Tatsuno , Moriyoshi Kanamaru
发明人： Takehiro Tsuchida , Tsuneo Tatsuno , Moriyoshi Kanamaru
IPC分类号： B23B27/14 , B23P15/28 , C04B35/10 , C04B35/117 , C04B35/80 , C04B35/76
CPC分类号： C04B35/803 , C04B35/117
摘要： A mixed powder containing: 5-30 wt % of SiC whiskers; 3-30 wt % of a sintering auxiliary agent composed of one kind or more of oxides of Mg, Si, Ca, Ti, Zr, Cr, Ni, Y and rare earth elements; and an Al.sub.2 O.sub.3 powder as a base material; or further containing 0.5-40 wt % of one kind or more of compounds composed of one kind or more of transient elements in the groups IVa, Va, and VIa of the periodic table and one kind or more of C, N and B, are compacted and subjected to pressureless-sintering in a nitrogen containing inert gas atmosphere at a temperature between 1500.degree. and 1900.degree. C. With this method, the SiC whiskers containing Al.sub.2 O.sub.3 based ceramic material, which is densified and has a sufficient strength and toughness, can be formed in a complex shape and a large size.
摘要翻译：含有5-30重量％的SiC晶须的混合粉末; 3-30重量％由Mg，Si，Ca，Ti，Zr，Cr，Ni，Y和稀土元素的一种或多种氧化物构成的烧结助剂; 和作为基材的Al 2 O 3粉末; 或进一步含有0.5-40重量％的一种或多种由元素周期表IVa，Va和VIa族中的一种或多种瞬态元素组成的化合物和C，N和B中的一种或多种。压制并在含氮惰性气体气氛中在1500〜1900℃的温度下进行无压烧结。通过这种方法，含有Al2O3基陶瓷材料的SiC晶须被致密化并具有足够的强度和韧性，可以形成复杂的形状和大尺寸。

8. 发明授权

US4541975A Method for producing high strength sintered silicon carbide 失效
标题翻译：生产高强度烧结碳化硅的方法
公开(公告)号：US4541975A
公开(公告)日：1985-09-17
申请号：US388657
申请日：1982-06-15
申请人： Katsuhiko Honma , Tsuneo Tatsuno , Hiroshi Okada
发明人： Katsuhiko Honma , Tsuneo Tatsuno , Hiroshi Okada
IPC分类号： C04B35/565 , C04B35/571 , C04B35/645 , C04B35/56
CPC分类号： C04B35/6455 , C04B35/571
摘要： A method for producing a high strength sintered silicon carbide, the method comprising: molding a mixture of silicon carbide powder and a sintering aid into a green compact of a predetermined shape: preliminarily sintering the green compact to obtain a preliminarily sintered compact having a relative density higher than 80%; charging the preliminarily sintered compact in a HIP equipment without using a capsule; and subject the preliminarily sintered compact to a HIP treatment in a high-temperature and high-pressure N.sub.2 gas atmosphere maintaining a pressure higher than 500 atms and a temperature in the range of 1400.degree.-2300.degree. C.
摘要翻译：一种高强度烧结碳化硅的制造方法，其特征在于，包括：将碳化硅粉末和烧结助剂的混合物成型为规定形状的生坯;预先烧结所述生坯，得到相对密度高于80％在不使用胶囊的情况下将预烧结的成型体装入HIP设备; 并将预烧结体在保持压力高于500atms，温度在1400〜-2300℃的高温高压N2气氛中进行HIP处理。

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