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    • 1. 发明授权
    • Method for producing high density sintered silicon nitride (Si.sub.3 N.sub.
4
    • 生产高密度烧结氮化硅(Si3N4)的方法
    • US5445776A
    • 1995-08-29
    • US814806
    • 1991-12-31
    • Katuhiko HonmaTsuneo TatsunoHiroshi OkadaMasato MoritokiTakao Fujikawa
    • Katuhiko HonmaTsuneo TatsunoHiroshi OkadaMasato MoritokiTakao Fujikawa
    • C04B35/593C04B35/58
    • C04B35/593C04B35/5935
    • The specification describes a method for producing high density sintered silicon nitride(Si.sub.3 N.sub.4) having a relative density of at least 98%. In a first step, silicon nitride powder is compacted into a desired shape. It is then presintered in a second step, generally, under normal pressure to obtain a presintered body having a relative density of at least 92%. In a third step, the presintered body is subjected to a hot isostatic pressing(HIP) in an inert gas atmosphere of 1500-2100.degree. C. and of nitrogen gas partial pressure of at least 500 atm. Since the presintering does not require any capsule, it is possible to produce high density sintered Si.sub.3 N.sub.4 of complex configurations. As a sintering aid, Y.sub.2 O.sub.3 --Al.sub.2 O.sub.3 --MgO system sintering aid is particularly effective. To improve the strength of sintered Si.sub.3 N.sub.4, it is effective to add a heat treatment step after the HIP and maintain the temperature of the sintered Si.sub.3 N.sub.4, above 500.degree. C. for a while. Between the second and third steps, the temperature of the presintered body is preferably maintained above 500.degree. C. These temperature controls are effective not only to improve the strength of sintered Si.sub.3 N.sub.4 but also to save the thermal energy and to shorten the production cycle.
    • 该说明书描述了一种生产相对密度至少为98%的高密度烧结氮化硅(Si3N4)的方法。 在第一步骤中,氮化硅粉末被压制成所需的形状。 通常在常压下第二步骤中预烧结,得到相对密度至少为92%的预烧结体。 在第三步骤中,在1500-2100℃的惰性气体气氛和至少500atm的氮气分压下对预烧结体进行热等静压(HIP)。 由于预烧结不需要任何胶囊,因此可以生产复合结构的高密度烧结Si 3 N 4。 作为烧结助剂,Y2O3-Al2O3-MgO体系的烧结助剂特别有效。 为了提高烧结Si3N4的强度,在HIP之后添加热处理步骤并将烧结的Si 3 N 4的温度保持在500℃以上一段时间是有效的。 在第二和第三步骤之间,预烧结体的温度优选保持在500℃以上。这些温度控制不仅有效地提高了烧结Si 3 N 4的强度,而且有效地节约了热能并缩短了生产周期。
    • 2. 发明授权
    • Method for producing high density sintered silicon nitride(Si.sub.3 N.sub.4
)
    • 生产高密度烧结氮化硅(Si3N4)的方法
    • US5665291A
    • 1997-09-09
    • US463273
    • 1995-06-05
    • Katuhiko HonmaTsuneo TatsunoHiroshi OkadaMasato MoritokiTakao Fujikawa
    • Katuhiko HonmaTsuneo TatsunoHiroshi OkadaMasato MoritokiTakao Fujikawa
    • C04B35/593C04B35/584
    • C04B35/593C04B35/5935
    • The specification describes a method for producing high density sintered silicon nitride (Si.sub.3 N.sub.4) having a relative density of at least 98%. In a first step, silicon nitride powder is compacted into a desired shape. It is then pre-sintered in a second step, generally, under normal pressure to obtain a presintered body having a relative density of at least 92%. In a third step, the presintered body is subjected to a hot isostatic pressing (HIP) in an inert gas atmosphere of 1500.degree.-2100.degree. C. and of nitrogen gas partial pressure of at least 500 atm. Since the presintering does not require any capsule, it is possible to produce high density sintered Si.sub.3 N.sub.4 of complex configurations. As a sintering aid, Y.sub.2 O.sub.3 --Al.sub.2 O.sub.3 --MgO system sintering aid is particularly effective. To improve the strength of sintered Si.sub.3 N.sub.4, it is effective to add a heat treatment step after the HIP and maintain the temperature of the sintered Si.sub.3 N.sub.4 above 500.degree. C. for a while. Between the second and third steps, the temperature of the presintered body is preferably maintained above 500.degree. C. These temperature controls are effective not only to improve the strength of sintered Si.sub.3 N.sub.4 but also to save the thermal energy and to shorten the production cycle.
    • 该说明书描述了一种生产相对密度至少为98%的高密度烧结氮化硅(Si3N4)的方法。 在第一步骤中,氮化硅粉末被压制成所需的形状。 通常在常压下在第二步骤中预烧结,得到相对密度至少为92%的预烧结体。 在第三步骤中,将预烧结体在1500-2100℃的惰性气体气氛和至少500atm的氮气分压下进行热等静压(HIP)。 由于预烧结不需要任何胶囊,因此可以生产复合结构的高密度烧结Si 3 N 4。 作为烧结助剂,Y2O3-Al2O3-MgO体系的烧结助剂特别有效。 为了提高烧结Si3N4的强度,在HIP之后添加热处理步骤并将烧结的Si 3 N 4的温度保持在500℃以上一段时间是有效的。 在第二和第三步骤之间,预烧结体的温度优选保持在500℃以上。这些温度控制不仅有效地提高了烧结Si 3 N 4的强度,而且有效地节约了热能并缩短了生产周期。
    • 3. 发明授权
    • Method for producing high density sintered silicon nitride (SI.sub.3 N.sub.
4
    • 生产高密度烧结氮化硅(SI3N4)的方法
    • US5603876A
    • 1997-02-18
    • US251052
    • 1988-09-26
    • Katuhiko HonmaTsuneo TatsunoHiroshi OkadaMasato MoritokiTakao Fujikawa
    • Katuhiko HonmaTsuneo TatsunoHiroshi OkadaMasato MoritokiTakao Fujikawa
    • C04B35/593C04B35/584
    • C04B35/593C04B35/5935
    • The specification describes a method for producing high density sintered silicon nitride(Si.sub.3 N.sub.4) having a relative density of at least 98%. In a first step, silicon nitride powder is compacted into a desired shape. It is then presintered in a second step, generally, under normal pressure to obtain a presintered body having a relative density of at least 92%. In a third step, the presintered body is subjected to a hot isostatic pressing(HIP) in an inert gas atmosphere of 1500-2100.degree. C. and of nitrogen gas partial pressure of at least 500 atm. Since the presintering does not require any capsule, it is possible to produce high density sintered Si.sub.3 N.sub.4 of complex configurations. As a sintering aid, Y.sub.2 O.sub.3 -Al.sub.2 O.sub.3 -MgO system sintering aid is particularly effective. To improve the strength of sintered Si.sub.3 N.sub.4, it is effective to add a heat treatment step after the HIP and maintain the temperature of the sintered Si.sub.3 N.sub.4 above 500.degree. C. for a while. Between the second and third steps, the temperature of the presintered body is preferably maintained above 500.degree. C. These temperature controls are effective not only to improve the strength of sintered Si.sub.3 N.sub.4 but also to save the thermal energy and to shorten the production cycle.
    • 该说明书描述了一种生产相对密度至少为98%的高密度烧结氮化硅(Si3N4)的方法。 在第一步骤中,氮化硅粉末被压制成所需的形状。 通常在常压下第二步骤中预烧结,得到相对密度至少为92%的预烧结体。 在第三步骤中,在1500-2100℃的惰性气体气氛和至少500atm的氮气分压下对预烧结体进行热等静压(HIP)。 由于预烧结不需要任何胶囊,因此可以生产复合结构的高密度烧结Si 3 N 4。 作为烧结助剂,Y2O3-Al2O3-MgO体系的烧结助剂特别有效。 为了提高烧结Si3N4的强度,在HIP之后添加热处理步骤并将烧结的Si 3 N 4的温度保持在500℃以上一段时间是有效的。 在第二和第三步骤之间,预烧结体的温度优选保持在500℃以上。这些温度控制不仅有效地提高了烧结Si 3 N 4的强度,而且有效地节约了热能并缩短了生产周期。