专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US09473049B2 Induction heating apparatus and power generation system comprising the same 有权
标题翻译：感应加热装置及其发电系统
公开(公告)号：US09473049B2
公开(公告)日：2016-10-18
申请号：US14123807
申请日：2012-05-30
申请人： Toru Okazaki , Tetsuji Matsuo , Takeshi Mifune
发明人： Toru Okazaki , Tetsuji Matsuo , Takeshi Mifune
IPC分类号： B60L1/02 , F01K15/00 , H02N99/00 , F03D9/00 , H05B6/10
CPC分类号： H02N99/00 , F03D9/22 , F03D9/25 , H05B6/108 , H05B6/109 , Y02E10/72 , Y02E10/725
摘要： An induction heating apparatus includes a rotor having a rotation shaft, and a stator having a heating portion disposed at a distance from the rotor. A coil that generates magnetic flux in a direction of the heating portion is provided in the rotor. The heating portion is formed of a composite material of a magnetic material and a conductive material, and has a structure in which a magnetic material portion and a conductive material portion are combined. When the coil is in a position opposed to the heating portion, a cross-sectional area of the magnetic material portion is smaller than an area of linkage of magnetic flux generated by the coil in the heating portion, and the conductive material portion is disposed to surround a periphery of the magnetic material portion. A flow passage in which the heating medium circulates is provided in the heating portion.
摘要翻译：感应加热装置包括具有旋转轴的转子和具有与转子一定距离设置的加热部的定子。在转子中设置有沿加热部的方向产生磁通的线圈。加热部由磁性材料和导电材料的复合材料形成，并且具有其中组合有磁性材料部分和导电材料部分的结构。当线圈处于与加热部分相对的位置时，磁性材料部分的横截面面积小于加热部分中线圈产生的磁通量的连接面积，导电材料部分设置在围绕磁性材料部分的周边。在加热部中设置有加热介质循环的流路。

2. 发明申请

US20140110938A1 INDUCTION HEATING APPARATUS AND POWER GENERATION SYSTEM COMPRISING THE SAME 有权
标题翻译：感应加热装置和包括其的发电系统
公开(公告)号：US20140110938A1
公开(公告)日：2014-04-24
申请号：US14123807
申请日：2012-05-30
申请人： Toru Okazaki , Tetsuji Matsuo , Takeshi Mifune
发明人： Toru Okazaki , Tetsuji Matsuo , Takeshi Mifune
IPC分类号： H05B6/10 , H02N99/00
CPC分类号： H02N99/00 , F03D9/22 , F03D9/25 , H05B6/108 , H05B6/109 , Y02E10/72 , Y02E10/725
摘要： An induction heating apparatus includes a rotor having a rotation shaft, and a stator having a heating portion disposed at a distance from the rotor. A coil that generates magnetic flux in a direction of the heating portion is provided in the rotor. The heating portion is formed of a composite material of a magnetic material and a conductive material, and has a structure in which a magnetic material portion and a conductive material portion are combined. When the coil is in a position opposed to the heating portion, a cross-sectional area of the magnetic material portion is smaller than an area of linkage of magnetic flux generated by the coil in the heating portion, and the conductive material portion is disposed to surround a periphery of the magnetic material portion. A flow passage in which the heating medium circulates is provided in the heating portion.
摘要翻译：感应加热装置包括具有旋转轴的转子和具有与转子一定距离设置的加热部的定子。在转子中设置有沿加热部的方向产生磁通的线圈。加热部由磁性材料和导电材料的复合材料形成，并且具有磁性材料部分和导电材料部分组合的结构。当线圈处于与加热部分相对的位置时，磁性材料部分的横截面面积小于加热部分中线圈产生的磁通量的连接面积，导电材料部分设置在围绕磁性材料部分的周边。在加热部中设置有加热介质循环的流路。

3. 发明申请

US20070114515A1 NITRIDE SEMICONDUCTOR DEVICE HAVING A SILVER-BASE ALLOY ELECTRODE 审中-公开
标题翻译：具有银基合金电极的氮化物半导体器件
公开(公告)号：US20070114515A1
公开(公告)日：2007-05-24
申请号：US11623257
申请日：2007-01-15
申请人： Hidekazu Aoyagi , Tetsuji Matsuo , Tetsuji Moku , Mikio Tazima
发明人： Hidekazu Aoyagi , Tetsuji Matsuo , Tetsuji Moku , Mikio Tazima
IPC分类号： H01L29/06
CPC分类号： H01L33/42 , H01L33/32 , H01L33/44
摘要： An LED is disclosed which comprises a nitride-made main semiconductor region formed on a substrate for generating light, and an electrode formed on the main semiconductor region to a thickness sufficiently small to transmit the light from the main semiconductor region. The electrode is made from a silver-base alloy, rather than from silver only, that contains an additive or additives selected to protect the electrode against oxidation and/or sulfurization and to enhance the chemical stability of the electrode without loss in contact ohmicity.
摘要翻译：公开了一种LED，其包括形成在用于产生光的基板上的氮化物制成的主半导体区域，以及形成在主半导体区域上的电极，其厚度足够小以透射来自主半导体区域的光。电极由银基合金制成，而不是仅由银制成，其包含添加剂或选择用于保护电极免受氧化和/或硫化的添加剂和增强电极的化学稳定性而不损失接触欧姆度。

4. 发明申请

US20060065901A1 Migration-proof light-emitting semiconductor device and method of fabrication 审中-公开
标题翻译：防偏移发光半导体器件及其制造方法
公开(公告)号：US20060065901A1
公开(公告)日：2006-03-30
申请号：US11233903
申请日：2005-09-23
申请人： Hidekazu Aoyagi , Takashi Kato , Tetsuji Matsuo
发明人： Hidekazu Aoyagi , Takashi Kato , Tetsuji Matsuo
IPC分类号： H01L33/00 , H01L31/12
CPC分类号： H01L33/44 , H01L24/32 , H01L33/0079 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/73265 , H01L2924/01012 , H01L2924/01029 , H01L2924/0133 , H01L2924/12041 , H01L2924/00 , H01L2924/01031 , H01L2924/01032 , H01L2924/01079 , H01L2924/3512 , H01L2924/00014
摘要： An LED has a light-generating semiconductor region formed on an electroconductive baseplate via a reflector layer of silver or silver-base alloy. The light-generating semiconductor region has an active layer between claddings of opposite conductivity types. An anti-migration sheath envelopes either or both of the reflector layer and light-generating semiconductor region in order to prevent the reflector metal from migrating onto the semiconductor region with the consequent possible short-circuiting of the claddings of the active layer.
摘要翻译： LED具有通过银或银基合金的反射层形成在导电基板上的发光半导体区域。光产生半导体区域具有相反导电类型的包层之间的有源层。为了防止反射体金属迁移到半导体区域上，抗迁移护套包围反射层和发光半导体区域中的一个或两者，从而导致有源层的包层的短路。

5. 发明授权

US08569796B2 Semiconductor wafer and semiconductor device having multilayered nitride semiconductor layer 有权
标题翻译：具有多层氮化物半导体层的半导体晶片和半导体器件
公开(公告)号：US08569796B2
公开(公告)日：2013-10-29
申请号：US13314466
申请日：2011-12-08
申请人： Tetsuji Matsuo
发明人： Tetsuji Matsuo
IPC分类号： H01L29/06
CPC分类号： H01L29/7787 , H01L29/2003 , H01L33/06 , H01L33/32
摘要： A semiconductor wafer includes a multilayered film having a structure in which nondoped first nitride semiconductor layers and nondoped second nitride semiconductor layers with a larger lattice constant than the first nitride semiconductor layer are laminated alternately, and a nondoped third nitride semiconductor layer which is located on the multilayered film and has a larger lattice constant than the first nitride semiconductor layer, wherein the semiconductor wafer has conductivity in a film-thickness direction.
摘要翻译：半导体晶片包括具有这样的结构的多层膜，其中非掺杂的第一氮化物半导体层和具有比第一氮化物半导体层更大的晶格常数的非掺杂的第二氮化物半导体层交替层叠，并且非掺杂的第三氮化物半导体层位于并且具有比第一氮化物半导体层更大的晶格常数，其中半导体晶片在膜厚度方向上具有导电性。

6. 发明申请

US20080261340A1 SURFACE-ROUGHENING METHOD 有权
标题翻译：表面粗糙化方法
公开(公告)号：US20080261340A1
公开(公告)日：2008-10-23
申请号：US12104097
申请日：2008-04-16
申请人： Tetsuji Matsuo , Mikio Tazima , Takashi Kato
发明人： Tetsuji Matsuo , Mikio Tazima , Takashi Kato
IPC分类号： H01L33/00 , H01L21/302
CPC分类号： H01L33/22 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48472 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
摘要： The method is disclosed as applied to roughening the light-emitting surface of an LED wafer for reduction of the internal total reflection of the light generated. A masking film of silver is first deposited on the surface of a wafer to be diced into LED chips. Then the masking film is heated to cause its coagulation into discrete particles. Then, using the silver particles as a mask, the wafer surface is dry etched to create pits therein. The deposition of silver on the wafer surface and its thermal coagulation into particles may be either successive or concurrent.
摘要翻译：公开了用于粗糙化LED晶片的发光表面以减少所产生的光的内部全反射的方法。首先将银掩模膜沉积在晶片的表面上以切割成LED芯片。然后加热掩蔽膜使其凝结成离散的颗粒。然后，使用银颗粒作为掩模，干燥蚀刻晶片表面以在其中产生凹坑。银在晶片表面上的沉积及其热凝固成颗粒可以是连续的或同时的。

7. 发明授权

US08217408B2 Semiconductor light emitting device 失效
标题翻译：半导体发光器件
公开(公告)号：US08217408B2
公开(公告)日：2012-07-10
申请号：US12407093
申请日：2009-03-19
申请人： Tetsuji Matsuo
发明人： Tetsuji Matsuo
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/38 , H01L2933/0016
摘要： A semiconductor light emitting device includes: a conductive substrate; a semiconductor light emitting layer which includes a first semiconductor layer formed on one surface of the conductive substrate and having a first conductivity type, and a second semiconductor layer formed on the first semiconductor layer and having a second conductivity type opposite to the first conductivity type; first light emitting spots which are alternately arranged around a periphery of the semiconductor light emitting layer and emitting light to an exterior from the semiconductor light emitting layer; second light emitting spots having surfaces intersecting with the first light emitting spots and emitting light at an amount smaller than an amount of light emitted via the first light emitting spots; and wirings arranged along the second light emitting spots and electrically short circuiting an area between the first light emitting layer and the surfaces of the conductive substrate.
摘要翻译：一种半导体发光器件包括：导电衬底; 半导体发光层，其包括形成在所述导电基板的一个表面上并具有第一导电类型的第一半导体层，以及形成在所述第一半导体层上并具有与所述第一导电类型相反的第二导电类型的第二半导体层; 第一发光点，交替地布置在半导体发光层的周围并从该半导体发光层向外部发光; 第二发光点具有与第一发光点相交的表面，并以比通过第一发光点发射的光量少的量发光; 以及沿着第二发光点布置的布线，并且使第一发光层和导电基板的表面之间的区域电短路。

8. 发明授权

US07659553B2 Light-emitting semiconductor device protected against reflector metal migration 有权
标题翻译：发光半导体器件防止反射器金属迁移
公开(公告)号：US07659553B2
公开(公告)日：2010-02-09
申请号：US11764543
申请日：2007-06-18
申请人： Takashi Kato , Junji Sato , Tetsuji Matsuo
发明人： Takashi Kato , Junji Sato , Tetsuji Matsuo
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/387 , H01L33/46 , H01L2933/0016
摘要： An LED has a light-generating semiconductor region formed on a baseplate via a metal-made reflector layer. The light-generating semiconductor region has an active layer sandwiched between a pair of claddings of opposite conductivity types. An annular marginal space is left around the reflector layer between the light-generating semiconductor region and the substrate. In order to preclude the thermal migration of the reflector metal onto the side surfaces of the light-generating semiconductor region, with a possible short-circuiting of the pair of claddings across the active layer, an anti-migration seal is received in the annular marginal space created around the reflector layer between the light-generating semiconductor region and the baseplate.
摘要翻译： LED具有通过金属制的反射层在基板上形成的发光半导体区域。光产生半导体区域具有夹在一对相反导电类型的包层之间的有源层。在发光半导体区域和衬底之间的反射器层周围留有环形边缘空间。为了防止反射器金属在发光半导体区域的侧表面上的热迁移，通过跨越有源层的一对包层的可能的短路，反向移动密封件被接收在环形边缘在发光半导体区域和基板之间围绕反射器层产生的空间。

9. 发明申请

US20050184300A1 Light-emitting semiconductor device and method of fabrication 有权
标题翻译：发光半导体器件及其制造方法
公开(公告)号：US20050184300A1
公开(公告)日：2005-08-25
申请号：US11058942
申请日：2005-02-16
申请人： Mikio Tazima , Masahiro Sato , Hidekazu Aoyagi , Tetsuji Matsuo
发明人： Mikio Tazima , Masahiro Sato , Hidekazu Aoyagi , Tetsuji Matsuo
IPC分类号： H01L29/22 , H01L33/06 , H01L33/14 , H01L33/32 , H01L33/42 , H01L33/46
CPC分类号： H01L33/30 , H01L33/14 , H01L33/405 , H01L33/42 , H01L33/46
摘要： An LED includes a semiconductor region having an active layer sandwiched between two confining layers of opposite conductivity types for generating heat. A cathode is arranged centrally on one of the opposite major surfaces of the semiconductor region from which is emitted the light. Attached to the other major surface of the semiconductor region, via an ohmic contact layer, is a reflective metal layer for reflecting the light that has traversed the ohmic contact layer, back toward the semiconductor region. A transparent antidiffusion layer is interposed between the ohmic contact layer and the reflective layer in order to prevent the ohmic contact layer and the reflective layer from thermally diffusing from one into the other to the impairment of the reflectivity of the reflective layer.
摘要翻译： LED包括半导体区域，其具有夹在相反导电类型的两个限制层之间的活性层，用于产生热量。阴极被布置在半导体区域的相对的主表面之一的中心上，从其发射光。通过欧姆接触层附着在半导体区域的另一个主表面上，是反射金属层，用于反射穿过欧姆接触层的光，朝向半导体区域。在欧姆接触层和反射层之间插入透明的反扩散层，以防止欧姆接触层和反射层从一个扩散到另一个到反射层的反射率的损害。

10. 发明授权

US07687323B2 Surface-roughening method 有权
标题翻译：表面粗糙化方法
公开(公告)号：US07687323B2
公开(公告)日：2010-03-30
申请号：US12104097
申请日：2008-04-16
申请人： Tetsuji Matsuo , Mikio Tazima , Takashi Kato
发明人： Tetsuji Matsuo , Mikio Tazima , Takashi Kato
IPC分类号： H01L21/20
CPC分类号： H01L33/22 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48472 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
摘要： The method is disclosed as applied to roughening the light-emitting surface of an LED wafer for reduction of the internal total reflection of the light generated. A masking film of silver is first deposited on the surface of a wafer to be diced into LED chips. Then the masking film is heated to cause its coagulation into discrete particles. Then, using the silver particles as a mask, the wafer surface is dry etched to create pits therein. The deposition of silver on the wafer surface and its thermal coagulation into particles may be either successive or concurrent.
摘要翻译：公开了用于粗糙化LED晶片的发光表面以减少所产生的光的内部全反射的方法。首先将银掩模膜沉积在晶片的表面上以切割成LED芯片。然后加热掩蔽膜使其凝结成离散的颗粒。然后，使用银颗粒作为掩模，干燥蚀刻晶片表面以在其中产生凹坑。银在晶片表面上的沉积及其热凝固成颗粒可以是连续的或同时的。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式