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1. 发明申请

US20080261340A1 SURFACE-ROUGHENING METHOD 有权
标题翻译：表面粗糙化方法
公开(公告)号：US20080261340A1
公开(公告)日：2008-10-23
申请号：US12104097
申请日：2008-04-16
申请人： Tetsuji Matsuo , Mikio Tazima , Takashi Kato
发明人： Tetsuji Matsuo , Mikio Tazima , Takashi Kato
IPC分类号： H01L33/00 , H01L21/302
CPC分类号： H01L33/22 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48472 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
摘要： The method is disclosed as applied to roughening the light-emitting surface of an LED wafer for reduction of the internal total reflection of the light generated. A masking film of silver is first deposited on the surface of a wafer to be diced into LED chips. Then the masking film is heated to cause its coagulation into discrete particles. Then, using the silver particles as a mask, the wafer surface is dry etched to create pits therein. The deposition of silver on the wafer surface and its thermal coagulation into particles may be either successive or concurrent.
摘要翻译：公开了用于粗糙化LED晶片的发光表面以减少所产生的光的内部全反射的方法。首先将银掩模膜沉积在晶片的表面上以切割成LED芯片。然后加热掩蔽膜使其凝结成离散的颗粒。然后，使用银颗粒作为掩模，干燥蚀刻晶片表面以在其中产生凹坑。银在晶片表面上的沉积及其热凝固成颗粒可以是连续的或同时的。

2. 发明授权

US07687323B2 Surface-roughening method 有权
标题翻译：表面粗糙化方法
公开(公告)号：US07687323B2
公开(公告)日：2010-03-30
申请号：US12104097
申请日：2008-04-16
申请人： Tetsuji Matsuo , Mikio Tazima , Takashi Kato
发明人： Tetsuji Matsuo , Mikio Tazima , Takashi Kato
IPC分类号： H01L21/20
CPC分类号： H01L33/22 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48472 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
摘要： The method is disclosed as applied to roughening the light-emitting surface of an LED wafer for reduction of the internal total reflection of the light generated. A masking film of silver is first deposited on the surface of a wafer to be diced into LED chips. Then the masking film is heated to cause its coagulation into discrete particles. Then, using the silver particles as a mask, the wafer surface is dry etched to create pits therein. The deposition of silver on the wafer surface and its thermal coagulation into particles may be either successive or concurrent.
摘要翻译：公开了用于粗糙化LED晶片的发光表面以减少所产生的光的内部全反射的方法。首先将银掩模膜沉积在晶片的表面上以切割成LED芯片。然后加热掩蔽膜使其凝结成离散的颗粒。然后，使用银颗粒作为掩模，干燥蚀刻晶片表面以在其中产生凹坑。银在晶片表面上的沉积及其热凝固成颗粒可以是连续的或同时的。

3. 发明申请

US20050184300A1 Light-emitting semiconductor device and method of fabrication 有权
标题翻译：发光半导体器件及其制造方法
公开(公告)号：US20050184300A1
公开(公告)日：2005-08-25
申请号：US11058942
申请日：2005-02-16
申请人： Mikio Tazima , Masahiro Sato , Hidekazu Aoyagi , Tetsuji Matsuo
发明人： Mikio Tazima , Masahiro Sato , Hidekazu Aoyagi , Tetsuji Matsuo
IPC分类号： H01L29/22 , H01L33/06 , H01L33/14 , H01L33/32 , H01L33/42 , H01L33/46
CPC分类号： H01L33/30 , H01L33/14 , H01L33/405 , H01L33/42 , H01L33/46
摘要： An LED includes a semiconductor region having an active layer sandwiched between two confining layers of opposite conductivity types for generating heat. A cathode is arranged centrally on one of the opposite major surfaces of the semiconductor region from which is emitted the light. Attached to the other major surface of the semiconductor region, via an ohmic contact layer, is a reflective metal layer for reflecting the light that has traversed the ohmic contact layer, back toward the semiconductor region. A transparent antidiffusion layer is interposed between the ohmic contact layer and the reflective layer in order to prevent the ohmic contact layer and the reflective layer from thermally diffusing from one into the other to the impairment of the reflectivity of the reflective layer.
摘要翻译： LED包括半导体区域，其具有夹在相反导电类型的两个限制层之间的活性层，用于产生热量。阴极被布置在半导体区域的相对的主表面之一的中心上，从其发射光。通过欧姆接触层附着在半导体区域的另一个主表面上，是反射金属层，用于反射穿过欧姆接触层的光，朝向半导体区域。在欧姆接触层和反射层之间插入透明的反扩散层，以防止欧姆接触层和反射层从一个扩散到另一个到反射层的反射率的损害。

4. 发明申请

US20070114515A1 NITRIDE SEMICONDUCTOR DEVICE HAVING A SILVER-BASE ALLOY ELECTRODE 审中-公开
标题翻译：具有银基合金电极的氮化物半导体器件
公开(公告)号：US20070114515A1
公开(公告)日：2007-05-24
申请号：US11623257
申请日：2007-01-15
申请人： Hidekazu Aoyagi , Tetsuji Matsuo , Tetsuji Moku , Mikio Tazima
发明人： Hidekazu Aoyagi , Tetsuji Matsuo , Tetsuji Moku , Mikio Tazima
IPC分类号： H01L29/06
CPC分类号： H01L33/42 , H01L33/32 , H01L33/44
摘要： An LED is disclosed which comprises a nitride-made main semiconductor region formed on a substrate for generating light, and an electrode formed on the main semiconductor region to a thickness sufficiently small to transmit the light from the main semiconductor region. The electrode is made from a silver-base alloy, rather than from silver only, that contains an additive or additives selected to protect the electrode against oxidation and/or sulfurization and to enhance the chemical stability of the electrode without loss in contact ohmicity.
摘要翻译：公开了一种LED，其包括形成在用于产生光的基板上的氮化物制成的主半导体区域，以及形成在主半导体区域上的电极，其厚度足够小以透射来自主半导体区域的光。电极由银基合金制成，而不是仅由银制成，其包含添加剂或选择用于保护电极免受氧化和/或硫化的添加剂和增强电极的化学稳定性而不损失接触欧姆度。

5. 发明申请

US20090026476A1 SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND SEMICONDUCTOR LIGHT-EMITTING ELEMENT MANUFACTURING METHOD 失效
标题翻译：半导体发光元件和半导体发光元件制造方法
公开(公告)号：US20090026476A1
公开(公告)日：2009-01-29
申请号：US12169988
申请日：2008-07-09
申请人： Mikio Tazima , Yoshiki Tada , Tetsuji Matsuo
发明人： Mikio Tazima , Yoshiki Tada , Tetsuji Matsuo
IPC分类号： H01L33/00
CPC分类号： H01L33/44 , H01L33/08 , H01L33/10
摘要： An aspect of the present invention inheres in a semiconductor light-emitting element includes a light-emitting functional stacked body including a light-emitting region having a light-emitting function, and including a light extraction surface for extracting light emitted from the light-emitting region, and an upward convex lens disposed on the light extraction surface.
摘要翻译：本发明的半导体发光元件的一个方面包括：发光功能层叠体，其包括具有发光功能的发光区域，并且包括用于提取从发光部件发出的光的光提取面并且设置在光提取表面上的向上凸透镜。

6. 发明授权

US07893450B2 Semiconductor light-emitting element and semiconductor light-emitting element manufacturing method 失效
标题翻译：半导体发光元件和半导体发光元件的制造方法
公开(公告)号：US07893450B2
公开(公告)日：2011-02-22
申请号：US12169988
申请日：2008-07-09
申请人： Mikio Tazima , Yoshiki Tada , Tetsuji Matsuo
发明人： Mikio Tazima , Yoshiki Tada , Tetsuji Matsuo
IPC分类号： H01L33/00
CPC分类号： H01L33/44 , H01L33/08 , H01L33/10
摘要： An aspect of the present invention inheres in a semiconductor light-emitting element includes a light-emitting functional stacked body including a light-emitting region having a light-emitting function, and including a light extraction surface for extracting light emitted from the light-emitting region, and an upward convex lens disposed on the light extraction surface.
摘要翻译：本发明的半导体发光元件的一个方面包括：发光功能层叠体，其包括具有发光功能的发光区域，并且包括用于提取从发光部件发出的光的光提取面并且设置在光提取表面上的向上凸透镜。

7. 发明授权

US07199401B2 Light-emitting semiconductor device 有权
标题翻译：发光半导体器件
公开(公告)号：US07199401B2
公开(公告)日：2007-04-03
申请号：US11058942
申请日：2005-02-16
申请人： Mikio Tazima , Masahiro Sato , Hidekazu Aoyagi , Tetsuji Matsuo
发明人： Mikio Tazima , Masahiro Sato , Hidekazu Aoyagi , Tetsuji Matsuo
IPC分类号： H01L27/15 , H01L29/22
CPC分类号： H01L33/30 , H01L33/14 , H01L33/405 , H01L33/42 , H01L33/46
摘要： An LED includes a semiconductor region having an active layer sandwiched between two confining layers of opposite conductivity types for generating heat. A cathode is arranged centrally on one of the opposite major surfaces of the semiconductor region from which is emitted the light. Attached to the other major surface of the semiconductor region, via an ohmic contact layer, is a reflective metal layer for reflecting the light that has traversed the ohmic contact layer, back toward the semiconductor region. A transparent antidiffusion layer is interposed between the ohmic contact layer and the reflective layer in order to prevent the ohmic contact layer and the reflective layer from thermally diffusing from one into the other to the impairment of the reflectivity of the reflective layer.
摘要翻译： LED包括半导体区域，其具有夹在相反导电类型的两个限制层之间的活性层，用于产生热量。阴极被布置在半导体区域的相对的主表面之一的中心上，从其发射光。通过欧姆接触层附着在半导体区域的另一个主表面上，是反射金属层，用于反射穿过欧姆接触层的光，朝向半导体区域。在欧姆接触层和反射层之间插入透明的反扩散层，以防止欧姆接触层和反射层从一个扩散到另一个到反射层的反射率的损害。

8. 发明申请

US20060065901A1 Migration-proof light-emitting semiconductor device and method of fabrication 审中-公开
标题翻译：防偏移发光半导体器件及其制造方法
公开(公告)号：US20060065901A1
公开(公告)日：2006-03-30
申请号：US11233903
申请日：2005-09-23
申请人： Hidekazu Aoyagi , Takashi Kato , Tetsuji Matsuo
发明人： Hidekazu Aoyagi , Takashi Kato , Tetsuji Matsuo
IPC分类号： H01L33/00 , H01L31/12
CPC分类号： H01L33/44 , H01L24/32 , H01L33/0079 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/73265 , H01L2924/01012 , H01L2924/01029 , H01L2924/0133 , H01L2924/12041 , H01L2924/00 , H01L2924/01031 , H01L2924/01032 , H01L2924/01079 , H01L2924/3512 , H01L2924/00014
摘要： An LED has a light-generating semiconductor region formed on an electroconductive baseplate via a reflector layer of silver or silver-base alloy. The light-generating semiconductor region has an active layer between claddings of opposite conductivity types. An anti-migration sheath envelopes either or both of the reflector layer and light-generating semiconductor region in order to prevent the reflector metal from migrating onto the semiconductor region with the consequent possible short-circuiting of the claddings of the active layer.
摘要翻译： LED具有通过银或银基合金的反射层形成在导电基板上的发光半导体区域。光产生半导体区域具有相反导电类型的包层之间的有源层。为了防止反射体金属迁移到半导体区域上，抗迁移护套包围反射层和发光半导体区域中的一个或两者，从而导致有源层的包层的短路。

9. 发明授权

US07659553B2 Light-emitting semiconductor device protected against reflector metal migration 有权
标题翻译：发光半导体器件防止反射器金属迁移
公开(公告)号：US07659553B2
公开(公告)日：2010-02-09
申请号：US11764543
申请日：2007-06-18
申请人： Takashi Kato , Junji Sato , Tetsuji Matsuo
发明人： Takashi Kato , Junji Sato , Tetsuji Matsuo
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/387 , H01L33/46 , H01L2933/0016
摘要： An LED has a light-generating semiconductor region formed on a baseplate via a metal-made reflector layer. The light-generating semiconductor region has an active layer sandwiched between a pair of claddings of opposite conductivity types. An annular marginal space is left around the reflector layer between the light-generating semiconductor region and the substrate. In order to preclude the thermal migration of the reflector metal onto the side surfaces of the light-generating semiconductor region, with a possible short-circuiting of the pair of claddings across the active layer, an anti-migration seal is received in the annular marginal space created around the reflector layer between the light-generating semiconductor region and the baseplate.
摘要翻译： LED具有通过金属制的反射层在基板上形成的发光半导体区域。光产生半导体区域具有夹在一对相反导电类型的包层之间的有源层。在发光半导体区域和衬底之间的反射器层周围留有环形边缘空间。为了防止反射器金属在发光半导体区域的侧表面上的热迁移，通过跨越有源层的一对包层的可能的短路，反向移动密封件被接收在环形边缘在发光半导体区域和基板之间围绕反射器层产生的空间。

10. 发明申请

US20070290215A1 LIGHT-EMITTING SEMICONDUCTOR DEVICE PROTECTED AGAINST REFLECTOR METAL MIGRATION, AND METHOD OF FABRICATION 有权
标题翻译：针对反射器金属迁移保护的发光半导体器件及其制造方法
公开(公告)号：US20070290215A1
公开(公告)日：2007-12-20
申请号：US11764543
申请日：2007-06-18
申请人： Takashi Kato , Junji Sato , Tetsuji Matsuo
发明人： Takashi Kato , Junji Sato , Tetsuji Matsuo
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/0079 , H01L33/387 , H01L33/46 , H01L2933/0016
摘要： An LED has a light-generating semiconductor region formed on a baseplate via a metal-made reflector layer. The light-generating semiconductor region has an active layer sandwiched between a pair of claddings of opposite conductivity types. An annular marginal space is left around the reflector layer between the light-generating semiconductor region and the substrate. In order to preclude the thermal migration of the reflector metal onto the side surfaces of the light-generating semiconductor region, with a possible short-circuiting of the pair of claddings across the active layer, an anti-migration seal is received in the annular marginal space created around the reflector layer between the light-generating semiconductor region and the baseplate.
摘要翻译： LED具有通过金属制的反射层在基板上形成的发光半导体区域。光产生半导体区域具有夹在一对相反导电类型的包层之间的有源层。在发光半导体区域和衬底之间的反射器层周围留有环形边缘空间。为了防止反射器金属在发光半导体区域的侧表面上的热迁移，通过跨越有源层的一对包层的可能的短路，反向移动密封件被接收在环形边缘在发光半导体区域和基板之间围绕反射器层产生的空间。

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