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1. 发明授权

US5262369A Dielectric ceramic compositions 失效
标题翻译：介电陶瓷组合物
公开(公告)号：US5262369A
公开(公告)日：1993-11-16
申请号：US807879
申请日：1992-01-21
申请人： Toru Mori , Atsushi Ochi , Kazuaki Utsumi , Tetsuo Yoshimoto , Souichiro Sugano , Shinji Abe
发明人： Toru Mori , Atsushi Ochi , Kazuaki Utsumi , Tetsuo Yoshimoto , Souichiro Sugano , Shinji Abe
IPC分类号： C04B35/00 , C04B35/499 , H01B3/12 , H01G4/12 , C04B35/46
CPC分类号： C04B35/499 , H01G4/1254
摘要： The improved dielectric ceramic composition has sufficiently high dielectric constant, high insulation resistance and small dielectric loss to be suitable for use as a material for ceramic capacitors. The composition comprises as a main component a three-component ceramic composition in solid solution having the formula Pb(Mg.sub.1/3 Nb.sub.2/3)O.sub.3 -Pb(Ni.sub.1/3 Nb.sub.2/3)O.sub.3 -PbTiO.sub.3 which, when expressed by xPb(Mg.sub.1/3 Nb.sub.2/3)O.sub.3 -yPb(Ni.sub.1/3 Nb.sub.2/3)O.sub.3 -zPbTiO.sub.3, is defined by the area surrounded by the following points of (x, y, z), i.e., (0.70, 0.20, 0.10), (0.70, 0.15, 0.15), (0.83, 0.02, 0.15), (0.96, 0.02, 0.02) and (0.78, 0.20, 0.02), and this ceramic composition further contains a Mn oxide or a Mn-containing complex oxide as an additive.

2. 发明授权

US5904911A Manganese-containing complex oxide, and process for preparing complex perovskite compound composition by use of this complex oxide 失效
标题翻译：含锰复合氧化物，以及使用该复合氧化物制备复合钙钛矿化合物组合物的方法
公开(公告)号：US5904911A
公开(公告)日：1999-05-18
申请号：US31763
申请日：1998-02-27
申请人： Toru Mori , Atsushi Ochi , Shinji Ito , Hiroshi Ishikawa , Tadahiko Horiguchi
发明人： Toru Mori , Atsushi Ochi , Shinji Ito , Hiroshi Ishikawa , Tadahiko Horiguchi
IPC分类号： C04B35/00 , C01G45/00 , C01G45/02 , C01G53/00 , H01B3/12 , H01G4/12 , C01B13/14 , C01G49/00 , H01M4/50 , C01F13/14
CPC分类号： C01G41/006 , C01G45/006 , C01G45/125 , C01G53/006 , H01G4/1209 , C01P2002/34 , C01P2002/52 , C01P2002/72 , C01P2004/20 , C01P2004/61 , C01P2006/40
摘要： There are herein disclosed a raw material for a complex perovskite ceramic composition which is intended to uniformly disperse a trace amount of an addition component (manganese) therein, and a process for preparing the ceramic composition.A manganese-containing composite oxide is represented by the general formula (Mn.sub.a MeI.sub.1-a)MeII.sub.b O.sub.c wherein a is a value in the range of 0
摘要翻译：本文公开了用于均匀分散微量添加成分（锰）的复合钙钛矿陶瓷组合物的原料及其制备方法。含锰复合氧化物由通式（MnaMeI-a）MeIIbOc表示，其中+ E，uns a + EE是在0 <+ E，uns a +EE≤0.3的范围内的值; MeI是Mg，Ni和Zn中的至少一种; MeII是Nb，Ta和W之一; 当MeII是Nb或Ta，+ E时，uns b + EE是2和+ E，uns c + EE是6，或者当MeII是W，+ E时，uns b + EE是1和+ E，uns c + EE 通过使用含有该含锰复合氧化物的原料，可以制备含Mn的复合钙钛矿化合物组合物，其含有Mn和至少一种由通式Pb（BIBII）表示的复合钙钛矿化合物，其中BI是Mg，Ni和Zn之一; BII是Nb，Ta和W之一。

3. 发明授权

US5219810A Ceramic composition 失效
标题翻译：陶瓷组成
公开(公告)号：US5219810A
公开(公告)日：1993-06-15
申请号：US865276
申请日：1992-04-08
申请人： Mitsuru Furuya , Toru Mori , Atsushi Ochi
发明人： Mitsuru Furuya , Toru Mori , Atsushi Ochi
IPC分类号： C04B35/499 , H01B3/12 , H01G4/12
CPC分类号： H01G4/1254 , C04B35/499 , H01B3/12 , H01G4/1218
摘要： A ceramic composition is herein disclosed, which is a lead-type perovskite compound capable of being subjected to low temperature-sintering among ceramic compositions for use in making capacitors, which has a high dielectric constant, low temperature-dependency thereof and a low decrease in capacitance upon application of a DC bias and which comprises a ternary system comprising lead magnesium niobate (Pb(Mg.sub.1/3 Nb.sub.2/3)O.sub.3), lead nickel niobate (Pb(Ni.sub.1/3 Nb.sub.2/3)O.sub.3) and lead titanate (PbTiO.sub.3).sub.z or a ternary system comprising lead magnesium tungstate (Pb(Mg.sub.1/2 W.sub.1/2)O.sub.3) lead titanate (PbTiO.sub.3) and lead nickel niobate (Pb(Ni.sub.1/3 Nb.sub.2/3)O.sub.3) and a desired amount of lanthanum manganese niobate La(Mn.sub.2/3 Nb.sub.1/3)O.sub.3) incorporated into the ternary system or a predetermined amount of La.sup.3+ or Ca.sup.2+ ions with which the Pb.sup.2+ ions present in the ternary system are substituted.
摘要翻译：本文公开了一种陶瓷组合物，其是能够在用于制造电容器的陶瓷组合物中进行低温烧结的铅型钙钛矿化合物，其具有高介电常数，低温依赖性和低降低包含铌酸铅镁（Pb（Mg1 / 3Nb2 / 3）O3），铌酸铅镍（Pb（Ni1 / 3Nb2 / 3）O3）和钛酸铅（PbTiO3）z的三元体系，或包含钨酸铅镁（Pb（Mg1 / 2W1 / 2）O3）钛酸铅（PbTiO3）和铌酸铅镍（Pb（Ni1 / 3Nb2 / 3）O3）和所需量的铌酸镧镧（Mn2 / 3Nb1 / 3）O3）或三元体系中存在的Pb 2+离子的预定量的La 3+或Ca 2+离子被取代。

4. 发明授权

US5275988A Ceramic composition 失效
标题翻译：陶瓷组成
公开(公告)号：US5275988A
公开(公告)日：1994-01-04
申请号：US865445
申请日：1992-04-09
申请人： Toru Mori , Mitsuru Furuya , Atsushi Ochi
发明人： Toru Mori , Mitsuru Furuya , Atsushi Ochi
IPC分类号： C04B35/499 , C04B35/46
CPC分类号： C04B35/499
摘要： A ceramic composition is herein disclosed, which is a lead-type perovskite compound capable of being subjected to low temperature-sintering among ceramic compositions for use in making capacitors, which has a high dielectric constant at room temperature of not less than 10000, a low temperature-dependency of the dielectric constant and a low decrease in capacitance upon application of a DC bias and which comprises, as a main constituent, a ternary system comprising lead magnesium niobate: [Pb(Mg.sub.1/3 Nb.sub.2/3)O.sub.3 ], lead nickel niobate: [Pb(Ni.sub.1/3 Nb.sub.2/3)O.sub.3 ] and lead titanate: [PbTiO.sub.3 ] in which part of the Pb.sup.2+ ions present in the ternary system are substituted with a desired amount of Sr.sup.2+ ions, Ba.sup.2+ ions or Ca.sup.2+ ions.
摘要翻译：本文公开了一种陶瓷组合物，其是能够在用于制造电容器的陶瓷组合物中进行低温烧结的铅型钙钛矿化合物，其在室温下的介电常数不低于10000，低介电常数的温度依赖性以及在施加直流偏压时电容的降低较小，并且其包含作为主要成分的包含铌酸铅镁（Pb（Mg1 / 3Nb2 / 3）O3），铅镍铌酸盐：（Pb（Ni1 / 3Nb2 / 3）O3）和钛酸铅：（PbTiO3），其中存在于三元体系中的部分Pb 2+离子被所需量的Sr 2+离子，Ba 2+离子或Ca 2+离子所取代。

5. 发明授权

US06365828B1 Electromagnetic interference suppressing device and circuit 有权
标题翻译：电磁干扰抑制装置及电路
公开(公告)号：US06365828B1
公开(公告)日：2002-04-02
申请号：US09691257
申请日：2000-10-19
申请人： Yasushi Kinoshita , Hiroshi Wabuka , Shiro Yoshida , Hirokazu Tohya , Toru Mori , Atsushi Ochi
发明人： Yasushi Kinoshita , Hiroshi Wabuka , Shiro Yoshida , Hirokazu Tohya , Toru Mori , Atsushi Ochi
IPC分类号： H05K900
CPC分类号： H05K1/165 , H01L23/552 , H01L23/585 , H01L23/66 , H01L2924/0002 , H01L2924/3011 , H05K1/0231 , H05K1/162 , H05K7/1092 , H05K9/0066 , H05K2201/1006 , H05K2201/10689 , H01L2924/00
摘要： The electromagnetic interference suppressing device of the present invention includes a plurality of connection layers and ground layers formed of a conductive material. The connection layers and the ground layers are alternately layered. Insulating layers, formed of an insulating material, intervene between the neighboring connection layers and ground layers. The odd connection layers counting from the bottom and the connection layers just above those layers are electrically connected at the same end. The even connection layers counting from the bottom and the connection layers just above those layers are electrically connected at the same end opposite to the odd connection-layered end. The bottommost connection layer is connected to a first signal terminal. The uppermost connection layer is connected to a second signal terminal. The ground layer is connected to a ground terminal.
摘要翻译：本发明的电磁干扰抑制装置包括多个连接层和由导电材料形成的接地层。连接层和接地层交替层叠。由绝缘材料形成的绝缘层介于相邻连接层和接地层之间。从底部计数的奇数连接层和正好在这些层上方的连接层在同一端电连接。从底部开始计数的连接层和刚好在这些层上方的连接层在与奇数连接分层端相反的相同端部电连接。最下面的连接层连接到第一信号端子。最上面的连接层连接到第二信号端子。接地层连接到接地端子。

6. 发明授权

US07075644B2 Depolarizer and spectroscope and polychromater 有权
标题翻译：去极化器和分光镜和多色染料
公开(公告)号：US07075644B2
公开(公告)日：2006-07-11
申请号：US10629359
申请日：2003-07-29
申请人： Toshikazu Yamamoto , Tsutomu Kaneko , Toru Mori
发明人： Toshikazu Yamamoto , Tsutomu Kaneko , Toru Mori
IPC分类号： G01F3/28
CPC分类号： G02B27/28 , G01J3/02 , G01J3/0224 , G01J2003/1286 , G02B5/3083 , G02B27/283
摘要： A depolarizer includes a second birefringent plate having a thickness which continuously changes in a direction of an optical axis of the second birefringent plate; and a third birefringent plate having a thickness which continuously changes in a direction of 45 degree with respect to an optical axis of the third birefringent plate; wherein the second birefringent plate is stuck on the third birefringent plate so that a reduction direction of the thickness of the second birefringent plate and a reduction direction of the thickness of the third birefringent plate are opposite to each other.
摘要翻译：消偏振器包括具有在第二双折射板的光轴方向上连续变化的厚度的第二双折射板; 以及第三双折射板，其厚度相对于所述第三双折射板的光轴在45度的方向上连续变化; 其中所述第二双折射板粘附在所述第三双折射板上，使得所述第二双折射板的厚度的减小方向和所述第三双折射板的厚度的减小方向彼此相反。

7. 发明授权

US06524905B2 Semiconductor device, and thin film capacitor 有权
标题翻译：半导体器件和薄膜电容器
公开(公告)号：US06524905B2
公开(公告)日：2003-02-25
申请号：US09903316
申请日：2001-07-11
申请人： Shintaro Yamamichi , Toru Mori , Akinobu Shibuya , Takao Yamazaki , Yuzo Shimada
发明人： Shintaro Yamamichi , Toru Mori , Akinobu Shibuya , Takao Yamazaki , Yuzo Shimada
IPC分类号： H01L218242
CPC分类号： H01L28/40 , H01L23/5223 , H01L24/05 , H01L27/0688 , H01L2221/68363 , H01L2224/04042 , H01L2224/4847 , H01L2924/14 , H01L2924/30107 , H01L2924/00
摘要： A semiconductor device provided with a thin film capacitor having a small equivalent series inductance is provided, which can be operated at a high frequency range and contributes to size reduction of the electronic devices. The semiconductor device comprises a device formed on a silicon substrate 1a, interlayer insulating films 3a, 3b, and 3c, wiring blocks including a power source wire block and a ground wire block, and a thin film capacitor 14 formed on an uppermost insulating layer. The thin film capacitor 14 comprises a lower electrode 6 connected to the ground wire block 4e through a contact 5d, an upper electrode 8 which is connected to the power source wire block 4d through a contact 5d, and which extends above the lower electrode 6, and a dielectric layer 7 which is inserted between the lower and the upper electrodes.
摘要翻译：提供了具有小等效串联电感的薄膜电容器的半导体器件，其可以在高频范围下操作并且有助于电子器件的尺寸减小。半导体器件包括形成在硅衬底1a，层间绝缘膜3a，3b和3c上的器件，包括电源线块和接地线块的布线块，以及形成在最上层绝缘层上的薄膜电容器14。薄膜电容器14包括通过接触件5d连接到接地线块4e的下电极6，通过接触件5d连接到电源线块4d并且在下电极6上方延伸的上电极8，以及插入在下电极和上电极之间的电介质层7。

8. 发明授权

US06239945B1 Recording or playback device for disk contained in cartridge and the device including a kickout mechanism and a change-over lever 失效
标题翻译：包含在盒中的盘的记录或播放装置，该装置包括一个脱出机构和一个转换杆
公开(公告)号：US06239945B1
公开(公告)日：2001-05-29
申请号：US09413241
申请日：1999-10-07
申请人： Tadashi Inoue , Ko ichi Nakao , Toru Mori
发明人： Tadashi Inoue , Ko ichi Nakao , Toru Mori
IPC分类号： G11B15675
CPC分类号： G11B17/046
摘要： A disk recording or playback device comprises a holder pivoted to a chassis and reciprocatingly movable between an open position in which the holder is raised for inserting thereinto a cartridge containing a disk and a closed position in which the holder is laid on the chassis, a kickout mechanism having an engaging piece engageable with the holder and biased by a spring to urge the cartridge in a direction of discharge from the holder, the kickout mechanism extending into the holder and pushable by the insertion of the cartridge against the spring when the holder is in the open position to bring the engaging piece into engagement with the holder, and a change-over lever pivotally movably provided on the chassis for releasing the kickout mechanism from engagement with the holder during the transition of the holder from the closed position to the open position. The pivot portion of the holder and a pivot portion of the change-over lever are provided on the same surface of one member mounted on the chassis.
摘要翻译：磁盘记录或播放装置包括一个转动到底盘的保持架，并且可在打开位置之间往复运动，在打开位置中，保持器被抬起，其中插入一个容纳盘的盒和一个关闭位置，在该位置上保持器放置在底盘上，机构，其具有与保持器接合并且被弹簧偏压以沿着从保持器排出的方向推动盒的接合件，所述止动机构延伸到保持器中并且当保持器处于保持器时通过将盒插入弹簧推动将接合件与保持器接合的打开位置以及可枢转地可移动地设置在底架上的转换杆，用于在保持器从关闭位置转换到打开位置期间释放脱扣机构以与保持器接合。保持架的枢转部分和转换杆的枢转部分设置在安装在底盘上的一个构件的相同表面上。

9. 发明授权

US5861350A Dielectric ceramic composition 失效
标题翻译：介电陶瓷组合物
公开(公告)号：US5861350A
公开(公告)日：1999-01-19
申请号：US873587
申请日：1997-06-12
申请人： Toru Mori , Tadahiko Horiguchi , Shinji Ito
发明人： Toru Mori , Tadahiko Horiguchi , Shinji Ito
IPC分类号： C04B35/49 , C04B35/493 , C04B35/499 , H01B3/12 , C04B35/472
CPC分类号： C04B35/499 , C04B35/493
摘要： A dielectric ceramic composition is herein disclosed which comprises four lead-containing perovskite compounds of (a) lead magnesium tungstate �Pb(Mg.sub.1/2 W.sub.1/2)O.sub.3 !, (b) lead nickel niobate �Pb(Ni.sub.1/3 Nb.sub.2/3)O.sub.3 !, (c) lead titanate (PbTiO.sub.3) and (d) lead zirconate (PbZrO.sub.3) as main components and which further contains an oxide of a rare earth element; and by adjusting a molar ratio of the components (a) to (d) and an amount of the oxide of the rare earth element in specific ranges, there can be obtained the dielectric ceramic composition suitable for a dielectric substance for a multilayer ceramic capacitor which has a low firing temperature, a high dielectric constant at room temperature and a low change rate of the dielectric constant to temperature.
摘要翻译：本文公开了一种介电陶瓷组合物，其包含四种含铅的钙钛矿化合物（a）钨酸铅镁[Pb（Mg1 / 2W1 / 2）O3]，（b）铅铌酸铅[Pb（Ni1 / 3Nb2 / 3）O3 ]，（c）钛酸铅（PbTiO 3）和（d）锆酸铅（PbZrO 3）作为主要成分，并且还含有稀土元素的氧化物; 通过调整成分（a）〜（d）的摩尔比和特定范围的稀土类元素的氧化物的量，可以得到适用于多层陶瓷电容器的电介质的电介质陶瓷组合物，具有低的焙烧温度，室温下的高介电常数和介电常数与温度的低变化率。

10. 发明授权

US5801383A VOX film, wherein X is greater than 1.875 and less than 2.0, and a bolometer-type infrared sensor comprising the VOX film 失效
标题翻译： VOX膜，其中X大于1.875且小于2.0，以及包括VOX膜的测辐射热计型红外传感器
公开(公告)号：US5801383A
公开(公告)日：1998-09-01
申请号：US754140
申请日：1996-11-22
申请人： Hideo Wada , Mitsuhiro Nagashima , Naoki Oda , Tokuhito Sasaki , Toru Mori
发明人： Hideo Wada , Mitsuhiro Nagashima , Naoki Oda , Tokuhito Sasaki , Toru Mori
IPC分类号： G01J5/20 , H01L25/00 , G01J5/00
CPC分类号： G01J5/20
摘要： At a heat treatment temperature in a reducing atmosphere of Ar and H.sub.2, a precursory film of V.sub.2 O.sub.5 is reduced into a VO.sub.x film with the heat treatment temperature selected in a predetermined temperature range between 350 .degree. C. and 450.degree. C., both exclusive, to control a resistivity of the VO.sub.x film, where x is greater than 1.875 and less than 2.0. The VO.sub.x film is not susceptible to a metal-semiconductor phase transition inevitable in VO.sub.2 at about 70.degree. C. and is excellent for use in a bolometer-type infrared sensor. When reduced at 350.degree. C. and 450.degree. C. the resistivity and its temperature coefficient of the VO.sub.x film at room temperature are 0.5 and 0.002 .OMEGA. cm and -2.2% and 0.2% per degree Celsius.
摘要翻译：在Ar和H2的还原气氛中的热处理温度下，将V 2 O 5的前体膜还原成VOx膜，其中热处理温度选择在350℃至450℃的预定温度范围内，以控制VOx膜的电阻率，其中x大于1.875且小于2.0。 VOx膜不易受到在约70℃的VO2中不可避免的金属 - 半导体相变的影响，并且适用于测辐射热计型红外传感器。当在350℃和450℃下还原时，VOx膜在室温下的电阻率及其温度系数分别为0.5和0.002欧米加厘米，-2.2％和0.2％摄氏度。

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