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    • 1. 发明申请
    • PLASMA MEASURING METHOD, PLASMA MEASURING DEVICE AND STORAGE MEDIUM
    • 等离子体测量方法,等离子体测量装置和储存介质
    • US20100321029A1
    • 2010-12-23
    • US12867120
    • 2009-01-30
    • Toru ItoMasato KawakamiSumie NagasekiKazuki Denpoh
    • Toru ItoMasato KawakamiSumie NagasekiKazuki Denpoh
    • G01N27/62
    • H01J37/3244H01J37/32449H01J37/32935
    • Provided is a technique capable of ascertaining the process condition of the boundary between electrically positive and negative plasma regions. In a vacuum chamber, one of the parameters of process conditions is stepwisely changed to generate a plasma under at least three process conditions. The parameters include a flow rate ratio between an electrically negative gas and an electrically positive gas, a pressure in the vacuum chamber and the magnitude of an energy supplied to the gases. Next, a voltage is applied to a Langmuir probe positioned in that plasma, and a current-voltage curve indicating the relationship between the applied voltage and the electric current to flow through the probe is acquired for each of the process conditions. On the basis of the current-voltage curve group acquired, the process conditions are determined for the boundary between the electrically positive and negative plasma regions.
    • 提供了一种能够确定电正极和负电等离子体区域之间的边界的工艺条件的技术。 在真空室中,逐步改变工艺条件的参数之一,以在至少三个工艺条件下产生等离子体。 参数包括电负气体和电正气体之间的流量比,真空室中的压力和供应给气体的能量的大小。 接下来,对位于该等离子体中的Langmuir探针施加电压,并且针对每个处理条件获取指示施加的电压和流过探针的电流之间的关系的电流 - 电压曲线。 基于所获得的电流 - 电压曲线组,确定电气正电压和负电压区域之间的边界的工艺条件。
    • 3. 发明申请
    • PLASMA ETCHING METHOD AND PLASMA ETCHING APPARATUS
    • 等离子体蚀刻方法和等离子体蚀刻装置
    • US20110201208A1
    • 2011-08-18
    • US13125141
    • 2009-10-19
    • Masato KawakamiSumie Nagaseki
    • Masato KawakamiSumie Nagaseki
    • H01L21/3065
    • H01L21/31116
    • According to one embodiment, a process gas containing a fluorocarbon-based gas being an etch gas having a deposition property and SF6 gas as an additional gas are introduced into a process chamber, a plasma is generated in the process chamber, and an etching is performed on a silicon-containing oxide film formed on a substrate by using a resist pattern as a mask through the plasma. At this time, based on a relationship between an etch rate and a resist selectivity that is changed with respect to a change in a flow rate of the additional gas, the flow rate of the additional gas is set to a range of the flow rate in which changes in the etch rate and the resist selectivity accompanying an increase in the flow rate of the additional gas tend to increase.
    • 根据一个实施方案,将含有作为附着气体的具有沉积性质的蚀刻气体的碳氟化合物气体和作为附加气体的SF 6气体的工艺气体引入到处理室中,在处理室中产生等离子体,并进行蚀刻 在通过等离子体使用抗蚀剂图案作为掩模的基板上形成的含硅氧化膜上。 此时,基于相对于附加气体的流量变化而变化的蚀刻速度和抗蚀剂选择性之间的关系,将附加气体的流量设定为 随着附加气体的流速的增加,蚀刻速率和抗蚀剂选择性的变化趋于增加。
    • 4. 发明申请
    • SUBSTRATE COOLING DEVICE, SUBSTRATE COOLING METHOD AND HEAT TREATMENT APPARATUS
    • 基板冷却装置,基板冷却方法和热处理装置
    • US20130062035A1
    • 2013-03-14
    • US13597513
    • 2012-08-29
    • Masato KawakamiHiromi NitadoriYun Mo
    • Masato KawakamiHiromi NitadoriYun Mo
    • F27D9/00F24F7/00
    • H01L21/67757H01L21/67109
    • A substrate cooling device includes a cylindrical heat shielding member 30 configured to be movable between an insertion position where the heat shielding member 30 is inserted between the substrate holding member 15 in a processing vessel 11 and a heating member 12 and an unloading position where the heat shielding member 30 is unloaded from the insertion position, and configured to block radiant heat toward the substrates W after completing a heat treatment; and an air cooling port 21 provided at an outside of the processing vessel 11. The heat shielding member 30 includes two half-cylindrical members 31 that are assembled and separated at the unloading position, and is movable between the unloading position and the insertion position. An outer surface and an inner surface of the heat shielding member 30 are made of materials having a relatively low emissivity and a relatively high emissivity, respectively.
    • 基板冷却装置包括圆筒形的热屏蔽构件30,该圆筒形的热屏蔽构件30能够在热屏蔽构件30插入处理容器11中的基板保持构件15和加热构件12之间的插入位置与加热构件12的卸载位置之间移动 遮蔽构件30从插入位置卸载,并且构造成在完成热处理之后阻挡朝向基板W的辐射热; 以及设置在处理容器11的外侧的空气冷却端口21.隔热构件30包括在卸载位置组装和分离的两个半圆柱形构件31,并且可在卸载位置和插入位置之间移动。 隔热构件30的外表面和内表面分别由具有相对低的发射率和相对高的发射率的材料制成。
    • 6. 发明授权
    • Ink jet printing apparatus and ink jet printing method
    • 喷墨打印设备和喷墨打印方法
    • US08740336B2
    • 2014-06-03
    • US13183604
    • 2011-07-15
    • Yasunori FujimotoMasato KawakamiTakeshi Honma
    • Yasunori FujimotoMasato KawakamiTakeshi Honma
    • B41J2/205B41J29/38B41J2/21
    • B41J2/2107B41J2/2052B41J2/2056B41J2/2132
    • An ink jet printing apparatus and an ink jet printing method, whereby high-permeation ink and low-permeation ink are employed to prevent a reduction in optical density is provided. The ink jet printing apparatus controls ejection of ink from print heads, so that only low-permeation ink is ejected onto the edge area of a print medium that is adjacent to a non-printing area, and this time, high-permeation ink is not employed. Further, the ink jet printing apparatus controls ejection of ink from the print heads, so that both low-permeation ink and high-permeation ink are employed for the non-edge area that is adjacent to the edge area, and to perform printing, the low-permeation ink is ejected onto the non-edge area prior to the high-permeation ink.
    • 提供了一种喷墨打印设备和喷墨印刷方法,其中采用了高渗透油墨和低渗透油墨以防止光密度的降低。 喷墨打印设备控制从打印头的墨水喷射,使得只有低渗透油墨喷射到与非打印区域相邻的打印介质的边缘区域上,并且此时高渗透油墨不是 雇用。 此外,喷墨打印装置控制来自打印头的墨的喷射,使得低渗透油墨和高渗透油墨都用于与边缘区域相邻的非边缘区域,并且进行打印, 低渗透油墨在高渗透油墨之前喷射到非边缘区域上。
    • 7. 发明授权
    • Method for forming a vapor phase growth film
    • 形成气相生长膜的方法
    • US07651733B2
    • 2010-01-26
    • US11407354
    • 2006-04-20
    • Kazuhide HasebeHiroyuki YamamotoTakahito UmeharaMasato Kawakami
    • Kazuhide HasebeHiroyuki YamamotoTakahito UmeharaMasato Kawakami
    • C23C16/00
    • C23C16/455C23C16/45578C23C16/4583C30B35/00
    • A vapor-phase growing unit of this invention includes: a reaction container in which a substrate is arranged, a first gas-introducing part having a first gas-introducing tube in which a gas-spouting port opening in the reaction container is formed, the first gas-introducing part serving to supply into the reaction container a first gas consisting of an organic-metal including gas, and a second gas-introducing part having a second gas-introducing tube in which a gas-spouting port opening in the reaction container is formed, the second gas-introducing part serving to supply into the reaction container a second gas which reacts with the organic-metal including gas and whose density is smaller than that of the organic-metal including gas. The gas-spouting port of the first gas-introducing tube and the gas-spouting port of the second gas-introducing tube are arranged along an outside periphery of the substrate arranged in the reaction container.
    • 本发明的气相生长单元包括:配置有基板的反应容器,具有第一气体导入管的第一气体导入部,在该第一气体导入管中形成有在反应容器内开口的气体喷出口, 用于向反应容器供给包含气体的有机金属构成的第一气体的第一气体导入部和具有第二气体导入管的第二气体导入部,在第二气体导入部中,在反应容器内开口的气体吐出口 形成第二气体导入部,其用于向反应容器供给与包含有机金属的气体反应的第二气体,其密度小于包含有机金属的气体的密度。 第一气体导入管的气体喷出口和第二气体导入管的气体喷出口沿配置在反应容器内的基板的外周配置。
    • 9. 发明申请
    • INK JET PRINTING APPARATUS AND INK JET PRINTING METHOD
    • 喷墨打印设备和喷墨打印方法
    • US20120019583A1
    • 2012-01-26
    • US13183604
    • 2011-07-15
    • Yasunori FujimotoMasato KawakamiTakeshi Honma
    • Yasunori FujimotoMasato KawakamiTakeshi Honma
    • B41J2/205
    • B41J2/2107B41J2/2052B41J2/2056B41J2/2132
    • An ink jet printing apparatus and an ink jet printing method, whereby high-permeation ink and low-permeation ink are employed to prevent a reduction in optical density is provided. The ink jet printing apparatus controls ejection of ink from print heads, so that only low-permeation ink is ejected onto the edge area of a print medium that is adjacent to a non-printing area, and this time, high-permeation ink is not employed. Further, the ink jet printing apparatus controls ejection of ink from the print heads, so that both low-permeation ink and high-permeation ink are employed for the non-edge area that is adjacent to the edge area, and to perform printing, the low-permeation ink is ejected onto the non-edge area prior to the high-permeation ink.
    • 提供了一种喷墨打印设备和喷墨印刷方法,其中采用了高渗透油墨和低渗透油墨以防止光密度的降低。 喷墨打印设备控制从打印头的墨水喷射,使得只有低渗透油墨喷射到与非打印区域相邻的打印介质的边缘区域上,并且此时高渗透油墨不是 雇用。 此外,喷墨打印装置控制来自打印头的墨的喷射,使得低渗透油墨和高渗透油墨都用于与边缘区域相邻的非边缘区域,并且进行打印, 低渗透油墨在高渗透油墨之前喷射到非边缘区域上。
    • 10. 发明申请
    • IMAGE-FORMING APPARATUS AND IMAGE-FORMING METHOD
    • 图像形成装置和图像形成方法
    • US20080001983A1
    • 2008-01-03
    • US11768904
    • 2007-06-26
    • Masato KawakamiHiromi Mochizuki
    • Masato KawakamiHiromi Mochizuki
    • B41J29/38B41J2/015
    • B41J2/2114B41J11/0015B41J11/007B41J29/38
    • An image-forming apparatus is provided for formation of a high-quality image without irregularity in the image density independently of the infiltration time of the pretreatment liquid or the delivery speed of the plain paper sheet for the printing. The interval between a pretreatment liquid applicator 30 and printing heads 21-24 is adjusted by a stepping motor 98 driven by a stepping motor control circuit 34 based on the delivery speed data read by a memory controller 68. Thereby an endless belt 90 is allowed to circulate in the direction of the arrow-C or arrow-D. This circulation movement of the endless belt displaces the applicator holder 82 or the pretreatment liquid applicator 30 at an intended distance in the arrow-A direction or the reverse direction along the guide rail 86,88.
    • 提供了一种图像形成装置,用于形成高质量图像,而不管预处理液体的渗透时间或印刷用普通纸的输送速度,图像浓度都不会发生不均匀。 基于由存储器控制器68读取的传送速度数据,通过由步进电动机控制电路34驱动的步进电机98调节预处理液体涂布器30与打印头21-24之间的间隔。 由此,循环带90能够沿箭头C或箭头D的方向循环。 环形带的这种循环运动使涂抹器保持器82或预处理液体施加器30沿着导轨86,88在箭头A方向或相反方向上移动预期距离。