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    • 10. 发明授权
    • Method for manufacturing semiconductor device
    • 制造半导体器件的方法
    • US08900962B2
    • 2014-12-02
    • US13052309
    • 2011-03-21
    • Daisuke YamashitaEtsuo HamadaHideki NozakiHironobu Shibata
    • Daisuke YamashitaEtsuo HamadaHideki NozakiHironobu Shibata
    • H01L21/331H01L29/66H01L21/268H01L29/739H01L29/08H01L21/266H01L21/265
    • H01L29/66333H01L21/26513H01L21/266H01L21/268H01L29/0834H01L29/7395
    • According to one embodiment, a method is disclosed for manufacturing a semiconductor device. The method can include forming a base region and an emitter region in a front surface of a semiconductor layer. The method can include forming a first impurity implantation region by implanting first impurity of a first conductivity type into a back surface of the semiconductor layer. The method can include selectively forming a second impurity implantation region by selectively implanting second impurity of a second conductivity type into the first impurity implantation region. In addition, the method can include irradiating the first impurity implantation region and the second impurity implantation region with laser light. A peak of impurity concentration profile in a depth direction of at least one of the first impurity implantation region and the second impurity implantation region before irradiation with the laser light is adjusted to a depth of 0.05 μm or more and 0.3 μm or less from the back surface of the semiconductor layer.
    • 根据一个实施例,公开了一种用于制造半导体器件的方法。 该方法可以包括在半导体层的前表面中形成基极区域和发射极区域。 该方法可以包括通过将第一导电类型的第一杂质注入半导体层的后表面来形成第一杂质注入区。 该方法可以包括通过将第二导电类型的第二杂质选择性地注入到第一杂质注入区域中来选择性地形成第二杂质注入区域。 此外,该方法可以包括用激光照射第一杂质注入区域和第二杂质注入区域。 将激光照射前的第一杂质注入区域和第二杂质注入区域中的至少一个的深度方向的杂质浓度分布的峰值从背面调整为0.05μm以上且0.3μm以下的深度 半导体层的表面。