会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明申请
    • SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS
    • 基板加工方法和基板加工装置
    • US20110065288A1
    • 2011-03-17
    • US12857942
    • 2010-08-17
    • Toru HARADAMasayoshi MINAMI
    • Toru HARADAMasayoshi MINAMI
    • H01L21/318F27D11/00
    • F27B17/0025H01L21/02164H01L21/02222H01L21/02323H01L21/02337H01L21/31058H01L21/3125H01L21/316H01L21/67109
    • Provided is a substrate processing method comprising: loading a substrate, on which polysilazane is applied, into a substrate process chamber; maintaining an inside of the substrate process chamber, into which the substrate is loaded, in water vapor atmosphere and depressurization atmosphere at a temperature of 400° C.; performing a first heat treatment process on the substrate in a state where the inside of the substrate process chamber is maintained in the water vapor atmosphere and the depressurization atmosphere at the temperature of 400° C.; next, increasing an inner temperature of the substrate process chamber from the temperature of 400° C. in the first heat treatment process to a temperature ranging from 900° C. to 1000° C.; and performing a second heat treatment process on the substrate in a state where the inside of the substrate process chamber is maintained in water vapor atmosphere and depressurization atmosphere at the temperature ranging from 900° C. to 1000° C.
    • 提供了一种基板处理方法,其包括:将其上施加有聚硅氮烷的基板加载到基板处理室中; 在400℃的温度下在水蒸汽气氛和减压气氛中保持衬底处理室的内部,衬底处理室内装载衬底处理室。 在基板处理室的内部保持在水蒸气气氛和400℃的减压气氛的状态下对基板进行第一热处理工序; 接下来,在第一热处理过程中将衬底处理室的内部温度从400℃升高到900℃至1000℃的温度; 在基板处理室的内部保持在水蒸汽气氛和在900℃〜1000℃的温度下的减压气氛的状态下对基板进行第二热处理工序。