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1. 发明申请

US20110065288A1 SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS 有权
标题翻译：基板加工方法和基板加工装置
公开(公告)号：US20110065288A1
公开(公告)日：2011-03-17
申请号：US12857942
申请日：2010-08-17
申请人： Toru HARADA , Masayoshi MINAMI
发明人： Toru HARADA , Masayoshi MINAMI
IPC分类号： H01L21/318 , F27D11/00
CPC分类号： F27B17/0025 , H01L21/02164 , H01L21/02222 , H01L21/02323 , H01L21/02337 , H01L21/31058 , H01L21/3125 , H01L21/316 , H01L21/67109
摘要： Provided is a substrate processing method comprising: loading a substrate, on which polysilazane is applied, into a substrate process chamber; maintaining an inside of the substrate process chamber, into which the substrate is loaded, in water vapor atmosphere and depressurization atmosphere at a temperature of 400° C.; performing a first heat treatment process on the substrate in a state where the inside of the substrate process chamber is maintained in the water vapor atmosphere and the depressurization atmosphere at the temperature of 400° C.; next, increasing an inner temperature of the substrate process chamber from the temperature of 400° C. in the first heat treatment process to a temperature ranging from 900° C. to 1000° C.; and performing a second heat treatment process on the substrate in a state where the inside of the substrate process chamber is maintained in water vapor atmosphere and depressurization atmosphere at the temperature ranging from 900° C. to 1000° C.
摘要翻译：提供了一种基板处理方法，其包括：将其上施加有聚硅氮烷的基板加载到基板处理室中; 在400℃的温度下在水蒸汽气氛和减压气氛中保持衬底处理室的内部，衬底处理室内装载衬底处理室。在基板处理室的内部保持在水蒸气气氛和400℃的减压气氛的状态下对基板进行第一热处理工序; 接下来，在第一热处理过程中将衬底处理室的内部温度从400℃升高到900℃至1000℃的温度; 在基板处理室的内部保持在水蒸汽气氛和在900℃〜1000℃的温度下的减压气氛的状态下对基板进行第二热处理工序。

2. 发明申请

US20110065286A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS 审中-公开
标题翻译：制造半导体器件和衬底加工设备的方法
公开(公告)号：US20110065286A1
公开(公告)日：2011-03-17
申请号：US12841440
申请日：2010-07-22
申请人： Takafumi SASAKI , Masanao FUKUDA , Masayoshi MINAMI , Yasuhiro MEGAWA
发明人： Takafumi SASAKI , Masanao FUKUDA , Masayoshi MINAMI , Yasuhiro MEGAWA
IPC分类号： H01L21/71 , B05C11/00 , B05C21/00
CPC分类号： H01L21/02233 , H01L21/02238 , H01L21/02255 , H01L21/67109 , H01L29/40114 , H01L29/7881
摘要： At a low temperature of 500° C. to 700° C., the concentration of atomic oxygen is controlled in a wafer stacked direction, and the thickness distribution of oxide films is kept uniform in the wafer stacked direction. A semiconductor device manufacturing method includes a process of oxidizing substrates by supplying oxygen-containing gas and hydrogen-containing gas through a mixing part from an end side of a substrate arrangement region where the substrates are arranged inside the process chamber so that the gases flow toward the other end side of the substrate arrangement region, and supplying hydrogen-containing gas from mid-flow locations corresponding to the substrate arrangement region. The oxygen-containing gas and the hydrogen-containing gas reacts with each other in the mixing part to produce an oxidation species containing atomic oxygen, and the oxidation species has a maximum concentration at an ejection hole through which the oxidation species is ejected from the mixing part into the process chamber.
摘要翻译：在500℃〜700℃的低温下，原子氧的浓度在晶片堆叠方向上被控制，氧化膜的厚度分布在晶片堆叠方向上保持均匀。半导体器件制造方法包括通过从基板布置区域的端面侧的混合部分供给含氧气体和含氢气体来进行氧化基板的处理，其中基板布置区域布置在处理室内，使得气体朝向在衬底布置区域的另一端侧，并且从对应于衬底布置区域的中流动位置供给含氢气体。含氧气体和含氢气体在混合部分中彼此反应以产生含有原子氧的氧化物质，氧化物质在喷射孔中具有最大浓度，氧化物质通过其从混合物中喷出部分进入处理室。

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