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1. 发明授权

US06297082B1 Method of fabricating a MOS transistor with local channel ion implantation regions 失效
标题翻译：用本地沟道离子注入区制造MOS晶体管的方法
公开(公告)号：US06297082B1
公开(公告)日：2001-10-02
申请号：US09383033
申请日：1999-08-25
申请人： Tony Lin , Alice Chao , Jih-Wen Chou
发明人： Tony Lin , Alice Chao , Jih-Wen Chou
IPC分类号： H01L218238
CPC分类号： H01L29/66537 , H01L21/823807 , H01L29/7833
摘要： A fabrication method for a metal oxide semiconductor (MOS) transistor involves forming gate oxide layers of different thicknesses on a core region and a input/output (I/O) region. After forming wells in the substrate, two implantation regions for providing a threshold voltage (VT) adjustment and an anti-punch through layer are formed respectively in a P-well and a N-well of the core region as well as a P-well and a N-well of the I/O region. The method involves forming a pattern mask on the gate oxide layer, wherein the pattern mask has an opening, which may be a channel that corresponds to the P-well of the core region. With the pattern mask serving as an ion implantation mask, two implantation regions for providing the VT adjustment and the anti-punch through layer are formed in the P-well of the core region. After the pattern mask is removed, the steps described above are repeated in order to form implantation regions in other regions, but the sequence of the steps can be swapped around at will. The subsequent process for the MOS transistor is then performed.
摘要翻译：金属氧化物半导体（MOS）晶体管的制造方法涉及在核心区域和输入/输出（I / O）区域上形成不同厚度的栅极氧化物层。在衬底中形成阱之后，分别在芯区的P阱和N阱以及P阱中形成用于提供阈值电压（VT）调整和抗穿通层的两个注入区域和I / O区域的N阱。该方法包括在栅极氧化物层上形成图案掩模，其中图案掩模具有开口，该开口可以是对应于核心区域的P阱的沟道。利用图案掩模作为离子注入掩模，在核心区域的P阱中形成用于提供VT调整和抗穿透层的两个注入区域。在去除图案掩模之后，重复上述步骤以在其它区域中形成植入区域，但是步骤的顺序可以随意地交换。然后执行MOS晶体管的后续处理。

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