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1. 发明授权

US07382030B1 Integrated metal shield for a field effect transistor 有权
标题翻译：用于场效应晶体管的集成金属屏蔽
公开(公告)号：US07382030B1
公开(公告)日：2008-06-03
申请号：US11459829
申请日：2006-07-25
申请人： Tony Ivanov , Michael Carroll , Triet Dinh , Julio Costa
发明人： Tony Ivanov , Michael Carroll , Triet Dinh , Julio Costa
IPC分类号： H01L29/78
CPC分类号： H01L29/7835 , H01L29/1045 , H01L29/402 , H01L29/41775 , H01L29/66659
摘要： The present invention relates to a semiconductor device having an integrated metal shield. The shield, created as part of a MOSFET, is formed about a gate electrode of the MOSFET to effectively reduce drain-to-gate capacitance and increase breakdown voltage. The shield consists of a metallic shield contact via and a source contact extension. The metallic shield contact via, formed between the gate electrode and a drain region of the MOSFET, may be either a series of closely spaced vias or a wide continuous via. The metallic shield contact via is isolated from the surface of a semiconductor wafer by a shield isolation layer at one end. The metallic shield contact via is electrically coupled to the source contact extension at the other end. The source contact extension is metallic, and may be formed from the same metal used to create a source contact and a drain contact for the MOSFET.
摘要翻译：本发明涉及具有集成金属屏蔽的半导体器件。围绕MOSFET的栅极电极形成作为MOSFET的一部分而形成的屏蔽层，以有效地降低漏极 - 栅极电容并增加击穿电压。屏蔽由金属屏蔽触点通孔和源触点延伸部组成。形成在MOSFET的栅极电极和漏极区域之间的金属屏蔽接触通孔可以是一系列紧密间隔的通孔或宽的连续通孔。金属屏蔽接触通孔通过一端的屏蔽隔离层与半导体晶片的表面隔离。金属屏蔽接触通孔在另一端电耦合到源极接触延伸部。源极接触延伸部是金属的，并且可以由用于产生MOSFET的源极接触和漏极接触的相同金属形成。

2. 发明授权

US07772648B1 Performance enhanced silicon-on-insulator technology 有权
标题翻译：性能增强的绝缘体上硅技术
公开(公告)号：US07772648B1
公开(公告)日：2010-08-10
申请号：US11854068
申请日：2007-09-12
申请人： Tony Ivanov , Julio Costa , Michael Carroll , Thomas Gregory McKay , Christian Rye Iversen
发明人： Tony Ivanov , Julio Costa , Michael Carroll , Thomas Gregory McKay , Christian Rye Iversen
IPC分类号： H01L29/72
CPC分类号： H01L29/7317 , H01L27/1203 , H01L29/66265
摘要： The present invention includes a silicon-on-insulator (SOI) wafer that enhances certain performance parameters by increasing silicon device layer and insulator layer thicknesses and increasing silicon handle wafer resistivity. By increasing the silicon device layer thickness, effects of the floating body problem may be significantly reduced. By increasing the insulator layer thickness and the silicon handle wafer resistivity, influences from the silicon handle wafer on devices formed using the silicon device layer may be significantly reduced. As a result, standard tools, methods, and processes may be used.
摘要翻译：本发明包括通过增加硅器件层和绝缘体层厚度并增加硅处理晶片电阻率来增强某些性能参数的绝缘体上硅（SOI）晶片。通过增加硅器件层厚度，浮体问题的影响可能会大大降低。通过增加绝缘体层厚度和硅处理晶片电阻率，可以显着地减少硅处理晶片对使用硅器件层形成的器件的影响。因此，可以使用标准工具，方法和过程。

3. 发明授权

US07135766B1 Integrated power devices and signal isolation structure 有权
标题翻译：集成功率器件和信号隔离结构
公开(公告)号：US07135766B1
公开(公告)日：2006-11-14
申请号：US10999314
申请日：2004-11-30
申请人： Julio Costa , Tony Ivanov , Michael Carroll
发明人： Julio Costa , Tony Ivanov , Michael Carroll
IPC分类号： H01L23/12 , H01L23/053
CPC分类号： H01L24/10 , H01L23/3677 , H01L23/50 , H01L23/5286 , H01L23/66 , H01L24/13 , H01L2223/6622 , H01L2224/05001 , H01L2224/05022 , H01L2224/05572 , H01L2224/056 , H01L2224/13 , H01L2224/13099 , H01L2224/16 , H01L2224/16235 , H01L2924/00014 , H01L2924/01015 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/014 , H01L2924/1305 , H01L2924/1306 , H01L2924/30107 , H01L2924/3025 , H01L2924/00 , H01L2224/05099
摘要： A flip chip power device having an integrated low inductance ground and heat sink path and an isolation structure is provided. A substrate is formed having transistors and an ohmic contact region circumscribing the transistors. Dielectric layers are formed on the substrate, and a common metal layer is formed on the dielectric layers. An isolation metal layer is formed on the dielectric layers above the ohmic contact region. The common metal layer is coupled to a first region of each of the transistors, and the isolation metal layer is coupled to the ohmic contact region. A first bump is formed on the common metal layer, and a second bump is formed on the isolation metal layer. When the power device is attached to a second substrate, the first bump forms a low inductance ground and heat sink path to the second substrate, and an isolation structure is formed.
摘要翻译：提供具有集成的低电感接地和散热路径以及隔离结构的倒装芯片功率器件。形成具有晶体管和限制晶体管的欧姆接触区域的衬底。在基板上形成介电层，在电介质层上形成共同的金属层。在欧姆接触区上方的电介质层上形成隔离金属层。公共金属层耦合到每个晶体管的第一区域，并且隔离金属层耦合到欧姆接触区域。在公共金属层上形成第一凸块，在隔离金属层上形成第二凸块。当功率器件附接到第二衬底时，第一凸块形成到第二衬底的低电感接地和散热通路，并且形成隔离结构。

4. 发明申请

US20110204478A1 INSULATOR LAYER BASED MEMS DEVICES 有权
标题翻译：基于绝缘体层的MEMS器件
公开(公告)号：US20110204478A1
公开(公告)日：2011-08-25
申请号：US13097989
申请日：2011-04-29
申请人： Sangchae Kim , Tony Ivanov , Julio Costa
发明人： Sangchae Kim , Tony Ivanov , Julio Costa
IPC分类号： H01L27/06 , H01L21/02
CPC分类号： B81B7/02 , B81C1/0015 , H01L27/101 , H03H3/0072 , H03H9/02433 , H03H9/2405
摘要： The present invention relates to using an insulator layer between two metal layers of a semiconductor die to provide a micro-electromechanical systems (MEMS) device, such as an ohmic MEMS switch or a capacitive MEMS switch. In an ohmic MEMS switch, the insulator layer may be used to reduce metal undercutting during fabrication, to prevent electrical shorting of a MEMS actuator to a MEMS cantilever, or both. In a capacitive MEMS switch, the insulator layer may be used as a capacitive dielectric between capacitive plates, which are provided by the two metal layers. A fixed capacitive element may be provided by the insulator layer between the two metal layers. In one embodiment of the present invention, an ohmic MEMS switch, a capacitive MEMS switch, a fixed capacitive element, or any combination thereof may be integrated into a single semiconductor die.
摘要翻译：本发明涉及在半导体管芯的两个金属层之间使用绝缘体层来提供诸如欧姆MEMS开关或电容式MEMS开关的微机电系统（MEMS）器件。在欧姆MEMS开关中，绝缘体层可用于在制造过程中减少金属底切，以防止MEMS致动器对MEMS悬臂的电短路，或两者兼而有之。在电容MEMS开关中，绝缘体层可以用作由两个金属层提供的电容板之间的电容电介质。固定的电容元件可以由两个金属层之间的绝缘体层提供。在本发明的一个实施例中，欧姆MEMS开关，电容MEMS开关，固定电容元件或其任何组合可以集成到单个半导体管芯中。

5. 发明授权

US07999643B1 Providing a common environment for multiple MEMS devices 有权
标题翻译：为多个MEMS器件提供共同的环境
公开(公告)号：US07999643B1
公开(公告)日：2011-08-16
申请号：US12129928
申请日：2008-05-30
申请人： David C. Dening , Tony Ivanov , Julio Costa
发明人： David C. Dening , Tony Ivanov , Julio Costa
IPC分类号： H01H51/22
CPC分类号： H01H1/0036 , H01H1/66 , H01H59/0009 , Y10T307/747 , Y10T307/76
摘要： The present invention relates to providing a uniform operating environment for each of multiple devices by providing a common environment to the devices. The common environment is provided by multiple cavities, which are interconnected by at least one environmental pathway, which may be provided by at least one tunnel. The common environment may help provide uniform operating pressure, which may be a partial or near vacuum, a surrounding gas of uniform contents, such as an inert gas or mixture of inert gases, or both. The devices may include micro-electro-mechanical system (MEMS) devices, such as MEMS switches.
摘要翻译：本发明涉及通过向设备提供公共环境来为多个设备中的每一个提供统一的操作环境。共同的环境由多个空腔提供，多个空腔通过至少一个环境路径互连，其可由至少一个隧道提供。常见的环境可能有助于提供均匀的操作压力，其可以是均匀内容物的周围气体的部分或接近真空，例如惰性气体或惰性气体的混合物，或两者。这些装置可以包括诸如MEMS开关的微机电系统（MEMS）装置。

6. 发明授权

US07745892B1 Integrated MEMS switch 有权
标题翻译：集成MEMS开关
公开(公告)号：US07745892B1
公开(公告)日：2010-06-29
申请号：US11955918
申请日：2007-12-13
申请人： Tony Ivanov , Julio Costa , Jonathan Hale Hammond
发明人： Tony Ivanov , Julio Costa , Jonathan Hale Hammond
IPC分类号： H01L29/84
CPC分类号： B81C1/00246 , B81B2201/014 , H01H59/0009
摘要： The present invention provides a MEMS switch that is formed on, not merely placed on, a semiconductor substrate of a semiconductor device. The basic semiconductor substrate includes a handle wafer, an insulator layer over the handle wafer, and a device layer over the insulator layer. The device layer is one in which active semiconductor devices, such as transistors and diodes, may be formed. The MEMS switch is formed over the device layer during fabrication of the semiconductor device. Additional layers, such as connecting layers, passivation layers, and dielectric layers, may be inserted among or between any of these various layers without departing from the essence of the invention. As such, the present invention avoids the need to fabricate MEMS switches apart from the devices that contain circuitry to be associated with the MEMS switches, and to subsequently mount the MEMS switches to modules that circuitry.
摘要翻译：本发明提供一种MEMS开关，其形成在半导体器件的半导体衬底上，而不仅仅放置在其上。基本半导体衬底包括处理晶片，处理晶片上方的绝缘体层以及绝缘体层上方的器件层。器件层是其中可以形成诸如晶体管和二极管的有源半导体器件的器件层。在半导体器件的制造期间，MEMS开关形成在器件层上。在不脱离本发明的实质的情况下，可以在这些各层之间或之间插入附加层，例如连接层，钝化层和电介质层。因此，本发明避免了制造除了与MEMS开关相关联的电路的器件之外的MEMS开关以及随后将MEMS开关安装到该电路的模块的需要。

7. 发明授权

US07956429B1 Insulator layer based MEMS devices 有权
标题翻译：基于绝缘体层的MEMS器件
公开(公告)号：US07956429B1
公开(公告)日：2011-06-07
申请号：US12181356
申请日：2008-07-29
申请人： Sangchae Kim , Tony Ivanov , Julio Costa
发明人： Sangchae Kim , Tony Ivanov , Julio Costa
IPC分类号： H01L29/84 , H01L21/00
CPC分类号： B81B7/02 , B81C1/0015 , H01L27/101 , H03H3/0072 , H03H9/02433 , H03H9/2405
摘要： The present invention relates to using an insulator layer between two metal layers of a semiconductor die to provide a micro-electromechanicalsystems (MEMS) device, such as an ohmic MEMS switch or a capacitive MEMS switch. In an ohmic MEMS switch, the insulator layer may be used to reduce metal undercutting during fabrication, to prevent electrical shorting of a MEMS actuator to a MEMS cantilever, or both. In a capacitive MEMS switch, the insulator layer may be used as a capacitive dielectric between capacitive plates, which are provided by the two metal layers. A fixed capacitive element may be provided by the insulator layer between the two metal layers. In one embodiment of the present invention, an ohmic MEMS switch, a capacitive MEMS switch, a fixed capacitive element, or any combination thereof may be integrated into a single semiconductor die.
摘要翻译：本发明涉及在半导体管芯的两个金属层之间使用绝缘体层来提供诸如欧姆MEMS开关或电容式MEMS开关的微机电系统（MEMS）器件。在欧姆MEMS开关中，绝缘体层可用于在制造过程中减少金属底切，以防止MEMS致动器对MEMS悬臂的电短路，或两者兼而有之。在电容MEMS开关中，绝缘体层可以用作由两个金属层提供的电容板之间的电容电介质。固定的电容元件可以由两个金属层之间的绝缘体层提供。在本发明的一个实施例中，欧姆MEMS开关，电容MEMS开关，固定电容元件或其任何组合可以集成到单个半导体管芯中。

8. 发明授权

US08399333B2 Insulator layer based MEMS devices 有权
标题翻译：基于绝缘体层的MEMS器件
公开(公告)号：US08399333B2
公开(公告)日：2013-03-19
申请号：US13097989
申请日：2011-04-29
申请人： Sangchae Kim , Tony Ivanov , Julio Costa
发明人： Sangchae Kim , Tony Ivanov , Julio Costa
IPC分类号： H01L21/20 , H01L21/02
CPC分类号： B81B7/02 , B81C1/0015 , H01L27/101 , H03H3/0072 , H03H9/02433 , H03H9/2405
摘要： The present invention relates to using an insulator layer between two metal layers of a semiconductor die to provide a micro-electromechanical systems (MEMS) device, such as an ohmic MEMS switch or a capacitive MEMS switch. In an ohmic MEMS switch, the insulator layer may be used to reduce metal undercutting during fabrication, to prevent electrical shorting of a MEMS actuator to a MEMS cantilever, or both. In a capacitive MEMS switch, the insulator layer may be used as a capacitive dielectric between capacitive plates, which are provided by the two metal layers. A fixed capacitive element may be provided by the insulator layer between the two metal layers. In one embodiment of the present invention, an ohmic MEMS switch, a capacitive MEMS switch, a fixed capacitive element, or any combination thereof may be integrated into a single semiconductor die.
摘要翻译：本发明涉及在半导体管芯的两个金属层之间使用绝缘体层来提供诸如欧姆MEMS开关或电容式MEMS开关的微机电系统（MEMS）器件。在欧姆MEMS开关中，绝缘体层可用于在制造过程中减少金属底切，以防止MEMS致动器对MEMS悬臂的电短路，或两者兼而有之。在电容MEMS开关中，绝缘体层可以用作由两个金属层提供的电容板之间的电容电介质。固定的电容元件可以由两个金属层之间的绝缘体层提供。在本发明的一个实施例中，欧姆MEMS开关，电容MEMS开关，固定电容元件或其任何组合可以集成到单个半导体管芯中。

9. 发明授权

US07985611B1 Method for manufacturing integrated MEMS resonator device 有权
标题翻译：集成MEMS谐振器装置的制造方法
公开(公告)号：US07985611B1
公开(公告)日：2011-07-26
申请号：US12961573
申请日：2010-12-07
申请人： Tony Ivanov , Julio Costa , Jonathan Hale Hammond
发明人： Tony Ivanov , Julio Costa , Jonathan Hale Hammond
IPC分类号： H01L21/00
CPC分类号： H03H3/0073 , B81C1/00246 , B81C2203/0714 , B81C2203/0742 , H03H9/02259 , H03H9/2463
摘要： The present invention provides a method for manufacturing a micro-electro-mechanical system (MEMS) resonator device using the same device layer, dielectric layer, and conductive layer that is used to create other electrical devices in a complementary metal oxide semiconductor (CMOS) process.
摘要翻译：本发明提供一种用于制造使用相同器件层，电介质层和导电层的微电子机械系统（MEMS）谐振器器件的方法，该器件层，电介质层和导电层用于在互补金属氧化物半导体（CMOS）工艺中产生其它电子器件。

10. 发明授权

US07868403B1 Integrated MEMS resonator device 有权
标题翻译：集成MEMS谐振器装置
公开(公告)号：US07868403B1
公开(公告)日：2011-01-11
申请号：US11680849
申请日：2007-03-01
申请人： Tony Ivanov , Julio Costa , Jonathan Hale Hammond
发明人： Tony Ivanov , Julio Costa , Jonathan Hale Hammond
IPC分类号： H01L27/14
CPC分类号： H03H3/0073 , B81C1/00246 , B81C2203/0714 , B81C2203/0742 , H03H9/02259 , H03H9/2463
摘要： The present invention provides a method for manufacturing a micro-electro-mechanical system (MEMS) resonator device using the same device layer, dielectric layer, and conductive layer that is used to create other electrical devices in a complementary metal oxide semiconductor (CMOS) process.
摘要翻译：本发明提供一种用于制造使用相同器件层，电介质层和导电层的微电子机械系统（MEMS）谐振器器件的方法，该器件层，电介质层和导电层用于在互补金属氧化物半导体（CMOS）工艺中产生其它电子器件。

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