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1. 发明授权

US09099512B2 Article including a device wafer reversibly mountable to a carrier substrate 有权
标题翻译：本文包括可逆地安装到载体衬底的器件晶片
公开(公告)号：US09099512B2
公开(公告)日：2015-08-04
申请号：US12951530
申请日：2010-11-22
申请人： Tony D. Flaim , Jeremy McCutcheon
发明人： Tony D. Flaim , Jeremy McCutcheon
IPC分类号： H01L23/48 , H01L23/52 , H01L29/06 , H01L21/683
CPC分类号： H01L21/6835 , H01L21/6836 , H01L2221/68318 , H01L2221/68327 , H01L2221/6834 , H01L2924/0002 , H01L2924/19041 , Y10T428/31678 , H01L2924/00
摘要： New temporary bonding methods and articles formed from those methods are provided. The methods comprise bonding a device wafer to a carrier wafer or substrate only at their outer perimeters in order to assist in protecting the device wafer and its device sites during subsequent processing and handling. The edge bonds formed by this method are chemically and thermally resistant, but can also be softened, dissolved, or mechanically disrupted to allow the wafers to be easily separated with very low forces and at or near room temperature at the appropriate stage in the fabrication process.
摘要翻译：提供了从这些方法形成的新的临时粘合方法和制品。这些方法包括仅在其外周界处将器件晶片结合到载体晶片或衬底，以便在随后的处理和处理期间有助于保护器件晶片及其器件位置。通过该方法形成的边缘粘合是化学和耐热的，但也可以被软化，溶解或机械破坏，以允许晶片在非常低的力和在室温下或在室温下在制造过程中的适当阶段容易地分离。

2. 发明授权

US09111981B2 Method for reversibly mounting a device wafer to a carrier substrate 有权
标题翻译：将器件晶片可逆地安装到载体衬底的方法
公开(公告)号：US09111981B2
公开(公告)日：2015-08-18
申请号：US12358951
申请日：2009-01-23
申请人： Tony D. Flaim , Jeremy McCutcheon
发明人： Tony D. Flaim , Jeremy McCutcheon
IPC分类号： H01L21/30 , H01L21/46 , H01L21/683
CPC分类号： H01L21/6835 , H01L21/6836 , H01L2221/68318 , H01L2221/68327 , H01L2221/6834 , H01L2924/0002 , H01L2924/19041 , Y10T428/31678 , H01L2924/00
摘要： New temporary bonding methods and articles formed from those methods are provided. The methods comprise bonding a device wafer to a carrier wafer or substrate only at their outer perimeters in order to assist in protecting the device wafer and its device sites during subsequent processing and handling. The edge bonds formed by this method are chemically and thermally resistant, but can also be softened, dissolved, or mechanically disrupted to allow the wafers to be easily separated with very low forces and at or near room temperature at the appropriate stage in the fabrication process.
摘要翻译：提供了从这些方法形成的新的临时粘合方法和制品。这些方法包括仅在其外周界处将器件晶片结合到载体晶片或衬底，以便在随后的处理和处理期间有助于保护器件晶片及其器件位置。通过该方法形成的边缘粘合是化学和耐热的，但也可以被软化，溶解或机械破坏，以允许晶片在非常低的力和在室温下或在室温下在制造过程中的适当阶段容易地分离。

3. 发明申请

US20140130969A1 METHODS OF TRANSFERRING DEVICE WAFERS OR LAYERS BETWEEN CARRIER SUBSTRATES AND OTHER SURFACES 有权
标题翻译：在载体基板和其他表面之间传输器件波形或层的方法
公开(公告)号：US20140130969A1
公开(公告)日：2014-05-15
申请号：US14131157
申请日：2012-07-09
申请人： Jeremy McCutcheon , Tony D. Flaim , Susan Bailey
发明人： Jeremy McCutcheon , Tony D. Flaim , Susan Bailey
IPC分类号： B32B38/10 , B32B7/06 , B32B7/14 , B32B43/00 , B32B7/12
CPC分类号： B32B38/10 , B32B7/06 , B32B7/12 , B32B7/14 , B32B43/006 , B32B2457/14 , H01L21/2007 , H01L21/6835 , H01L2221/68318 , H01L2221/68327 , H01L2221/6834 , H01L2221/68368 , H01L2221/68381 , Y10T156/11 , Y10T428/24331 , Y10T428/24851 , Y10T428/30 , Y10T428/31598 , Y10T428/31667
摘要： New temporary bonding methods and articles formed from those methods are provided. In one embodiment, the methods comprise coating a device or other ultrathin layer on a growth substrate with a rigid support layer and then bonding that stack to a carrier substrate. The growth substrate can then be removed and the ultrathin layer mounted on a final support. In another embodiment, the invention provides methods of handling device layers during processing that must occur on both sides of the fragile layer without damaging it. This is accomplished via the sequential use of two carriers, one on each side of the device layer, bonded with different bonding compositions for selective debonding.
摘要翻译：提供了从这些方法形成的新的临时粘合方法和制品。在一个实施方案中，所述方法包括用刚性支撑层在生长衬底上涂覆器件或其它超薄层，然后将该堆叠结合到载体衬底。然后可以除去生长衬底，并将超薄层安装在最终的载体上。在另一个实施例中，本发明提供了在处理期间处理装置层的方法，该方法必须在脆性层的两侧出现而不会损坏脆性层。这是通过连续使用两个载体来实现的，一个在器件层的每一侧上，用不同的粘合组合物键合，用于选择性脱粘。

4. 发明授权

US09263314B2 Multiple bonding layers for thin-wafer handling 有权
公开(公告)号：US09263314B2
公开(公告)日：2016-02-16
申请号：US13198294
申请日：2011-08-04
申请人： Rama Puligadda , Xing-Fu Zhong , Tony D. Flaim , Jeremy McCutcheon
发明人： Rama Puligadda , Xing-Fu Zhong , Tony D. Flaim , Jeremy McCutcheon
IPC分类号： H01L21/00 , H01L21/683 , H01L21/20 , H01L23/00 , B32B38/00 , B32B38/10 , B32B43/00
CPC分类号： H01L21/6835 , B32B38/0008 , B32B38/10 , B32B43/006 , H01L21/2007 , H01L21/6836 , H01L24/83 , H01L2221/68318 , H01L2221/68327 , H01L2221/6834 , H01L2221/68381 , H01L2924/12041 , H01L2924/12042 , H01L2924/14 , H01L2924/1461 , H01L2924/351 , Y10T156/10 , Y10T156/11 , Y10T156/1126 , Y10T428/24942 , Y10T428/26 , Y10T428/31511 , Y10T428/31551 , Y10T428/31663 , Y10T428/31721 , Y10T428/31725 , Y10T428/31935 , Y10T428/31938 , H01L2924/00
摘要： Multiple bonding layer schemes that temporarily join semiconductor substrates are provided. In the inventive bonding scheme, at least one of the layers is directly in contact with the semiconductor substrate and at least two layers within the scheme are in direct contact with one another. The present invention provides several processing options as the different layers within the multilayer structure perform specific functions. More importantly, it will improve performance of the thin-wafer handling solution by providing higher thermal stability, greater compatibility with harsh backside processing steps, protection of bumps on the front side of the wafer by encapsulation, lower stress in the debonding step, and fewer defects on the front side.

5. 发明申请

US20140162034A2 MULTIPLE BONDING LAYERS FOR THIN-WAFER HANDLING 有权
公开(公告)号：US20140162034A2
公开(公告)日：2014-06-12
申请号：US13198294
申请日：2011-08-04
申请人： Rama Puligadda , Xing-Fu Zhong , Tony D. Flaim , Jeremy McCutcheon
发明人： Rama Puligadda , Xing-Fu Zhong , Tony D. Flaim , Jeremy McCutcheon
IPC分类号： B32B27/32 , B32B7/02 , B32B27/40 , B32B27/36 , B32B27/00 , H01L21/30 , B32B27/38
CPC分类号： H01L21/6835 , B32B38/0008 , B32B38/10 , B32B43/006 , H01L21/2007 , H01L21/6836 , H01L24/83 , H01L2221/68318 , H01L2221/68327 , H01L2221/6834 , H01L2221/68381 , H01L2924/12041 , H01L2924/12042 , H01L2924/14 , H01L2924/1461 , H01L2924/351 , Y10T156/10 , Y10T156/11 , Y10T156/1126 , Y10T428/24942 , Y10T428/26 , Y10T428/31511 , Y10T428/31551 , Y10T428/31663 , Y10T428/31721 , Y10T428/31725 , Y10T428/31935 , Y10T428/31938 , H01L2924/00
摘要： Multiple bonding layer schemes that temporarily join semiconductor substrates are provided. In the inventive bonding scheme, at least one of the layers is directly in contact with the semiconductor substrate and at least two layers within the scheme are in direct contact with one another. The present invention provides several processing options as the different layers within the multilayer structure perform specific functions. More importantly, it will improve performance of the thin-wafer handling solution by providing higher thermal stability, greater compatibility with harsh backside processing steps, protection of bumps on the front side of the wafer by encapsulation, lower stress in the debonding step, and fewer defects on the front side.

6. 发明申请

US20120034437A1 MULTIPLE BONDING LAYERS FOR THIN-WAFER HANDLING 有权
标题翻译：多层结合层用于薄膜处理
公开(公告)号：US20120034437A1
公开(公告)日：2012-02-09
申请号：US13198294
申请日：2011-08-04
申请人： Rama Puligadda , Xing-Fu Zhong , Tony D. Flaim , Jeremy McCutcheon
发明人： Rama Puligadda , Xing-Fu Zhong , Tony D. Flaim , Jeremy McCutcheon
IPC分类号： B32B27/32 , B32B7/02 , B32B27/40 , B32B27/36 , B32B27/00 , H01L21/30 , B32B27/38
CPC分类号： H01L21/6835 , B32B38/0008 , B32B38/10 , B32B43/006 , H01L21/2007 , H01L21/6836 , H01L24/83 , H01L2221/68318 , H01L2221/68327 , H01L2221/6834 , H01L2221/68381 , H01L2924/12041 , H01L2924/12042 , H01L2924/14 , H01L2924/1461 , H01L2924/351 , Y10T156/10 , Y10T156/11 , Y10T156/1126 , Y10T428/24942 , Y10T428/26 , Y10T428/31511 , Y10T428/31551 , Y10T428/31663 , Y10T428/31721 , Y10T428/31725 , Y10T428/31935 , Y10T428/31938 , H01L2924/00
摘要： Multiple bonding layer schemes that temporarily join semiconductor substrates are provided. In the inventive bonding scheme, at least one of the layers is directly in contact with the semiconductor substrate and at least two layers within the scheme are in direct contact with one another. The present invention provides several processing options as the different layers within the multilayer structure perform specific functions. More importantly, it will improve performance of the thin-wafer handling solution by providing higher thermal stability, greater compatibility with harsh backside processing steps, protection of bumps on the front side of the wafer by encapsulation, lower stress in the debonding step, and fewer defects on the front side.
摘要翻译：提供临时连接半导体衬底的多个结合层方案。在本发明的接合方案中，至少一个层直接与半导体衬底接触，且该方案中的至少两个层彼此直接接触。本发明提供了多个处理选择，因为多层结构内的不同层执行特定的功能。更重要的是，它将通过提供更高的热稳定性，与苛刻的背面处理步骤的更大兼容性，通过封装保护晶片正面的凸块，在脱粘步骤中降低应力和减少剥离步骤来提高薄晶片处理解决方案的性能正面的缺陷。

7. 发明申请

US20090218560A1 METHOD FOR REVERSIBLY MOUNTING A DEVICE WAFER TO A CARRIER SUBSTRATE 有权
标题翻译：用于将器件波形反向安装到载体基板的方法
公开(公告)号：US20090218560A1
公开(公告)日：2009-09-03
申请号：US12358951
申请日：2009-01-23
申请人： Tony D. Flaim , Jeremy McCutcheon
发明人： Tony D. Flaim , Jeremy McCutcheon
IPC分类号： H01L29/02 , H01L21/306 , H01L29/84 , H01L33/00 , H01L23/495 , H01L29/86 , H01L29/20 , H01L23/498 , B32B38/00 , B32B17/06 , B32B15/04 , B32B9/00
CPC分类号： H01L21/6835 , H01L21/6836 , H01L2221/68318 , H01L2221/68327 , H01L2221/6834 , H01L2924/0002 , H01L2924/19041 , Y10T428/31678 , H01L2924/00
摘要： New temporary bonding methods and articles formed from those methods are provided. The methods comprise bonding a device wafer to a carrier wafer or substrate only at their outer perimeters in order to assist in protecting the device wafer and its device sites during subsequent processing and handling. The edge bonds formed by this method are chemically and thermally resistant, but can also be softened, dissolved, or mechanically disrupted to allow the wafers to be easily separated with very low forces and at or near room temperature at the appropriate stage in the fabrication process.
摘要翻译：提供了从这些方法形成的新的临时粘合方法和制品。这些方法包括仅在其外周界处将器件晶片结合到载体晶片或衬底，以便在随后的处理和处理期间有助于保护器件晶片及其器件位置。通过该方法形成的边缘粘合是化学和耐热的，但也可以被软化，溶解或机械破坏，以允许晶片在非常低的力和在室温下或在室温下在制造过程中的适当阶段容易地分离。

8. 发明授权

US09827757B2 Methods of transferring device wafers or layers between carrier substrates and other surfaces 有权
公开(公告)号：US09827757B2
公开(公告)日：2017-11-28
申请号：US14131157
申请日：2012-07-09
申请人： Jeremy McCutcheon , Tony D. Flaim , Susan Bailey
发明人： Jeremy McCutcheon , Tony D. Flaim , Susan Bailey
IPC分类号： B29C65/48 , B32B9/04 , B32B37/12 , B32B37/16 , B32B38/10 , B32B43/00 , H01L21/683 , B32B7/06 , B32B7/12 , B32B7/14 , H01L21/20
CPC分类号： B32B38/10 , B32B7/06 , B32B7/12 , B32B7/14 , B32B43/006 , B32B2457/14 , H01L21/2007 , H01L21/6835 , H01L2221/68318 , H01L2221/68327 , H01L2221/6834 , H01L2221/68368 , H01L2221/68381 , Y10T156/11 , Y10T428/24331 , Y10T428/24851 , Y10T428/30 , Y10T428/31598 , Y10T428/31667
摘要： New temporary bonding methods and articles formed from those methods are provided. In one embodiment, the methods comprise coating a device or other ultrathin layer on a growth substrate with a rigid support layer and then bonding that stack to a carrier substrate. The growth substrate can then be removed and the ultrathin layer mounted on a final support. In another embodiment, the invention provides methods of handling device layers during processing that must occur on both sides of the fragile layer without damaging it. This is accomplished via the sequential use of two carriers, one on each side of the device layer, bonded with different bonding compositions for selective debonding.

9. 发明申请

US20110069467A1 METHOD FOR REVERSIBLY MOUNTING A DEVICE WAFER TO A CARRIER SUBSTRATE 有权
标题翻译：用于将器件波形反向安装到载体基板的方法
公开(公告)号：US20110069467A1
公开(公告)日：2011-03-24
申请号：US12951530
申请日：2010-11-22
申请人： Tony D. Flaim , Jeremy McCutcheon
发明人： Tony D. Flaim , Jeremy McCutcheon
IPC分类号： H05K7/00
CPC分类号： H01L21/6835 , H01L21/6836 , H01L2221/68318 , H01L2221/68327 , H01L2221/6834 , H01L2924/0002 , H01L2924/19041 , Y10T428/31678 , H01L2924/00
摘要： New temporary bonding methods and articles formed from those methods are provided. The methods comprise bonding a device wafer to a carrier wafer or substrate only at their outer perimeters in order to assist in protecting the device wafer and its device sites during subsequent processing and handling. The edge bonds formed by this method are chemically and thermally resistant, but can also be softened, dissolved, or mechanically disrupted to allow the wafers to be easily separated with very low forces and at or near room temperature at the appropriate stage in the fabrication process.
摘要翻译：提供了从这些方法形成的新的临时粘合方法和制品。这些方法包括仅在其外周界处将器件晶片结合到载体晶片或衬底，以便在随后的处理和处理期间有助于保护器件晶片及其器件位置。通过该方法形成的边缘粘合是化学和耐热的，但也可以被软化，溶解或机械破坏，以允许晶片在非常低的力和在室温下或在室温下在制造过程中的适当阶段容易地分离。

10. 发明授权

US07790231B2 Automated process and apparatus for planarization of topographical surfaces 有权
标题翻译：地形表面平面化的自动化过程和装置
公开(公告)号：US07790231B2
公开(公告)日：2010-09-07
申请号：US10887530
申请日：2004-07-08
申请人： Jeremy McCutcheon , James E. Lamb, III
发明人： Jeremy McCutcheon , James E. Lamb, III
IPC分类号： B05D3/12 , B05D3/06
CPC分类号： H01L21/31058 , H01L21/67092 , H01L21/6719
摘要： An improved apparatus (20) and method are provided for effective, high speed contact planarization of coated curable substrates such as microelectronic devices to achieve very high degrees of planarization. The apparatus (20) includes a planarizing unit (28) preferably having an optical flat flexible sheet (88) and a backup optical flat body (82), and a curing assembly (30). In operation, a substrate (78) having a planarizable coating (76) is placed within a vacuum chamber (26) beneath sheet (88) and body (82). A pressure differential is created across sheet (88) so as to deflect the sheet into contact with a central region C of the coating (76), whereupon the coating (76) is brought into full planarizing contact with sheet (88) and body (82) by means of a support (114) and vacuum chuck (120); at this point the coating (76) is cured using assembly (30). After curing, a pressure differential is established across sheet (88) for sequentially separating the sheet from the peripheral portion P of the coating, and then full separation of the sheet (88) and coating (76).
摘要翻译：提供了一种改进的装置（20）和方法，用于有效的高速接触平面化涂覆的可固化基板例如微电子器件以实现非常高的平坦度。装置（20）包括平坦化单元（28），优选地具有光学平面柔性片（88）和备用光学平坦体（82），以及固化组件（30）。在操作中，具有可平面化涂层（76）的基板（78）被放置在薄片（88）和主体（82）下方的真空室（26）内。在片材（88）之间产生压差，以便将片材偏转成与涂层（76）的中心区域C接触，于是涂层（76）与片材（88）和主体（88）完全平坦化接触 82）通过支撑件（114）和真空卡盘（120）; 在这一点上，涂层（76）使用组件（30）固化。固化后，在片材（88）之间建立用于将片材从涂层的周边部分P顺序分离，然后片材（88）和涂层（76）的完全分离的压力差。

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