专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20130032600A1 Valve For Container Filled With Halogen Gas Or Halogen Compound Gas 审中-公开
标题翻译：装有卤素气体或卤素化合物气体的集装箱阀门
公开(公告)号：US20130032600A1
公开(公告)日：2013-02-07
申请号：US13641642
申请日：2011-03-08
申请人： Tomonori Umezaki , Kenji Tanaka , Akifumi Yao , Tatsuo Miyazaki , Isamu Mori , Tadayuki Kawashima
发明人： Tomonori Umezaki , Kenji Tanaka , Akifumi Yao , Tatsuo Miyazaki , Isamu Mori , Tadayuki Kawashima
IPC分类号： F16K7/12 , F17C13/04 , F16K1/30
CPC分类号： F16K1/302 , F16J3/02 , F16K7/126 , F16K7/14 , F16K7/16 , F16K25/00 , F17C2205/0329 , F17C2205/0385 , F17C2205/0394 , F17C2223/0123 , F17C2260/036 , F17C2270/0518
摘要： A direct-touch diaphragm valve according to the present invention includes a valve body having inlet and outlet passages, a valve chamber being in communication with the inlet and outlet passages, a valve seat located around an open inner end of the inlet passage and a diaphragm arranged on the valve seat so as to hermetically seal the valve chamber and open or close the inlet and outlet passages, wherein the valve seat and the diaphragm have respective contact surfaces formed therebetween such that: such that: the contact surface of the valve seat has a surface roughness Ra of 0.1 to 10.0 μm and a curvature radius Ra of 100 to 1000 mm; and the area ratio Sb/Sa of a contact area Sb of the valve seat with the diaphragm to a gas contact surface area Sa of the diaphragm ranges from 0.2 to 10%.
摘要翻译：根据本发明的直接接触式隔膜阀包括具有入口和出口通道的阀体，与入口和出口通道连通的阀室，位于入口通道的开口内端周围的阀座和隔膜设置在所述阀座上，以便气密地密封所述阀室并打开或关闭所述入口和出口通道，其中所述阀座和所述隔膜具有形成在其间的各自的接触表面，使得：所述阀座的接触表面具有表面粗糙度Ra为0.1〜10.0μm，曲率半径Ra为100〜1000mm; 阀座与隔膜的接触面积Sb与隔膜的气体接触面积Sa的面积比Sb / Sa为0.2〜10％。

2. 发明申请

US20130221024A1 HALOGEN-CONTAINING GAS SUPPLY APPARATUS AND HALOGEN-CONTAINING GAS SUPPLY METHOD 审中-公开
标题翻译：含氢气供应装置和含氢气供应方法
公开(公告)号：US20130221024A1
公开(公告)日：2013-08-29
申请号：US13878292
申请日：2011-09-07
申请人： Akifumi Yao , Tomonori Umezaki , Keita Nakahara , Yuta Takeda
发明人： Akifumi Yao , Tomonori Umezaki , Keita Nakahara , Yuta Takeda
IPC分类号： F17C7/00 , F17C13/00 , F16L55/027
CPC分类号： F17C7/00 , F16L55/02736 , F17C13/00 , F17C13/002 , F17C2221/03 , F17C2223/0123 , F17C2223/036 , F17C2227/045 , F17C2260/044 , F17C2260/053 , F17C2270/0518
摘要： Disclosed is a halogen-containing gas supply apparatus for supplying a halogen-containing gas from a container filled with the halogen-containing gas at a high pressure to an external apparatus, the halogen-containing gas supply apparatus including: a supply tube connecting the container and the external apparatus; a supply valve attached to the supply tube to supply the halogen-containing gas from the container; and a shock wave prevention mechanism installed downstream of the supply valve to prevent generation of a shock wave.
摘要翻译：本发明公开了一种含卤素气体供给装置，其特征在于，所述含卤素气体供给装置包括：供给管，其将所述容器和外部设备; 供给阀，附接到供应管以从容器供应含卤素气体; 以及安装在供给阀下游的防冲击机构，以防止产生冲击波。

3. 发明授权

US09165776B2 Dry etching method 有权
标题翻译：干蚀刻法
公开(公告)号：US09165776B2
公开(公告)日：2015-10-20
申请号：US14238639
申请日：2012-08-08
申请人： Tomonori Umezaki , Isamu Mori
发明人： Tomonori Umezaki , Isamu Mori
IPC分类号： C03C15/00 , H01L21/306 , H01L21/3213 , H01L27/115
CPC分类号： H01L21/306 , H01L21/32137 , H01L27/11556 , H01L27/11582
摘要： There is provided according to the present invention a dry etching method for a laminated film, the laminated film being formed on a substrate and having a laminated structure in which silicon layers and insulating layers are laminated together with a hole or groove defined therein in a direction perpendicular to a surface of the substrate, the dry etching method comprising etching, with an etching gas, parts of the silicon layers appearing on an inner surface of the hole or groove, characterized in that the etching gas comprises: at least one kind of gas selected from the group consisting of ClF3, BrF5, BrF3, IF7 and IF5; and F2. It is possible by such a dry etching method to prevent non-uniformity of etching depth between the silicon layers.
摘要翻译：根据本发明，提供了一种用于层压膜的干法蚀刻方法，该层叠膜形成在基板上，并且具有层叠结构，其中硅层和绝缘层与限定在其中的孔或凹槽的方向层叠在一起垂直于衬底的表面的干蚀刻方法包括用蚀刻气体蚀刻出现在孔或凹槽的内表面上的部分硅层，其特征在于蚀刻气体包括：至少一种气体选自ClF 3，BrF 5，BrF 3，IF 7和IF 5; 和F2。通过这种干蚀刻方法可以防止硅层之间的蚀刻深度不均匀。

4. 发明申请

US20120298911A1 Dry Etching Agent and Dry Etching Method Using the Same 有权
标题翻译：干蚀刻剂和干法蚀刻方法
公开(公告)号：US20120298911A1
公开(公告)日：2012-11-29
申请号：US13576093
申请日：2011-01-25
申请人： Yasuo Hibino , Tomonori Umezaki , Akiou Kikuchi , Isamu Mori , Satoru Okamoto
发明人： Yasuo Hibino , Tomonori Umezaki , Akiou Kikuchi , Isamu Mori , Satoru Okamoto
IPC分类号： C09K13/00
CPC分类号： H01L21/31055 , C09K13/00 , H01L21/3065 , H01L21/31116 , H01L21/32136
摘要： A dry etching agent according to the present invention contains (A) a fluorinated propyne represented by the chemical formula: CF3CCX where X is H, F, Cl, Br, I, CH3, CFH2 or CF2H; and either of: (B) at least one kind of gas selected from the group consisting of O2, O3, CO, CO2, COCl2 and COF2; (C) at least one kind of gas selected from the group consisting of F2, NF3, Cl2, Br2, I2 and YFn where Y is Cl, Br or I; and n is an integer of 1 to 5; and (D) at least one kind of gas selected from the group consisting of CF4, CHF3, C2F6, C2F5H, C2F4H2, C3F8, C3F4H2, C3ClF3H and C4F8. This dry etching agent has a small environmental load and a wide process window and can be applied for high-aspect-ratio processing without special operations such as substrate excitation.
摘要翻译：根据本发明的干蚀刻剂包含（A）由化学式CF3CCX表示的氟化丙炔，其中X是H，F，Cl，Br，I，CH 3，CFH 2或CF 2 H; 和（B）选自O 2，O 3，CO，CO 2，COCl 2和COF 2中的至少一种气体; （C）选自由F2，NF3，Cl2，Br2，I2和YFn组成的组中的至少一种气体，其中Y是Cl，Br或I; n为1〜5的整数。和（D）选自CF4，CHF3，C2F6，C2F5H，C2F4H2，C3F8，C3F4H2，C3ClF3H和C4F8中的至少一种气体。这种干蚀刻剂具有小的环境负荷和宽的工艺窗口，并且可以应用于高纵横比处理，而不需要诸如基板激励的特殊操作。

5. 发明申请

US20120180811A1 DRY CLEANING METHOD OF SUBSTRATE PROCESSING APPARATUS 有权
标题翻译：基板加工装置的干燥清洗方法
公开(公告)号：US20120180811A1
公开(公告)日：2012-07-19
申请号：US13351641
申请日：2012-01-17
申请人： Isao GUNJI , Yusaku Izawa , Hitoshi Itoh , Tomonori Umezaki , Yuta Takeda , Isamu Mori
发明人： Isao GUNJI , Yusaku Izawa , Hitoshi Itoh , Tomonori Umezaki , Yuta Takeda , Isamu Mori
IPC分类号： B08B7/00
CPC分类号： C23C16/4405
摘要： A dry cleaning method of a substrate processing apparatus includes forming a metal oxide by oxidizing a metal film adhered to the inside of a processing chamber of the substrate processing apparatus; forming a complex by reacting the metal oxide with β-diketone; and sublimating the complex to be removed. A cleaning gas containing oxygen and β-diketone is supplied into the processing chamber while heating the inside of the processing chamber. A flow rate ratio of oxygen to β-diketone in the cleaning gas is set such that a formation rate of the metal oxide is lower than a formation rate of the complex.
摘要翻译：基板处理装置的干洗方法包括通过氧化附着在基板处理装置的处理室内部的金属膜来形成金属氧化物; 通过使金属氧化物与二 - 二酮反应形成络合物; 并升华待除去的复合物。含有氧和二酮的清洁气体在加热处理室的内部时被供应到处理室中。将清洗气体中的氧与二酮的流量比设定为使得金属氧化物的生成速度低于络合物的形成速度。

6. 发明授权

US09093388B2 Dry etching agent and dry etching method using the same 有权
标题翻译：干蚀刻剂和干蚀刻法使用该方法
公开(公告)号：US09093388B2
公开(公告)日：2015-07-28
申请号：US13576093
申请日：2011-01-25
申请人： Yasuo Hibino , Tomonori Umezaki , Akiou Kikuchi , Isamu Mori , Satoru Okamoto
发明人： Yasuo Hibino , Tomonori Umezaki , Akiou Kikuchi , Isamu Mori , Satoru Okamoto
IPC分类号： C09K13/00 , C09K13/04 , C09K13/08 , B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00 , C23F3/00 , H01L21/311
CPC分类号： H01L21/31055 , C09K13/00 , H01L21/3065 , H01L21/31116 , H01L21/32136
摘要： A dry etching agent according to the present invention contains (A) a fluorinated propyne represented by the chemical formula: CF3C≡CX where X is H, F, Cl, Br, I, CH3, CFH2 or CF2H; and either of: (B) at least one kind of gas selected from the group consisting of O2, O3, CO, CO2, COCl2 and COF2; (C) at least one kind of gas selected from the group consisting of F2, NF3, Cl2, Br2, I2 and YFn where Y is Cl, Br or I; and n is an integer of 1 to 5; and (D) at least one kind of gas selected from the group consisting of CF4, CHF3, C2F6, C2F5H, C2F4H2, C3F8, C3F4H2, C3ClF3H and C4F8. This dry etching agent has a small environmental load and a wide process window and can be applied for high-aspect-ratio processing without special operations such as substrate excitation.
摘要翻译：根据本发明的干蚀刻剂包含（A）由化学式CF 3C≡CX表示的氟化丙炔，其中X为H，F，Cl，Br，I，CH 3，CFH 2或CF 2 H; 和（B）选自O 2，O 3，CO，CO 2，COCl 2和COF 2中的至少一种气体; （C）选自由F2，NF3，Cl2，Br2，I2和YFn组成的组中的至少一种气体，其中Y是Cl，Br或I; n为1〜5的整数。和（D）选自CF4，CHF3，C2F6，C2F5H，C2F4H2，C3F8，C3F4H2，C3ClF3H和C4F8中的至少一种气体。这种干蚀刻剂具有小的环境负荷和宽的工艺窗口，并且可以应用于高纵横比处理，而不需要诸如基板激励的特殊操作。

7. 发明申请

US20140206196A1 Dry Etching Method 有权
标题翻译：干法蚀刻法
公开(公告)号：US20140206196A1
公开(公告)日：2014-07-24
申请号：US14238639
申请日：2012-08-08
申请人： Tomonori Umezaki , Isamu Mori
发明人： Tomonori Umezaki , Isamu Mori
IPC分类号： H01L21/306
CPC分类号： H01L21/306 , H01L21/32137 , H01L27/11556 , H01L27/11582
摘要： There is provided according to the present invention a dry etching method for a laminated film, the laminated film being formed on a substrate and having a laminated structure in which silicon layers and insulating layers are laminated together with a hole or groove defined therein in a direction perpendicular to a surface of the substrate, the dry etching method comprising etching, with an etching gas, parts of the silicon layers appearing on an inner surface of the hole or groove, characterized in that the etching gas comprises: at least one kind of gas selected from the group consisting of ClF3, BrF5, BrF3, IF7 and IF5; and F2. It is possible by such a dry etching method to prevent non-uniformity of etching depth between the silicon layers.
摘要翻译：根据本发明，提供了一种用于层压膜的干蚀刻方法，该层压膜形成在基板上，并且具有层叠结构，其中硅层和绝缘层与限定在其中的孔或凹槽的方向层叠在一起垂直于衬底的表面的干蚀刻方法包括用蚀刻气体蚀刻出现在孔或凹槽的内表面上的部分硅层，其特征在于蚀刻气体包括：至少一种气体选自ClF 3，BrF 5，BrF 3，IF 7和IF 5; 和F2。通过这种干蚀刻方法可以防止硅层之间的蚀刻深度不均匀。

8. 发明授权

US09017571B2 Dry etching agent and dry etching method 有权
标题翻译：干蚀刻剂和干蚀刻法
公开(公告)号：US09017571B2
公开(公告)日：2015-04-28
申请号：US13808506
申请日：2011-06-24
申请人： Tomonori Umezaki , Yasuo Hibino , Isamu Mori , Satoru Okamoto , Akiou Kikuchi
发明人： Tomonori Umezaki , Yasuo Hibino , Isamu Mori , Satoru Okamoto , Akiou Kikuchi
IPC分类号： C09K13/00 , C09K13/04 , C09K13/08 , C09K13/06 , H01L21/311
CPC分类号： C09K13/00 , C09K13/08 , H01L21/31116
摘要： A dry etching agent according to the present invention preferably contains: (A) 1,3,3,3-tetrafluoropropene; (B) at least one kind of additive gas selected from the group consisting of H2, O2, O3, CO, CO2, COCl2, COF2, CF3OF, NO2, F2, NF3, Cl2, Br2, I2, CH4, C2H2, C2H4, C2H6, C3H4, C3H6, C3H8, HF, HI, HBr, HCl, NO, NH3 and YFn (where Y represents Cl, Br or I; and n represents an integer satisfying 1≦n≦7); and (C) an inert gas. This dry etching agent has less effect on the global environment and can obtain a significant improvement in process window and address processing requirements such as low side etching ratio and high aspect ratio even without any special substrate excitation operation.
摘要翻译：根据本发明的干蚀刻剂优选含有：（A）1,3,3,3-四氟丙烯; （B）选自H2，O2，O3，CO，CO2，COCl2，COF2，CF3OF，NO2，F2，NF3，Cl2，Br2，I2，CH4，C2H2，C2H4等的至少一种添加剂气体， C2H6，C3H4，C3H6，C3H8，HF，HI，HBr，HCl，NO，NH3和YFn（其中Y表示Cl，Br或I; n表示满足1＆nlE的整数; n＆nlE; 7）; 和（C）惰性气体。这种干蚀刻剂对全球环境的影响较小，即使没有特殊的基板激励操作，也可以显着改善工艺窗口和地址处理要求，如低边蚀刻率和高纵横比。

9. 发明申请

US20140302683A1 DRY ETCHING AGENT 审中-公开
标题翻译：干蚀剂
公开(公告)号：US20140302683A1
公开(公告)日：2014-10-09
申请号：US14232054
申请日：2012-06-13
申请人： Akiou Kikuchi , Tomonori Umezaki , Yasuo Hibino , Isamu Mori , Satoru Okamoto
发明人： Akiou Kikuchi , Tomonori Umezaki , Yasuo Hibino , Isamu Mori , Satoru Okamoto
IPC分类号： H01L21/3065 , C09K13/08 , C09K13/00
CPC分类号： H01L21/3065 , C09K13/00 , C09K13/08 , H01L21/31116 , H01L21/32137
摘要： The invention is directed to providing a dry etching agent having little effect on the global environment but having the required performance. Provided is a dry etching agent containing, each at a specific vol %: (A) a fluorine-containing unsaturated hydrocarbon represented by the formula CaFbHc (in the formula, a, b and c are each positive integers and satisfy the correlations of 2≦a≦5, c b+c and b≦a+c, excluding the case where a=3, b=4 or c=2); (B) at least one kind of gas selected from the group consisting of O2, O3, CO, CO2, COCl2, COF2, F2, NF3, Cl2, Br2, I2, and YFn (where Y is Cl, Br or I and n is an integer of 1 to 5); and (C) at least one kind of gas selected from the group consisting of N2, He, Ar, Ne, Xe, and Kr.
摘要翻译：本发明涉及提供对全球环境几乎没有影响但具有所需性能的干蚀刻剂。本发明提供一种干蚀刻剂，其特征在于：体积％：（A）由式CaFbHc表示的含氟不饱和烃（式中，a，b和c分别为正整数，满足2＆nlE的相关性; a + n，b = 4或c = 2的情况除外）; a，c，b，c，b + c，b + （B）选自O 2，O 3，CO，CO 2，COCl 2，COF 2，F 2，NF 3，Cl 2，Br 2，I 2和Y F n中的至少一种气体（其中Y为Cl，Br或I和n 是1〜5的整数）; 和（C）选自由N 2，He，Ar，Ne，Xe和Kr组成的组中的至少一种气体。

10. 发明授权

US08562751B2 Dry cleaning method of substrate processing apparatus 有权
标题翻译：基板处理装置的干洗方法
公开(公告)号：US08562751B2
公开(公告)日：2013-10-22
申请号：US13351641
申请日：2012-01-17
申请人： Isao Gunji , Yusaku Izawa , Hitoshi Itoh , Tomonori Umezaki , Yuta Takeda , Isamu Mori
发明人： Isao Gunji , Yusaku Izawa , Hitoshi Itoh , Tomonori Umezaki , Yuta Takeda , Isamu Mori
IPC分类号： C23G1/00
CPC分类号： C23C16/4405
摘要： A dry cleaning method of a substrate processing apparatus includes forming a metal oxide by oxidizing a metal film adhered to the inside of a processing chamber of the substrate processing apparatus; forming a complex by reacting the metal oxide with β-diketone; and sublimating the complex to be removed. A cleaning gas containing oxygen and β-diketone is supplied into the processing chamber while heating the inside of the processing chamber. A flow rate ratio of oxygen to β-diketone in the cleaning gas is set such that a formation rate of the metal oxide is lower than a formation rate of the complex.
摘要翻译：基板处理装置的干洗方法包括通过氧化附着在基板处理装置的处理室内部的金属膜来形成金属氧化物; 通过使金属氧化物与β-二酮反应形成络合物; 并升华待除去的复合物。含有氧和β-二酮的清洁气体在加热处理室内部的同时被供给到处理室中。清洗气体中氧与β-二酮的流量比设定为使得金属氧化物的生成速度低于配合物的形成速度。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式