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1. 发明申请

US20080198886A1 NITRIDE SEMICONDUCTOR LASER ELEMENT 有权
标题翻译：氮化物半导体激光元件
公开(公告)号：US20080198886A1
公开(公告)日：2008-08-21
申请号：US12033378
申请日：2008-02-19
申请人： Atsuo MICHIUE , Tomonori MORIZUMI , Hiroaki TAKAHASHI
发明人： Atsuo MICHIUE , Tomonori MORIZUMI , Hiroaki TAKAHASHI
IPC分类号： H01S5/00
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/0021 , H01S5/0282 , H01S5/0283 , H01S5/1082 , H01S5/2201 , H01S5/34333 , H01S2301/176 , H01S2304/04
摘要： The present invention provides a nitride semiconductor laser element, comprising: a nitride semiconductor structure having a first nitride semiconductor layer, a second nitride semiconductor layer, and an active layer provided between the first and second nitride semiconductor layers; a cavity end face provided to the nitride semiconductor structure; and a protective film having a hexagonal crystal structure, and having a first region provided on a first crystal surface of the nitride semiconductor structure in the cavity end face and a second region provided on a second crystal surface in the surface of at least one of the first and second nitride semiconductor layer, the first and second regions of the protective film are oriented in the same axial direction as that of the respective first and second crystal surfaces.
摘要翻译：本发明提供了一种氮化物半导体激光元件，包括：具有第一氮化物半导体层，第二氮化物半导体层和设置在第一和第二氮化物半导体层之间的有源层的氮化物半导体结构; 设置到所述氮化物半导体结构的腔端面; 以及具有六方晶系结构的保护膜，并且具有设置在所述空腔端面中的所述氮化物半导体结构的第一晶面上的第一区域和设置在所述第二晶体表面中的至少一个第一和第二氮化物半导体层，保护膜的第一和第二区域被定向在与第一和第二晶体表面相同的轴向方向上。

2. 发明申请

US20100158066A1 NITRIDE SEMICONDUCTOR LASER ELEMENT 有权
标题翻译：氮化物半导体激光元件
公开(公告)号：US20100158066A1
公开(公告)日：2010-06-24
申请号：US12716962
申请日：2010-03-03
申请人： Tomonori MORIZUMI , Atsuo MICHIUE , Hiroaki TAKAHASHI
发明人： Tomonori MORIZUMI , Atsuo MICHIUE , Hiroaki TAKAHASHI
IPC分类号： H01S5/028
CPC分类号： H01S5/0281
摘要： A nitride semiconductor laser element includes a nitride semiconductor layer of a first conduction type, an active layer, and a nitride semiconductor layer of a second conduction type that is different from the first conduction type are laminated in that order, a cavity end face formed by the nitride semiconductor layers, and a protective film formed on the cavity end face. The nitride semiconductor layers of the first and second conduction types have layers containing Al, and the active layer has layer containing In. The protective film has a region in which an axial orientation of crystals is the same as that of the cavity end face on the nitride semiconductor layers of the first and second conduction types, and has another region in which an axial orientation of crystals is different from that of the cavity end face on the active layer.
摘要翻译：氮化物半导体激光元件包括依次层叠具有第一导电类型，有源层和与第一导电类型不同的第二导电类型的氮化物半导体层的氮化物半导体层，空腔端面由氮化物半导体层和形成在腔体端面上的保护膜。第一和第二导电类型的氮化物半导体层具有包含Al的层，并且活性层具有包含In的层。保护膜具有其中晶体的轴向取向与第一和第二导电类型的氮化物半导体层上的空腔端面相同的区域，并且具有另一区域，其中晶体的轴向取向不同于活性层上的腔端面。

3. 发明申请

US20080205464A1 NITRIDE SEMICONDUCTOR LASER ELEMENT 有权
标题翻译：氮化物半导体激光元件
公开(公告)号：US20080205464A1
公开(公告)日：2008-08-28
申请号：US12033404
申请日：2008-02-19
申请人： Atsuo MICHIUE , Tomonori MORIZUMI , Hiroaki TAKAHASHI
发明人： Atsuo MICHIUE , Tomonori MORIZUMI , Hiroaki TAKAHASHI
IPC分类号： H01S5/00
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/0267 , H01S5/028 , H01S5/0282 , H01S5/0283 , H01S5/2201 , H01S5/34333 , H01S2304/04
摘要： A nitride semiconductor laser element has a first nitride semiconductor layer, an active layer, a second nitride semiconductor layer, and a first protective film in contact with a cavity end face of the nitride semiconductor layer, wherein the first protective film in contact with at least the active layer of the cavity end face has a region thinner than the maximum thickness of the first protective film.
摘要翻译：氮化物半导体激光元件具有与氮化物半导体层的空腔端面接触的第一氮化物半导体层，有源层，第二氮化物半导体层和第一保护膜，其中，与至少接触的第一保护膜空腔端面的有源层具有比第一保护膜的最大厚度薄的区域。

4. 发明申请

US20080304530A1 NITRIDE SEMICONDUCTOR LASER ELEMENT 有权
标题翻译：氮化物半导体激光元件
公开(公告)号：US20080304530A1
公开(公告)日：2008-12-11
申请号：US12132880
申请日：2008-06-04
申请人： Tomonori MORIZUMI
发明人： Tomonori MORIZUMI
IPC分类号： H01S5/323
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/028 , H01S5/0282 , H01S5/166 , H01S5/22
摘要： A nitride semiconductor laser element comprises; a nitride semiconductor layer that includes a first nitride semiconductor layer, an active layer, and a second nitride semiconductor layer, and that has a cavity with end faces, and a first protective film that is in contact with at least one end face of the cavity, wherein the first protective film has a film structure in which bright and dark parts comprising a region in contact with the active layer and a region in contact with the first and second nitride semiconductor layers are observed under scanning transmission electron microscopy, or the first protective film has a film structure in which the crystallinity at a portion adjacent to the active layer is different from that at portions adjacent to the first and second nitride semiconductor layers.
摘要翻译：氮化物半导体激光元件包括：包括第一氮化物半导体层，有源层和第二氮化物半导体层的氮化物半导体层，并且具有端面的空腔，以及与所述空腔的至少一个端面接触的第一保护膜其中，所述第一保护膜具有膜结构，其中在扫描透射电子显微镜下观察到包括与所述有源层接触的区域的明暗部分和与所述第一和第二氮化物半导体层接触的区域，或所述第一保护膜膜具有膜结构，其中与有源层相邻的部分的结晶度不同于与第一和第二氮化物半导体层相邻的部分处的结晶度。

5. 发明申请

US20120033698A1 NITRIDE SEMICONDUCTOR LASER ELEMENT AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：氮化物半导体激光元件及其制造方法
公开(公告)号：US20120033698A1
公开(公告)日：2012-02-09
申请号：US13194046
申请日：2011-07-29
申请人： Tomonori MORIZUMI
发明人： Tomonori MORIZUMI
IPC分类号： H01S5/343 , H01L33/06
CPC分类号： H01S5/32341 , H01S5/0281 , H01S5/0282 , H01S2301/176
摘要： A nitride semiconductor laser element has: a nitride semiconductor layer having cavity planes at the ends of a waveguide region, an insulating film formed on an upper face of the nitride semiconductor layer so that the ends on the cavity plane side are isolated from cavity planes, and a first film formed from the cavity plane to the upper face of the nitride semiconductor layer, and covered part of the insulating film surface, the first film has a first region that is in contact with the nitride semiconductor and a second region that is in contact with the insulating film, and is formed from AlxGa1-xN (0
摘要翻译：氮化物半导体激光元件具有：在波导区域的端部具有空腔平面的氮化物半导体层，形成在氮化物半导体层的上表面上的绝缘膜，使得空腔平面侧的端部与空腔平面隔离，以及从所述空腔平面到所述氮化物半导体层的上表面形成的第一膜，以及所述绝缘膜表面的被覆部分，所述第一膜具有与所述氮化物半导体接触的第一区域和位于与绝缘膜接触，并且由Al x Ga 1-x N（0

6. 发明申请

US20100248406A1 NITRIDE SEMICONDUCTOR LASER ELEMENT 有权
标题翻译：氮化物半导体激光元件
公开(公告)号：US20100248406A1
公开(公告)日：2010-09-30
申请号：US12814132
申请日：2010-06-11
申请人： Shingo MASUI , Tomonori MORIZUMI
发明人： Shingo MASUI , Tomonori MORIZUMI
IPC分类号： H01L21/20
CPC分类号： H01S5/22 , B82Y20/00 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01S5/0282 , H01S5/2009 , H01S5/2214 , H01S5/3063 , H01S5/34333 , H01S2304/04
摘要： A method is for manufacturing a nitride semiconductor laser element including a substrate, a nitride semiconductor layer that is laminated on the substrate and that has a ridge on its surface, an insulating protective film, and an electrode that is electrically connected with the nitride semiconductor layer. The method includes forming the ridge; forming a monocrystalline first film from the side faces of the ridge to the nitride semiconductor layer on both sides of the ridge; and forming a second film containing polycrystalline or an amorphous substance over the first film thereby forming the insulating protective film.
摘要翻译：一种制造氮化物半导体激光元件的方法，该氮化物半导体激光元件包括：基板，层叠在基板上的氮化物半导体层，其表面具有脊，绝缘保护膜和与氮化物半导体层电连接的电极。该方法包括形成脊; 从脊的侧面到脊的两侧的氮化物半导体层形成单晶第一膜; 以及在所述第一膜上形成含有多晶或非晶物质的第二膜，从而形成所述绝缘保护膜。

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