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1. 发明申请

US20150036914A1 METHOD FOR ESTIMATING SHAPE BEFORE SHRINK AND CD-SEM APPARATUS 有权
标题翻译：在收缩和CD-SEM装置之前估算形状的方法
公开(公告)号：US20150036914A1
公开(公告)日：2015-02-05
申请号：US14239803
申请日：2012-05-24
申请人： Tomoko Sekiguchi , Takeyoshi Ohashi , Junichi Tanaka , Zhaohui Cheng , Ruriko Tsuneta , Hiroki Kawada , Seiko Hitomi
发明人： Tomoko Sekiguchi , Takeyoshi Ohashi , Junichi Tanaka , Zhaohui Cheng , Ruriko Tsuneta , Hiroki Kawada , Seiko Hitomi
IPC分类号： G06K9/46 , G06T7/00
CPC分类号： G06K9/4604 , B82Y10/00 , B82Y40/00 , G01B15/04 , G01N23/22 , G06T7/0004 , H01J37/3174 , H01J2237/221 , H01J2237/226 , H01J2237/2816 , H01J2237/31754 , H01J2237/31796 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： In the present invention, at the time of measuring, using a CD-SEM, a length of a resist that shrinks when irradiated with an electron beam, in order to highly accurately estimate a shape and dimensions of the resist before shrink, a shrink database with respect to various patterns is previously prepared, said shrink database containing cross-sectional shape data obtained prior to electron beam irradiation, a cross-sectional shape data group and a CD-SEM image data group, which are obtained under various electron beam irradiation conditions, and models based on such data and data groups, and a CD-SEM image of a resist pattern to be measured is obtained (S102), then, the CD-SEM image and data in the shrink database are compared with each other (S103), and the shape and dimensions of the pattern before the shrink are estimated and outputted (S104).
摘要翻译：在本发明中，在测量时，使用CD-SEM，当用电子束照射时收缩的抗蚀剂的长度为了在收缩之前高精度地估计抗蚀剂的形状和尺寸，收缩数据库预先准备了各种图案，所述收缩数据库包含在电子束照射之前获得的横截面形状数据，横截面形状数据组和CD-SEM图像数据组，其在各种电子束照射条件下获得，以及基于这样的数据和数据组的模型，并且获得要测量的抗蚀剂图案的CD-SEM图像（S102），然后将CD-SEM图像和收缩数据库中的数据彼此进行比较（S103 ），并且估计并输出收缩前的图案的形状和尺寸（S104）。

2. 发明授权

US09830524B2 Method for estimating shape before shrink and CD-SEM apparatus 有权
公开(公告)号：US09830524B2
公开(公告)日：2017-11-28
申请号：US14239803
申请日：2012-05-24
申请人： Tomoko Sekiguchi , Takeyoshi Ohashi , Junichi Tanaka , Zhaohui Cheng , Ruriko Tsuneta , Hiroki Kawada , Seiko Hitomi
发明人： Tomoko Sekiguchi , Takeyoshi Ohashi , Junichi Tanaka , Zhaohui Cheng , Ruriko Tsuneta , Hiroki Kawada , Seiko Hitomi
IPC分类号： G01N23/22 , G06K9/46 , H01J37/317 , G01B15/04 , B82Y10/00 , B82Y40/00 , G06T7/00 , H01L21/66
CPC分类号： G06K9/4604 , B82Y10/00 , B82Y40/00 , G01B15/04 , G01N23/22 , G06T7/0004 , H01J37/3174 , H01J2237/221 , H01J2237/226 , H01J2237/2816 , H01J2237/31754 , H01J2237/31796 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： In the present invention, at the time of measuring, using a CD-SEM, a length of a resist that shrinks when irradiated with an electron beam, in order to highly accurately estimate a shape and dimensions of the resist before shrink, a shrink database with respect to various patterns is previously prepared, said shrink database containing cross-sectional shape data obtained prior to electron beam irradiation, a cross-sectional shape data group and a CD-SEM image data group, which are obtained under various electron beam irradiation conditions, and models based on such data and data groups, and a CD-SEM image of a resist pattern to be measured is obtained (S102), then, the CD-SEM image and data in the shrink database are compared with each other (S103), and the shape and dimensions of the pattern before the shrink are estimated and outputted (S104).

3. 发明授权

US09123504B2 Semiconductor inspection device and semiconductor inspection method using the same 有权
标题翻译：半导体检查装置及半导体检验方法采用该方法
公开(公告)号：US09123504B2
公开(公告)日：2015-09-01
申请号：US13380526
申请日：2010-06-23
申请人： Atsuko Yamaguchi , Yoshinori Momonoi , Junichi Tanaka , Hiroki Kawada
发明人： Atsuko Yamaguchi , Yoshinori Momonoi , Junichi Tanaka , Hiroki Kawada
IPC分类号： H04N9/47 , H04N7/18 , H01J37/28 , H01J37/244 , H01L21/66 , G06T7/00 , G02B21/36 , G02B21/00 , G06T5/50
CPC分类号： H01J37/28 , G01B2210/56 , G02B21/002 , G02B21/361 , G02B21/365 , G02B21/367 , G06T5/50 , G06T7/0004 , G06T7/0006 , G06T7/0008 , G06T7/001 , G06T2207/10016 , G06T2207/10056 , G06T2207/10061 , G06T2207/20081 , G06T2207/30141 , G06T2207/30148 , H01J37/244 , H01J2237/24578 , H01J2237/24592 , H01J2237/2816 , H01J2237/2817 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： Provided are a semiconductor inspection device and a semiconductor inspection method such that in a specimen image in a single field of view obtained by an electron microscope, it is possible to suppress variations in the edge position measurement error attributable to the materials and structures of the lower layers of measured patterns by a first method, wherein the area in the field of view obtained by electron beam scanning is divided into a plurality of regions on the basis of information regarding the structures and materials of the object to be observed and the electron beam scanning conditions are changed for individual regions (805, 806), a second method, wherein, the image processing conditions are changed for individual regions resulting from division of the obtained images, or a third method, wherein the edge detection conditions are changed for individual regions resulting from the division within the edge inspection regions of the obtained images.
摘要翻译：提供一种半导体检查装置和半导体检查方法，使得在通过电子显微镜获得的单个视场中的样本图像中，可以抑制归因于下部的材料和结构的边缘位置测量误差的变化通过第一方法测量图案层，其中通过电子束扫描获得的视野中的区域基于关于待观察物体的结构和材料的信息以及电子束扫描被分成多个区域对于各个区域（805,806）的条件改变，第二种方法，其中，针对由所获得的图像的划分产生的各个区域改变图像处理条件，或者第三种方法，其中针对各个区域改变边缘检测条件由获得的图像的边缘检查区域内的划分产生。

4. 发明申请

US20120098954A1 SEMICONDUCTOR INSPECTION DEVICE AND SEMICONDUCTOR INSPECTION METHOD USING THE SAME 有权
标题翻译：半导体检测装置和使用其的半导体检查方法
公开(公告)号：US20120098954A1
公开(公告)日：2012-04-26
申请号：US13380526
申请日：2010-06-23
申请人： Atsuko Yamaguchi , Yoshinori Momonoi , Junichi Tanaka , Hiroki Kawada
发明人： Atsuko Yamaguchi , Yoshinori Momonoi , Junichi Tanaka , Hiroki Kawada
IPC分类号： G06K9/00 , H04N7/18
CPC分类号： H01J37/28 , G01B2210/56 , G02B21/002 , G02B21/361 , G02B21/365 , G02B21/367 , G06T5/50 , G06T7/0004 , G06T7/0006 , G06T7/0008 , G06T7/001 , G06T2207/10016 , G06T2207/10056 , G06T2207/10061 , G06T2207/20081 , G06T2207/30141 , G06T2207/30148 , H01J37/244 , H01J2237/24578 , H01J2237/24592 , H01J2237/2816 , H01J2237/2817 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： Provided are a semiconductor inspection device and a semiconductor inspection method such that in a specimen image in a single field of view obtained by an electron microscope, it is possible to suppress variations in the edge position measurement error attributable to the materials and structures of the lower layers of measured patterns by a first method, wherein the area in the field of view obtained by electron beam scanning is divided into a plurality of regions on the basis of information regarding the structures and materials of the object to be observed and the electron beam scanning conditions are changed for individual regions (805, 806), a second method, wherein, the image processing conditions are changed for individual regions resulting from division of the obtained images, or a third method, wherein the edge detection conditions are changed for individual regions resulting from the division within the edge inspection regions of the obtained images.
摘要翻译：提供一种半导体检查装置和半导体检查方法，使得在通过电子显微镜获得的单个视场中的样本图像中，可以抑制归因于下部的材料和结构的边缘位置测量误差的变化通过第一方法测量图案层，其中通过电子束扫描获得的视野中的区域基于关于待观察物体的结构和材料的信息以及电子束扫描被分成多个区域对于各个区域（805,806）的条件改变，第二种方法，其中，针对由所获得的图像的划分产生的各个区域改变图像处理条件，或者第三种方法，其中针对各个区域改变边缘检测条件由获得的图像的边缘检查区域内的划分产生。

5. 发明授权

US07807980B2 Charged particle beam apparatus and methods for capturing images using the same 有权
标题翻译：带电粒子束装置及使用该装置拍摄图像的方法
公开(公告)号：US07807980B2
公开(公告)日：2010-10-05
申请号：US11647348
申请日：2006-12-29
申请人： Chie Shishido , Mayuka Oosaki , Mitsugu Sato , Hiroki Kawada , Tatsuya Maeda
发明人： Chie Shishido , Mayuka Oosaki , Mitsugu Sato , Hiroki Kawada , Tatsuya Maeda
IPC分类号： G21K7/00 , A61N5/00 , G21G5/00
CPC分类号： H01J37/263 , H01J37/265 , H01J37/28 , H01J2237/2826
摘要： The present invention provides a charged particle beam apparatus used to measure micro-dimensions (CD value) of a semiconductor apparatus or the like which captures images for measurement. For the present invention, a sample for calibration, on which a plurality of polyhedral structural objects with known angles on surfaces produced by the crystal anisotropic etching technology are arranged in a viewing field, is used. A beam landing angle at each position within a viewing field is calculated based on geometric deformation on an image of each polyhedral structural object. Beam control parameters for equalizing the beam landing angle at each position within the viewing field are pre-registered. The registered beam control parameters are applied according to the position of the pattern to be measured within the viewing field when performing dimensional measurement. Accordingly, the present invention provides methods for reducing the variation in the CD value caused by the variation in the electron beam landing angle with respect to the sample with an equal beam landing angle and methods for reducing the instrumental error caused by the difference in the electron beam landing angle between apparatuses.
摘要翻译：本发明提供一种用于测量捕获用于测量的图像的半导体装置等的微尺寸（CD值）的带电粒子束装置。对于本发明，使用用于校准的样品，其上在视场中排列有通过晶体各向异性蚀刻技术产生的表面上具有已知角度的多个多面体结构物体。基于每个多面体结构物体的图像上的几何变形来计算视野内的每个位置处的束着陆角。用于均衡视场内每个位置的束着陆角的光束控制参数被预先注册。当进行尺寸测量时，根据待测图案的位置在观察区域中应用登记的光束控制参数。因此，本发明提供了减少相对于具有相同束着陆角的样品的电子束着角的变化引起的CD值的变化的方法，以及用于减少由电子差异引起的仪器误差的方法设备之间的束着陆角度。

6. 发明申请

US20100133426A1 Sample and method for evaluating resolution of scanning electron microscope, and electron scanning microscope 有权
标题翻译：扫描电子显微镜和电子扫描显微镜的分辨率评估样本和方法
公开(公告)号：US20100133426A1
公开(公告)日：2010-06-03
申请号：US12588517
申请日：2009-10-19
申请人： Mayuka Oosaki , Chie Shishido , Maki Tanaka , Hiroki Kawada
发明人： Mayuka Oosaki , Chie Shishido , Maki Tanaka , Hiroki Kawada
IPC分类号： G01D18/00 , G01N23/00
CPC分类号： G01N23/225 , H01J2237/2823
摘要： A method of evaluating a resolution of a scanning electron microscope includes picking up a first image of a concave and convex pattern formed on a surface of a sample utilizing a first scanning electron microscope, picking up a second image of the concave and convex pattern on the sample utilizing a second scanning electron microscope, respectively processing the first image and the second image in order to evaluate unevenness in resolution between the first scanning electron microscope and the second scanning electron microscope, and determining whether a height of the concave and convex pattern as measured from a bottom thereof is sufficient so that no affection by a secondary electron emitted from the bottom of the concave and convex pattern is exhibited.
摘要翻译：评价扫描型电子显微镜的分辨率的方法包括利用第一扫描电子显微镜拾取形成在样品表面上的凹凸图案的第一图像，在第二图像上拾取凹凸图案的第二图像分别处理第一图像和第二图像以评估第一扫描电子显微镜和第二扫描电子显微镜之间的分辨率的不均匀性，以及确定测量的凹凸图案的高度是否为第二扫描电子显微镜从底部开始就足够了，从而不会发生由凹凸图案的底部发射的二次电子的影响。

7. 发明授权

US07619751B2 High-accuracy pattern shape evaluating method and apparatus 有权
标题翻译：高精度图案形状评估方法及装置
公开(公告)号：US07619751B2
公开(公告)日：2009-11-17
申请号：US12125444
申请日：2008-05-22
申请人： Atsuko Yamaguchi , Hiroshi Fukuda , Osamu Komuro , Hiroki Kawada
发明人： Atsuko Yamaguchi , Hiroshi Fukuda , Osamu Komuro , Hiroki Kawada
IPC分类号： G01B11/24 , G01N23/00 , G06K9/46
CPC分类号： G01N23/2251
摘要： A quantity (or dispersion value) of a distribution of edge position due to random noise is expected to be reduced statistically to 1/N when N edge position data items are averaged. Using this property, the single page image is averaged in a vertical direction with various values of parameter S, and then the edge roughness index is calculated. The S-dependence of the edge roughness index is analyzed and a term of a dispersion value directly proportional to 1/S is determined as being due to noise.
摘要翻译：当N个边缘位置数据项被平均时，由于随机噪声导致的边缘位置分布的数量（或色散值）预期在统计上降低到1 / N。使用该属性，将单页图像在垂直方向上与参数S的各种值进行平均，然后计算边缘粗糙度指数。分析边缘粗糙度指数的S依赖性，并将与1 / S成正比的色散值的项确定为由噪声引起的。

8. 发明授权

US07511272B2 Method for controlling charged particle beam, and charged particle beam apparatus 有权
标题翻译：用于控制带电粒子束的方法和带电粒子束装置
公开(公告)号：US07511272B2
公开(公告)日：2009-03-31
申请号：US11607928
申请日：2006-12-04
申请人： Hiroki Kawada , Ryo Nakagaki
发明人： Hiroki Kawada , Ryo Nakagaki
IPC分类号： G01N23/00 , G21K7/00 , A61N5/00
CPC分类号： G01N23/225 , H01J37/28 , H01J2237/216
摘要： According to the invention, to achieve the above objective, there is provided a charged particle beam apparatus that creates a first image by irradiating a charged particle beam on a sample to scan a first pattern of the sample, controls on the basis of the first image the focus of the charged particle beam and the brightness and/or contrast of the image, and irradiates the charged particle beam to correctly scan a second pattern different from the first pattern by using the control conditions used to control the focus of the charged particle beam and the brightness and/or contrast of the image.
摘要翻译：根据本发明，为了实现上述目的，提供了一种带电粒子束装置，其通过在样本上照射带电粒子束来扫描样品的第一图案来产生第一图像，基于第一图像进行控制带电粒子束的焦点以及图像的亮度和/或对比度，并且通过使用用于控制带电粒子束的焦点的控制条件照射带电粒子束以正确地扫描与第一图案不同的第二图案以及图像的亮度和/或对比度。

9. 发明申请

US20080179517A1 Sample dimension measuring method and scanning electron microscope 有权
标题翻译：样品尺寸测量方法和扫描电子显微镜
公开(公告)号：US20080179517A1
公开(公告)日：2008-07-31
申请号：US11902088
申请日：2007-09-19
申请人： Hiroki Kawada , Takashi IIzumi , Tadashi Otaka
发明人： Hiroki Kawada , Takashi IIzumi , Tadashi Otaka
IPC分类号： G01N23/00 , G01B5/28
CPC分类号： H01J37/28 , B82Y15/00 , H01J2237/2817
摘要： An object of the present invention is to suppress measurement errors caused by the fact that the shrink amount due to scan of an electron beam differs pattern by pattern.To accomplish this object, according to the invention, functions indicative of a process of change of pattern dimension when the electron beam is irradiated on a sample are prepared in respect of the kinds of sample patterns, and dimension values of a particular pattern measured by scanning the electron beam on the particular pattern are fitted to a function prepared for the particular pattern to calculate a dimension of the particular pattern before it changes.
摘要翻译：本发明的目的是抑制由于扫描电子束的收缩量不同于图案的事实而引起的测量误差。为了实现该目的，根据本发明，就样品图案的种类和通过扫描测量的特定图案的尺寸值准备指示电子束照射在样品上时图形尺寸变化过程的功能特定图案上的电子束被拟合到为特定图案准备的功能，以在特定图案改变之前计算特定图案的尺寸。

10. 发明申请

US20070242885A1 High-accuracy pattern shape evaluating method and apparatus 有权
公开(公告)号：US20070242885A1
公开(公告)日：2007-10-18
申请号：US11808627
申请日：2007-06-12
申请人： Atsuko Yamaguchi , Hiroshi Fukuda , Osamu Komuro , Hiroki Kawada
发明人： Atsuko Yamaguchi , Hiroshi Fukuda , Osamu Komuro , Hiroki Kawada
IPC分类号： G06K9/48
CPC分类号： G01N23/2251
摘要： A quantity (or dispersion value) of a distribution of edge position due to random noise is expected to be reduced statistically to 1/N when N edge position data items are averaged. Using this property, the single page image is averaged in a vertical direction with various values of parameter S, and then the edge roughness index is calculated. The S-dependence of the edge roughness index is analyzed and a term of a dispersion value directly proportional to 1/S is determined as being due to noise.

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