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1. 发明授权

US08546178B2 Semiconductor light emitting device and method for manufacturing semiconductor light emitting device 有权
标题翻译：半导体发光器件及半导体发光器件的制造方法
公开(公告)号：US08546178B2
公开(公告)日：2013-10-01
申请号：US13180889
申请日：2011-07-12
申请人： Tomoko Morioka , Takayoshi Fujii , Toshitake Kitagawa , Kazufumi Shiozawa , Taisuke Sato , Hidefumi Yasuda , Yuko Kato
发明人： Tomoko Morioka , Takayoshi Fujii , Toshitake Kitagawa , Kazufumi Shiozawa , Taisuke Sato , Hidefumi Yasuda , Yuko Kato
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/38
摘要： According to one embodiment, a semiconductor light emitting device includes a substrate, a first semiconductor layer, a light emitting layer, a second semiconductor layer, and a translucent electrode. The substrate includes a first region provided along periphery of a first major surface and a second region provided on center side of the first major surface as viewed from the first region. The first semiconductor layer is provided on the first major surface of the substrate. The light emitting layer is provided on the first semiconductor layer. The second semiconductor layer is provided on the light emitting layer. The translucent electrode is provided on the second semiconductor layer. A reflectance in the second region is higher than a reflectance in the first region.
摘要翻译：根据一个实施例，半导体发光器件包括衬底，第一半导体层，发光层，第二半导体层和透光性电极。基板包括沿着第一主表面的周边设置的第一区域和设置在从第一区域观察的第一主表面的中心侧的第二区域。第一半导体层设置在基板的第一主表面上。发光层设置在第一半导体层上。第二半导体层设置在发光层上。半透明电极设置在第二半导体层上。第二区域的反射率高于第一区域的反射率。

2. 发明申请

US20120012874A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光装置及制造半导体发光装置的方法
公开(公告)号：US20120012874A1
公开(公告)日：2012-01-19
申请号：US13180889
申请日：2011-07-12
申请人： Tomoko MORIOKA , Takayoshi Fujii , Toshitake Kitagawa , Kazufumi Shiozawa , Taisuke Sato , Hidefumi Yasuda , Yuko Kato
发明人： Tomoko MORIOKA , Takayoshi Fujii , Toshitake Kitagawa , Kazufumi Shiozawa , Taisuke Sato , Hidefumi Yasuda , Yuko Kato
IPC分类号： H01L33/60 , H01L33/20
CPC分类号： H01L33/20 , H01L33/38
摘要： According to one embodiment, a semiconductor light emitting device includes a substrate, a first semiconductor layer, a light emitting layer, a second semiconductor layer, and a translucent electrode. The substrate includes a first region provided along periphery of a first major surface and a second region provided on center side of the first major surface as viewed from the first region. The first semiconductor layer is provided on the first major surface of the substrate. The light emitting layer is provided on the first semiconductor layer. The second semiconductor layer is provided on the light emitting layer. The translucent electrode is provided on the second semiconductor layer. A reflectance in the second region is higher than a reflectance in the first region.
摘要翻译：根据一个实施例，半导体发光器件包括衬底，第一半导体层，发光层，第二半导体层和透光性电极。基板包括沿着第一主表面的周边设置的第一区域和设置在从第一区域观察的第一主表面的中心侧的第二区域。第一半导体层设置在基板的第一主表面上。发光层设置在第一半导体层上。第二半导体层设置在发光层上。半透明电极设置在第二半导体层上。第二区域的反射率高于第一区域的反射率。

3. 发明申请

US20110215370A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20110215370A1
公开(公告)日：2011-09-08
申请号：US12873753
申请日：2010-09-01
申请人： Taisuke Sato , Toshiyuki Oka , Koichi Tachibana , Shinya Nunoue , Kazufumi Shiozawa , Takayoshi Fujii
发明人： Taisuke Sato , Toshiyuki Oka , Koichi Tachibana , Shinya Nunoue , Kazufumi Shiozawa , Takayoshi Fujii
IPC分类号： H01L33/26
CPC分类号： H01L33/20 , H01L33/46
摘要： According to one embodiment, a semiconductor light-emitting device having high light extraction efficiency is provided. The semiconductor light-emitting device includes a light transmissive substrate; a nitride semiconductor layer of a first conduction type formed on or above a top face side of the light transmissive substrate; an active layer made of nitride semiconductor formed on a top face of the nitride semiconductor layer of the first conduction type; a nitride semiconductor layer of a second conduction type formed on a top face of the active layer; a dielectric layer formed on a bottom face of the light transmissive substrate and having a refractive index lower than that of the light transmissive substrate; and a metal layer formed on a bottom face of the dielectric layer. And an interface between the light transmissive substrate and the dielectric layer is a uneven face, and an interface between the dielectric layer and the metal layer is a flat face.
摘要翻译：根据一个实施例，提供了具有高光提取效率的半导体发光器件。半导体发光器件包括透光衬底; 形成在所述透光基板的顶面侧上方或上方的第一导电型氮化物半导体层; 形成在第一导电型氮化物半导体层的顶面上的由氮化物半导体制成的有源层; 形成在有源层的顶面上的第二导电类型的氮化物半导体层; 介电层，其形成在所述透光性基板的底面上，折射率低于所述透光性基板的折射率; 以及形成在电介质层的底面上的金属层。并且透光基板和电介质层之间的界面是不平坦的面，并且介电层和金属层之间的界面是平坦的面。

4. 发明授权

US08242532B2 Semiconductor light-emitting device 有权
标题翻译：半导体发光装置
公开(公告)号：US08242532B2
公开(公告)日：2012-08-14
申请号：US12873753
申请日：2010-09-01
申请人： Taisuke Sato , Toshiyuki Oka , Koichi Tachibana , Shinya Nunoue , Kazufumi Shiozawa , Takayoshi Fujii
发明人： Taisuke Sato , Toshiyuki Oka , Koichi Tachibana , Shinya Nunoue , Kazufumi Shiozawa , Takayoshi Fujii
IPC分类号： H01L33/26
CPC分类号： H01L33/20 , H01L33/46
摘要： According to one embodiment, a semiconductor light-emitting device having high light extraction efficiency is provided. The semiconductor light-emitting device includes a light transmissive substrate; a nitride semiconductor layer of a first conduction type formed on or above a top face side of the light transmissive substrate; an active layer made of nitride semiconductor formed on a top face of the nitride semiconductor layer of the first conduction type; a nitride semiconductor layer of a second conduction type formed on a top face of the active layer; a dielectric layer formed on a bottom face of the light transmissive substrate and having a refractive index lower than that of the light transmissive substrate; and a metal layer formed on a bottom face of the dielectric layer. And an interface between the light transmissive substrate and the dielectric layer is a uneven face, and an interface between the dielectric layer and the metal layer is a flat face.
摘要翻译：根据一个实施例，提供了具有高光提取效率的半导体发光器件。半导体发光器件包括透光衬底; 形成在所述透光基板的顶面侧上方或上方的第一导电型氮化物半导体层; 形成在第一导电型氮化物半导体层的顶面上的由氮化物半导体制成的有源层; 形成在有源层的顶面上的第二导电类型的氮化物半导体层; 介电层，其形成在所述透光性基板的底面上，折射率低于所述透光性基板的折射率; 以及形成在电介质层的底面上的金属层。并且透光基板和电介质层之间的界面是不平坦的面，并且介电层和金属层之间的界面是平坦的面。

5. 发明授权

US08188510B2 Semiconductor light-emitting device 有权
公开(公告)号：US08188510B2
公开(公告)日：2012-05-29
申请号：US12873753
申请日：2010-09-01
申请人： Taisuke Sato , Toshiyuki Oka , Koichi Tachibana , Shinya Nunoue , Kazufumi Shiozawa , Takayoshi Fujii
发明人： Taisuke Sato , Toshiyuki Oka , Koichi Tachibana , Shinya Nunoue , Kazufumi Shiozawa , Takayoshi Fujii
IPC分类号： H01L33/26
摘要： According to one embodiment, a semiconductor light-emitting device having high light extraction efficiency is provided. The semiconductor light-emitting device includes a light transmissive substrate; a nitride semiconductor layer of a first conduction type formed on or above a top face side of the light transmissive substrate; an active layer made of nitride semiconductor formed on a top face of the nitride semiconductor layer of the first conduction type; a nitride semiconductor layer of a second conduction type formed on a top face of the active layer; a dielectric layer formed on a bottom face of the light transmissive substrate and having a refractive index lower than that of the light transmissive substrate; and a metal layer formed on a bottom face of the dielectric layer. And an interface between the light transmissive substrate and the dielectric layer is a uneven face, and an interface between the dielectric layer and the metal layer is a flat face.

6. 发明授权

US09412910B2 Semiconductor light emitting device and method for manufacturing same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US09412910B2
公开(公告)日：2016-08-09
申请号：US13030453
申请日：2011-02-18
申请人： Toshihide Ito , Taisuke Sato , Toshiyuki Oka , Shinya Nunoue
发明人： Toshihide Ito , Taisuke Sato , Toshiyuki Oka , Shinya Nunoue
IPC分类号： H01L33/42 , H01L33/44
CPC分类号： H01L33/44 , H01L33/42 , H01L2933/0016
摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a light emitting portion, a first transparent conductive layer, and a second transparent conductive layer. The light emitting portion is provided between the first and second semiconductor layers. The second semiconductor layer is disposed between the first transparent conductive layer and the light emitting portion. The first transparent conductive layer includes oxygen. The second transparent conductive layer is provided between the second semiconductor layer and the first transparent conductive layer. The second transparent conductive layer has a refractive index higher than a refractive index of the first transparent conductive layer, and includes oxygen at a concentration higher than a concentration of oxygen included in the first transparent conductive layer.
摘要翻译：根据一个实施例，半导体发光器件包括第一导电类型的第一半导体层，第二导电类型的第二半导体层，发光部分，第一透明导电层和第二透明导电层。发光部分设置在第一和第二半导体层之间。第二半导体层设置在第一透明导电层和发光部之间。第一透明导电层包括氧。第二透明导电层设置在第二半导体层和第一透明导电层之间。第二透明导电层的折射率高于第一透明导电层的折射率，并且包括浓度高于第一透明导电层中包含的氧浓度的氧。

7. 发明授权

US08766297B2 Semiconductor light emitting device and method for manufacturing same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US08766297B2
公开(公告)日：2014-07-01
申请号：US13030264
申请日：2011-02-18
申请人： Toshihide Ito , Toshiyuki Oka , Kotaro Zaima , Taisuke Sato , Shinya Nunoue
发明人： Toshihide Ito , Toshiyuki Oka , Kotaro Zaima , Taisuke Sato , Shinya Nunoue
IPC分类号： H01L33/36 , H01L33/42
CPC分类号： H01L33/145 , H01L33/405 , H01L33/42
摘要： According to one embodiment, a semiconductor light emitting device includes a stacked structural body, first and second electrodes, a high resistance layer and a transparent conductive layer. The stacked structural body includes first and second semiconductor layers and a light emitting layer. The first semiconductor layer is disposed between the first electrode and the second semiconductor layer. The second semiconductor layer is disposed between the second electrode and the first semiconductor layer. The second electrode has reflectivity with respect to luminescent light. The high resistance layer is in contact with the second semiconductor layer between the second semiconductor layer and the second electrode and includes a portion overlapping with the first electrode. The transparent conductive layer is in contact with the second semiconductor layer between the second semiconductor layer and the second electrode. The transparent conductive layer has a resistance lower than a resistance of the high resistance layer.
摘要翻译：根据一个实施例，半导体发光器件包括堆叠结构体，第一和第二电极，高电阻层和透明导电层。堆叠结构体包括第一和第二半导体层和发光层。第一半导体层设置在第一电极和第二半导体层之间。第二半导体层设置在第二电极和第一半导体层之间。第二电极具有相对于发光的反射率。高电阻层与第二半导体层与第二电极之间的第二半导体层接触并且包括与第一电极重叠的部分。透明导电层与第二半导体层在第二半导体层和第二电极之间接触。透明导电层的电阻低于高电阻层的电阻。

8. 发明授权

US08525194B2 Nitride semiconductor device, nitride semiconductor wafer and method for manufacturing nitride semiconductor layer 失效
公开(公告)号：US08525194B2
公开(公告)日：2013-09-03
申请号：US13222561
申请日：2011-08-31
申请人： Tomonari Shioda , Hung Hung , Jongil Hwang , Taisuke Sato , Naoharu Sugiyama , Shinya Nunoue
发明人： Tomonari Shioda , Hung Hung , Jongil Hwang , Taisuke Sato , Naoharu Sugiyama , Shinya Nunoue
IPC分类号： H01L29/201 , H01L33/00
CPC分类号： H01L33/32 , H01L21/02381 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L21/02658 , H01L29/2003 , H01L33/007 , H01L33/12
摘要： According to one embodiment, a nitride semiconductor device includes a foundation layer and a functional layer. The foundation layer is formed on an Al-containing nitride semiconductor layer formed on a silicon substrate. The foundation layer has a thickness not less than 1 micrometer and including GaN. The functional layer is provided on the foundation layer. The functional layer includes a first semiconductor layer. The first semiconductor layer has an impurity concentration higher than an impurity concentration in the foundation layer and includes GaN of a first conductivity type.

9. 发明授权

US06740085B2 Heating treatment system 有权
标题翻译：加热处理系统
公开(公告)号：US06740085B2
公开(公告)日：2004-05-25
申请号：US10014698
申请日：2001-11-13
申请人： Norihiko Hareyama , Taisuke Sato
发明人： Norihiko Hareyama , Taisuke Sato
IPC分类号： A61B1818
CPC分类号： A61B18/085 , A61B2017/00084 , A61B2017/00119 , A61B2017/00199 , A61B2017/00973
摘要： A heating treatment system consists mainly of coagulating/incising forceps in which a plurality of heating elements are incorporated, and a main unit that feeds power to the heating elements incorporated in the coagulating/incising forceps and that drives and controls the heating elements. The main unit can be connected to coagulating/incising forceps in which up to four heating elements are incorporated. The main unit includes element temperature measurement/output control units and temperature setting units which are associated with four channels allocated to the heating elements. A control unit controls the element temperature measurement/output control units and temperature setting units. The control unit judges the type of connected forceps by referencing data stored in advance in a memory using information of the type of forceps received from the coagulating/incising forceps, and controls power feed to the heating elements.
摘要翻译：加热处理系统主要由凝结/切割镊子组成，其中结合有多个加热元件，以及主体，其将功率馈送到结合在凝结/切割钳中的加热元件，并驱动和控制加热元件。主单元可以连接到凝结/切割钳，其中最多加入四个加热元件。主单元包括元件温度测量/输出控制单元和与分配给加热元件的四个通道相关联的温度设定单元。控制单元控制元件温度测量/输出控制单元和温度设置单元。控制单元通过使用从凝固/切割钳接收到的钳子的类型的信息参考存储在存储器中的数据来判断连接的钳子的类型，并且控制对加热元件的供电。

10. 发明授权

US5873316A Vertically fully rotating hook with needle guiding surface 失效
标题翻译：垂直完全旋转钩子与针引导面
公开(公告)号：US5873316A
公开(公告)日：1999-02-23
申请号：US954126
申请日：1997-10-20
申请人： Taisuke Sato
发明人： Taisuke Sato
IPC分类号： D05B57/14 , D05B55/06 , D05B57/26
CPC分类号： D05B57/14
摘要： A wall of an inner loop taker includes a guiding surface, a first vertical surface which extends continuously to an inward end of the guiding surface in a radial direction of the inner loop taker and is parallel to an axial line of a needle, and a second vertical surface which is formed on the inward side of the first vertical surface in the radial direction of the inner loop taker but closer to the axial line of the needle than the first vertical surface and which is parallel to the axial line of the needle. A first angle between a straight line which links the inward end and an outward end of the second vertical surface in the radial direction of the inner loop taker and the axial line is smaller than a second angle between a needle tip guiding surface of the needle and the axial line, while a first length of the first vertical surface is equal to or smaller than a distance along the axial line between a bottom end portion of an inner peripheral surface of an eye of the needle and a needle tip of the needle.
摘要翻译：内环接收器的壁包括引导表面，第一垂直表面，其沿着内环接收器的径向方向连续延伸到引导表面的内端，并且平行于针的轴线，第二垂直表面所述垂直面形成在所述第一垂直面的内侧接纳器的径向内侧且比所述第一垂直面更靠近所述针的轴线且与所述针的轴线平行。在内圈接收器的径向连接内端和第二垂直面的外端的直线与轴线之间的第一角度小于针的针尖引导面和第二角度轴线，而第一垂直面的第一长度等于或小于沿针眼的内周面的底端部与针的针尖之间的轴线的距离。

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