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1. 发明授权

US07782575B2 Magnetoresistive element having free layer, pinned layer, and spacer layer disposed therebetween, the spacer layer including semiconductor layer 有权
标题翻译：具有自由层，钉扎层和间隔层的磁阻元件设置在它们之间，间隔层包括半导体层
公开(公告)号：US07782575B2
公开(公告)日：2010-08-24
申请号：US11698180
申请日：2007-01-26
申请人： Yoshihiro Tsuchiya , Kei Hirata , Tomohito Mizuno , Koji Shimazawa
发明人： Yoshihiro Tsuchiya , Kei Hirata , Tomohito Mizuno , Koji Shimazawa
IPC分类号： G11B5/39
CPC分类号： G11B5/59683 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3909 , G11B5/3929 , G11B2005/3996
摘要： An MR element includes: a free layer having a direction of magnetization that changes in response to a signal magnetic field; a pinned layer having a fixed direction of magnetization; and a spacer layer disposed between these layers. The spacer layer includes a first nonmagnetic metal layer and a second nonmagnetic metal layer each made of a nonmagnetic metal material, and a semiconductor layer that is made of a material containing an oxide semiconductor and that is disposed between the first and second nonmagnetic metal layers. The MR element has a resistance-area product within a range of 0.1 to 0.3Ω·μm2, and the spacer layer has a conductivity within a range of 133 to 432 S/cm.
摘要翻译： MR元件包括：具有响应于信号磁场而改变的磁化方向的自由层; 具有固定的磁化方向的钉扎层; 以及设置在这些层之间的间隔层。间隔层包括由非磁性金属材料制成的第一非磁性金属层和第二非磁性金属层，以及由含有氧化物半导体的材料制成并且设置在第一和第二非磁性金属层之间的半导体层。 MR元件的电阻面积为0.1〜0.3Ω·Ω·cm 2，间隔层的导电率为133〜432S / cm。

2. 发明授权

US07672092B2 Method for manufacturing magnetic field detecting element, utilizing diffusion of metal 有权
标题翻译：利用金属扩散制造磁场检测元件的方法
公开(公告)号：US07672092B2
公开(公告)日：2010-03-02
申请号：US11708537
申请日：2007-02-21
申请人： Yoshihiro Tsuchiya , Tomohito Mizuno , Kei Hirata , Keita Kawamori , Koji Shimazawa
发明人： Yoshihiro Tsuchiya , Tomohito Mizuno , Kei Hirata , Keita Kawamori , Koji Shimazawa
IPC分类号： G11B5/127
CPC分类号： G11B5/3906 , B82Y25/00 , G01R33/093 , G11B5/3163 , H01L43/12 , Y10T428/1121
摘要： A method for manufacturing a magnetic field detecting element has the steps of: forming stacked layers by sequentially depositing a pinned layer, a spacer layer, a spacer adjoining layer which is adjacent to the spacer layer, a metal layer, and a Heusler alloy layer in this order, such that the layers adjoin each other; and heat treating the stacked layers in order to form the free layer out of the spacer adjoining layer, the metal layer, and the Heusler alloy layer. The spacer adjoining layer is mainly formed of cobalt and iron, and has a body centered cubic structure, and the metal layer is formed of an element selected from the group consisting of silver, gold, copper, palladium, or platinum, or is formed of an alloy thereof.
摘要翻译：一种制造磁场检测元件的方法，其特征在于：通过依次沉积与间隔层相邻的钉扎层，间隔层，间隔物邻接层，金属层和Heusler合金层，形成堆叠层这个顺序，使得这些层彼此相邻; 并且对层叠层进行热处理，以便在间隔物邻接层，金属层和Heusler合金层之间形成自由层。间隔物邻接层主要由钴和铁形成，并且具有体心立方结构，金属层由选自银，金，铜，钯或铂的元素形成，或由其合金。

3. 发明授权

US07672085B2 CPP type magneto-resistive effect device having a semiconductor oxide spacer layer and magnetic disk system 有权
标题翻译：具有半导体氧化物间隔层和磁盘系统的CPP型磁阻效应器件
公开(公告)号：US07672085B2
公开(公告)日：2010-03-02
申请号：US11626562
申请日：2007-01-24
申请人： Shinji Hara , Kei Hirata , Koji Shimazawa , Yoshihiro Tsuchiya , Tomohito Mizuno
发明人： Shinji Hara , Kei Hirata , Koji Shimazawa , Yoshihiro Tsuchiya , Tomohito Mizuno
IPC分类号： G11B5/39
CPC分类号： G11B5/4826 , B82Y10/00 , B82Y25/00 , G11B5/3906 , G11B2005/3996
摘要： The invention provides a giant magneto-resistive effect device (CPP-GMR device) having a CPP (current perpendicular to plane) structure comprising a spacer layer, and a fixed magnetized layer and a free layer stacked one upon another with said spacer layer interleaved between them, with a sense current applied in a stacking direction, wherein the spacer layer comprises a first and a second nonmagnetic metal layer, each formed of a nonmagnetic metal material, and a semiconductor oxide layer interleaved between the first and the second nonmagnetic metal layer, wherein the semiconductor oxide layer that forms a part of the spacer layer is made of indium oxide (In2O3), or the semiconductor oxide layer contains indium oxide (In2O3) as its main component, and an oxide containing a tetravalent cation of SnO2 is contained in the indium oxide that is the main component. The semiconductor oxide layer that forms a part of the spacer layer can thus be made thick while the device has a low area resistivity as desired, ensuring much more favorable advantages: ever higher MR performance, prevention of device area resistivity variations, and much improved reliability of film characteristics.
摘要翻译：本发明提供一种具有CPP（垂直于平面的电流）结构的巨磁阻效应器件（CPP-GMR器件），其包括间隔层，以及固定磁化层和自由层，所述固定磁化层和自由层彼此层叠，它们具有沿层叠方向施加的感测电流，其中间隔层包括由非磁性金属材料形成的第一和第二非磁性金属层和交错在第一和第二非磁性金属层之间的半导体氧化物层，其中形成间隔层的一部分的半导体氧化物层由氧化铟（In 2 O 3）制成，或者半导体氧化物层包含氧化铟（In 2 O 3）作为其主要成分，并且包含含有SnO 4的四价阳离子的氧化物作为主要成分的氧化铟。因此，形成间隔层的一部分的半导体氧化物层可以制成厚度，同时器件根据需要具有低的面积电阻率，确保更有利的优点：越来越高的MR性能，防止器件面积电阻率变化和大大提高的可靠性的电影特色。

4. 发明授权

US08472150B2 Magneto-resistive effect device and magnetic disk system 有权
标题翻译：磁阻效应器和磁盘系统
公开(公告)号：US08472150B2
公开(公告)日：2013-06-25
申请号：US11968911
申请日：2008-01-03
申请人： Yoshihiro Tsuchiya , Tomohito Mizuno , Kei Hirata , Koji Shimazawa , Shinji Hara
发明人： Yoshihiro Tsuchiya , Tomohito Mizuno , Kei Hirata , Koji Shimazawa , Shinji Hara
IPC分类号： G11B5/33
CPC分类号： G01R33/093 , B82Y10/00 , B82Y25/00 , G11B5/3906 , G11B5/3993 , G11B2005/3996 , H01F10/3259 , H01F10/3272 , H01L43/10
摘要： A giant magneto-resistive effect device (CPP-GMR device) having the CPP (current perpendicular to plane) structure comprising a spacer layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked one upon another with the spacer layer interposed between them, with a sense current applied in a stacking direction, wherein the spacer layer comprises a first nonmagnetic metal layer and a second nonmagnetic metal layer, each made of a nonmagnetic metal material, and a semiconductor oxide layer interposed between the first nonmagnetic metal layer and the second nonmagnetic metal layer, the semiconductor oxide layer that forms a part of the spacer layer contains zinc oxide as its main component wherein the main component zinc oxide contains an additive metal, and the additive metal is less likely to be oxidized than zinc.
摘要翻译：具有包括间隔层的CPP（垂直于平面的电流）结构的巨磁阻效应器件（CPP-GMR器件），以及间隔层彼此叠置的第一铁磁层和第二铁磁层，其中所述间隔层包括由非磁性金属材料制成的第一非磁性金属层和第二非磁性金属层，以及插入在所述第一非磁性金属层和所述第二非磁性金属层之间的半导体氧化物层非磁性金属层，形成间隔层的一部分的半导体氧化物层含有氧化锌作为主要成分，其中主要成分氧化锌含有添加金属，添加金属不太可能被氧化成锌。

5. 发明授权

US07804667B2 Magnetoresistive element with a Heusler alloy layer that has a region in which an additive element changes in concentration 有权
标题翻译：具有Heusler合金层的磁阻元件，其具有添加元素浓度变化的区域
公开(公告)号：US07804667B2
公开(公告)日：2010-09-28
申请号：US11725476
申请日：2007-03-20
申请人： Kei Hirata , Yoshihiro Tsuchiya , Tomohito Mizuno , Koji Shimazawa
发明人： Kei Hirata , Yoshihiro Tsuchiya , Tomohito Mizuno , Koji Shimazawa
IPC分类号： G11B5/39
CPC分类号： B82Y10/00 , B82Y25/00 , G11B5/3929 , G11B2005/3996
摘要： An MR element incorporates a nonmagnetic conductive layer, and a pinned layer and a free layer that are disposed to sandwich the nonmagnetic conductive layer. Each of the pinned layer and the free layer includes a Heusler alloy layer. The Heusler alloy layer contains a Heusler alloy in which atoms of a magnetic metallic element are placed at body-centered positions of unit cells, and an additive element that is a nonmagnetic metallic element that does not constitute the Heusler alloy. At least one of the pinned layer and the free layer includes a region in which the concentration of the additive element increases as the distance from the nonmagnetic conductive layer decreases, the region being adjacent to the nonmagnetic conductive layer.
摘要翻译： MR元件包括非磁性导电层，以及设置成夹持非磁性导电层的被钉扎层和自由层。每个被钉扎层和自由层包括Heusler合金层。 Heusler合金层包含Heusler合金，其中磁性金属元素的原子被放置在单元电池的体中心位置，而添加元素是不构成Heusler合金的非磁性金属元素。被钉扎层和自由层中的至少一个包括随着距离非磁性导电层的距离减小的添加元素的浓度增加的区域，该区域与非磁性导电层相邻。

6. 发明授权

US07764470B2 Magneto-resistance effect element and thin-film magnetic head having non-magnetic spacer layer composed of one semiconductor layer and two metal layers 有权
标题翻译：磁阻效应元件和具有由一个半导体层和两个金属层组成的非磁性间隔层的薄膜磁头
公开(公告)号：US07764470B2
公开(公告)日：2010-07-27
申请号：US11682421
申请日：2007-03-06
申请人： Tomohito Mizuno , Kei Hirata , Yoshihiro Tsuchiya , Koji Shimazawa
发明人： Tomohito Mizuno , Kei Hirata , Yoshihiro Tsuchiya , Koji Shimazawa
IPC分类号： G11B5/33
CPC分类号： G11B5/59683
摘要： A magneto-resistance effect element used for a thin film magnetic head is configured by a buffer layer, an anti-ferromagnetic layer, a pinned layer, a spacer layer, a free layer, and a cap layer, which are laminated in this order, and a sense current flows through the element in a direction orthogonal to the layer surface, via a lower shield layer and a upper shield layer. The pinned layer comprises an outer layer in which a magnetization direction is fixed, a non-magnetic intermediate layer, and an inner layer which is a ferromagnetic layer. The spacer layer comprises a first and second non-magnetic metal layer, and a semiconductor layer. The first and second non-magnetic metal layer and comprise CuPt films having a thickness of more than 0 nm but no more than 2.0 nm, and the Pt content ranges from a minimum of 5 to a maximum of 25 at %.
摘要翻译：用于薄膜磁头的磁阻效应元件由依次层叠的缓冲层，反铁磁层，被钉扎层，间隔层，自由层和盖层构成，并且感测电流经由下屏蔽层和上屏蔽层沿着与层表面正交的方向流过元件。被钉扎层包括其中磁化方向固定的外层，非磁性中间层和作为铁磁层的内层。间隔层包括第一和第二非磁性金属层和半导体层。第一和第二非磁性金属层并且包括厚度大于0nm但不超过2.0nm的CuPt膜，并且Pt含量最小为5至最大为25at％。

7. 发明授权

US07895731B2 Method for manufacturing magnetic field detecting element utilizing diffusion and migration of silver 有权
标题翻译：利用银的扩散和迁移制造磁场检测元件的方法
公开(公告)号：US07895731B2
公开(公告)日：2011-03-01
申请号：US11766926
申请日：2007-06-22
申请人： Tomohito Mizuno , Yoshihiro Tsuchiya , Koji Shimazawa , Kei Hirata , Keita Kawamori
发明人： Tomohito Mizuno , Yoshihiro Tsuchiya , Koji Shimazawa , Kei Hirata , Keita Kawamori
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G01R33/093 , B82Y25/00 , B82Y40/00 , G11B5/3906 , H01F10/1936 , H01F10/3272 , H01F41/304 , H01L43/08 , H01L43/10 , H01L43/12 , Y10T29/49025 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048
摘要： A method for manufacturing a magnetic field detecting element having a free layer whose magnetization direction is variable depending on an external magnetic field and a pinned layer whose magnetization direction is fixed and these are stacked with an electrically conductive, nonmagnetic spacer layer sandwiched therebetween, wherein sense current flows in a direction perpendicular to film planes of the magnetic field detecting element. The method comprises: forming a spacer adjoining layer adjacent to the spacer layer, Heusler alloy layer, and a metal layer successively in this order; and forming either at least a part of the pinned layer or the free layer by heating the spacer adjoining layer, the Heusler alloy layer, and the metal layer. The spacer adjoining layer has a layer chiefly made of cobalt and iron. The Heusler alloy layer includes metal which is silver, gold, copper, palladium, or platinum, or an alloy thereof. The metal layer is made of the same.
摘要翻译：一种磁场检测元件的制造方法，该磁场检测元件具有磁化方向根据外部磁场而变化的自由层，其磁化方向固定的被钉扎层与夹在其间的导电非磁性间隔层堆叠，电流在垂直于磁场检测元件的膜平面的方向上流动。该方法包括：依次形成与间隔层相邻的间隔物邻接层，Heusler合金层和金属层; 以及通过加热间隔物邻接层，Heusler合金层和金属层来形成被钉扎层或自由层的至少一部分。间隔物邻接层具有主要由钴和铁制成的层。 Heusler合金层包括银，金，铜，钯或铂的金属或其合金。金属层由其制成。

8. 发明申请

US20070274010A1 Magnetoresistive element including heusler alloy layer and method of manufacturing same 有权
标题翻译：包括heusler合金层的磁阻元件及其制造方法
公开(公告)号：US20070274010A1
公开(公告)日：2007-11-29
申请号：US11725476
申请日：2007-03-20
申请人： Kei Hirata , Yoshihiro Tsuchiya , Tomohito Mizuno , Koji Shimazawa
发明人： Kei Hirata , Yoshihiro Tsuchiya , Tomohito Mizuno , Koji Shimazawa
IPC分类号： G11B5/33
CPC分类号： B82Y10/00 , B82Y25/00 , G11B5/3929 , G11B2005/3996
摘要： An MR element incorporates a nonmagnetic conductive layer, and a pinned layer and a free layer that are disposed to sandwich the nonmagnetic conductive layer. Each of the pinned layer and the free layer includes a Heusler alloy layer. The Heusler alloy layer contains a Heusler alloy in which atoms of a magnetic metallic element are placed at body-centered positions of unit cells, and an additive element that is a nonmagnetic metallic element that does not constitute the Heusler alloy. At least one of the pinned layer and the free layer includes a region in which the concentration of the additive element increases as the distance from the nonmagnetic conductive layer decreases, the region being adjacent to the nonmagnetic conductive layer.
摘要翻译： MR元件包括非磁性导电层，以及设置成夹持非磁性导电层的被钉扎层和自由层。每个被钉扎层和自由层包括Heusler合金层。 Heusler合金层包含Heusler合金，其中磁性金属元素的原子被放置在单元电池的体中心位置，而添加元素是不构成Heusler合金的非磁性金属元素。被钉扎层和自由层中的至少一个包括随着距离非磁性导电层的距离减小的添加元素的浓度增加的区域，该区域与非磁性导电层相邻。

9. 发明授权

US07881025B2 Magneto-resistive effect device having a spacer layer of a semiconductor layer interposed between first and second nonmagnetic metal layers and a work function control layer for use in a thin-film magnetic head usable in a head gimbal assembly in a hard disk system 有权
标题翻译：具有介于第一和第二非磁性金属层之间的半导体层的间隔层的磁阻效应器件和用于可用于硬盘系统中的头部万向节组件中的薄膜磁头的功函数控制层
公开(公告)号：US07881025B2
公开(公告)日：2011-02-01
申请号：US11931219
申请日：2007-10-31
申请人： Koji Shimazawa , Yoshihiro Tsuchiya , Tomohito Mizuno , Kei Hirata
发明人： Koji Shimazawa , Yoshihiro Tsuchiya , Tomohito Mizuno , Kei Hirata
IPC分类号： G11B5/39
CPC分类号： G11B5/39 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3906 , G11B5/3993 , H01F10/3272 , H01F41/306 , H01L43/08
摘要： The invention provides a CPP-GMR device comprising a spacer layer. The spacer layer comprises a first nonmagnetic metal layer and a second nonmagnetic metal layer, each formed of a nonmagnetic metal material, and a semiconductor layer interposed between the first nonmagnetic metal layer and the second nonmagnetic metal layer, and further comprises a work function control layer formed between the first nonmagnetic metal layer and the semiconductor layer and/or between the second nonmagnetic metal layer and the semiconductor layer. The semiconductor layer is an n-type semiconductor, and the work function control layer is made of a material having a work function smaller than that of said first nonmagnetic metal layer, and said second nonmagnetic metal layer. It is thus possible to obtain by far more improved advantages.
摘要翻译：本发明提供一种包括间隔层的CPP-GMR装置。间隔层包括由非磁性金属材料形成的第一非磁性金属层和第二非磁性金属层，以及介于第一非磁性金属层和第二非磁性金属层之间的半导体层，还包括功函数控制层形成在第一非磁性金属层和半导体层之间和/或第二非磁性金属层与半导体层之间。半导体层是n型半导体，功函数控制层由功函数小于所述第一非磁性金属层的功函数和所述第二非磁性金属层构成。因此可以获得更多改进的优点。

10. 发明申请

US20080117554A1 MAGNETO-RESISTIVE EFFECT DEVICE, THIN-FILM MAGNETIC HEAD, HEAD GIMBAL ASSEMBLY, AND HARD DISK SYSTEM 有权
标题翻译：磁阻效应器件，薄膜磁头，头盖组件和硬盘系统
公开(公告)号：US20080117554A1
公开(公告)日：2008-05-22
申请号：US11943171
申请日：2007-11-20
申请人： Shinji Hara , Kei Hirata , Koji Shimazawa , Yoshihiro Tsuchiya , Tomohito Mizuno
发明人： Shinji Hara , Kei Hirata , Koji Shimazawa , Yoshihiro Tsuchiya , Tomohito Mizuno
IPC分类号： G11B5/127
CPC分类号： G11B5/59683
摘要： The invention provides a giant magneto-resistive effect device having a CPP structure comprising a spacer layer, and a fixed magnetization layer and a free layer stacked one upon another with said spacer layer interposed between them, wherein the free layer functions such that its magnetization direction changes depending on an external magnetic field, and the spacer layer comprises a first nonmagnetic metal layer and a second nonmagnetic metal layer, each formed of a nonmagnetic metal material, and a semiconductor oxide layer interposed between them, wherein the semiconductor oxide layer forming a part of the spacer layer comprises zinc oxide as a main ingredient, wherein the main ingredient zinc oxide contains at least one selected from among oxides containing a trivalent cation of Al2O3, Ga2O3, In2O3, and B2O3, and a tetravalent cation of TiO2. It is thus possible to make thicker the semiconductor oxide layer forming a part of the spacer layer while keeping the device's area resistivity low as desired, thereby offering the advantages: much higher MR performance with much less variable device's area resistivity, and much more improved film performance reliability.
摘要翻译：本发明提供一种具有包括间隔层的CPP结构的巨磁阻效应器件，以及一个彼此层叠的所述间隔层彼此层叠的固定磁化层和自由层，其中自由层的功能是使其磁化方向变化取决于外部磁场，并且间隔层包括由非磁性金属材料形成的第一非磁性金属层和第二非磁性金属层以及介于它们之间的半导体氧化物层，其中形成部分的半导体氧化物层的间隔层包含氧化锌作为主要成分，其中主要成分氧化锌含有选自含有三价阳离子的氧化物中的至少一种，其中含有三价阳离子的Al 2 O 3， Ga 2 O 3，以及B 2 O 3，以及B 2 O 3， SUB> 3 <！ - SIPO - >和TiO 2的四价阳离子。因此，可以使形成间隔层的一部分的半导体氧化物层变得更厚，同时保持器件的面积电阻率为期望的低，从而具有以下优点：MR性能更高，可变器件的面积电阻率更小得多，并且更多改进的膜性能可靠性。

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