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    • 6. 发明授权
    • CVD apparatus for forming thin films using liquid reaction material
    • 使用液体反应材料形成薄膜的CVD装置
    • US06277201B1
    • 2001-08-21
    • US09301091
    • 1999-04-28
    • Tomohisa Nishikawa
    • Tomohisa Nishikawa
    • C23C1600
    • C23C16/4405C23C16/4486
    • A CVD apparatus includes: (a) a reaction chamber; (b) a vacuum device connected to the reaction chamber for vacuuming and exhausting the reaction chamber; (c) a susceptor that maintains the semiconductor substrate inside the reaction chamber; (d) a reaction gas supplier that supplies a reaction gas to the surface of the semiconductor substrate set on the susceptor; and (e) a liquid-source vaporization system connected to the reaction gas supplier, which is disposed upstream of the showerhead and is used for atomizing and vaporizing the liquid reaction material at a given flow rate prior to its entry into the reaction chamber. The liquid-source vaporization system includes: (i) an atomizer connected to a liquid reaction material supply source; and (ii) a vaporizer connected to the atomizer downstream thereof.
    • CVD设备包括:(a)反应室; (b)连接到反应室的真空装置,用于对反应室进行抽真空; (c)将半导体衬底保持在反应室内的感受体; (d)将反应气体供给到设置在基座上的半导体基板的表面的反应气体供给体; 和(e)连接到反应气体供应器的液体源蒸发系统,其设置在喷头的上游,并且用于在进入反应室之前以给定的流速使液体反应材料雾化和蒸发。 液体源蒸发系统包括:(i)与液体反应材料供应源连接的雾化器; 和(ii)连接到其下游的雾化器的蒸发器。