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1. 发明申请

US20060028775A1 Magnetic detecting element provided with free layer having layered-ferri configuration 有权
标题翻译：磁性检测元件设置有具有层状结构的自由层
公开(公告)号：US20060028775A1
公开(公告)日：2006-02-09
申请号：US11194090
申请日：2005-07-28
申请人： Tomohiro Yamashita , Naoya Hasegawa , Eiji Umetsu , Ryo Nakabayashi , Akira Takahashi
发明人： Tomohiro Yamashita , Naoya Hasegawa , Eiji Umetsu , Ryo Nakabayashi , Akira Takahashi
IPC分类号： G11B5/127 , G11B5/33
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B5/3945
摘要： A magnetic detecting element, which can suppress change in output asymmetry even if the magnetization direction of a pinned magnetic layer is changed 180°, is provided. The magnetic-film-thickness of a second free magnetic layer is increased so as to be greater than that of a first free magnetic layer and offset the torque applied to the second free magnetic layer with that applied to the first free magnetic layer when the sensing current magnetic field occurs. Thus, change in the magnetization direction of the free magnetic layer before and after a sensing current is applied in the magnetic detecting element can be suppressed. The orthogonal state between the free magnetic layer and the pinned magnetic layer is maintained even when a sensing current in the same direction as that before the occurrence is applied in the magnetic detecting element wherein pin inversion occurred, and the output asymmetry is maintained suitably.
摘要翻译：即使磁性层的磁化方向为180°，也能够抑制输出不对称的变化的磁性检测元件。第二自由磁性层的磁膜厚度增加到大于第一自由磁性层的磁膜厚度，并且当施加到第一自由磁性层时，施加到第二自由磁性层的扭矩偏移到第一自由磁性层发生电流磁场。因此，可以抑制在磁检测元件中施加感测电流之前和之后的自由磁性层的磁化方向的变化。即使当在发生针反转的磁检测元件中施加与发生前相同的方向的感测电流时，也保持自由磁性层和被钉扎磁性层之间的正交状态，并且适当地保持输出不对称性。

2. 发明授权

US07397639B2 Magnetic detecting element provided with free layer having layered-ferri configuration 有权
标题翻译：磁性检测元件设置有具有层状结构的自由层
公开(公告)号：US07397639B2
公开(公告)日：2008-07-08
申请号：US11194090
申请日：2005-07-28
申请人： Tomohiro Yamashita , Naoya Hasegawa , Eiji Umetsu , Ryo Nakabayashi , Akira Takahashi
发明人： Tomohiro Yamashita , Naoya Hasegawa , Eiji Umetsu , Ryo Nakabayashi , Akira Takahashi
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B5/3945
摘要： A magnetic detecting element, which can suppress change in output asymmetry even if the magnetization direction of a pinned magnetic layer is changed 180°, is provided. The magnetic-film-thickness of a second free magnetic layer is increased so as to be greater than that of a first free magnetic layer and offset the torque applied to the second free magnetic layer with that applied to the first free magnetic layer when the sensing current magnetic field occurs. Thus, change in the magnetization direction of the free magnetic layer before and after a sensing current is applied in the magnetic detecting element can be suppressed. The orthogonal state between the free magnetic layer and the pinned magnetic layer is maintained even when a sensing current in the same direction as that before the occurrence is applied in the magnetic detecting element wherein pin inversion occurred, and the output asymmetry is maintained suitably.
摘要翻译：即使磁性层的磁化方向为180°，也能够抑制输出不对称的变化的磁性检测元件。第二自由磁性层的磁膜厚度增加到大于第一自由磁性层的磁膜厚度，并且当施加到第一自由磁性层时，施加到第二自由磁性层上的扭矩偏移到第一自由磁性层发生电流磁场。因此，可以抑制在磁检测元件中施加感测电流之前和之后的自由磁性层的磁化方向的变化。即使当在发生针反转的磁检测元件中施加与发生前相同的方向的感测电流时，也保持自由磁性层和被钉扎磁性层之间的正交状态，并且适当地保持输出不对称性。

3. 发明授权

US08009391B2 Magnetic sensing element and method for manufacturing the same 有权
标题翻译：磁传感元件及其制造方法
公开(公告)号：US08009391B2
公开(公告)日：2011-08-30
申请号：US12120887
申请日：2008-05-15
申请人： Kenichi Tanaka , Eiji Umetsu , Kazuaki Ikarashi , Kota Asatsuma , Norimasa Okanishi , Yoshihiro Nishiyama , Masamichi Saito , Yosuke Ide , Kazumasa Nishimura , Ryo Nakabayashi , Hidekazu Kobayashi , Akio Hanada , Naoya Hasegawa
发明人： Kenichi Tanaka , Eiji Umetsu , Kazuaki Ikarashi , Kota Asatsuma , Norimasa Okanishi , Yoshihiro Nishiyama , Masamichi Saito , Yosuke Ide , Kazumasa Nishimura , Ryo Nakabayashi , Hidekazu Kobayashi , Akio Hanada , Naoya Hasegawa
IPC分类号： G11B5/33
CPC分类号： G01R33/093 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G11B5/3906 , G11B5/3909 , H01F10/30 , H01F10/3254 , H01F10/3277 , H01F41/302 , H01L43/08 , H01L43/12
摘要： An underlying layer is composed of Co—Fe—B that is an amorphous magnetic material. Thus, the upper surface of the underlying layer can be taken as a lower shield layer-side reference position for obtaining a gap length (GL) between upper and lower shields, resulting in a narrower gap than before. In addition, since the underlying layer has an amorphous structure, the underlying layer does not adversely affect the crystalline orientation of individual layers to be formed thereon, and the surface of the underlying layer has good planarizability. Accordingly, PW50 (half-amplitude pulse width) and SN ratio can be improved more than before without causing a decrease in rate of change in resistance (Δ R/R) or the like, thereby achieving a structure suitable for increasing recording density.
摘要翻译：下层由作为非晶磁性材料的Co-Fe-B组成。因此，可以将下层的上表面作为下屏蔽层侧参考位置，以获得上屏蔽和下屏蔽之间的间隙长度（GL），导致与之前的间隙较窄。此外，由于底层具有非晶结构，所以下层不会对要在其上形成的各层的结晶取向产生不利影响，并且下层的表面具有良好的平坦化性。因此，PW50（半幅度脉冲宽度）和SN比可以比以前更多地改善，而不会导致电阻变化率（＆Dgr; R / R）等的降低，从而实现适于提高记录密度的结构。

4. 发明申请

US20080074805A1 TUNNEL MAGNETORESISTIVE SENSOR IN WHICH AT LEAST PART OF PINNED LAYER IS COMPOSED OF CoFeB LAYER AND METHOD FOR MANUFACTURING THE TUNNEL MAGNETORESISTIVE SENSOR 有权
标题翻译：隧道磁体传感器，其中紧固层的至少一部分由CoFeB层组成，以及制造隧道磁传感器的方法
公开(公告)号：US20080074805A1
公开(公告)日：2008-03-27
申请号：US11857921
申请日：2007-09-19
申请人： Kazuaki Ikarashi , Eiji Umetsu , Kenichi Tanaka , Kazumasa Nishimura , Masamichi Saito , Yosuke Ide , Ryo Nakabayashi , Yoshihiro Nishiyama , Hidekazu Kobayashi , Naoya Hasegawa
发明人： Kazuaki Ikarashi , Eiji Umetsu , Kenichi Tanaka , Kazumasa Nishimura , Masamichi Saito , Yosuke Ide , Ryo Nakabayashi , Yoshihiro Nishiyama , Hidekazu Kobayashi , Naoya Hasegawa
IPC分类号： G11B5/33
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/098 , G11B5/3906 , G11B5/3909 , G11C11/16 , H01F10/132 , H01F10/3254 , H01F41/302 , H01L43/12
摘要： A tunnel magnetoresistive sensor includes a pinned magnetic layer, an insulating barrier layer formed of Mg—O, and a free magnetic layer. A barrier-layer-side magnetic sublayer constituting at least part of the pinned magnetic layer and being in contact with the insulating barrier layer includes a first magnetic region formed of CoFeB or FeB and a second magnetic region formed of CoFe or Fe. The second magnetic region is disposed between the first magnetic region and the insulating barrier layer.
摘要翻译：隧道磁阻传感器包括钉扎磁性层，由Mg-O形成的绝缘阻挡层和自由磁性层。构成被钉扎磁性层的至少一部分并与绝缘阻挡层接触的阻挡层侧磁性子层包括由CoFeB或FeB形成的第一磁性区域和由CoFe或Fe形成的第二磁性区域。第二磁性区域设置在第一磁性区域和绝缘阻挡层之间。

5. 发明授权

US07969693B2 Tunnel magnetoresistive sensor in which at least part of pinned layer is composed of CoFeB layer and method for manufacturing the tunnel magnetoresistive sensor 有权
标题翻译：隧道磁阻传感器，其中至少部分被钉扎层由CoFeB层组成，隧道磁阻传感器的制造方法
公开(公告)号：US07969693B2
公开(公告)日：2011-06-28
申请号：US11857921
申请日：2007-09-19
申请人： Kazuaki Ikarashi , Eiji Umetsu , Kenichi Tanaka , Kazumasa Nishimura , Masamichi Saito , Yosuke Ide , Ryo Nakabayashi , Yoshihiro Nishiyama , Hidekazu Kobayashi , Naoya Hasegawa
发明人： Kazuaki Ikarashi , Eiji Umetsu , Kenichi Tanaka , Kazumasa Nishimura , Masamichi Saito , Yosuke Ide , Ryo Nakabayashi , Yoshihiro Nishiyama , Hidekazu Kobayashi , Naoya Hasegawa
IPC分类号： G11B5/39
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/098 , G11B5/3906 , G11B5/3909 , G11C11/16 , H01F10/132 , H01F10/3254 , H01F41/302 , H01L43/12
摘要： A tunnel magnetoresistive sensor includes a pinned magnetic layer, an insulating barrier layer formed of Mg—O, and a free magnetic layer. A barrier-layer-side magnetic sublayer constituting at least part of the pinned magnetic layer and being in contact with the insulating barrier layer includes a first magnetic region formed of CoFeB or FeB and a second magnetic region formed of CoFe or Fe. The second magnetic region is disposed between the first magnetic region and the insulating barrier layer.
摘要翻译：隧道磁阻传感器包括钉扎磁性层，由Mg-O形成的绝缘阻挡层和自由磁性层。构成被钉扎磁性层的至少一部分并与绝缘阻挡层接触的阻挡层侧磁性子层包括由CoFeB或FeB形成的第一磁性区域和由CoFe或Fe形成的第二磁性区域。第二磁性区域设置在第一磁性区域和绝缘阻挡层之间。

6. 发明申请

US20080285180A1 MAGNETIC SENSING ELEMENT AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：磁感应元件及其制造方法
公开(公告)号：US20080285180A1
公开(公告)日：2008-11-20
申请号：US12120887
申请日：2008-05-15
申请人： Kenichi Tanaka , Eiji Umetsu , Kazuaki Ikarashi , Kota Asatsuma , Norimasa Okanishi , Yoshihiro Nishiyama , Masamichi Saito , Yosuke Ide , Kazumasa Nishimura , Ryo Nakabayashi , Hidekazu Kobayashi , Akio Hanada , Naoya Hasegawa
发明人： Kenichi Tanaka , Eiji Umetsu , Kazuaki Ikarashi , Kota Asatsuma , Norimasa Okanishi , Yoshihiro Nishiyama , Masamichi Saito , Yosuke Ide , Kazumasa Nishimura , Ryo Nakabayashi , Hidekazu Kobayashi , Akio Hanada , Naoya Hasegawa
IPC分类号： G11B5/33 , B05D5/12
CPC分类号： G01R33/093 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G11B5/3906 , G11B5/3909 , H01F10/30 , H01F10/3254 , H01F10/3277 , H01F41/302 , H01L43/08 , H01L43/12
摘要： An underlying layer is composed of Co—Fe—B that is an amorphous magnetic material. Thus, the upper surface of the underlying layer can be taken as a lower shield layer-side reference position for obtaining a gap length (GL) between upper and lower shields, resulting in a narrower gap than before. In addition, since the underlying layer has an amorphous structure, the underlying layer does not adversely affect the crystalline orientation of individual layers to be formed thereon, and the surface of the underlying layer has good planarizability. Accordingly, PW50 (half-amplitude pulse width) and SN ratio can be improved more than before without causing a decrease in rate of change in resistance (Δ R/R) or the like, thereby achieving a structure suitable for increasing recording density.
摘要翻译：下层由作为非晶磁性材料的Co-Fe-B组成。因此，可以将下层的上表面作为下屏蔽层侧参考位置，以获得上屏蔽和下屏蔽之间的间隙长度（GL），导致与之前的间隙较窄。此外，由于底层具有非晶结构，所以下层不会对要在其上形成的各层的结晶取向产生不利影响，并且下层的表面具有良好的平坦化性。因此，可以比以前更多地改善PW50（半幅度脉冲宽度）和SN比，而不会导致电阻变化率（ΔR/ R）等的降低，从而实现适于提高记录密度的结构。

7. 发明申请

US20060110625A1 Magnetic sensing element with improved magnetic sensitivity stability and method for producing the same 有权
公开(公告)号：US20060110625A1
公开(公告)日：2006-05-25
申请号：US11266956
申请日：2005-10-26
申请人： Ryo Nakabayashi , Eiji Umetsu , Kazuaki Ikarashi , Fumihito Koike , Naoya Hasegawa
发明人： Ryo Nakabayashi , Eiji Umetsu , Kazuaki Ikarashi , Fumihito Koike , Naoya Hasegawa
IPC分类号： G11B5/33
CPC分类号： H01F10/3277 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3929 , H01F10/30 , H01F10/3295 , H01F41/303 , H01L43/08 , Y10T428/1107 , Y10T428/1143 , Y10T428/115 , Y10T428/1193
摘要： A magnetic sensing element includes a free magnetic layer having a three-layer structure including a first enhancement layer in contact with a nonmagnetic material layer, a second enhancement layer, and a low-coercivity layer. The second enhancement layer has a lower magnetostriction coefficient λ than the first enhancement layer. If such an enhancement layer having a bilayer structure is used, rather than a known monolayer structure, and the second enhancement layer has a lower magnetostriction coefficient λ than the first enhancement layer, the rate of change in magnetoresistance of the magnetic sensing element can be increased with no increase in the magnetostriction coefficient λ of the free magnetic layer.

8. 发明授权

US07567412B2 Magnetic sensing element with improved magnetic sensitivity stability and method for producing the same 有权
标题翻译：具有改善的磁敏度稳定性的磁传感元件及其制造方法
公开(公告)号：US07567412B2
公开(公告)日：2009-07-28
申请号：US11266956
申请日：2005-10-26
申请人： Ryo Nakabayashi , Eiji Umetsu , Kazuaki Ikarashi , Fumihito Koike , Naoya Hasegawa
发明人： Ryo Nakabayashi , Eiji Umetsu , Kazuaki Ikarashi , Fumihito Koike , Naoya Hasegawa
IPC分类号： G11B5/39
CPC分类号： H01F10/3277 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3929 , H01F10/30 , H01F10/3295 , H01F41/303 , H01L43/08 , Y10T428/1107 , Y10T428/1143 , Y10T428/115 , Y10T428/1193
摘要： A magnetic sensing element includes a free magnetic layer having a three-layer structure including a first enhancement layer in contact with a nonmagnetic material layer, a second enhancement layer, and a low-coercivity layer. The second enhancement layer has a lower magnetostriction coefficient λ than the first enhancement layer. If such an enhancement layer having a bilayer structure is used, rather than a known monolayer structure, and the second enhancement layer has a lower magnetostriction coefficient λ than the first enhancement layer, the rate of change in magnetoresistance of the magnetic sensing element can be increased with no increase in the magnetostriction coefficient λ of the free magnetic layer.
摘要翻译：磁传感元件包括具有包括与非磁性材料层接触的第一增强层，第二增强层和低矫顽力层的三层结构的自由磁性层。第二增强层具有比第一增强层更低的磁致伸缩系数λ。如果使用具有双层结构的这种增强层，而不是已知的单层结构，并且第二增强层具有比第一增强层更低的磁致伸缩系数λ，则可以增加磁传感元件的磁阻的变化率而自由磁性层的磁致伸缩系数λ则没有增加。

9. 发明申请

US20060262459A1 Magnetic detection element and manufacturing the same 审中-公开
标题翻译：磁性检测元件和制造相同
公开(公告)号：US20060262459A1
公开(公告)日：2006-11-23
申请号：US11413217
申请日：2006-04-28
申请人： Kazumi Kamai , Naoya Hasegawa , Eiji Umetsu , Kazuaki Ikarashi , Ryo Nakabayashi
发明人： Kazumi Kamai , Naoya Hasegawa , Eiji Umetsu , Kazuaki Ikarashi , Ryo Nakabayashi
IPC分类号： G11B5/33 , H04R31/00
CPC分类号： G11B5/3906 , B82Y40/00 , G11B5/3163 , G11B5/3903 , H01F10/3263 , H01F10/3272 , H01F10/3281 , H01F41/303 , Y10T29/49021
摘要： A magnetic detection element capable of increasing the magnetoresistance ratio (ΔR/R) and increasing the reproduction output by applying a surface modification treatment and improving the layer structure of a pinned magnetic layer, as well as a method for manufacturing the same, is provided. A surface of a non-magnetic intermediate layer formed from Ru or the like is subjected to a first treatment, in which the surface is activated by conducting a plasma treatment, and a second treatment, in which the surface is exposed to an atmosphere containing oxygen, a second pinned magnetic layer is allowed to have a two-layer structure composed of a non-magnetic material layer-side magnetic layer formed from Co and a non-magnetic intermediate layer-side magnetic layer formed from a CoFe alloy, and the film thickness ratio of the non-magnetic intermediate layer-side magnetic layer to the second pinned magnetic layer is specified to be 16% to 50%.
摘要翻译：提供了能够通过施加表面改性处理并改善被钉扎的磁性层的层结构来提高磁阻比（DeltaR / R）并增加再现输出的磁性检测元件及其制造方法。对由Ru等形成的非磁性中间层的表面进行第一处理，其中表面通过进行等离子体处理而被活化，第二处理是将表面暴露于含有氧的气氛第二被钉扎磁性层被允许具有由Co形成的非磁性材料层侧磁性层和由CoFe合金形成的非磁性中间层侧磁性层构成的两层结构，并且该膜非磁性中间层侧磁性层与第二被钉扎磁性层的厚度比规定为16〜50％。

10. 发明授权

US07463026B2 Magnetic sensor including bridge circuit having fixed resistance like structure of element 有权
标题翻译：磁传感器包括具有固定电阻的桥接电路，如元件结构
公开(公告)号：US07463026B2
公开(公告)日：2008-12-09
申请号：US11679083
申请日：2007-02-26
申请人： Shinichi Sasaki , Kiyoshi Sato , Naoya Hasegawa , Yoshito Sasaki , Eiji Umetsu
发明人： Shinichi Sasaki , Kiyoshi Sato , Naoya Hasegawa , Yoshito Sasaki , Eiji Umetsu
IPC分类号： G01R33/09 , G01B7/14 , H01L43/08
CPC分类号： H04M1/0245 , B82Y25/00 , G01R33/07 , G01R33/093 , H04M2250/12
摘要： A magnetic sensor uses a magnetoresistance element which can be driven in a stable manner with a dipole irrespective of a polarity of an external magnetic field. A resistance value R of first magnetoresistance elements varies, and a resistance value of second magnetoresistance elements does not vary with a variation in magnetic field magnitude of the external magnetic field H1 in the positive direction. A resistance value R of second magnetoresistance elements varies and a resistance value of first magnetoresistance elements does not vary with a variation in magnetic field magnitude of the external magnetic field H2 in the negative direction. Accordingly, the magnetic sensor can be driven in a stable manner with a dipole irrespective of the polarity of the external magnetic field.
摘要翻译：磁传感器使用磁阻元件，其可以与外部磁场的极性无关地以偶极子稳定地驱动。第一磁阻元件的电阻值R变化，第二磁阻元件的电阻值不随着外部磁场H1在正方向上的磁场强度的变化而变化。第二磁阻元件的电阻值R变化，第一磁阻元件的电阻值不随外部磁场H2在负方向的磁场强度的变化而变化。因此，无论外部磁场的极性如何，都可以用偶极子稳定地驱动磁传感器。

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