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1. 发明申请

US20120115317A1 PLASMA DOPING METHOD AND APPARATUS THEREOF 有权
标题翻译：等离子喷涂方法及其设备
公开(公告)号：US20120115317A1
公开(公告)日：2012-05-10
申请号：US13291186
申请日：2011-11-08
申请人： Tomohiro OKUMURA , Mitsuo Saitoh , Ichiro Nakayama , Taro Kitaoka
发明人： Tomohiro OKUMURA , Mitsuo Saitoh , Ichiro Nakayama , Taro Kitaoka
IPC分类号： H01L21/223 , C23C16/455 , C23C16/458 , C23C16/50
CPC分类号： H01J37/32412 , H01L21/2236 , H01L31/18
摘要： In a plasma torch unit, a conductor rod having a spiral shape is disposed inside a quartz pipe having a surface coated with boron glass, and a brass block is disposed on the periphery thereof. While a gas is being supplied into a cylindrical chamber, a high-frequency power is supplied to the conductor rod and a plasma is generated in the cylindrical chamber, so that a base material is irradiated with the plasma.
摘要翻译：在等离子体焰炬单元中，具有螺旋形状的导体棒设置在具有硼玻璃的表面的石英管的内部，并且在其周边设置有黄铜块。当气体被供应到圆柱形腔室中时，向导体杆供应高频电力，并且在圆柱形腔室中产生等离子体，使得等离子体照射基材。

2. 发明授权

US08450819B2 Plasma doping method and apparatus thereof 有权
标题翻译：等离子体掺杂方法及其装置
公开(公告)号：US08450819B2
公开(公告)日：2013-05-28
申请号：US13291186
申请日：2011-11-08
申请人： Tomohiro Okumura , Mitsuo Saitoh , Ichiro Nakayama , Taro Kitaoka
发明人： Tomohiro Okumura , Mitsuo Saitoh , Ichiro Nakayama , Taro Kitaoka
IPC分类号： H01L27/14 , H01L21/44
CPC分类号： H01J37/32412 , H01L21/2236 , H01L31/18
摘要： In a plasma torch unit, a conductor rod having a spiral shape is disposed inside a quartz pipe having a surface coated with boron glass, and a brass block is disposed on the periphery thereof. While a gas is being supplied into a cylindrical chamber, a high-frequency power is supplied to the conductor rod and a plasma is generated in the cylindrical chamber, so that a base material is irradiated with the plasma.
摘要翻译：在等离子体焰炬单元中，具有螺旋形状的导体棒设置在具有硼玻璃的表面的石英管的内部，并且在其周边设置有黄铜块。当气体被供应到圆柱形腔室中时，向导体杆供应高频电力，并且在圆柱形腔室中产生等离子体，使得等离子体照射基材。

3. 发明授权

US08772067B2 Silicon substrate having textured surface, solar cell having same, and method for producing same 有权
标题翻译：具有纹理表面的硅衬底，具有其的太阳能电池及其制造方法
公开(公告)号：US08772067B2
公开(公告)日：2014-07-08
申请号：US13823470
申请日：2012-04-13
申请人： Ichiro Nakayama , Tsuyoshi Nomura , Tomohiro Okumura , Mitsuo Saitoh , Hiroshi Tanabe , Yukiya Usui
发明人： Ichiro Nakayama , Tsuyoshi Nomura , Tomohiro Okumura , Mitsuo Saitoh , Hiroshi Tanabe , Yukiya Usui
IPC分类号： H01L21/00 , H01L31/0224 , H01L31/18 , H01L31/0236 , H01L31/068
CPC分类号： H01L31/1804 , H01L31/02245 , H01L31/022458 , H01L31/02363 , H01L31/068 , H01L31/1892 , Y02E10/547 , Y02P70/521
摘要： The purpose of the present invention is to obtain a finer texture for a silicon substrate having a textured surface and thereby obtain a thinner silicon substrate for a solar cell. The invention provides a silicon substrate that has a thickness of 50 [mu]m or less and substrate surface orientation (111), and that has a textured surface on which a texture has been formed. Such a silicon substrate is produced by a process comprising a step (A) for preparing a silicon substrate that preferably has a thickness of 50 [mu]m or less and substrate surface orientation (111), and a step (B) for texturing by blowing etching as comprising a fluorine-containing gas onto the surface of the prepared silicon substrate.
摘要翻译：本发明的目的是获得具有纹理表面的硅衬底的更细的纹理，从而获得更薄的太阳能电池用硅衬底。本发明提供了一种硅衬底，其具有50μm或更小的厚度和衬底表面取向（111），并且其具有纹理表面已形成纹理表面。这样的硅衬底通过包括用于制备优选厚度为50μm或更小的衬底表面取向（111）的硅衬底的步骤（A）和用于通过在制备的硅衬底的表面上进行包含含氟气体的蚀刻。

4. 发明申请

US20120325777A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 有权
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：US20120325777A1
公开(公告)日：2012-12-27
申请号：US13582557
申请日：2011-05-11
申请人： Tomohiro Okumura , Ichiro Nakayama , Mitsuo Saitoh
发明人： Tomohiro Okumura , Ichiro Nakayama , Mitsuo Saitoh
IPC分类号： H01L21/465 , B44C1/22 , C23C16/50
CPC分类号： H05H1/30 , H01J37/3211 , H01J37/32376 , H01J37/32825 , H01L21/324
摘要： A base material is placed on a base material placement face of a base material placement table. An inductively coupled plasma torch unit is structured with a cylindrical chamber structured with a cylinder made of an insulating material and provided with a rectangular slit-like plasma jet port, and lids closing opposing ends of the cylinder, a gas jet port that supplies gas into the cylindrical chamber, and a solenoid coil that generates a high frequency electromagnetic field in the cylindrical chamber. By a high frequency power supply supplying a high frequency power to the solenoid coil, plasma is generated in the cylindrical chamber, and the plasma is emitted from the plasma jet port to the base material. While relatively shifting the plasma torch unit and the base material placement table, a base material surface can be subjected to heat treatment.
摘要翻译：基材放置在基材放置台的基材放置面上。电感耦合等离子体焰炬单元构造为具有由绝缘材料构成的圆柱形腔室，该圆柱形腔体由绝缘材料构成，并设置有矩形裂缝状等离子体喷射口，并且盖住气缸的相对端部，气体喷射口将气体供应到圆柱形腔室和在圆柱形腔室中产生高频电磁场的螺线管线圈。通过向螺线管线圈提供高频电力的高频电源，在圆筒形室中产生等离子体，等离子体从等离子体喷射口发射到基体材料。在相对移动等离子体焰炬单元和基材放置台的同时，可以对基材表面进行热处理。

5. 发明授权

US07465407B2 Plasma processing method and apparatus 失效
标题翻译：等离子体处理方法和装置
公开(公告)号：US07465407B2
公开(公告)日：2008-12-16
申请号：US10649670
申请日：2003-08-28
申请人： Mitsuo Saitoh , Tomohiro Okumura , Ichiro Nakayama
发明人： Mitsuo Saitoh , Tomohiro Okumura , Ichiro Nakayama
IPC分类号： C23C16/00
CPC分类号： H01J37/32009 , C23C16/5096 , H01J37/32376
摘要： In a plasma processing method for supplying an electric power to a first electrode, making a first electrode have a ground potential, or making a first electrode have a floating potential while supplying gas to a plasma source arranged in a vicinity of an object to be processed at a pressure in a vicinity of an atmospheric pressure. The method includes processing a part of the object to be processed with a plasma in a state where an area of a surface of a potentially controlled second electrode, arranged in a position opposite to the plasma source via the object to be processed, is made superposed on the object to be processed smaller than an area of a surface of the plasma source superposed on the object to be processed.
摘要翻译：在用于向第一电极供给电力的等离子体处理方法中，使第一电极具有接地电位，或者使第一电极具有浮置电位，同时向布置在待处理物体附近的等离子体源供给气体在大气压力附近的压力下。该方法包括在等离子体处理待处理物体的一部分的状态，其中经由待处理物体布置在与等离子体源相反的位置的潜在受控的第二电极的表面的面积被叠加对待处理的物体小于叠加在待处理物体上的等离子体源的表面的面积。

6. 发明授权

US08703613B2 Plasma processing apparatus and plasma processing method 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US08703613B2
公开(公告)日：2014-04-22
申请号：US13582557
申请日：2011-05-11
申请人： Tomohiro Okumura , Ichiro Nakayama , Mitsuo Saitoh
发明人： Tomohiro Okumura , Ichiro Nakayama , Mitsuo Saitoh
IPC分类号： H01L21/44 , H01L27/14
CPC分类号： H05H1/30 , H01J37/3211 , H01J37/32376 , H01J37/32825 , H01L21/324
摘要： A base material is placed on a base material placement face of a base material placement table. An inductively coupled plasma torch unit is structured with a cylindrical chamber structured with a cylinder made of an insulating material and provided with a rectangular slit-like plasma jet port, and lids closing opposing ends of the cylinder, a gas jet port that supplies gas into the cylindrical chamber, and a solenoid coil that generates a high frequency electromagnetic field in the cylindrical chamber. By a high frequency power supply supplying a high frequency power to the solenoid coil, plasma is generated in the cylindrical chamber, and the plasma is emitted from the plasma jet port to the base material. While relatively shifting the plasma torch unit and the base material placement table, a base material surface can be subjected to heat treatment.
摘要翻译：基材放置在基材放置台的基材放置面上。电感耦合等离子体焰炬单元构造为具有由绝缘材料构成的圆柱形腔室，该圆柱形腔体由绝缘材料构成，并设置有矩形裂缝状等离子体喷射口，并且盖住气缸的相对端部，气体喷射口将气体供应到圆柱形腔室和在圆柱形腔室中产生高频电磁场的螺线管线圈。通过向螺线管线圈提供高频电力的高频电源，在圆筒形室中产生等离子体，等离子体从等离子体喷射口发射到基体材料。在相对移动等离子体焰炬单元和基材放置台的同时，可以对基材表面进行热处理。

7. 发明申请

US20130183791A1 SILICON SUBSTRATE HAVING TEXTURED SURFACE, SOLAR CELL HAVING SAME, AND METHOD FOR PRODUCING SAME 有权
标题翻译：具有纹理表面的硅衬底，具有该表面的太阳能电池及其制造方法
公开(公告)号：US20130183791A1
公开(公告)日：2013-07-18
申请号：US13823470
申请日：2012-04-13
申请人： Ichiro Nakayama , Tsuyoshi Nomura , Tomohiro Okumura , Mitsuo Saitoh , Hiroshi Tanabe , Yukiya Usui
发明人： Ichiro Nakayama , Tsuyoshi Nomura , Tomohiro Okumura , Mitsuo Saitoh , Hiroshi Tanabe , Yukiya Usui
IPC分类号： H01L31/18
CPC分类号： H01L31/1804 , H01L31/02245 , H01L31/022458 , H01L31/02363 , H01L31/068 , H01L31/1892 , Y02E10/547 , Y02P70/521
摘要： The purpose of the present invention is to obtain a finer texture for a silicon substrate having a textured surface and thereby obtain a thinner silicon substrate for a solar cell. The invention provides a silicon substrate that has a thickness of 50 [mu]m or less and substrate surface orientation (111), and that has a textured surface on which a texture has been formed. Such a silicon substrate is produced by a process comprising a step (A) for preparing a silicon substrate that preferably has a thickness of 50 [mu]m or less and substrate surface orientation (111), and a step (B) for texturing by blowing etching as comprising a fluorine-containing gas onto the surface of the prepared silicon substrate.
摘要翻译：本发明的目的是获得具有纹理表面的硅衬底的更细的纹理，从而获得更薄的太阳能电池用硅衬底。本发明提供了一种硅衬底，其具有50μm或更小的厚度和衬底表面取向（111），并且其具有纹理表面已形成纹理表面。这样的硅衬底通过包括用于制备优选厚度为50μm或更小的衬底表面取向（111）的硅衬底的步骤（A）和用于通过在制备的硅衬底的表面上进行包含含氟气体的蚀刻。

8. 发明授权

US08652953B2 Plasma doping method with gate shutter 失效
标题翻译：等离子体掺杂法与栅极快门
公开(公告)号：US08652953B2
公开(公告)日：2014-02-18
申请号：US13560648
申请日：2012-07-27
申请人： Tomohiro Okumura , Yuichiro Sasaki , Katsumi Okashita , Bunji Mizuno , Hiroyuki Ito , Ichiro Nakayama , Cheng-Guo Jin
发明人： Tomohiro Okumura , Yuichiro Sasaki , Katsumi Okashita , Bunji Mizuno , Hiroyuki Ito , Ichiro Nakayama , Cheng-Guo Jin
IPC分类号： H01L21/26 , H01L21/42
CPC分类号： H01L21/2236 , H01J37/321 , H01J37/32412 , H01J37/32458 , H01J37/32623 , H01J37/32633
摘要： In a plasma doping device according to the invention, a vacuum chamber is evacuated with a turbo-molecular pump as an exhaust device via a exhaust port while a predetermined gas is being introduced from a gas supply device in order to maintain the inside of the vacuum chamber to a predetermined pressure with a pressure regulating valve. A high-frequency power of 13.56 MHz is supplied by a high-frequency power source to a coil provided in the vicinity of a dielectric window opposed to a sample electrode to generate inductive-coupling plasma in the vacuum chamber. A high-frequency power source for supplying a high-frequency power to the sample electrode is provided. Uniformity of processing is enhanced by driving a gate shutter and covering a through gate.
摘要翻译：在根据本发明的等离子体掺杂装置中，在从气体供给装置引入预定气体的同时，通过排气口将涡轮分子泵作为排气装置抽真空室，以保持真空内部通过压力调节阀到达预定压力。 13.56MHz的高频功率由高频电源提供给设置在与样品电极相对的电介质窗口附近的线圈，以在真空室中产生电感耦合等离子体。提供了用于向样品电极提供高频电力的高频电源。通过驱动闸门并覆盖通过门来增强处理的均匀性。

9. 发明授权

US07759254B2 Method for forming impurity-introduced layer, method for cleaning object to be processed apparatus for introducing impurity and method for producing device 有权
标题翻译：形成杂质导入层的方法，用于清洗待加工物体的方法，用于引入杂质的方法及其制造方法
公开(公告)号：US07759254B2
公开(公告)日：2010-07-20
申请号：US10569464
申请日：2004-08-25
申请人： Yuichiro Sasaki , Katsumi Okashita , Bunji Mizuno , Hiroyuki Ito , Cheng-Guo Jin , Hideki Tamura , Ichiro Nakayama , Tomohiro Okumura , Satoshi Maeshima
发明人： Yuichiro Sasaki , Katsumi Okashita , Bunji Mizuno , Hiroyuki Ito , Cheng-Guo Jin , Hideki Tamura , Ichiro Nakayama , Tomohiro Okumura , Satoshi Maeshima
IPC分类号： H01L21/302
CPC分类号： H01L21/02052 , H01L21/2236
摘要： A method of forming an impurity-introduced layer is disclosed. The method includes at least a step of forming a resist pattern on a principal face of a solid substrate such as a silicon substrate (S27); a step of introducing impurity into the solid substrate through plasma-doping in ion mode (S23), a step of removing a resist (S28), a step of cleaning metal contamination and particles attached to a surface of the solid substrate (S25a); a step of anneal (S26). The step of removing a resist (S28) irradiates the resist with oxygen-plasma or brings mixed solution of sulfuric acid and hydrogen peroxide water, or mixed solution of NH4OH, H2O2 and H2O into contact with the resist. The step of cleaning (S25a) brings mixed solution of sulfuric acid and hydrogen peroxide water, or mixed solution of NH4OH, H2O2 and H2O into contact with the principal face of the solid substrate. The step of removing a resist (S28) and the step of cleaning (S25a) can be conducted simultaneously by bringing mixed solution of sulfuric acid and hydrogen peroxide water, or mixed solution of NH4OH, H2O2 and H2O into contact with the principal face of the solid substrate.
摘要翻译：公开了一种形成杂质导入层的方法。该方法至少包括在诸如硅衬底的固体衬底的主面上形成抗蚀剂图案的步骤（S27）; 通过离子模式的等离子体掺杂（S23）将杂质引入固体基板的步骤，去除抗蚀剂的步骤（S28），清洁附着在固体基板表面上的金属污染物和颗粒的步骤（S25a）; 退火步骤（S26）。去除抗蚀剂的步骤（S28）用氧等离子体照射抗蚀剂，或者将硫酸和过氧化氢水的混合溶液，或NH 4 OH，H 2 O 2和H 2 O的混合溶液与抗蚀剂接触。清洗步骤（S25a）将硫酸和过氧化氢水或NH 4 OH，H 2 O 2和H 2 O的混合溶液混合溶液与固体基质的主面接触。除去抗蚀剂（S28）和清洗步骤（S25a）的步骤可以通过将硫酸和过氧化氢水的混合溶液或NH 4 OH，H 2 O 2和H 2 O的混合溶液与主要面接触来同时进行固体基质。

10. 发明申请

US20100098837A1 PLASMA DOPING METHOD AND APPARATUS 失效
标题翻译：等离子喷涂方法和装置
公开(公告)号：US20100098837A1
公开(公告)日：2010-04-22
申请号：US12648142
申请日：2009-12-28
申请人： Tomohiro OKUMURA , Yuichiro Sasaki , Katsumi Okashita , Hiroyuki Ito , Bunji Mizuno , Cheng-Guo Jin , Ichiro Nakayama
发明人： Tomohiro OKUMURA , Yuichiro Sasaki , Katsumi Okashita , Hiroyuki Ito , Bunji Mizuno , Cheng-Guo Jin , Ichiro Nakayama
IPC分类号： C23C16/52 , H05H1/24 , C23C16/448
CPC分类号： H01L21/2236 , H01J37/321 , H01J37/32412 , H01J2237/2001
摘要： It is intended to provide a plasma doping method and apparatus which are superior in the controllability of the concentration of an impurity that is introduced into a surface layer of a sample.A prescribed gas is introduced into a vacuum container 1 from a gas supply apparatus 2 while being exhausted by a turbomolecular pump 3 as an exhaust apparatus. The pressure in the vacuum container 1 is kept at a prescribed value by a pressure regulating valve 4. High-frequency electric power of 13.56 MHz is supplied from a high-frequency power source 5 to a coil 8 disposed close to a dielectric window 7 which is opposed to a sample electrode 6, whereby induction-coupled plasma is generated in the vacuum container 1. A high-frequency power source 10 for supplying high-frequency electric power to the sample electrode 6 is provided. Every time a prescribed number of samples have been processed, a dummy sample is subjected to plasma doping and then to heating. The conditions for processing of a sample are controlled so that the measurement value of the surface sheet resistance becomes equal to a prescribed value, whereby the controllability of the impurity concentration can be increased.
摘要翻译：旨在提供一种等离子体掺杂方法和装置，该等离子体掺杂方法和装置在引入样品的表面层中的杂质的浓度的可控性方面是优异的。将规定的气体从作为排气装置的涡轮分子泵3排出而从气体供给装置2引入真空容器1。真空容器1中的压力通过压力调节阀4保持在规定值。13.56MHz的高频电力从高频电源5供给到靠近电介质窗7设置的线圈8，与样品电极6相对，从而在真空容器1中产生感应耦合等离子体。提供了用于向样品电极6提供高频电力的高频电源10。每当处理规定数量的样品时，将虚拟样品进行等离子体掺杂，然后进行加热。控制处理样品的条件使得表面薄层电阻的测量值等于规定值，从而可以提高杂质浓度的可控性。

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